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    Photosensitive polymer and resist composition containing the same
    1.
    发明授权
    Photosensitive polymer and resist composition containing the same 失效
    含有它们的光敏聚合物和抗蚀剂组合物

    公开(公告)号：US06596459B1

    公开(公告)日：2003-07-22

    申请号：US09716269

    申请日：2000-11-21

    Applicant: Hyun-woo Kim ,  Ki-young Kwon ,  Si-hyeung Lee ,  Dong-won Jung ,  Sook Lee ,  Kwang-sub Yoon ,  Sang-jun Choi ,  Sang-gyun Woo

    Inventor： Hyun-woo Kim ,  Ki-young Kwon ,  Si-hyeung Lee ,  Dong-won Jung ,  Sook Lee ,  Kwang-sub Yoon ,  Sang-jun Choi ,  Sang-gyun Woo

    IPC: G03F7004

    CPC classification number: G03F7/0395 ,  G03F7/0397

    Abstract: There are provided a photosensitive polymer and a photoresist compositing containing the same. The photosensitive polymer is represented by the following formula: wherein R1 is an acid-labile tertiary alkyl ester group, R2 is hydrogen atom, methyl, ethyl, carboxyl, &ggr;-butyrolactone-2-yl ester, &ggr;-butyrolactone-3-yl ester, pantolactone-2-yl ester, mevalonic lactone ester, 3-tetrahydrofuranyl ester, 2,3-propylenecarbonate-1-yl ester, 3-methyl-&ggr;-butyrolactone-3-yl ester or C3 to C20 alicyclic hydrocarbon, a/(a+b+c) is 0.1˜0.7, b/(a+b+c) is 0.1˜0.8, c/(a+b+c) is 0.0˜0.8, and n is an integer in the range of 0 to 2.

    Abstract translation: 提供光敏聚合物和含有它的光致抗蚀剂复合物。 光敏聚合物由下式表示：其中R1是酸不稳定的叔烷基酯基，R2是氢原子，甲基，乙基，羧基，γ-丁内酯-2-基酯，γ-丁内酯-3-基酯 ，泛酸内酯-2-基酯，甲羟戊酸内酯，3-四氢呋喃基酯，2,3-亚丙基碳酸酯-1-基酯，3-甲基-γ-丁内酯-3-基酯或C 3至C 20脂环族烃，a /（ a + b + c）为0.1〜0.7，b /（a + b + c）为0.1〜0.8，c /（a + b + c）为0.0〜0.8，n为0〜 2。

    Method of forming patterns of semiconductor device
    9.
    发明授权
    Method of forming patterns of semiconductor device 有权
    形成半导体器件图案的方法

    公开(公告)号：US08263487B2

    公开(公告)日：2012-09-11

    申请号：US12655344

    申请日：2009-12-29

    Applicant: Dong-ki Yoon ,  Shi-yong Yi ,  Seong-woon Choi ,  Seok-hwan Oh ,  Kwang-sub Yoon ,  Myeong-cheol Kim ,  Young-ju Park

    Inventor： Dong-ki Yoon ,  Shi-yong Yi ,  Seong-woon Choi ,  Seok-hwan Oh ,  Kwang-sub Yoon ,  Myeong-cheol Kim ,  Young-ju Park

    IPC: H01L21/4763

    CPC classification number: H01L21/32139 ,  H01L21/0337 ,  H01L21/0338 ,  H01L27/115 ,  H01L27/11517

    Abstract: A method of forming fine patterns of a semiconductor device by using carbon (C)-containing films includes forming an etching target film on a substrate including first and second regions; forming a plurality of first C-containing film patterns on the etching target film in the first region; forming a buffer layer which covers top and side surfaces of the plurality of first C-containing film patterns; forming a second C-containing film; removing the second C-containing film in the second region; exposing the plurality of first C-containing film patterns by removing a portion of the buffer layer in the first and second regions; and etching the etching target film by using the plurality of first C-containing film patterns, and portions of the second C-containing film which remain in the first region, as an etching mask.

    Abstract translation: 通过使用含碳（C）的膜来形成半导体器件的精细图案的方法包括在包括第一和第二区域的衬底上形成蚀刻靶膜; 在所述第一区域中的所述蚀刻目标膜上形成多个第一含C膜的图案; 形成覆盖所述多个第一含C膜图案的顶表面和侧表面的缓冲层; 形成第二含C膜; 去除第二区域中的第二含C膜; 通过去除第一和第二区域中的缓冲层的一部分来暴露多个第一含C膜的图案; 并且通过使用多个第一含C膜膜图案和残留在第一区域中的第二含C膜的部分来蚀刻蚀刻目标膜作为蚀刻掩模。

    Photomask including focus metrology mark, substrate target including focus monitor pattern, metrology method for lithography process, and method of manufacturing integrated circuit device
    10.
    发明授权
    Photomask including focus metrology mark, substrate target including focus monitor pattern, metrology method for lithography process, and method of manufacturing integrated circuit device 有权
    包括焦点计量标记的光掩模，包括焦点监测图案的基板目标，光刻工艺的计量方法和制造集成电路装置的方法

    公开(公告)号：US09557655B2

    公开(公告)日：2017-01-31

    申请号：US14700864

    申请日：2015-04-30

    Applicant: Ji-myung Kim ,  Yong-chul Kim ,  Young-sik Park ,  Kwang-sub Yoon

    Inventor： Ji-myung Kim ,  Yong-chul Kim ,  Young-sik Park ,  Kwang-sub Yoon

    IPC: H01L21/66 ,  G03F7/20 ,  H01L21/027 ,  G03F1/38

    CPC classification number: G03F7/70641 ,  G03F1/38 ,  G03F1/44 ,  H01L21/027 ,  H01L21/0274

    Abstract: A photomask includes a focus metrology mark region that includes a plurality of focus monitor patterns. To measure a focal variation of a feature pattern formed on a substrate, a substrate target for lithography metrology including a focus metrology mark formed on the same level as the feature pattern is used. A lithography metrology apparatus includes a projection device including a polarizer; a detection device detecting the powers of ±n-order diffracted light beams from among output beams diffracted by the focus metrology mark of a to-be-measured substrate; and a determination device which determines, from a power deviation between the ±n-order diffracted light beams, defocus experienced by the feature pattern.

    Abstract translation: 光掩模包括聚焦计量标记区域，其包括多个聚焦监视器图案。 为了测量形成在基板上的特征图案的焦点变化，使用包括与特征图案在同一水平上形成的焦点计量标记的光刻测量用基板目标。 光刻计量装置包括：投影装置，包括偏振器; 检测装置，通过待测基板的焦点计量标记，检测从衍射光的衍射光束中的±n级衍射光束的功率; 以及确定装置，其从±n级衍射光束之间的功率偏差确定由特征图案经历的散焦。

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