公开(公告)号：US20090001407A1

公开(公告)日：2009-01-01

申请号：US12199764

申请日：2008-08-27

申请人： Hiroshi OSAWA ,  Naoki FUKUNAGA

发明人： Hiroshi OSAWA ,  Naoki FUKUNAGA

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00012

摘要： There is provided a semiconductor light-emitting device having excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device 1 includes: an n-type semiconductor layer 12, a light-emitting layer 13, a p-type semiconductor layer 14, a titanium oxide-based conductive film layer 15, and a translucent film layer 16 laminated in this order, and a concavo-convex surface is formed on at least a part of the surface of the titanium oxide-based conductive film layer 15.

摘要翻译： 提供了一种具有优异的光提取效率的半导体发光器件，其制造方法和灯。 半导体发光器件1包括：n型半导体层12，发光层13，p型半导体层14，氧化钛系导电膜层15和层叠在其中的半透明膜层16 在氧化钛系导电膜层15的表面的至少一部分上形成有凹凸表面。

公开(公告)号：US6114740A

公开(公告)日：2000-09-05

申请号：US944101

申请日：1997-09-30

申请人： Takahiro Takimoto ,  Naoki Fukunaga ,  Masaru Kubo

发明人： Takahiro Takimoto ,  Naoki Fukunaga ,  Masaru Kubo

IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L31/02 ,  H01L31/10 ,  A01L31/06 ,  H01L31/00

CPC分类号： H01L27/144 ,  H01L31/02024

摘要： The circuit-integrating light-receiving element of this invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type formed over the semiconductor substrate; a first semiconductor layer of the first conductivity type for dividing the first semiconductor layer into semiconductor regions of the second conductivity type; light-detecting sections being constituted by the divided semiconductor regions and underlying regions of the semiconductor substrate, a divided photodiode being composed of the light-detecting sections; a second semiconductor layer of the second conductivity type formed only in the vicinity of the first semiconductor layer of the first conductivity type functioning as a division section of the divided photodiode and within the regions of the semiconductor substrate forming the respective light-detecting sections; and a second semiconductor layer of the first conductivity type formed in a surface region of the first semiconductor layer of the second conductivity type including the division section so as to cover an upper part of the second semiconductor layer of the second conductivity type.

摘要翻译： 本发明的电路集成光接收元件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的第二导电类型的第一半导体层; 第一导电类型的第一半导体层，用于将第一半导体层分成第二导电类型的半导体区域; 光检测部分由半导体衬底的划分的半导体区域和下面的区域构成，由光检测部分组成的分隔光电二极管; 第二导电类型的第二半导体层仅形成在用作分隔光电二极管的分割部分的第一导电类型的第一半导体层附近并且在形成各个光检测部分的半导体衬底的区域内; 以及第一导电类型的第二半导体层，形成在包括分隔部分的第二导电类型的第一半导体层的表面区域中，以覆盖第二导电类型的第二半导体层的上部。

公开(公告)号：US6005278A

公开(公告)日：1999-12-21

申请号：US12820

申请日：1998-01-23

申请人： Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo

发明人： Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo

IPC分类号： H01L27/146 ,  H01L31/00

CPC分类号： H01L27/14643

摘要： A divided photodiode includes a semiconductor substrate; a semiconductor layer formed on a surface of the semiconductor substrate; and a plurality of isolating diffusion regions formed in a plurality of regions in the semiconductor layer so as to respectively extend from a surface of the semiconductor layer opposite to the other surface thereof in contact with a surface of the semiconductor substrate and to reach regions under the surface of the semiconductor substrate, thereby dividing the semiconductor layer into at least three semiconductor regions. A first buried diffusion region is further formed under the other isolating diffusion regions except for a particular one located in an isolating section in a combination of a plurality of the semiconductor regions which are adjacent to each other via the isolating section, and a depletion of the semiconductor substrate in a region under the other isolating diffusion region by the application of a reverse bias thereto is suppressed.

