公开(公告)号：US09136097B2

公开(公告)日：2015-09-15

申请号：US12266800

申请日：2008-11-07

Applicant: Chishio Koshimizu ,  Kazuki Denpoh ,  Hiromasa Mochiki

Inventor： Chishio Koshimizu ,  Kazuki Denpoh ,  Hiromasa Mochiki

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32449

Abstract: A shower plate of a processing gas supply unit disposed in a processing chamber of a substrate processing apparatus to supply a processing gas into a processing space in the processing chamber. The shower plate is interposed between a processing gas introduction space formed in the processing gas supply unit for introduction of the processing gas and the processing space. The shower plate includes processing gas supply passageways which allow the processing gas introduction space to communicate with the processing space. The processing gas supply passageways include gas holes formed toward the processing gas introduction space and gas grooves formed toward the processing space, the gas holes and gas grooves communicating with each other. A total flow path cross sectional area of all the gas grooves is larger than a total flow path cross sectional area of all the gas holes.

Abstract translation: 处理气体供给单元的喷淋板，设置在基板处理装置的处理室中，以将处理气体供给到处理室中的处理空间。 喷淋板介于形成在处理气体供给单元中的处理气体导入空间，用于引入处理气体和处理空间。 淋浴板包括处理气体供给通道，其允许处理气体引入空间与处理空间通信。 处理气体供给通路包括朝向处理气体导入空间形成的气孔和朝向处理空间形成的气体槽，气体孔和气体槽相互连通。 所有气体槽的总流路横截面面积大于所有气孔的总流路横截面面积。

公开(公告)号：US20110094995A1

公开(公告)日：2011-04-28

申请号：US12913135

申请日：2010-10-27

Applicant: Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku ,  Hachishiro Iizuka

Inventor： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku ,  Hachishiro Iizuka

IPC: C23F1/08 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23F1/00

CPC classification number: H01J37/321 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138

Abstract: A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.

Abstract translation: 一种等离子体处理装置，包括：包括电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 基板支撑单元，设置在所述室中，用于在其上安装目标基板; 处理气体供应单元，用于将处理气体供应到所述室; 以及RF电源单元，用于向RF天线提供RF功率，以通过腔室中的感应耦合产生处理气体的等离子体。 该装置还包括校正线圈，其设置在室外的位置处，其中校正线圈将通过电磁感应与RF天线耦合，用于控制腔室中的等离子体密度分布; 以及天线线圈距离控制单元，用于在支撑基本上与RF天线并联的校正线圈的同时控制RF天线和校正线圈之间的距离。

公开(公告)号：US20110094682A1

公开(公告)日：2011-04-28

申请号：US12913209

申请日：2010-10-27

Applicant: Yohei Yamazawa ,  Kazuki Denpoh ,  Jun Yamawaku

Inventor： Yohei Yamazawa ,  Kazuki Denpoh ,  Jun Yamawaku

IPC: C23C16/505 ,  C23C16/455 ,  C23C16/458 ,  C23F1/08

CPC classification number: H01J37/3211 ,  C23C16/505 ,  H01J37/321 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion.

Abstract translation: 等离子体处理装置包括处理室，其一部分由电介质窗形成; 设置在处理室中的基板支撑单元，用于安装目标基板; 处理气体供应单元，用于向处理室供应处理气体以对目标基板执行等离子体处理; 设置在电介质窗外部的RF天线，用于通过处理室中的感应耦合从处理气体产生等离子体; 以及用于向RF天线提供RF功率的RF电源单元。 RF天线包括具有线圈绕行方向的切口部的单绕线圈或多绕线圈导体， 并且来自RF电源单元的一对RF电力线分别经由切口部分彼此相对地连接到线圈导体的一对线圈端部。

公开(公告)号：US20100321029A1

公开(公告)日：2010-12-23

申请号：US12867120

申请日：2009-01-30

Applicant: Toru Ito ,  Masato Kawakami ,  Sumie Nagaseki ,  Kazuki Denpoh

Inventor： Toru Ito ,  Masato Kawakami ,  Sumie Nagaseki ,  Kazuki Denpoh

IPC: G01N27/62

CPC classification number: H01J37/3244 ,  H01J37/32449 ,  H01J37/32935

Abstract: Provided is a technique capable of ascertaining the process condition of the boundary between electrically positive and negative plasma regions. In a vacuum chamber, one of the parameters of process conditions is stepwisely changed to generate a plasma under at least three process conditions. The parameters include a flow rate ratio between an electrically negative gas and an electrically positive gas, a pressure in the vacuum chamber and the magnitude of an energy supplied to the gases. Next, a voltage is applied to a Langmuir probe positioned in that plasma, and a current-voltage curve indicating the relationship between the applied voltage and the electric current to flow through the probe is acquired for each of the process conditions. On the basis of the current-voltage curve group acquired, the process conditions are determined for the boundary between the electrically positive and negative plasma regions.

