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公开(公告)号：US07586391B2
公开(公告)日：2009-09-08
申请号：US11845362
申请日：2007-08-27
Applicant: Alexandre Volatier , Pascal Ancey , Bertrand Dubus
Inventor： Alexandre Volatier , Pascal Ancey , Bertrand Dubus
IPC: H03H9/54 , H03H9/70 , H01L41/083
CPC classification number: H03H9/60 , H03H9/583 , H03H9/584 , H03H9/587 , H03H9/588 , H03H9/589 , Y10T29/42
Abstract: A switchable filter may include a first acoustic resonator including first electrodes, and a first resonant layer between the first electrodes and having electrostrictive material. The switchable filter may further include a second acoustic resonator including second electrodes, and a second resonant layer between the second electrodes and having electrostrictive material. The second acoustic resonator may be acoustically coupled with the first acoustic resonator. At least one of the first electrodes and at least one of the second electrodes may be arranged between the first resonant layer and the second resonant layer. The electrostrictive material may adjust a resonance and a filter switching of the first and second acoustic resonators as a function of a control voltage applied to terminals of the first and second acoustic resonators. Two electrodes from one of the first electrodes and the second electrodes may be filter input electrodes. Two electrodes from one of the first electrodes and the second electrodes may be filter output electrodes.
Abstract translation: 可切换滤波器可以包括包括第一电极的第一声谐振器和在第一电极之间并具有电致伸缩材料的第一谐振层。 可切换滤波器还可以包括包括第二电极的第二声谐振器和在第二电极之间并具有电致伸缩材料的第二谐振层。 第二声谐振器可以与第一声谐振器声学耦合。 第一电极中的至少一个和第二电极中的至少一个可以布置在第一谐振层和第二谐振层之间。 电致伸缩材料可以根据施加到第一和第二声谐振器的端子的控制电压来调节第一和第二声谐振器的谐振和滤波器切换。 来自第一电极和第二电极中的一个的两个电极可以是滤波器输入电极。 来自第一电极和第二电极之一的两个电极可以是滤波器输出电极。
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公开(公告)号：US20080129416A1
公开(公告)日：2008-06-05
申请号：US11845362
申请日：2007-08-27
Applicant: Alexandre VOLATIER , Pascal Ancey , Bertrand Dubus
Inventor： Alexandre VOLATIER , Pascal Ancey , Bertrand Dubus
CPC classification number: H03H9/60 , H03H9/583 , H03H9/584 , H03H9/587 , H03H9/588 , H03H9/589 , Y10T29/42
Abstract: A switchable filter may include a first acoustic resonator including first electrodes, and a first resonant layer between the first electrodes and having electrostrictive material. The switchable filter may further include a second acoustic resonator including second electrodes, and a second resonant layer between the second electrodes and having electrostrictive material. The second acoustic resonator may be acoustically coupled with the first acoustic resonator. At least one of the first electrodes and at least one of the second electrodes may be arranged between the first resonant layer and the second resonant layer. The electrostrictive material may adjust a resonance and a filter switching of the first and second acoustic resonators as a function of a control voltage applied to terminals of the first and second acoustic resonators. Two electrodes from one of the first electrodes and the second electrodes may be filter input electrodes. Two electrodes from one of the first electrodes and the second electrodes may be filter output electrodes.
Abstract translation: 可切换滤波器可以包括包括第一电极的第一声谐振器和在第一电极之间并具有电致伸缩材料的第一谐振层。 可切换滤波器还可以包括包括第二电极的第二声谐振器和在第二电极之间并具有电致伸缩材料的第二谐振层。 第二声谐振器可以与第一声谐振器声学耦合。 第一电极中的至少一个和第二电极中的至少一个可以布置在第一谐振层和第二谐振层之间。 电致伸缩材料可以根据施加到第一和第二声谐振器的端子的控制电压来调节第一和第二声谐振器的谐振和滤波器切换。 来自第一电极和第二电极之一的两个电极可以是滤波器输入电极。 来自第一电极和第二电极之一的两个电极可以是滤波器输出电极。
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公开(公告)号：US07804383B2
公开(公告)日：2010-09-28
申请号：US11845268
申请日：2007-08-27
Applicant: Alexandre Volatier , Pascal Ancey , Bertrand Dubus
Inventor： Alexandre Volatier , Pascal Ancey , Bertrand Dubus
CPC classification number: H03H9/02228 , Y10T29/42
Abstract: A coupled Lamb wave resonator filter includes first and second Lamb wave resonators. The first Lamb wave resonator includes a first resonant layer, and first and second electrodes on opposite sides of the first resonant layer. The second Lamb wave resonator includes a second resonant layer, and third and fourth electrodes on opposite sides of the second resonant layer. One of the sides of the first resonant layer belongs to a plane parallel to a plane corresponding to one of the sides of the second resonant layer. Both planes pass through the third and fourth electrodes of the second Lamb wave resonator. A periodic lattice acoustically couples the first and second resonant layers.