摘要翻译： 分光电二极管包括半导体衬底; 形成在所述半导体衬底的表面上的半导体层; 以及形成在所述半导体层中的多个区域中的多个隔离扩散区域，以分别从与所述半导体衬底的表面接触的其他表面的所述半导体层的表面延伸并到达所述半导体衬底的表面下方的区域 表面，从而将半导体层分成至少三个半导体区域。 除了通过隔离部分彼此相邻的多个半导体区域的组合中的位于隔离部分中的特定一个隔离扩散区域之外，第一掩埋扩散区域进一步形成，并且， 通过施加反向偏压，在另一个隔离扩散区域下的区域中的半导体衬底被抑制。

公开(公告)号：US08334200B2

公开(公告)日：2012-12-18

申请号：US12296849

申请日：2007-04-13

申请人： Naoki Fukunaga ,  Hiroshi Osawa

发明人： Naoki Fukunaga ,  Hiroshi Osawa

IPC分类号： H01L21/283 ,  H01L21/441

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention provides a semiconductor light-emitting device capable of effectively emitting ultraviolet light and a method of manufacturing the same. A semiconductor light-emitting device 1 includes: a p-type semiconductor layer 14; a semiconductor layer that has an emission wavelength in at least an ultraviolet range; and a transparent electrode 15 that is formed on the p-type semiconductor layer 14. The transparent electrode 15 includes a crystallized IZO film.

摘要翻译： 本发明提供能够有效地发射紫外光的半导体发光器件及其制造方法。 半导体发光器件1包括：p型半导体层14; 具有至少紫外线范围的发光波长的半导体层; 以及形成在p型半导体层14上的透明电极15.透明电极15包括结晶的IZO膜。

公开(公告)号：US20110220872A1

公开(公告)日：2011-09-15

申请号：US13114113

申请日：2011-05-24

申请人： Naoki FUKUNAGA ,  Hironao SHINOHARA

发明人： Naoki FUKUNAGA ,  Hironao SHINOHARA

IPC分类号： H01L33/06

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/38 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In2O3 crystal having a bixbyite structure. Also discussed is a method of manufacturing the device.

摘要翻译： 一种化合物半导体发光器件，包括由化合物半导体制成的n型半导体层，发光层和p型半导体层，形成在衬底上，n型半导体层和 堆叠p型半导体层以便在其间插入发光层，第一导电透明电极和第二导电电极。 第一导电透明电极由含有二氧化硅结构的In 2 O 3晶体的IZO膜制成。 还讨论了制造该装置的方法。

公开(公告)号：US07972952B2

公开(公告)日：2011-07-05

申请号：US12095175

申请日：2007-12-06

申请人： Naoki Fukunaga ,  Hironao Shinohara

发明人： Naoki Fukunaga ,  Hironao Shinohara

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/38 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In2O3 crystal having a bixbyite structure. Also discussed is a method of manufacturing the device.

摘要翻译： 一种化合物半导体发光器件，包括由化合物半导体制成的n型半导体层，发光层和p型半导体层，形成在衬底上，n型半导体层和 堆叠p型半导体层以便在其间插入发光层，第一导电透明电极和第二导电电极。 第一导电透明电极由含有二氧化硅结构的In 2 O 3晶体的IZO膜制成。 还讨论了制造该装置的方法。

公开(公告)号：US20070145484A1

公开(公告)日：2007-06-28

申请号：US11591479

申请日：2006-11-02

申请人： Makoto Hosokawa ,  Toshihiko Fukushima ,  Naoki Fukunaga

发明人： Makoto Hosokawa ,  Toshihiko Fukushima ,  Naoki Fukunaga

IPC分类号： H01L23/62

CPC分类号： H01L27/0259

摘要： A regulator circuit including an output-stage transistor for supplying a current to an external circuit has an electrostatic protection transistor formed in parallel with the output-stage transistor. The base of the electrostatic protection transistor is connected to, for example, the base of the output-stage transistor, or alternatively to a ground line or to the emitter of the electrostatic protection transistor itself.

摘要翻译： 包括用于向外部电路提供电流的输出级晶体管的调节器电路具有与输出级晶体管并联形成的静电保护晶体管。 静电保护晶体管的基极连接到例如输出级晶体管的基极，或者替代地连接到静电保护晶体管本身的接地线或发射极。

公开(公告)号：US06404029B1

公开(公告)日：2002-06-11

申请号：US09656461

申请日：2000-09-06

申请人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

发明人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

IPC分类号： H01L2714

CPC分类号： H01L27/1443 ,  H01L31/0352

摘要： A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer. A depletion layer which is formed in the first semiconductor layer when a reverse bias voltage is applied to the at least one photodiode portion has a field intensity of about 0.3 V/&mgr;m or more.

