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    Light receiving device with isolation regions
    1.
    发明授权
    Light receiving device with isolation regions 失效
    具有隔离区域的光接收装置

    公开(公告)号：US5602415A

    公开(公告)日：1997-02-11

    申请号：US458772

    申请日：1995-06-02

    申请人： Masaru Kubo ,  Naoki Fukunaga ,  Motohiko Yamamoto

    发明人： Masaru Kubo ,  Naoki Fukunaga ,  Motohiko Yamamoto

    IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L31/10 ,  H01L31/00

    CPC分类号： H01L27/1443

    摘要： A light receiving device including a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed on the semiconductor substrate of the first conductivity type; and a semiconductor layer of the first conductivity type which elongates from a surface of the first semiconductor substrate of the second conductivity type to reach a surface of the semiconductor substrate of the first conductivity type, the semiconductor layer splitting the first semiconductor layer of the second conductivity type into a plurality of semiconductor regions of the second conductivity type. The portion of the semiconductor layer of the first conductivity type which overlaps with the semiconductor substrate of the first conductivity type is formed as a semiconductor region of the first conductivity type and has a high-impurity density. The semiconductor regions of the second conductivity type, and semiconductor substrate of the first conductivity type below such regions form a plurality of light detecting photodiode portions for detecting signal light. The device further includes a second semiconductor layer of the second conductivity type being buried in a part of the semiconductor substrate of the first conductivity type which constitutes each of the light detecting photodiode portions.

    摘要翻译： 一种光接收装置，包括第一导电类型的半导体衬底; 形成在第一导电类型的半导体衬底上的第二导电类型的第一半导体层; 以及第一导电类型的半导体层，其从第二导电类型的第一半导体衬底的表面延伸到达第一导电类型的半导体衬底的表面，半导体层将第二半导体层的第二导电率 形成第二导电类型的多个半导体区域。 与第一导电类型的半导体衬底重叠的第一导电类型的半导体层的部分形成为第一导电类型的半导体区域并且具有高杂质密度。 第二导电类型的半导体区域和在这种区域之下的第一导电类型的半导体衬底形成用于检测信号光的多个光检测光电二极管部分。 该器件还包括第二导电类型的第二半导体层，其被埋在构成每个光检测光电二极管部分的第一导电类型的半导体衬底的一部分中。

    Photodetector element containing circuit element and manufacturing method thereof
    2.
    发明授权
    Photodetector element containing circuit element and manufacturing method thereof 失效
    含有检测元件的电路元件及其制造方法

    公开(公告)号：US6127715A

    公开(公告)日：2000-10-03

    申请号：US685676

    申请日：1996-07-24

    申请人： Motohiko Yamamoto ,  Masaru Kubo

    发明人： Motohiko Yamamoto ,  Masaru Kubo

    IPC分类号： H01L27/146 ,  H01L27/14 ,  H01L27/15 ,  H01L31/0216 ,  H01L31/04 ,  H01L31/10 ,  H01L31/103 ,  H01L31/173 ,  H01L31/18 ,  H01S5/00 ,  H01L31/00 ,  H01L31/12

    CPC分类号： H01L31/103 ,  H01L31/02165 ,  H01L31/173 ,  H01L31/18

    摘要： Si.sub.3 N.sub.4 having high humidity resistance is used as a surface protecting insulating film covering a metal layer. At a bonding pad portion where metal layer is directly exposed, coverage is provided by anti-corrosion metal portion consisting of a titanium-tungsten alloy layer and gold layers. At a signal processing circuit portion, light intercepting structure and interconnection are provided similarly by titanium-tungsten alloy layer and gold layer. Thus humidity resistance of a photodetector element containing a circuit element is improved, and the gold layer allows direct die-bonding of a laser chip or the like. Further, since light intercepting structure and interconnection can be provided at the signal processing circuit portion simultaneously with the formation of gold layer for the bonding pad portion, the number of manufacturing steps can be reduced.

    摘要翻译： 使用具有高耐湿性的Si 3 N 4作为覆盖金属层的表面保护绝缘膜。 在金属层直接暴露的接合焊盘部分，由钛 - 钨合金层和金层组成的防腐金属部分提供覆盖。 在信号处理电路部分，类似地由钛 - 钨合金层和金层提供遮光结构和互连。 因此，包含电路元件的光电检测元件的耐湿性得到改善，金层允许激光芯片等的直接芯片接合。 此外，由于可以在形成用于接合焊盘部分的金层的同时在信号处理电路部分提供遮光结构和互连，因此可以减少制造步骤的数量。

    Circuit-integrating light-receiving element
    3.
    发明授权
    Circuit-integrating light-receiving element 失效
    电路集成光接收元件

    公开(公告)号：US6114740A

    公开(公告)日：2000-09-05

    申请号：US944101

    申请日：1997-09-30

    申请人： Takahiro Takimoto ,  Naoki Fukunaga ,  Masaru Kubo

    发明人： Takahiro Takimoto ,  Naoki Fukunaga ,  Masaru Kubo

    IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L31/02 ,  H01L31/10 ,  A01L31/06 ,  H01L31/00

