公开(公告)号：US20100192688A1

公开(公告)日：2010-08-05

申请号：US12670715

申请日：2008-07-30

Applicant: Aurelie Humbert ,  Youri Victorovitch Ponomarev ,  Matthias Merz ,  Romano Hoofman

Inventor： Aurelie Humbert ,  Youri Victorovitch Ponomarev ,  Matthias Merz ,  Romano Hoofman

IPC: G01N17/04

CPC classification number: G01N17/04

Abstract: A sensor senses a characteristic of an environment, e.g., humidity. The sensor has a substrate with strips of material that is sensitive to corrosion as a result of the characteristic. The strips are configured to respond differently to the characteristic. By means of repeatedly measuring the resistances of the strips, the environment can be monitored in terms of accumulated exposure to the characteristic. The strips are manufactured in a semiconductor technology so as to generate accurate sensors that behave predictably.

Abstract translation: 传感器感测环境的特性，例如湿度。 传感器具有由于特性而对腐蚀敏感的材料条带的基板。 条带被配置为对特性做出不同的响应。 通过重复测量条的电阻，可以根据特征的累积暴露来监测环境。 这些条以半导体技术制造，以便产生可预测地行为的精确传感器。

公开(公告)号：US20080214920A1

公开(公告)日：2008-09-04

申请号：US11995846

申请日：2006-07-11

Applicant: Matthias Merz ,  Youri Ponomarev ,  Remco Pijnenburg

Inventor： Matthias Merz ,  Youri Ponomarev ,  Remco Pijnenburg

IPC: A61B5/04

CPC classification number: A61B5/04001 ,  A61B5/6805 ,  A61N1/0529 ,  A61N1/0531 ,  A61N1/0534 ,  A61N1/0543 ,  A61N1/0551 ,  B82Y15/00

Abstract: An apparatus and method for improving electrical contact between an implanted device (10) for recording or stimulating neuronal activity and surrounding tissue (12) (e.g., brain tissue, nerve fibers, etc.). In an exemplary embodiment, a nanometer sized topographic structure (36, 136) (e.g., a nanometer scale pillar) is processed for electrical connection with a corresponding electrode (30, 32) of the implanted device (10). The nanometer scale topographic structure (36, 136) bridges a gap (26) between the implanted device (10) and surrounding tissue (12), thus improving neuron-electrode coupling therebetween. The present disclosure can also be extended to any application where capacitive coupling to single or multiple cells (20) can be used for sensing and/or stimulation thereof.

Abstract translation: 一种用于改善用于记录或刺激神经元活动的植入装置（10）与周围组织（12）（例如脑组织，神经纤维等）之间的电接触的装置和方法。 在示例性实施例中，处理纳米尺度的地形结构（例如纳米尺度柱）（例如纳米尺度的柱），以与植入装置（10）的对应电极（30,32）电连接。 纳米级地形结构（36,136）桥接植入装置（10）和周围组织（12）之间的间隙（26），从而改善其间的神经元 - 电极耦合。 本公开还可以扩展到任何应用，其中可将单个或多个单元（20）的电容耦合用于感测和/或刺激它们。

公开(公告)号：US20080200967A1

公开(公告)日：2008-08-21

申请号：US12066690

申请日：2006-09-13

Applicant: Youri Ponomarev ,  Matthias Merz ,  Remco Pijnenburg

Inventor： Youri Ponomarev ,  Matthias Merz ,  Remco Pijnenburg

IPC: A61N1/04

CPC classification number: A61N1/0551 ,  A61N1/40

Abstract: An apparatus and method for electrostimulation treatment of neurological diseases is disclosed herein. The apparatus and method include an array (22) of sub-micron (and sub-cell size) FET electrodes (24) that are capacitively coupled to nervous system elements (both neurons (50) and axons (66)) as a replacement for traditional metal shanks in both single- and multi-electrode(s) electrostimulation implantable devices. By using such an approach, significant improvements in selectivity, power consumption and biocompatibility can be achieved, as well as relying on mainstream IC manufacture techniques for the manufacture thereof, making it cost-effective. The present disclosure can also be extended to any application where capacitive coupling to single or multiple cells can be used for sensing and/or stimulation thereof.

Abstract translation: 本文公开了神经疾病的电刺激治疗的装置和方法。 该装置和方法包括电容耦合到神经系统元件（神经元（50）和轴突（66））的亚微米（和子电池尺寸）FET电极（24）的阵列（22） 单电极和多电极电刺激可植入装置中的传统金属柄。 通过使用这种方法，可以实现选择性，功率消耗和生物相容性的显着改善，以及依靠主流IC制造技术来制造它，使其具有成本效益。 本公开还可以扩展到任何可以将单个或多个单元的电容耦合用于感测和/或刺激的应用。

公开(公告)号：US09546884B2

公开(公告)日：2017-01-17

申请号：US12889832

申请日：2010-09-24

Applicant: Roel Daamen ,  Aurelie Humbert ,  Matthias Merz ,  Youri Victorovitch Ponomarev

Inventor： Roel Daamen ,  Aurelie Humbert ,  Matthias Merz ,  Youri Victorovitch Ponomarev

IPC: G06K19/06 ,  G01D5/14

CPC classification number: G01D5/14 ,  H01L2224/11

Abstract: A sensor comprising a silicon substrate having a first and a second surface, integrated circuitry provided on the first surface of the silicon substrate, and a sensor structure provided on the second surface of the silicon substrate. The sensor structure and the integrated circuitry are electrically coupled to each other.

