Semiconductor device and method of manufacturing the same
    21.
    发明申请
    Semiconductor device and method of manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号:US20060284259A1

    公开(公告)日:2006-12-21

    申请号:US11449689

    申请日:2006-06-09

    CPC classification number: H01L27/0207 H01L27/10817 H01L27/10885

    Abstract: In a semiconductor device having asymmetric bit lines and a method of manufacturing the same, a plurality of active regions are electrically isolated from one another by an isolation layer. Each active region extends in a first direction and has a central portion between end portions. The device includes a plurality of transistors, each including first impurity doped regions formed at the central portions and second impurity doped regions formed at both end portions to extend in a second direction different from the first direction. A plurality of asymmetric bit lines are electrically connected to the first impurity doped regions, each extending in a third direction substantially perpendicular to the second direction. Each asymmetric bit line has a first side surface extending in a straight line along the third direction, and a second side surface including a plurality of protrusions.

    Abstract translation: 在具有不对称位线的半导体器件及其制造方法中,多个有源区域通过隔离层彼此电隔离。 每个有源区域在第一方向上延伸并且在端部之间具有中心部分。 该器件包括多个晶体管,每个晶体管包括形成在中心部分的第一杂质掺杂区域和形成在两个端部处的第二杂质掺杂区域,以沿与第一方向不同的第二方向延伸。 多个非对称位线电连接到第一杂质掺杂区域,每个第一杂质掺杂区域在基本上垂直于第二方向的第三方向上延伸。 每个不对称位线具有沿着第三方向在直线上延伸的第一侧表面和包括多个突起的第二侧表面。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    25.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20140370672A1

    公开(公告)日:2014-12-18

    申请号:US14169608

    申请日:2014-01-31

    Abstract: In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.

    Abstract translation: 在制造半导体器件的方法中,第一栅电极和第二栅电极分别设置在衬底上,第一栅极电极和第二栅电极分别形成在衬底的第一区域和第二区域中。 导电缓冲层沿着第一栅电极和第二栅电极的侧壁以及第一栅电极和第二栅电极的上表面形成。 形成覆盖缓冲层上的基板的第一区域的第一掩模图案。 使用第一掩模图案作为离子注入工艺的掩模,在第二栅电极的侧面的衬底中形成第一杂质区。

    Optical element holder and projection exposure apparatus having the same
    28.
    发明申请
    Optical element holder and projection exposure apparatus having the same 有权
    光学元件支架和投影曝光装置

    公开(公告)号:US20060291077A1

    公开(公告)日:2006-12-28

    申请号:US11451580

    申请日:2006-06-13

    CPC classification number: G02B7/00 G03F7/701 G03F7/70825

    Abstract: In an optical member holder and a projection exposure apparatus having the same, a light beam radiated from a light source may be formed into light having a desired shape by selecting one of a plurality of optical elements. An optical element holder may include a support member to support the plurality of optical elements, a first driving section to move or rotate the support member to select one of the optical elements, and a second driving section to rotate the selected optical element to adjust an arrangement direction thereof. The light formed by the selected optical element may be directed through a reticle.

    Abstract translation: 在具有该光学构件保持器和投影曝光设备的光学构件保持器和投影曝光设备中,从光源辐射的光束可以通过选择多个光学元件之一形成具有所需形状的光。 光学元件保持器可以包括用于支撑多个光学元件的支撑构件,用于移动或旋转支撑构件以选择一个光学元件的第一驱动部分和第二驱动部分,以旋转所选择的光学元件以调整 排列方向。 由所选择的光学元件形成的光可以被引导通过掩模版。

    Photosensitive polymer and resist composition containing the same
    29.
    发明授权
    Photosensitive polymer and resist composition containing the same 失效
    含有它们的光敏聚合物和抗蚀剂组合物

    公开(公告)号:US06596459B1

    公开(公告)日:2003-07-22

    申请号:US09716269

    申请日:2000-11-21

    CPC classification number: G03F7/0395 G03F7/0397

    Abstract: There are provided a photosensitive polymer and a photoresist compositing containing the same. The photosensitive polymer is represented by the following formula: wherein R1 is an acid-labile tertiary alkyl ester group, R2 is hydrogen atom, methyl, ethyl, carboxyl, &ggr;-butyrolactone-2-yl ester, &ggr;-butyrolactone-3-yl ester, pantolactone-2-yl ester, mevalonic lactone ester, 3-tetrahydrofuranyl ester, 2,3-propylenecarbonate-1-yl ester, 3-methyl-&ggr;-butyrolactone-3-yl ester or C3 to C20 alicyclic hydrocarbon, a/(a+b+c) is 0.1˜0.7, b/(a+b+c) is 0.1˜0.8, c/(a+b+c) is 0.0˜0.8, and n is an integer in the range of 0 to 2.

    Abstract translation: 提供光敏聚合物和含有它的光致抗蚀剂复合物。 光敏聚合物由下式表示:其中R1是酸不稳定的叔烷基酯基,R2是氢原子,甲基,乙基,羧基,γ-丁内酯-2-基酯,γ-丁内酯-3-基酯 ,泛酸内酯-2-基酯,甲羟戊酸内酯,3-四氢呋喃基酯,2,3-亚丙基碳酸酯-1-基酯,3-甲基-γ-丁内酯-3-基酯或C 3至C 20脂环族烃,a /( a + b + c)为0.1〜0.7,b /(a + b + c)为0.1〜0.8,c /(a + b + c)为0.0〜0.8,n为0〜 2。

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