Abstract:
The fabrication of an integrated circuit includes a first phase of producing an electronic chip and a second phase of producing at least one auxiliary component placed above the chip and of producing a protective cover which covers the auxiliary component. The first phase of producing the chip is effected from a first semiconductor substrate and comprises the formation of a cavity lying in a chosen region of the chip and emerging at the upper surface of the chip. The second production phase includes the production of the auxiliary component from a second semiconductor substrate, separate from the first, and then the placement in the cavity of the auxiliary component supported by the second substrate and the mutual adhesion of the second substrate to the upper surface of the chip lying outside the cavity. The second substrate then also forms the protective cover.
Abstract:
The disclosure relates to a method of manufacturing vibratory elements, comprising forming on a substrate a multilayer structure by an integrated circuit manufacturing method, the multilayer structure comprising an element susceptible of vibrating when it is subjected to an electrical signal, and electrodes for transmitting an electrical signal to the vibratory element, the vibratory element comprising a mechanical coupling face that is able to transmit to control element vibrations perceptible by a user.
Abstract:
A switchable filter may include a first acoustic resonator including first electrodes, and a first resonant layer between the first electrodes and having electrostrictive material. The switchable filter may further include a second acoustic resonator including second electrodes, and a second resonant layer between the second electrodes and having electrostrictive material. The second acoustic resonator may be acoustically coupled with the first acoustic resonator. At least one of the first electrodes and at least one of the second electrodes may be arranged between the first resonant layer and the second resonant layer. The electrostrictive material may adjust a resonance and a filter switching of the first and second acoustic resonators as a function of a control voltage applied to terminals of the first and second acoustic resonators. Two electrodes from one of the first electrodes and the second electrodes may be filter input electrodes. Two electrodes from one of the first electrodes and the second electrodes may be filter output electrodes.
Abstract:
A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.
Abstract:
An acoustic resonator assembly includes a layer of high-acoustic-impedance material and a layer of low-acoustic-impedance material made of a low-electrical-permittivity material. This assembly may support the resonator over an interconnect layer or act as a decoupling assembly between two active elements of the resonator. The assembly may alternatively include three low-acoustic impedance layers. Alternatively, the assembly may include three acoustic impedance layers wherein two of the layers are low acoustic impedance layers and the third layer has a higher acoustic impedance than the first two or alternatively is a high-acoustic impedance layer.
Abstract:
A support 7 for an acoustic resonator 4 includes at least one bilayer assembly having a layer of high acoustic impedance material 11 and a layer of low acoustic impedance material 12 made of material having a low electrical permittivity.
Abstract:
A switchable filter may include a first acoustic resonator including first electrodes, and a first resonant layer between the first electrodes and having electrostrictive material. The switchable filter may further include a second acoustic resonator including second electrodes, and a second resonant layer between the second electrodes and having electrostrictive material. The second acoustic resonator may be acoustically coupled with the first acoustic resonator. At least one of the first electrodes and at least one of the second electrodes may be arranged between the first resonant layer and the second resonant layer. The electrostrictive material may adjust a resonance and a filter switching of the first and second acoustic resonators as a function of a control voltage applied to terminals of the first and second acoustic resonators. Two electrodes from one of the first electrodes and the second electrodes may be filter input electrodes. Two electrodes from one of the first electrodes and the second electrodes may be filter output electrodes.
Abstract:
An acoustic resonator assembly includes a layer of high-acoustic-impedance material and a layer of low-acoustic-impedance material made of a low-electrical-permittivity material. This assembly may support the resonator over an interconnect layer or act as a decoupling assembly between two active elements of the resonator. The assembly may alternatively include three low-acoustic impedance layers. Alternatively, the assembly may include three acoustic impedance layers wherein two of the layers are low acoustic impedance layers and the third layer has a higher acoustic impedance than the first two or alternatively is a high-acoustic impedance layer.
Abstract:
A method for forming a variable capacitor including a conductive strip covering the inside of a cavity, and a flexible conductive membrane placed above the cavity, the cavity being formed according to the steps of: forming a recess in the substrate; placing a malleable material in the recess; having a stamp bear against the substrate at the level of the recess to give the upper part of the malleable material a desired shape; hardening the malleable material; and removing the stamp.
Abstract:
An electromechanical resonator includes a monocrystalline-silicon substrate (S) provided with an active zone (ZA) delimited by an insulating region, a vibrating beam (10) anchored by at least one of its free ends on the insulating region and including a monocrystalline-silicon vibrating central part (12), and a control electrode (E) arranged above the beam and bearing on the active zone. The central part (12) of the beam is separated from the active zone (ZA) and from the control electrode (E).