Abstract translation: 一种传感器，包括具有第一和第二表面的硅衬底，设置在硅衬底的第一表面上的集成电路以及设置在硅衬底的第二表面上的传感器结构。 传感器结构和集成电路彼此电耦合。

公开(公告)号：US08988088B2

公开(公告)日：2015-03-24

申请号：US13510368

申请日：2010-11-29

Applicant: Aurelie Humbert ,  Matthias Merz ,  Roel Daamen ,  Youri Victorovitch Ponomarev

Inventor： Aurelie Humbert ,  Matthias Merz ,  Roel Daamen ,  Youri Victorovitch Ponomarev

IPC: G01N27/04

CPC classification number: G01N27/041 ,  G01N27/048

Abstract: Disclosed is a liquid immersion sensor comprising a substrate (10) carrying a conductive sensing element (20) and a corrosive agent (30) for corroding the conductive sensing element, said corrosive agent being immobilized in the vicinity of the conductive sensing element and being soluble in said liquid.

Abstract translation: 公开了一种液浸传感器，其包括承载导电感测元件（20）的基底（10）和用于腐蚀导电感测元件的腐蚀剂（30），所述腐蚀剂固定在导电感测元件附近并且是可溶的 在所述液体中。

公开(公告)号：US08801917B2

公开(公告)日：2014-08-12

申请号：US13061110

申请日：2009-08-24

Applicant: Matthias Merz ,  Youri Victorovitch Ponomarev ,  Gilberto Curatola

Inventor： Matthias Merz ,  Youri Victorovitch Ponomarev ,  Gilberto Curatola

IPC: G01N27/327

CPC classification number: G01N27/4148 ,  G01N27/4145

Abstract: The invention relates to a method of determining a charged particle concentration in an analyte (100), the method comprising steps of: i) determining at least two measurement points of a surface-potential versus interface-temperature curve (c1, c2, c3, c4), wherein the interface temperature is obtained from a temperature difference between a first interface between a first ion-sensitive dielectric (Fsd) and the analyte (100) and a second interface between a second ion-sensitive dielectric (Ssd) and the analyte (100), and wherein the surface-potential is obtained from a potential difference between a first electrode (Fe) and a second electrode (Se) onto which said first ion-sensitive dielectric (Fsd) and said second ion-sensitive dielectric (Ssd) are respectively provided, And ii) calculating the charged particle concentration from locations of the at least two measurement points of said curve (c1, c2, c3, c4). This method, which still is a potentiometric electrochemical measurement, exploits the temperature dependency of a surface-potential of an ion-sensitive dielectric in an analyte. The invention further provides an electrochemical sensor for determining a charged particle concentration in an analyte. The invention also provides various sensors which can be used to determine the charged particle concentration, i.e. EGFET's and EIS capacitors.

Abstract translation: 本发明涉及一种测定分析物（100）中带电粒子浓度的方法，所述方法包括以下步骤：i）确定表面电位对界面温度曲线（c1，c2，c3，c3）的至少两个测量点， c4），其中所述界面温度是由第一离子敏感电介质（Fsd）和分析物（100）之间的第一界面与第二离子敏感电介质（Ssd）与分析物之间的第二界面 （100），并且其中所述表面电位由所述第一离子敏感电介质（Fsd）和所述第二离子敏感电介质（Ssd）上的第一电极（Fe）和第二电极（Se）之间的电位差获得， ），和ii）从所述曲线（c1，c2，c3，c4）的至少两个测量点的位置计算带电粒子浓度。 这种仍然是电位电化学测量的方法利用分析物中离子敏感电介质的表面电位的温度依赖性。 本发明还提供了一种用于测定分析物中带电粒子浓度的电化学传感器。 本发明还提供可用于确定带电粒子浓度的各种传感器，即EGFET和EIS电容器。

公开(公告)号：US08669124B2

公开(公告)日：2014-03-11

申请号：US13059410

申请日：2009-08-12

Applicant: Matthias Merz

Inventor： Matthias Merz

IPC: H01L21/66 ,  H01L29/66

CPC classification number: G01N33/48721 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A detector device and method of its fabrication are disclosed. Illustratively, an additional via is present through an insulator layer over a gate channel region which is on top of the channel region. The additional via is filled with conductor material. The conductor material is removed to form a chamber leading to one side of the gate channel region. Furthermore, a nanopore is etched from the chamber through the channel region.

