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    Nanowire device with (111) vertical sidewalls and method of fabrication
    22.
    发明授权
    Nanowire device with (111) vertical sidewalls and method of fabrication 失效
    具有（111）垂直侧壁的纳米线器件和制造方法

    公开(公告)号：US07692179B2

    公开(公告)日：2010-04-06

    申请号：US10888628

    申请日：2004-07-09

    Applicant: M. Saif Islam ,  Yong Chen ,  Shih-Yuan Wang ,  R. Stanley Williams

    Inventor： M. Saif Islam ,  Yong Chen ,  Shih-Yuan Wang ,  R. Stanley Williams

    IPC: H01L29/06

    CPC classification number: H01L27/1203 ,  B82Y10/00 ,  G11C2213/81 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/861

    Abstract: A nano-scale device and method of fabrication provide a nanowire having (111) vertical sidewalls. The nano-scale device includes a semiconductor-on-insulator substrate polished in a [110] direction, the nanowire, and an electrical contact at opposite ends of the nanowire. The method includes wet etching a semiconductor layer of the semiconductor-on-insulator substrate to form the nanowire extending between a pair of islands in the semiconductor layer. The method further includes depositing an electrically conductive material on the pair of islands to form the electrical contacts. A nano-pn diode includes the nanowire as a first nano-electrode, a pn-junction vertically stacked on the nanowire, and a second nano-electrode on a (110) horizontal planar end of the pn-junction. The nano-pn diode may be fabricated in an array of the diodes on the semiconductor-on-insulator substrate.

    Abstract translation: 纳米级器件和制造方法提供具有（111）垂直侧壁的纳米线。 纳米级器件包括在[110]方向上抛光的绝缘体上半导体衬底，纳米线和在纳米线的相对端的电接触。 该方法包括湿式蚀刻绝缘体上半导体衬底的半导体层，以形成在半导体层中的一对岛之间延伸的纳米线。 该方法还包括在一对岛上沉积导电材料以形成电触头。 纳米pn二极管包括纳米线作为第一纳米电极，垂直堆叠在纳米线上的pn结，以及在pn结的（110）水平平面端上的第二纳米电极。 可以在绝缘体上半导体衬底上的二极管的阵列中制造纳米pn二极管。

    Fabricating Arrays Of Metallic Nanostructures
    23.
    发明申请
    Fabricating Arrays Of Metallic Nanostructures 失效
    制造金属纳米结构阵列

    公开(公告)号：US20090294755A1

    公开(公告)日：2009-12-03

    申请号：US12509689

    申请日：2009-07-27

    Applicant: Philip J. Kuekes ,  M. Saif Islam ,  Shih-Yuan Wang ,  Alexandre M. Bratkovaski

    Inventor： Philip J. Kuekes ,  M. Saif Islam ,  Shih-Yuan Wang ,  Alexandre M. Bratkovaski

    IPC: H01L29/15 ,  B05C11/00

    CPC classification number: G02B6/107 ,  B82Y30/00 ,  Y10S977/712 ,  Y10S977/762 ,  Y10T29/41

    Abstract: A patterned array of metallic nanostructures and fabrication thereof is described. A device comprises a patterned array of metallic columns vertically extending from a substrate. Each metallic column is formed by metallically coating one of an array of non-metallic nanowires catalytically grown from the substrate upon a predetermined lateral pattern of seed points placed thereon according to a nanoimprinting process. An apparatus for fabricating a patterned array of metallic nanostructures is also described.