摘要翻译： 光敏器件包括半导体衬底和第一半导体层，它们都是第一导电型，半导体层形成在半导体衬底上，杂质浓度低于半导体衬底的半导体层。 第二导电类型的第二半导体层形成在第一半导体层上，并且从第二半导体层的表面形成至少一个第一导电类型的扩散层，以到达第一半导体层的表面 。 扩散层将第二半导体层细分为多个半导体区域在多个半导体区域和第一半导体层中的至少一个之间的接合处形成至少一个用于将信号光转换成电信号的光电二极管部分。 当向至少一个光电二极管部分施加反向偏置电压时，在第一半导体层中形成的耗尽层具有约0.3V / m 2以上的场强度。

公开(公告)号：US5602415A

公开(公告)日：1997-02-11

申请号：US458772

申请日：1995-06-02

申请人： Masaru Kubo ,  Naoki Fukunaga ,  Motohiko Yamamoto

发明人： Masaru Kubo ,  Naoki Fukunaga ,  Motohiko Yamamoto

IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L31/10 ,  H01L31/00

CPC分类号： H01L27/1443

摘要： A light receiving device including a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed on the semiconductor substrate of the first conductivity type; and a semiconductor layer of the first conductivity type which elongates from a surface of the first semiconductor substrate of the second conductivity type to reach a surface of the semiconductor substrate of the first conductivity type, the semiconductor layer splitting the first semiconductor layer of the second conductivity type into a plurality of semiconductor regions of the second conductivity type. The portion of the semiconductor layer of the first conductivity type which overlaps with the semiconductor substrate of the first conductivity type is formed as a semiconductor region of the first conductivity type and has a high-impurity density. The semiconductor regions of the second conductivity type, and semiconductor substrate of the first conductivity type below such regions form a plurality of light detecting photodiode portions for detecting signal light. The device further includes a second semiconductor layer of the second conductivity type being buried in a part of the semiconductor substrate of the first conductivity type which constitutes each of the light detecting photodiode portions.

摘要翻译： 一种光接收装置，包括第一导电类型的半导体衬底; 形成在第一导电类型的半导体衬底上的第二导电类型的第一半导体层; 以及第一导电类型的半导体层，其从第二导电类型的第一半导体衬底的表面延伸到达第一导电类型的半导体衬底的表面，半导体层将第二半导体层的第二导电率 形成第二导电类型的多个半导体区域。 与第一导电类型的半导体衬底重叠的第一导电类型的半导体层的部分形成为第一导电类型的半导体区域并且具有高杂质密度。 第二导电类型的半导体区域和在这种区域之下的第一导电类型的半导体衬底形成用于检测信号光的多个光检测光电二极管部分。 该器件还包括第二导电类型的第二半导体层，其被埋在构成每个光检测光电二极管部分的第一导电类型的半导体衬底的一部分中。

公开(公告)号：US08207003B2

公开(公告)日：2012-06-26

申请号：US12297989

申请日：2007-04-23

申请人： Naoki Fukunaga ,  Hiroshi Osawa

发明人： Naoki Fukunaga ,  Hiroshi Osawa

IPC分类号： H01L21/00

CPC分类号： C23C14/5813 ,  C23C14/086 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016

摘要： Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (Vf) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film 15 including a dopant is laminated on a p-type semiconductor layer 14 of a gallium nitride-based compound semiconductor device 1. The transparent conductive oxide film 15 is subjected to a laser annealing process using a laser after the lamination of the transparent conductive oxide film 15.

摘要翻译： 提供一种制造具有低驱动电压（Vf）和高的光输出耦合效率的氮化镓基化合物半导体发光器件的方法，氮化镓基化合物半导体发光器件和灯。 在制造氮化镓系化合物半导体发光元件的方法中，在氮化镓系化合物半导体器件1的p型半导体层14上层叠包含掺杂剂的透明导电氧化物膜15.透明导电性 在透明导电氧化物膜15层压之后，使用激光对氧化膜15进行激光退火处理。