公开(公告)号：US20120194900A1

公开(公告)日：2012-08-02

申请号：US13218462

申请日：2011-08-26

Applicant: Jiun-Wei LIOU ,  Jun-Ying LI ,  Chih-Ming LAI ,  Chern-Lin CHEN ,  Way-Seen WANG ,  Lung-Han PENG

Inventor： Jiun-Wei LIOU ,  Jun-Ying LI ,  Chih-Ming LAI ,  Chern-Lin CHEN ,  Way-Seen WANG ,  Lung-Han PENG

IPC: G02F1/37

CPC classification number: G02F1/37 ,  G02F1/3558 ,  G02F1/3775

Abstract: A second-harmonic generation nonlinear frequency converter includes a nonlinear optical crystal. The nonlinear optical crystal includes a plurality of sections. The sections connect to each other in sequence, and each section has a phase different from others. Each of the phases includes a positive domain and a negative domain. Each of the sections includes a plurality of quasi-phase-matching structures. The quasi-phase-matching structures connect to each other in sequence and have the same phase in one section.

Abstract translation: 二次谐波发生非线性频率转换器包括非线性光学晶体。 非线性光学晶体包括多个部分。 这些部分依次相互连接，每个部分的阶段与其他部分不同。 每个相包括正域和负域。 每个部分包括多个准相位匹配结构。 准相位匹配结构依次相互连接，在一个部分中具有相同的相位。

公开(公告)号：US20110116519A1

公开(公告)日：2011-05-19

申请号：US12720162

申请日：2010-03-09

Applicant: Lung-Han Peng ,  Chih-Ming Lai ,  I-Ning Hu ,  Ying-Yao Lai ,  Chu-Hsuan Haung

Inventor： Lung-Han Peng ,  Chih-Ming Lai ,  I-Ning Hu ,  Ying-Yao Lai ,  Chu-Hsuan Haung

IPC: H01S3/10

CPC classification number: H01S3/1083 ,  G02F1/3532 ,  G02F1/39 ,  G02F2001/3546 ,  G02F2001/3548

Abstract: Provided are an apparatus and a method for converting laser energy, characterized by employing an optical parametric oscillator for converting light of a green laser wavelength into light of a blue or red laser wavelength via a phase matching structure, by means of a non-linear optical crystal having a one-dimensional quasi-phase matching structure with a single grating period under appropriately-controlled temperature conditions. The non-linear optical crystal with the single grating period facilitates optical parametric oscillation and second harmonic generation to thereby enable green-to-blue wavelength conversion with a slope efficiency greater than 20%. Under 400 mW green light pump laser action, a periodically poled LiTaO3 crystal with a crystal length of 15 mm and without a resistant reflective plating film on its end face is capable of outputting a blue light laser beam of 56 mW.

Abstract translation: 提供了一种用于转换激光能量的装置和方法，其特征在于采用光学参量振荡器，通过相位匹配结构，通过非线性光学器件将绿色激光波长的光转换成蓝色或红色激光波长的光 晶体具有在适当控制的温度条件下具有单个光栅周期的一维准相位匹配结构。 具有单光栅周期的非线性光学晶体便于光参量振荡和二次谐波产生，从而使得斜率效率大于20％的绿 - 蓝波长转换成为可能。 在400mW绿光泵浦激光作用下，晶体长度为15mm的周期极化的LiTaO3晶体在其端面上没有耐反射镀膜，能够输出56mW的蓝光激光束。

公开(公告)号：US20060121700A1

公开(公告)日：2006-06-08

申请号：US11005193

申请日：2004-12-06

Applicant: Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

Inventor： Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

IPC: H01L21/84 ,  H01L21/20

CPC classification number: H01L21/02241 ,  H01L21/02258 ,  H01L21/02337 ,  H01L21/3143 ,  H01L21/31679 ,  H01L29/78681