    CPC分类号： H01L27/144 ,  H01L31/02024

    摘要： The circuit-integrating light-receiving element of this invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type formed over the semiconductor substrate; a first semiconductor layer of the first conductivity type for dividing the first semiconductor layer into semiconductor regions of the second conductivity type; light-detecting sections being constituted by the divided semiconductor regions and underlying regions of the semiconductor substrate, a divided photodiode being composed of the light-detecting sections; a second semiconductor layer of the second conductivity type formed only in the vicinity of the first semiconductor layer of the first conductivity type functioning as a division section of the divided photodiode and within the regions of the semiconductor substrate forming the respective light-detecting sections; and a second semiconductor layer of the first conductivity type formed in a surface region of the first semiconductor layer of the second conductivity type including the division section so as to cover an upper part of the second semiconductor layer of the second conductivity type.

    摘要翻译： 本发明的电路集成光接收元件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的第二导电类型的第一半导体层; 第一导电类型的第一半导体层，用于将第一半导体层分成第二导电类型的半导体区域; 光检测部分由半导体衬底的划分的半导体区域和下面的区域构成，由光检测部分组成的分隔光电二极管; 第二导电类型的第二半导体层仅形成在用作分隔光电二极管的分割部分的第一导电类型的第一半导体层附近并且在形成各个光检测部分的半导体衬底的区域内; 以及第一导电类型的第二半导体层，形成在包括分隔部分的第二导电类型的第一半导体层的表面区域中，以覆盖第二导电类型的第二半导体层的上部。

    Divided photodiode
    4.
    发明授权
    Divided photodiode 失效
    分光电二极管

    公开(公告)号：US6005278A

    公开(公告)日：1999-12-21

    申请号：US12820

    申请日：1998-01-23

    申请人： Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo

    发明人： Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo

    IPC分类号： H01L27/146 ,  H01L31/00

    CPC分类号： H01L27/14643

    摘要： A divided photodiode includes a semiconductor substrate; a semiconductor layer formed on a surface of the semiconductor substrate; and a plurality of isolating diffusion regions formed in a plurality of regions in the semiconductor layer so as to respectively extend from a surface of the semiconductor layer opposite to the other surface thereof in contact with a surface of the semiconductor substrate and to reach regions under the surface of the semiconductor substrate, thereby dividing the semiconductor layer into at least three semiconductor regions. A first buried diffusion region is further formed under the other isolating diffusion regions except for a particular one located in an isolating section in a combination of a plurality of the semiconductor regions which are adjacent to each other via the isolating section, and a depletion of the semiconductor substrate in a region under the other isolating diffusion region by the application of a reverse bias thereto is suppressed.

    摘要翻译： 分光电二极管包括半导体衬底; 形成在所述半导体衬底的表面上的半导体层; 以及形成在所述半导体层中的多个区域中的多个隔离扩散区域，以分别从与所述半导体衬底的表面接触的其他表面的所述半导体层的表面延伸并到达所述半导体衬底的表面下方的区域 表面，从而将半导体层分成至少三个半导体区域。 除了通过隔离部分彼此相邻的多个半导体区域的组合中的位于隔离部分中的特定一个隔离扩散区域之外，第一掩埋扩散区域进一步形成，并且， 通过施加反向偏压，在另一个隔离扩散区域下的区域中的半导体衬底被抑制。

    Light-receiving semiconductor device with plural buried layers
    5.
    发明授权
    Light-receiving semiconductor device with plural buried layers 失效
    具有多个埋层的光接收半导体器件

    公开(公告)号：US5466962A

    公开(公告)日：1995-11-14

    申请号：US227878

    申请日：1994-04-15

    申请人： Motohiko Yamamoto ,  Masaru Kubo

    发明人： Motohiko Yamamoto ,  Masaru Kubo

    IPC分类号： H01L21/761 ,  C04B20/10 ,  H01L27/144 ,  H01L31/0216 ,  H01L31/04 ,  H01L31/10 ,  H01L27/14 ,  H01L31/00

    CPC分类号： H01L27/1443 ,  C04B20/1077 ,  H01L31/02161

    摘要： A light-receiving semiconductor device with improved light sensitivity. On a semiconductor substrate of a first conductivity type is formed a plurality of buried layers of a second conductivity type divided by a narrow dividing region. A surface semiconductor layer of the first conductivity type covers the buried layers and the substrate. A connecting semiconductor region of the second conductivity type extends from each of the plurality of the buried layers to the surface of the surface semiconductor layer. An anti-light-reflecting film formed on the surface of the surface semiconductor layer covers a region above the dividing region as well as above the plurality of buried layers. Each of the plurality of buried layers forms a light responsive element with the substrate.