Abstract translation: 提供了一种能够确定电正极和负电等离子体区域之间的边界的工艺条件的技术。 在真空室中，逐步改变工艺条件的参数之一，以在至少三个工艺条件下产生等离子体。 参数包括电负气体和电正气体之间的流量比，真空室中的压力和供应给气体的能量的大小。 接下来，对位于该等离子体中的Langmuir探针施加电压，并且针对每个处理条件获取指示施加的电压和流过探针的电流之间的关系的电流 - 电压曲线。 基于所获得的电流 - 电压曲线组，确定电气正电压和负电压区域之间的边界的工艺条件。

公开(公告)号：US20100012274A1

公开(公告)日：2010-01-21

申请号：US12504043

申请日：2009-07-16

Applicant: Masaaki Miyagawa ,  Katsuhiko Ono ,  Chishio Koshimizu ,  Kazuki Denpoh ,  Tatsuo Matsudo ,  Yasuhiro Hamada

Inventor： Masaaki Miyagawa ,  Katsuhiko Ono ,  Chishio Koshimizu ,  Kazuki Denpoh ,  Tatsuo Matsudo ,  Yasuhiro Hamada

IPC: C23F1/08

CPC classification number: H01J37/32642 ,  H01J37/32623 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/68735

Abstract: A focus ring is placed on a substrate mounting table for mounting a target substrate thereon to surround the target substrate. The focus ring converges plasma on the target substrate when the target substrate is subjected to plasma processing. The focus ring is configured to create a temperature difference in its radial direction and over its full circumference during the plasma-processing of the target substrate. The focus ring also includes a radial outer region as a higher temperature region and a radial inner region as a lower temperature region. A groove is formed between the radial outer region and the radial inner region to extend over the full circumference of the focus ring.

Abstract translation: 将聚焦环放置在基板安装台上，用于在其上安装目标基板以围绕目标基板。 当目标衬底进行等离子体处理时，聚焦环会将等离子体收敛在目标衬底上。 聚焦环被配置成在靶基质的等离子体处理期间在其径向方向和其整个圆周上产生温度差。 聚焦环还包括作为较高温度区域的径向外部区域和作为较低温度区域的径向内部区域。 在径向外部区域和径向内部区域之间形成凹槽以在聚焦环的整个圆周上延伸。

公开(公告)号：US20070187363A1

公开(公告)日：2007-08-16

申请号：US11673948

申请日：2007-02-12

Applicant: Hiromi OKA ,  Akitaka Shimizu ,  Shosuke Endoh ,  Kazuki Denpoh

Inventor： Hiromi OKA ,  Akitaka Shimizu ,  Shosuke Endoh ,  Kazuki Denpoh

IPC: G01L21/30 ,  H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC classification number: H01J37/32449 ,  H01J37/3244

Abstract: A substrate processing apparatus that enables a state of plasma over a substrate to be maintained in a desired state easily. A plasma processing apparatus 10 that has therein a camber 11, a stage 12, and a processing gas introducing nozzle 38 carries out etching on a wafer W. The chamber 11 houses the wafer W. The stage 12 is disposed in the chamber 11 and the wafer W is mounted thereon. The processing gas introducing nozzle 38 is a projecting body that projects out into the chamber 11, and has therein a plurality of processing gas introducing holes 56 that open out in different directions to one another.

Abstract translation: 使基板上的等离子体状态能够容易地维持在期望状态的基板处理装置。 其中具有外倾角11，台12和处理气体引入喷嘴38的等离子体处理装置10对晶片W进行蚀刻。腔室11容纳晶片W.台12设置在腔室11中， 晶片W安装在其上。 处理气体引入喷嘴38是突出到室11中的突出体，并且在其中具有在彼此不同的方向上开放的多个处理气体导入孔56。

公开(公告)号：US20060214593A1

公开(公告)日：2006-09-28

申请号：US11387813

申请日：2006-03-24

Applicant: Kazuki Denpoh

Inventor： Kazuki Denpoh

IPC: H01J7/24

CPC classification number: H05H1/0081 ,  H01J37/32935

Abstract: An electron temperature measurement method that enables an electron temperature as a plasma parameter to be measured precisely. A plasma is produced in a chamber 11 such that a wafer W is subjected to reactive ion etching therein. An ion energy distribution in the chamber 11 is measured. An ion energy distribution in the chamber 11 is simulated based on a set electron temperature. The measured ion energy distribution and the simulated ion energy distribution are compared. The electron temperature of the plasma is estimated based on results of the comparison mentioned above.

