公开(公告)号：US20120264246A1

公开(公告)日：2012-10-18

申请号：US13086663

申请日：2011-04-14

Applicant: Lung-Han Peng ,  Jeng-Wei Yu ,  Po-Chun Yeh

Inventor： Lung-Han Peng ,  Jeng-Wei Yu ,  Po-Chun Yeh

IPC: H01L31/18 ,  H01L21/205

CPC classification number: H01L33/32 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/06

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract translation: 本公开的各种实施方案涉及对衬底上的氮化物层再生长的选择性光增强湿氧化。 一方面，一种方法可以包括：在衬底的第一表面上形成具有第一低带隙能的第一III族氮化物层; 在所述第一III族氮化物层上形成具有第一高带隙能的第二III族氮化物层; 通过光增强湿氧化将第一III-氮化物层的部分转变成多个III-氧化物条; 在所述III氧化物条之间的所述第二III族氮化物层上形成具有第二低带隙能量的多个III族氮化物纳米线; 并且通过选择性光增强氧化将至少一些III族氮化物纳米线选择性地转化为III族氧化物纳米线。

公开(公告)号：US20110057185A1

公开(公告)日：2011-03-10

申请号：US12609337

申请日：2009-10-30

Applicant: Lung-Han PENG ,  Sung Li WANG ,  Hong-Wei KUO

Inventor： Lung-Han PENG ,  Sung Li WANG ,  Hong-Wei KUO

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/4908 ,  H01L29/78696

Abstract: A thin film transistor includes a channel layer. The channel layer has a plurality of stacked oxide layers. The oxide layers are made of at least two different oxide materials. The channel layer modulates a threshold voltage of the thin film transistor. An insulating interface layer is formed between the channel layer and an insulating dielectric layer, thereby transforming the thin film transistor from a depletion type transistor to an enhanced type transistor.

Abstract translation: 薄膜晶体管包括沟道层。 沟道层具有多个堆叠的氧化物层。 氧化物层由至少两种不同的氧化物材料制成。 沟道层调制薄膜晶体管的阈值电压。 在沟道层和绝缘介电层之间形成绝缘界面层，从而将薄膜晶体管从耗尽型晶体管转换为增强型晶体管。

公开(公告)号：US20090185412A1

公开(公告)日：2009-07-23

申请号：US12182644

申请日：2008-07-30

Applicant: Lung-Han Peng ,  Sung-Li Wang ,  Meng-Kuei Hsieh ,  Chien-Yu Chen

Inventor： Lung-Han Peng ,  Sung-Li Wang ,  Meng-Kuei Hsieh ,  Chien-Yu Chen

IPC: G11C11/00 ,  H01L45/00 ,  C01B21/20 ,  C01G15/00 ,  C01G17/00

CPC classification number: C23C14/0676 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/145 ,  H01L45/1625 ,  Y10S438/90

Abstract: A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.

Abstract translation: 提供了相变材料和使用该相变材料的存储单元。 相变材料为单晶状态，包括金属氧化物或氮氧化物的化合物，其中金属为选自铟，镓和锗的至少一种。 存储单元包括基板; 至少形成在所述基板上的第一接触电极; 介电层，其设置在所述基板上，并且形成有用于要形成在其中的所述相变材料层的开口; 以及设置在电介质层上的至少第二接触电极。 由于相变材料处于单晶状态，在高电阻状态和低电阻状态之间存在很大的差异，所以使用相变材料的存储器单元可以通过脉冲电压快速获得相变特性，并避免任何不完全复位 具有低临界功率。

公开(公告)号：US20090026471A1

公开(公告)日：2009-01-29

申请号：US11829651

申请日：2007-07-27

Applicant: Han-Min Wu ,  Lung-Han Peng

Inventor： Han-Min Wu ,  Lung-Han Peng

IPC: H01L33/00 ,  G02F1/1335 ,  H01S5/00

CPC classification number: G02B5/0278 ,  G02B5/0221 ,  G02B5/0268 ,  G02F2001/133607 ,  H01L33/22 ,  H01L2933/0091 ,  H01S5/005 ,  H01S5/026 ,  H01S5/0267

Abstract: A light-scattering structure with micron-scale or submicron-scale protruding portions is provided to improve the light extraction efficiency of light emitting devices. The protruding portions function as scattering sites and can be assembled closely. A method of forming a light-scattering structure is also provided, wherein all the conventional substrate materials can be used for the substrate of the light-scattering structure, and scattering sites of submicron-scale, micron-scale or larger size can be fabricated.

Abstract translation: 提供具有微米级或亚微米级突出部分的光散射结构，以提高发光器件的光提取效率。 突出部分作为散射部位起作用，可以紧密组合。 还提供了一种形成光散射结构的方法，其中所有常规基板材料都可用于光散射结构的基板，并且可以制造亚微米级，微米级或更大尺寸的散射位置。

公开(公告)号：US5895223A

公开(公告)日：1999-04-20

申请号：US988301

申请日：1997-12-10

Applicant: Lung-Han Peng ,  Chih-Wei Chuang ,  Jin-Kuo Ho ,  Chin-Yuan Chen

Inventor： Lung-Han Peng ,  Chih-Wei Chuang ,  Jin-Kuo Ho ,  Chin-Yuan Chen

IPC: H01L21/311 ,  H01L21/318 ,  H01L21/302

CPC classification number: H01L21/31111 ,  H01L21/3185

Abstract: A method for etching nitride is provided, by which the etching rate and the roughness of the etching surface can be powerfully controlled, and by which the etching depth can be in-situ monitored. The etching method comprises the steps of: (i) coating a first electrode on a nitride chip; (ii) mounting the nitride chip on a holding device; (iii)dipping the holding device, the nitride chip and the first electrode in electrolysis liquid; (iv) irradiating the nitride chip with a UV light having a wavelength shorter than 254 nm; and (v) connecting the first electrode to a second electrode dipped in the electrolysis liquid by a galvanometer to in-situ monitor the etching current, so as to in-situ control the etching depth.

Abstract translation: 提供了一种蚀刻氮化物的方法，通过该方法可以有效地控制蚀刻表面的蚀刻速率和粗糙度，并且可以原位监测蚀刻深度。 蚀刻方法包括以下步骤：（i）在氮化物芯片上涂覆第一电极; （ii）将氮化物芯片安装在保持装置上; （iii）将保持装置，氮化物片和第一电极浸入电解液中; （iv）用波长短于254nm的UV光照射氮化物芯片; 和（v）通过电流计将第一电极连接到浸入电解液中的第二电极，以便原位监测蚀刻电流，从而原位控制蚀刻深度。