    Abstract translation: 描述了金属纳米结构的图案阵列及其制造。 一种器件包括从衬底垂直延伸的金属柱的图案化阵列。 根据纳米压印方法，通过在其上放置的种子点的预定横向图案上，从衬底催化生长的非金属纳米线阵列之一金属地涂覆每个金属柱。 还描述了用于制造金属纳米结构的图案化阵列的装置。

    Dynamically variable separation among nanoparticles for nano-enhanced Raman spectroscopy (NERS) molecular sensing
    24.
    发明授权
    Dynamically variable separation among nanoparticles for nano-enhanced Raman spectroscopy (NERS) molecular sensing 有权
    用于纳米增强拉曼光谱（NERS）分子感测的纳米颗粒之间的动态变化分离

    公开(公告)号：US07342656B2

    公开(公告)日：2008-03-11

    申请号：US11252134

    申请日：2005-10-17

    Applicant: M. Saif Islam ,  Shih-Yuan Wang ,  R. Stanley Williams ,  Philip J. Kuekes ,  Wei Wu ,  Zhiyong Li

    Inventor： M. Saif Islam ,  Shih-Yuan Wang ,  R. Stanley Williams ,  Philip J. Kuekes ,  Wei Wu ,  Zhiyong Li

    IPC: G01J3/44 ,  G01N21/65

    CPC classification number: G01N21/658

    Abstract: A NERS-active structure includes a deformable, active nanoparticle support structure for supporting a first nanoparticle and a second nanoparticle that is disposed proximate the first nanoparticle. The nanoparticles each comprise a NERS-active material. The deformable, active nanoparticle support structure is configured to vary the distance between the first nanoparticle and the second nanoparticle while performing NERS. Various active nanoparticle support structures are disclosed. A NERS system includes such a NERS-active structure, a radiation source for generating radiation scatterable by an analyte located proximate the NERS-active structure, and a radiation detector for detecting Raman scattered radiation scattered by the analyte. A method for performing NERS includes providing such a NERS-active structure, providing an analyte at a location proximate the NERS-active structure, irradiating the NERS-active structure and the analyte with radiation, varying the distance between the nanoparticles, and detecting Raman scattered radiation scattered by the analyte.

    Abstract translation: NERS活性结构包括用于支撑第一纳米颗粒的可变形的活性纳米颗粒支撑结构和邻近第一纳米颗粒设置的第二纳米颗粒。 纳米颗粒各自包含NERS-活性材料。 可变形的活性纳米颗粒支撑结构被配置为在执行NERS的同时改变第一纳米颗粒和第二纳米颗粒之间的距离。 公开了各种活性纳米颗粒载体结构。 NERS系统包括这样的NERS-活性结构，用于产生由位于NERS-活性结构附近的分析物可散射的辐射的辐射源，以及用于检测被分析物散射的拉曼散射辐射的辐射检测器。 执行NERS的方法包括提供这样的NERS活性结构，在靠近NERS-活性结构的位置提供分析物，用辐射照射NERS-活性结构和分析物，改变纳米颗粒之间的距离并检测拉曼散射 被分析物散射的辐射。

    Light-amplifying structures and methods for surface-enhanced Raman spectroscopy
    25.
    发明授权
    Light-amplifying structures and methods for surface-enhanced Raman spectroscopy 有权
    用于表面增强拉曼光谱的光放大结构和方法

    公开(公告)号：US07339666B2

    公开(公告)日：2008-03-04

    申请号：US10942079

    申请日：2004-09-14

    Applicant: Shih-Yuan Wang ,  Zhiyong Li ,  M. Saif Islam

    Inventor： Shih-Yuan Wang ,  Zhiyong Li ,  M. Saif Islam

    IPC: G01J3/44

    CPC classification number: G01N21/658

    Abstract: Structures for amplifying light include a resonant cavity in which an analyte may be positioned. The structures for amplifying light may be used to amplify the incident light employed in surface enhanced Raman spectroscopy (SERS). SERS systems employing the structures for amplifying light of the present invention and methods of performing SERS are also disclosed.

    Abstract translation: 用于放大光的结构包括其中可以定位分析物的谐振腔。 用于放大光的结构可以用于放大表面增强拉曼光谱（SERS）中使用的入射光。 还公开了采用本发明的光放大结构的SERS系统和执行SERS的方法。

    Metallic quantum dots fabricated by a superlattice structure
    26.
    发明授权
    Metallic quantum dots fabricated by a superlattice structure 有权