Abstract translation: 耦合兰姆波谐振滤波器包括第一和第二兰姆波谐振器。 第一兰姆波谐振器包括第一谐振层，以及在第一谐振层的相对侧上的第一和第二电极。 第二兰姆波谐振器包括第二谐振层，第二谐振层的相对侧上的第三和第四电极。 第一共振层的一个侧面属于平行于与第二共振层的一个侧面相对应的平面的平面。 两个平面通过第二兰姆波谐振器的第三和第四电极。 周期性晶格声耦合第一和第二谐振层。
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公开(公告)号：US20080048804A1
公开(公告)日：2008-02-28
申请号：US11845268
申请日：2007-08-27
Applicant: Alexandre Volatier , Pascal Ancey , Bertrand Dubus
Inventor： Alexandre Volatier , Pascal Ancey , Bertrand Dubus
CPC classification number: H03H9/02228 , Y10T29/42
Abstract: A coupled Lamb wave resonator filter includes first and second Lamb wave resonators. The first Lamb wave resonator includes a first resonant layer, and first and second electrodes on opposite sides of the first resonant layer. The second Lamb wave resonator includes a second resonant layer, and third and fourth electrodes on opposite sides of the second resonant layer. One of the sides of the first resonant layer belongs to a plane parallel to a plane corresponding to one of the sides of the second resonant layer. Both planes pass through the third and fourth electrodes of the second Lamb wave resonator. A periodic lattice acoustically couples the first and second resonant layers.
Abstract translation: 耦合兰姆波谐振滤波器包括第一和第二兰姆波谐振器。 第一兰姆波谐振器包括第一谐振层，以及在第一谐振层的相对侧上的第一和第二电极。 第二兰姆波谐振器包括第二谐振层，第二谐振层的相对侧上的第三和第四电极。 第一共振层的一个侧面属于平行于与第二共振层的一个侧面相对应的平面的平面。 两个平面通过第二兰姆波谐振器的第三和第四电极。 周期性晶格声耦合第一和第二谐振层。
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公开(公告)号：US08212324B2
公开(公告)日：2012-07-03
申请号：US12419125
申请日：2009-04-06
Applicant: Gregory Caruyer , Karim Segueni , Pascal Ancey , Bertrand Dubus
Inventor： Gregory Caruyer , Karim Segueni , Pascal Ancey , Bertrand Dubus
CPC classification number: H03H9/02338 , H03H9/02433 , H03H9/2436 , H03H9/2463
Abstract: A Micro Electro Mechanical Systems resonance device includes a substrate, and an input electrode, connected to an alternating current source having an input frequency. The device also includes an output electrode, and at least one anchoring structure, connected to the substrate. The device further includes a vibratile structure connected to an anchoring structure by at least one junction, having a natural acoustic resonant frequency. The vibration under the effect of the input electrode, when it is powered, generates, on the output electrode, an alternating current wherein the output frequency is equal to the natural frequency. The vibratile structure and/or the anchoring structure includes a periodic structure. The periodic structure includes at least first and second zones different from each other, and corresponding respectively to first and second acoustic propagation properties.
Abstract translation: 微机电系统谐振装置包括连接到具有输入频率的交流电源的基板和输入电极。 该装置还包括输出电极和连接到基板的至少一个锚定结构。 该装置还包括通过至少一个接头连接到锚固结构的振动结构，具有自然的声共振频率。 在输入电极的作用下，在输入电极的作用下的振动在输出电极上产生交流电流，其中输出频率等于固有频率。 振动结构和/或锚定结构包括周期性结构。 周期性结构至少包括彼此不同的第一和第二区，并且分别对应于第一和第二声学传播特性。
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Patent Agency Ranking
公开(公告)号：US20090289314A1
公开(公告)日：2009-11-26
申请号：US12419125
申请日：2009-04-06
Applicant: Gregory CARUYER , Karim Segueni , Pascal Ancey , Bertrand Dubus
Inventor： Gregory CARUYER , Karim Segueni , Pascal Ancey , Bertrand Dubus
CPC classification number: H03H9/02338 , H03H9/02433 , H03H9/2436 , H03H9/2463
Abstract: A Micro Electro Mechanical Systems resonance device includes a substrate, and an input electrode, connected to an alternating current source having an input frequency. The device also includes an output electrode, and at least one anchoring structure, connected to the substrate. The device further includes a vibratile structure connected to an anchoring structure by at least one junction, having a natural acoustic resonant frequency. The vibration under the effect of the input electrode, when it is powered, generates, on the output electrode, an alternating current wherein the output frequency is equal to the natural frequency. The vibratile structure and/or the anchoring structure includes a periodic structure. The periodic structure includes at least first and second zones different from each other, and corresponding respectively to first and second acoustic propagation properties.