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract translation: 在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓 并进行快速热退火处理。 光辅助电化学方法在约5.5和7.5之间的pH下使用包括缓冲CH 3 COOH的电解质浴。 快速热退火工艺在O 2 O 2环境中在约500℃至800℃的温度下进行。

公开(公告)号：US20060014368A1

公开(公告)日：2006-01-19

申请号：US10892180

申请日：2004-07-16

Applicant: Lung-Han Peng ,  Han-Ming Wu ,  Sung-Li Wang ,  Chia-Wei Chang ,  Chin-Yi Lin

Inventor： Lung-Han Peng ,  Han-Ming Wu ,  Sung-Li Wang ,  Chia-Wei Chang ,  Chin-Yi Lin

IPC: H01L21/28

CPC classification number: H01L33/42 ,  H01L33/32

Abstract: A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.

Abstract translation: 一种制造氮化镓基透明导电氧化膜欧姆电极的方法包括在GaN层上形成透明导电膜，通过离子在GaN层的表面上的透明导电膜上形成具有相反电特性的透明导电异质结 扩散工艺，并在后续制造操作中在布线工艺的透明导电异质结表面上铺设金属厚膜。 因此，通过离子扩散过程中的电子和空穴隧穿效应，可以改善异质结的费米能级以形成欧姆接触电极。

公开(公告)号：US06926770B2

公开(公告)日：2005-08-09

申请号：US10434233

申请日：2003-05-09

Applicant: Lung-Han Peng ,  Way-Seen Wang ,  Shu-Mei Tsan ,  Yi-Chun Shih ,  Yung-Chang Zhang ,  Chao-Ching Hsu

Inventor： Lung-Han Peng ,  Way-Seen Wang ,  Shu-Mei Tsan ,  Yi-Chun Shih ,  Yung-Chang Zhang ,  Chao-Ching Hsu

IPC: G02F1/37 ,  C30B33/00 ,  G02F1/355 ,  C30B33/06

CPC classification number: G02F1/3558 ,  C30B29/30 ,  C30B33/00

Abstract: The present invention relates to a method to control the nucleation and transverse motion of 180° inverted domains in ferroelectric nonlinear crystals. It includes a process composing of a high temperature oxidation of the first metal layer and a pulsed field poling of the second electrodes. The main object of present invention is to provide domain inversion of ferroelectric nonlinear crystals with field control the nucleation and transverse motion of inverted domains and two-dimension nonlinear photonic crystals for time-domain multiple-wave simultaneous lasers and space filter function. Another object of present invention is to provide space-charge effect for screened edge field beneath the metal electrode, The other object of present invention is to provide the constraint of inverted domain nucleation in the oxidized electrode for arbitrarily geometrical form of 2D ferroelectric lattice structure.

Abstract translation: 本发明涉及一种控制铁电非线性晶体中180°倒置畴的成核和横向运动的方法。 它包括构成第一金属层的高温氧化和第二电极的脉冲场极化的工艺。 本发明的主要目的是提供铁电非线性晶体的域反转，其中场控制反向域的成核和横向运动以及用于时域多波同时激光器和空间滤波器功能的二维非线性光子晶体。 本发明的另一个目的是为金属电极下方的筛选边缘场提供空间电荷效应。本发明的另一个目的是提供二氧化铁电晶格结构的任意几何形式的氧化电极中的反向晶核成核的约束。

公开(公告)号：US20150090999A1

公开(公告)日：2015-04-02

申请号：US14146097

申请日：2014-01-02

Applicant: Lung-Han Peng ,  Yao-Te Wang ,  Po-Chun Yeh ,  Po-Ting Lee

Inventor： Lung-Han Peng ,  Yao-Te Wang ,  Po-Chun Yeh ,  Po-Ting Lee

IPC: H01L33/08 ,  H01L33/32 ,  H01L33/34 ,  H01L33/28

CPC classification number: H01L33/08 ,  H01L33/26 ,  H01L33/32

Abstract: A white LED is provided. The white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first metal oxide layer. The active layer includes a second metal oxide layer. The second barrier layer includes a third metal oxide layer. The N-type layer is disposed over the tunneling structure. The N-type electrode and the P-type electrode are respectively contacted with the N-type layer and the P-type layer. An energy gap of the second metal oxide layer is lower than an energy gap of the first metal oxide layer and is lower than an energy gap of the third metal oxide layer.