    摘要翻译： 具有改善的光敏度的光接收半导体器件。 在第一导电类型的半导体衬底上形成有被窄分割区划分的多个第二导电类型的掩埋层。 第一导电类型的表面半导体层覆盖掩埋层和衬底。 第二导电类型的连接半导体区域从多个掩埋层中的每一个延伸到表面半导体层的表面。 形成在表面半导体层的表面上的防反射膜覆盖分割区域上方的区域以及多个掩埋层的上方。 多个掩埋层中的每一个与基板形成光响应元件。

    Circuit-integrated light-receiving device
    7.
    发明授权
    Circuit-integrated light-receiving device 有权
    电路集成光接收装置

    公开(公告)号：US06313484B1

    公开(公告)日：2001-11-06

    申请号：US09472886

    申请日：1999-12-28

    申请人： Isamu Ohkubo ,  Masaru Kubo ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Mutsumi Oka ,  Toshimitsu Kasamatsu

    发明人： Isamu Ohkubo ,  Masaru Kubo ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Mutsumi Oka ,  Toshimitsu Kasamatsu

    IPC分类号： H01L2715

    CPC分类号： H01L27/1443

    摘要： A circuit-integrated light-receiving device of the present invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor crystal growth layer of the first conductivity type provided on a surface of the semiconductor substrate, wherein the first semiconductor crystal growth layer includes a first portion whose impurity concentration gradually decreases in a direction away from the surface of the semiconductor substrate and a second portion located in a first region above the first portion whose impurity concentration distribution is uniform in a depth direction; a buried diffusion layer of the first conductivity type located in a second region which is above the first portion of the first semiconductor crystal growth layer and does not overlap the first region; a second semiconductor crystal growth layer of a second conductivity type which is provided across a surface of the first semiconductor crystal growth layer and a surface of the buried diffusion layer; and a separation diffusion region having the first conductivity type for dividing the second semiconductor crystal growth layer into a light-receiving device section and a signal processing circuit section. The first region is located in the light-receiving device section. In the signal processing circuit section, the buried diffusion layer is in contact with the first portion of the first semiconductor crystal growth layer.

    摘要翻译： 本发明的电路集成光接收装置包括：第一导电类型的半导体衬底; 设置在所述半导体衬底的表面上的第一导电类型的第一半导体晶体生长层，其中所述第一半导体晶体生长层包括其杂质浓度在远离所述半导体衬底的表面的方向上逐渐减小的第一部分，以及第二半导体晶体生长层 位于第一部分上方的第一部分的部分，其杂质浓度分布在深度方向上是均匀的; 位于第一半导体晶体生长层的第一部分之上并且不与第一区域重叠的第二区域中的第一导电类型的掩埋扩散层; 设置在第一半导体晶体生长层的表面和掩埋扩散层的表面之间的第二导电类型的第二半导体晶体生长层; 以及具有第一导电类型的分离扩散区域，用于将第二半导体晶体生长层分割成光接收装置部分和信号处理电路部分。 第一区域位于光接收装置部分中。 在信号处理电路部中，埋入扩散层与第一半导体晶体生长层的第一部分接触。

    Light-receiving element
    8.
    发明授权
    Light-receiving element 失效
    光接收元件

    公开(公告)号：US6049117A

    公开(公告)日：2000-04-11

    申请号：US717347

    申请日：1996-09-20

    申请人： Naoki Fukunaga ,  Masaru Kubo

    发明人： Naoki Fukunaga ,  Masaru Kubo

    IPC分类号： H01L27/146 ,  H01L27/14 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/103 ,  H01L31/18 ,  H01L31/00 ,  H01L29/80 ,  H01L31/06 ,  H01L31/112

    CPC分类号： H01L31/103 ,  H01L27/1446 ,  H01L31/035281 ,  H01L31/1876 ,  Y02E10/50

    摘要： A light-receiving element includes a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed in a predetermined region on a surface of the semiconductor substrate of the first conductivity type; and at least one semiconductor region of the first conductivity type which is formed so as to extend from an upper surface of the first semiconductor layer of the second conductivity type to the surface of the semiconductor substrate of the first conductivity type, thereby dividing the first semiconductor layer of the second conductivity type into a plurality of semiconductor regions of the second conductivity type. In the light-receiving element, a specific resistance of the semiconductor substrate of the first conductivity type is set in a predetermined range such that a condition Xd.gtoreq.Xj is satisfied between a depth Xd of a depletion layer to be formed in the semiconductor substrate of the first conductivity type upon an application of an inverse bias and a diffusion depth Xj of the semiconductor region of the first conductivity type into the semiconductor substrate of the first conductivity type.

    摘要翻译： 光接收元件包括第一导电类型的半导体衬底; 第一导电类型的第一半导体层，形成在第一导电类型的半导体衬底的表面上的预定区域中; 以及形成为从第二导电类型的第一半导体层的上表面延伸到第一导电类型的半导体衬底的表面的第一导电类型的至少一个半导体区域，从而将第一半导体 第二导电类型的层形成第二导电类型的多个半导体区域。 在光接收元件中，将第一导电类型的半导体衬底的电阻率设定在预定范围内，使得在半导体中要形成的耗尽层的深度Xd之间满足条件Xd> / = Xj 在第一导电类型的半导体衬底中施加反向偏置和第一导电类型的半导体区域的扩散深度Xj的第一导电类型的衬底。