公开(公告)号：US20210193440A1

公开(公告)日：2021-06-24

申请号：US17117720

申请日：2020-12-10

Applicant: PSK INC.

Inventor： Young Jae MA ,  Sung Jin YOON ,  Hyo Jeong SEO ,  Jong Woo PARK

IPC: H01J37/32 ,  C23C4/04

Abstract: Embodiments of the inventive concept provide a substrate processing apparatus. The substrate treating apparatus comprises a process treating unit providing a treating space performed treating the substrate; a plasma generating unit generating the plasma discharging a process gas, and supplying the plasma to the treating space. The plasma generating unit provides a plasma chamber having a generating space of the plasma; an antenna wound to surround the plasma chamber outside the plasma chamber; a first coating film covering inside walls of the plasma chamber and comprising yttrium fluoride (YF3).

公开(公告)号：US20210151299A1

公开(公告)日：2021-05-20

申请号：US16701235

申请日：2019-12-03

Applicant: PSK INC.

Inventor： JUNG HYUN KANG

IPC: H01J37/32 ,  H01L21/67

Abstract: The inventive concept relates to an apparatus for processing a substrate. The apparatus for processing the substrate includes a housing having a process space, a support unit that supports the substrate in the process space, a plasma source that generates plasma from a process gas, and a baffle unit disposed over the support unit. The baffle unit includes a baffle having first holes formed therein through which the process gas and/or the plasma flows, and the baffle has second holes formed in an edge region thereof, each of which has a lengthwise direction inclined with respect to a radial direction of the baffle when viewed from above.

公开(公告)号：US20200211871A1

公开(公告)日：2020-07-02

申请号：US16557707

申请日：2019-08-30

Applicant: PSK INC. ,  PSK Holdings Inc.

Inventor： Je Hyeok RYU ,  Jae Kyeong YOO ,  Jung-Hyun KANG

IPC: H01L21/67 ,  H01L21/687

Abstract: Disclosed is a substrate processing apparatus that includes an interference member for minimizing a collision between a descending flow of gas supplied by a fan unit and a gas flow directed toward a transfer space from the inside of a container.

公开(公告)号：US20160020070A1

公开(公告)日：2016-01-21

申请号：US14467522

申请日：2014-08-25

Applicant: PSK INC.

Inventor： Hyun Jun KIM ,  Chulwon JOO ,  Kyung Min LEE

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/3266

Abstract: Provided is a plasma generating apparatus using a dual plasma source and a substrate treating apparatus including the same. A plasma generating apparatus may include: an RF power source supplying an RF signal; a plasma chamber providing a space for generating plasma; a first plasma source disposed on a portion of the plasma chamber to generate plasma; and a second plasma source disposed on another portion of the plasma chamber to generate plasma wherein the second source comprises a plurality of gas supply loops disposed along a circumference of the plasma chamber and supplied with a process gas therein to supply the process gas to the plasma chamber; and a plurality of electromagnetic field applicators coupled to the gas supply loop and receiving the RF signal to generate plasma from the process gas.

Abstract translation: 提供了一种使用双等离子体源的等离子体产生装置和包括该等离子体源的基板处理装置。 等离子体发生装置可以包括：提供RF信号的RF电源; 等离子体室，其提供用于产生等离子体的空间; 设置在所述等离子体室的一部分上以产生等离子体的第一等离子体源; 以及设置在所述等离子体室的另一部分上以产生等离子体的第二等离子体源，其中所述第二源包括沿所述等离子体室的圆周设置并在其中供应工艺气体的多个气体供应环，以将处理气体供应到所述等离子体 房间 以及耦合到所述气体供应回路并接收所述RF信号以从所述处理气体产生等离子体的多个电磁场施加器。

公开(公告)号：US09214357B1

公开(公告)日：2015-12-15

申请号：US14465131

申请日：2014-08-21

Applicant: PSK INC.

Inventor： Young Yeon Ji ,  Won Bum Seo ,  Byoung Hoon Kim

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/0234 ,  H01J37/32724 ,  H01L21/02046 ,  H01L21/31116

Abstract: The present invention disclosed herein relates to a substrate treating apparatus and method. The substrate treating method includes: providing a substrate on which an oxide layer is formed; treating the oxide layer with a first process gas in a plasma state to substitute the treated oxide layer with a by-product layer; and heating the substrate to remove the by-product layer at a temperature which is above a first heating temperature at which the by-product layer is decomposed and is above a second heating temperature that is a boiling point of an additive by-product generated while the by-product layer is decomposed.

Abstract translation: 本文公开的本发明涉及一种基板处理装置和方法。 基板处理方法包括：提供其上形成有氧化物层的基板; 用处于等离子体状态的第一工艺气体处理氧化物层以用副产物层代替经处理的氧化物层; 并且加热基板以在副产物层分解的第一加热温度以上的温度下除去副产物层，并且高于作为副产物生成的沸点的第二加热温度，同时 副产物层被分解。

公开(公告)号：US20150200122A1

公开(公告)日：2015-07-16

申请号：US14553447

申请日：2014-11-25

Applicant: PSK INC.

Inventor： Sanghee EOM

IPC: H01L21/683 ,  H01L21/677

CPC classification number: H01L21/6838 ,  H01L21/67742

Abstract: Provided are a substrate transfer apparatus and method and a substrate processing apparatus. The substrate transfer apparatus includes: a body portion; an arm part coupled to the body portion, the arm part moving to allow the substrate to be transferred; a suction part provided with the arm portion, the suction part suctioning and fixing the substrate; and a control part controlling an operation of the substrate transfer apparatus, wherein the control part changes a suction point on the substrate to re-attempt suction when suction of the substrate by the suction part is unsuccessful.