Abstract translation: 公开了一种检测器件及其制造方法。 说明性地，在通道区域顶部的栅极沟道区域上通过绝缘体层存在另外的通孔。 额外的通孔填充有导体材料。 去除导体材料以形成通向栅极沟道区一侧的室。 此外，通过沟道区从腔室蚀刻纳米孔。

公开(公告)号：US20130032902A1

公开(公告)日：2013-02-07

申请号：US13556676

申请日：2012-07-24

Applicant: Matthias Merz

Inventor： Matthias Merz

IPC: H01L27/14 ,  H01L21/02

CPC classification number: G01N27/128 ,  G01N25/18 ,  G01N27/121 ,  G01N27/125 ,  G01N27/22 ,  G01N33/004 ,  G01N33/18 ,  G01N33/1826 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/1461 ,  H01L2924/00

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24, 26, 28) covering the metallization stack; a gas sensor including a sensing material portion (32, 74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.

Abstract translation: 公开了一种集成电路，其包括承载多个电路元件的基板（10） 互连所述电路元件的金属化堆叠（12,14,16），所述金属化堆叠包括图案化的上金属化层，包括第一金属部分（20）和第二金属部分（21）; 覆盖金属化堆叠的钝化堆叠（24,26,28）; 气体传感器，其包括在所述钝化层上的感测材料部分（32,74）; 延伸穿过所述钝化层的第一导电部分（38），其将所述感测材料部分的第一区域连接到所述第一金属部分; 以及延伸穿过所述钝化层的第二导电部分（40），其将所述感测材料部分的第二区域连接到所述第二金属部分。 还公开了制造这种IC的方法。

公开(公告)号：US20110175595A1

公开(公告)日：2011-07-21

申请号：US13010732

申请日：2011-01-20

Applicant: Axel NACKAERTS ,  Matthias MERZ

Inventor： Axel NACKAERTS ,  Matthias MERZ

IPC: G01R1/00 ,  H01L29/772

CPC classification number: G01N27/414 ,  G01N27/4148

Abstract: The present invention relates to a sensor comprising a substrate (10) carrying a field effect transistor (30) having a gate electrode (32), the sensor further comprising a measurement electrode (36) spatially separated from the gate electrode; and a reference electrode (40), said measurement electrode being in configurable conductive contact with said gate electrode, the sensor further comprising a charge storage element (60) comprising a first electrode connected to a node (38) between the measurement electrode and the gate electrode; and a second electrode configurably connected to a known potential source (80). The present invention further relates to a method of performing a measurement with such a sensor.

Abstract translation: 本发明涉及一种传感器，包括：承载具有栅电极（32）的场效应晶体管（30）的基板（10），该传感器还包括与栅电极空间分离的测量电极（36） 和参考电极（40），所述测量电极与所述栅电极配置为导电接触，所述传感器还包括电荷存储元件（60），所述电荷存储元件包括连接到所述测量电极和所述栅极之间的节点（38）的第一电极 电极; 以及可配置地连接到已知电位源（80）的第二电极。 本发明还涉及使用这种传感器执行测量的方法。

公开(公告)号：US20110133255A1

公开(公告)日：2011-06-09

申请号：US13059410

申请日：2009-08-12

Applicant: Matthias Merz

Inventor： Matthias Merz

IPC: H01L29/78 ,  H01L21/336 ,  B82Y15/00

CPC classification number: G01N33/48721 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A detector device: a source region (S), a drain region (D) and a gate contact (100) on a substrate (104), with a channel region between the source and drain regions (S, D), an insulator layer over the substrate, comprising vias (140, 142, 144) filled with conductor material, wherein the vias (140, 142, 144) are provided over the source, drain regions and a gate contact, an additional via (152) through the insulator layer, defining a first chamber leading to a first side of the channel region, a nanopore etched from this first chamber through the channel region, and connecting the first chamber to a second chamber, a drive means (60) for providing a voltage bias between the two chambers, a drive means for providing a voltage between the source and drain regions and gate, a current sensor (64) for sensing a charge flow between the source and the drain regions.

Abstract translation: 检测器装置：在源极和漏极区域（S，D）之间具有沟道区域的衬底（104）上的源极区（S），漏极区（D）和栅极接触（100），绝缘体层 在衬底上，包括填充有导体材料的通孔（140,142,144），其中通孔（140,142,144）设置在源极，漏极区域和栅极接触之上，通过绝缘体的附加通孔（152） 层，限定通向通道区域的第一侧的第一室，从该第一室通过沟道区蚀刻的纳米孔，以及将第一室连接到第二室;驱动装置（60），用于在 两个腔室，用于在源极和漏极区域和栅极之间提供电压的驱动装置，用于感测源极和漏极区域之间的电荷流的电流传感器（64）。