    公开(公告)号：US07309642B2

    公开(公告)日：2007-12-18

    申请号：US11271354

    申请日：2005-11-09

    Applicant: William M. Tong ,  M. Saif Islam

    Inventor： William M. Tong ,  M. Saif Islam

    IPC: H01L21/30 ,  H01L21/46

    CPC classification number: H01L49/006 ,  B82Y10/00 ,  G01N21/658 ,  Y10S977/888 ,  Y10S977/893

    Abstract: A method for forming quantum dots includes forming a superlattice structure that includes at least one nanostrip protruding from the superlattice structure, providing a quantum dot substrate, transferring the at least one nanostrip to the quantum dot substrate, and removing at least a portion of the at least one nanostrip from the substrate. The superlattice structure is formed by providing a superlattice substrate, forming alternating layers of first and second materials on the substrate to form a stack, cleaving the stack to expose the alternating layers, and etching the exposed alternating layers with an etchant that etches the second material at a greater rate than the first to form the at least one nanostrip.

    Nanowire interconnection and nano-scale device applications
    27.
    发明授权
    Nanowire interconnection and nano-scale device applications 失效
    纳米线互连和纳米级器件应用

    公开(公告)号：US07307271B2

    公开(公告)日：2007-12-11

    申请号：US10982051

    申请日：2004-11-05

    Applicant: M. Saif Islam ,  Philip J. Kuekes ,  Shih-Yuan Wang ,  Duncan R. Stewart ,  Shashank Sharma

    Inventor： M. Saif Islam ,  Philip J. Kuekes ,  Shih-Yuan Wang ,  Duncan R. Stewart ,  Shashank Sharma

    IPC: H01L29/06 ,  H01L31/036

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01S5/0261 ,  H01S5/041 ,  H01S5/183 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/3428 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/938

    Abstract: A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to another horizontal surface of another layer to connect the layers. The nano-colonnade structure includes a first layer having the (111) horizontal surface; a second layer having the other horizontal surface; an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that the horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The structure further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, such that the nanowire column connects the first layer to the second layer.

    Abstract translation: 纳米柱廊结构及其制造和互连方法利用从半导体层的（111）水平表面几乎垂直地生长到另一层的另一水平表面的纳米线柱，以连接这些层。 纳米柱廊结构包括具有（111）水平表面的第一层; 具有另一水平表面的第二层; 第一层和第二层之间的绝缘体支撑，其将第一层与第二层分离。 第二层的一部分突出于绝缘体支撑件上，使得伸出部分的水平表面与第一层的（111）水平表面间隔开并面对第一层的（111）水平表面。 该结构还包括从（111）水平表面几乎垂直延伸到相对的水平表面的纳米线列，使得纳米线列将第一层连接到第二层。

    In situ excitation for Surface Enhanced Raman Spectroscopy
    28.
    发明授权
    In situ excitation for Surface Enhanced Raman Spectroscopy 失效
    表面增强拉曼光谱的原位激发

    公开(公告)号：US07102747B2

    公开(公告)日：2006-09-05

    申请号：US10964523

    申请日：2004-10-13

    Applicant: Shih-Yuan Wang ,  Zhiyong Li ,  M. Saif Islam

    Inventor： Shih-Yuan Wang ,  Zhiyong Li ,  M. Saif Islam

    IPC: G01J3/44 ,  G01N21/65

    CPC classification number: G01N21/658

    Abstract: Devices, systems, and methods using Surface Enhanced Raman Spectroscopy (SERS) are disclosed. A device for generating Raman scattered radiation comprises a laser source and a SERS-active structure. The laser source may be configured for emanating radiation from an emanating surface or by forming a depression in the laser source, which creates a region of increased evanescent field from the laser source. SERS systems and methods include a device for generating Raman scattered radiation with a detector configured to receive the Raman scattered radiation.

    Abstract translation: 公开了使用表面增强拉曼光谱（SERS）的器件，系统和方法。 用于产生拉曼散射辐射的装置包括激光源和SERS-活性结构。 激光源可以被配置用于从发射表面发射辐射，或者通过在激光源中形成凹陷，其产生从激光源增加的渐逝场的区域。 SERS系统和方法包括用配置成接收拉曼散射辐射的检测器产生拉曼散射辐射的装置。

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