Abstract translation: 能够精确测量电子温度作为等离子体参数的电子温度测定方法。 在室11中产生等离子体，使得晶片W在其中进行反应离子蚀刻。 测量室11中的离子能量分布。 基于设定的电子温度来模拟室11中的离子能量分布。 比较测量的离子能量分布和模拟离子能量分布。 基于上述比较的结果估计等离子体的电子温度。

公开(公告)号：US20050274321A1

公开(公告)日：2005-12-15

申请号：US11147434

申请日：2005-06-08

Applicant: Tomoaki Ukei ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Kazuki Denpoh

Inventor： Tomoaki Ukei ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Kazuki Denpoh

IPC: C23C16/00 ,  C23C16/458 ,  C23C16/52 ,  H01L21/00

CPC classification number: C23C16/52 ,  C23C16/4585 ,  C23C16/463 ,  H01L21/67248

Abstract: A plasma processing apparatus for converting a processing gas into a plasma by a high frequency power in a processing chamber and performing a plasma processing on a substrate mounted on a mounting table includes a ring portion disposed to surround the substrate on the mounting table, and a temperature control unit for establishing a temperature difference between the ring portion and the substrate, such that the ring portion is at least 50° C. higher than the substrate. Further, the processing gas generates chlorine radicals, and the temperature control unit is at least one of a heating unit for heating the ring portion and a cooling unit for cooling the mounting table.

Abstract translation: 一种等离子体处理装置，用于通过处理室中的高频功率将处理气体转换成等离子体，并且对安装在安装台上的基板进行等离子体处理包括设置成围绕安装台上的基板的环形部分，以及 温度控制单元，用于建立环部和基板之间的温度差，使得环部比基板高至少50℃。 此外，处理气体产生氯自由基，温度控制单元是用于加热环形部分的加热单元和用于冷却安装台的冷却单元中的至少一个。

公开(公告)号：US06828243B2

公开(公告)日：2004-12-07

申请号：US10294838

申请日：2002-11-15

Applicant: Kazuki Denpoh

Inventor： Kazuki Denpoh

IPC: H01L21302

CPC classification number: H01L21/67069 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32642

Abstract: A compensation ring 31 disposed to surround a periphery of a wafer W on a susceptor 30 is concentrically divided into an inside first compensation ring member 32 and an outside second compensation ring member 33. A width of a first compensation ring member 32 is made such thin as one to three times mean free path of treatment gas molecules, thereby suppressing heat transfer between a susceptor 30 and a second compensation ring member 33. A base of a second compensation ring member, through a layer of conductive silicone rubber 34, is made to come into an intimate contact with an upper surface of a susceptor 30, thus helping to cool.

Abstract translation: 设置在围绕基座30上的晶片W周围的补偿环31同心地分成内侧第一补偿环构件32和外侧第二补偿环构件33.第一补偿环构件32的宽度被制成如此薄 作为处理气体分子的平均自由程的一到三次，从而抑制基座30和第二补偿环构件33之间的热传递。通过导电硅橡胶层34的第二补偿环构件的基底被制成 与基座30的上表面紧密接触，从而有助于冷却。

公开(公告)号：US5853803A

公开(公告)日：1998-12-29

申请号：US964608

申请日：1997-11-05

Applicant: Kiyohisa Tateyama ,  Kimio Motoda ,  Tatsuya Iwasaki ,  Takenobu Matsuo ,  Kazuki Denpoh ,  Eiji Yamaguchi

Inventor： Kiyohisa Tateyama ,  Kimio Motoda ,  Tatsuya Iwasaki ,  Takenobu Matsuo ,  Kazuki Denpoh ,  Eiji Yamaguchi

IPC: B05C11/08 ,  G03F7/16 ,  H01L21/00 ,  H01L21/687 ,  B05D3/12

CPC classification number: H01L21/67173 ,  B05C11/08 ,  G03F7/162 ,  G03F7/168 ,  H01L21/6715 ,  H01L21/68707 ,  Y10S134/902

Abstract: A method of resist-processing a rectangular substrate including a resist coating step of supplying resist solution to the substrate, while rotating it, to form resist film at least on one surface of it and a resist removing step of jetting removing liquid, which can solve resist, to both surfaces of it at its side peripheral portions to remove the resist film from them.

Abstract translation: 一种抗蚀剂处理方法，包括抗蚀剂涂布步骤，该方法包括在将抗蚀剂溶液旋转的同时向其提供抗蚀剂溶液，以至少在其一个表面上形成抗蚀剂膜，以及除去液体的抗蚀剂去除步骤，其可以解决 在其侧边缘处抵抗其两个表面以从它们去除抗蚀剂膜。