Abstract translation: 提供了基板转印装置和方法以及基板处理装置。 基板传送装置包括：主体部分; 耦合到所述主体部分的臂部分，所述臂部分移动以允许所述基板被传送; 设置有所述臂部的吸引部，所述吸引部抽吸并固定所述基板; 以及控制部，其控制所述基板输送装置的动作，其中，所述控制部在所述吸引部的吸引不成功时，改变所述基板的吸入点，以重新进行抽吸。

公开(公告)号：US20150187545A1

公开(公告)日：2015-07-02

申请号：US14542891

申请日：2014-11-17

Applicant: PSK INC.

Inventor： Chang Weon LEE

IPC: H01J37/32

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  C23C16/4585 ,  H01J37/32091

Abstract: Provided is a substrate processing apparatus. The substrate treating apparatus includes a processing chamber, a substrate supporting unit, a plasma generation unit, a gas supplying unit, an exhaust adjusting unit, or the like. Residual gas and reaction by-products are generated in a chamber after a substrate is treated by using a gas supplied from the gas supplying unit or plasma excited by the plasma generation unit. The gas exhaust adjusting unit adjusts discharge amounts of residual gas and reaction by-products to adjust residence time or pressure of gas, plasma, or the like in the apparatus, thereby controlling a uniformity of the substrate treating process.

Abstract translation: 提供了一种基板处理装置。 基板处理装置包括处理室，基板支撑单元，等离子体生成单元，气体供给单元，排气调节单元等。 在通过使用从等离子体产生单元激发的气体供给单元供给的气体或等离子体发生单元所激发的等离子体处理基板之后，在室内产生残留气体和反应副产物。 排气调节单元调节残留气体和反应副产物的排出量，以调节装置中的气体，等离子体等的停留时间或压力，从而控制基板处理工艺的均匀性。

公开(公告)号：US20150136734A1

公开(公告)日：2015-05-21

申请号：US14541310

申请日：2014-11-14

Applicant: PSK Inc.

Inventor： Hee Sun Chae ,  Jeong Hee Cho ,  Jong Sik Lee ,  Han Saem Rhee ,  Hyun Jun Kim

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/3244

Abstract: Provided is a substrate treating apparatus including a first supplying unit, a second supplying unit, a first source, a second source, a gas separation member or the like. Plasma generated from a first gas supplied from a first supplying unit by the first source is used for treating a central area of a substrate. Plasma generated from a second gas supplied from a second supplying unit by the second source is used for treating an edge area of the substrate. A gas separation member prevents plasmas generated respectively from first and second gases from being mixed up.

Abstract translation: 提供了一种基板处理装置，其包括第一供给单元，第二供应单元，第一源，第二源，气体分离构件等。 由第一源从第一供应单元供应的第一气体产生的等离子体用于处理基板的中心区域。 使用由第二源从第二供给单元提供的第二气体产生的等离子体用于处理基板的边缘区域。 气体分离部件防止分别从第一和第二气体产生的等离子体混合。

公开(公告)号：US20140190513A1

公开(公告)日：2014-07-10

申请号：US14146314

申请日：2014-01-02

Applicant: PSK INC.

Inventor： Jongjin Lee ,  Bum Joon Park ,  Tae Hoon Kim ,  Chang Weon Lee ,  Sunwoong Yim ,  Han Kyu Lee

IPC: H01L21/02

CPC classification number: H01L21/02046 ,  H01J37/32192 ,  H01J37/32779 ,  H01L21/02076 ,  H01L21/67383 ,  H01L21/67766 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/68707 ,  H01L2221/68327 ,  H01L2221/6834

Abstract: Provided is a substrate treatment apparatus. The substrate treatment apparatus includes a load port on which a carrier accommodating a plurality of substrates to which a back-ground wafer is attached to a mounting tape fixed to a frame ring is placed, a plasma treatment unit supplying plasma to treat a top surface of the wafer, and a substrate transfer unit transferring the substrate between the carrier and the plasma treatment unit.

Abstract translation: 提供了一种基板处理装置。 基板处理装置包括负载端口，载置有容纳多个基板的载体，背面晶片与固定在框架环上的安装带相连接，等离子体处理单元，其供给等离子体以处理 晶片和在载体和等离子体处理单元之间转移衬底的衬底转移单元。

公开(公告)号：US20140063854A1

公开(公告)日：2014-03-06

申请号：US14016766

申请日：2013-09-03

Applicant: PSK INC.

Inventor： Kyoung Soo Park ,  Sung Jae Lee

IPC: F21V8/00

CPC classification number: G02B6/0065 ,  G02B6/0036

Abstract: Provided is an apparatus for manufacturing a light guiding plate. The apparatus for manufacturing a light guiding plate includes an unwinding unit unwinding a film formed of a flexible material and wound in a roll shape, a winding unit winding the film provided from the unwinding unit in a roll shape, a surface treatment unit disposed between the unwinding unit and the winding unit to treat a surface of the film transferred into the winding part into a hydrophobic surface, a pattern formation unit disposed between the surface treatment unit and the winding unit to form a micro lens pattern on the surface of the film of which the surface is treated, and a pattern curing unit disposed between the pattern formation unit and the winding unit to cure the pattern.

Abstract translation: 提供一种制造导光板的装置。 用于制造导光板的装置包括展开单元，其退绕由柔性材料形成并卷绕成卷状的薄膜;卷绕单元，将由退绕单元设置的薄膜卷成卷状;表面处理单元， 退绕单元和卷绕单元，将转移到卷绕部分中的膜的表面处理成疏水表面;图案形成单元，设置在表面处理单元和卷绕单元之间，以在膜的表面上形成微透镜图案; 表面被处理的图案固化单元和布置在图案形成单元和卷绕单元之间以固化图案的图案固化单元。