Abstract translation: 提供白色LED。 白色LED包括P型层，隧道结构，N型层，N型电极和P型电极。 隧道结构设置在P型层上。 隧道结构包括第一阻挡层，有源层和第二阻挡层。 第一阻挡层包括第一金属氧化物层。 有源层包括第二金属氧化物层。 第二阻挡层包括第三金属氧化物层。 N型层设置在隧道结构之上。 N型电极和P型电极分别与N型层和P型层接触。 第二金属氧化物层的能隙低于第一金属氧化物层的能隙，并且低于第三金属氧化物层的能隙。

公开(公告)号：US08481353B2

公开(公告)日：2013-07-09

申请号：US13086787

申请日：2011-04-14

Applicant: Lung-Han Peng ,  Jeng-Wei Yu ,  Po-Chun Yeh

Inventor： Lung-Han Peng ,  Jeng-Wei Yu ,  Po-Chun Yeh

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L21/268 ,  H01L33/32

Abstract: Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

Abstract translation: 本公开的各种实施例涉及通过选择性光增强湿氧化从生长衬底分离氮化物膜。 在一个方面，一种方法可以通过选择性光增强湿氧化将与第一衬底结构结合的III族氮化物结构的一部分转变为III氧化物层。 该方法还可以将第一衬底结构与III族氮化物结构分开。

公开(公告)号：US20120264247A1

公开(公告)日：2012-10-18

申请号：US13086787

申请日：2011-04-14

Applicant: Lung-Han Peng ,  Jeng-Wei Yu ,  Po-Chun Yeh

Inventor： Lung-Han Peng ,  Jeng-Wei Yu ,  Po-Chun Yeh

IPC: H01L33/32 ,  H01L21/268

CPC classification number: H01L33/0079 ,  H01L21/268 ,  H01L33/32

Abstract: Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

Abstract translation: 本公开的各种实施方案涉及通过选择性光增强湿氧化从生长衬底分离氮化物膜。 在一个方面，一种方法可以通过选择性光增强湿氧化将与第一衬底结构结合的III族氮化物结构的一部分转变为III氧化物层。 该方法还可以将第一衬底结构与III族氮化物结构分开。

公开(公告)号：US07977254B2

公开(公告)日：2011-07-12

申请号：US12931361

申请日：2007-06-27

Applicant: Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

Inventor： Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

IPC: H01L21/31

CPC classification number: H01L21/02241 ,  H01L21/02258 ,  H01L21/02337 ,  H01L21/3143 ,  H01L21/31679 ,  H01L29/78681

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract translation: 在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓 并进行快速热退火处理。 光辅助电化学方法使用包含缓冲CH 3 COOH的电解质浴，pH在约5.5和7.5之间。 快速热退火过程在氧气环境中在约500℃至800℃之间的温度下进行。

公开(公告)号：US20110149399A1

公开(公告)日：2011-06-23

申请号：US12774650

申请日：2010-05-05

Applicant: Lung-Han Peng ,  Han-Min Wu

Inventor： Lung-Han Peng ,  Han-Min Wu

IPC: G02B1/11

CPC classification number: G02B1/118 ,  G02B3/0056

Abstract: The embodiment provides an antireflection structure and a method for fabricating the same. The antireflection structure includes a substrate having a plurality of protruding structures adjacent to one another, thereby allowing light to transmit through. And a dielectric structural layer covers a plurality of the protruding structures.

Abstract translation: 本实施例提供一种抗反射结构及其制造方法。 防反射结构包括具有彼此相邻的多个突出结构的基板，从而允许光透过。 并且介电结构层覆盖多个突出结构。