Abstract translation: 微机电系统谐振装置包括连接到具有输入频率的交流电源的基板和输入电极。 该装置还包括输出电极和连接到基板的至少一个锚定结构。 该装置还包括通过至少一个接头连接到锚固结构的振动结构，具有自然的声共振频率。 在输入电极的作用下，在输入电极的作用下的振动在输出电极上产生交流电流，其中输出频率等于固有频率。 振动结构和/或锚定结构包括周期性结构。 周期性结构至少包括彼此不同的第一和第二区，并且分别对应于第一和第二声学传播特性。
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公开(公告)号：US07565725B2
公开(公告)日：2009-07-28
申请号：US11512731
申请日：2006-08-30
Applicant: Guillaume Bouche , Fabrice Casset , Pascal Ancey
Inventor： Guillaume Bouche , Fabrice Casset , Pascal Ancey
IPC: H01G7/00
CPC classification number: H01G5/16 , Y10T29/435 , Y10T29/49002 , Y10T29/4913 , Y10T29/49139 , Y10T29/49147 , Y10T29/49165 , Y10T83/0476 , Y10T83/0505 , Y10T83/051 , Y10T83/0577
Abstract: A method for forming a variable capacitor including a conductive strip covering the inside of a cavity, and a flexible conductive membrane placed above the cavity, the cavity being formed according to the steps of: forming a recess in the substrate; placing a malleable material in the recess; having a stamp bear against the substrate at the level of the recess to give the upper part of the malleable material a desired shape; hardening the malleable material; and removing the stamp.
Abstract translation: 一种形成可变电容器的方法，所述可变电容器包括覆盖空腔内部的导电条和位于所述空腔上方的柔性导电膜，所述空腔根据以下步骤形成：在所述基板中形成凹部; 将可延展材料放置在凹槽中; 在凹部的水平处具有抵靠基板的印模，以使可延展材料的上部具有期望的形状; 硬化可延展材料; 并移除邮票。
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公开(公告)号：US07625772B2
公开(公告)日：2009-12-01
申请号：US11904859
申请日：2007-09-27
Applicant: Fabrice Casset , Cedric Durand , Pascal Ancey
Inventor： Fabrice Casset , Cedric Durand , Pascal Ancey
IPC: H01L21/00
CPC classification number: B81C1/0065 , B81B2201/0271 , B81B2207/015 , H03H3/0073 , H03H9/1057 , H03H9/2405 , H03H2009/02496
Abstract: Method for making an electromechanical component on a plane substrate and comprising at least one structure vibrating in the plane of the substrate and actuation electrodes. The method comprises at least the following steps in sequence: formation of the substrate comprising one silicon area partly covered by two insulating areas, formation of a sacrificial silicon and germanium alloy layer by selective epitaxy starting from the uncovered part of the silicon area, formation of a strongly doped silicon layer by epitaxy, comprising a monocrystalline area arranged on said sacrificial layer and two polycrystalline areas arranged on insulating areas, simultaneous formation of the vibrating structure and actuation electrodes, by etching of a predetermined pattern in the monocrystalline area designed to form spaces between the electrodes and the vibrating structure, elimination of said sacrificial silicon and germanium alloy layer by selective etching.
Abstract translation: 一种用于在平面基板上制造机电部件并且包括在所述基板和致动电极的平面中振动的至少一个结构的方法。 该方法至少包括以下步骤：基底的形成，其包括由两个绝缘区域部分覆盖的一个硅区域，通过从硅区域的未覆盖部分开始的选择性外延形成牺牲硅和锗合金层，形成 通过外延的强掺杂硅层，包括布置在所述牺牲层上的单晶区域和布置在绝缘区域上的两个多晶区域，同时形成振动结构和致动电极，通过在设计成形成空间的单晶区域中蚀刻预定图案 在电极和振动结构之间，通过选择性蚀刻消除所述牺牲硅和锗合金层。
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9.发明申请公开(公告)号：US20090140384A1
公开(公告)日：2009-06-04
申请号：US12367812
申请日：2009-02-09
Applicant: Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
Inventor： Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
CPC classification number: H01F41/301 , B82Y25/00 , B82Y40/00 , H01F10/007 , H01F10/136 , H01F10/138 , H01F10/147 , H01F10/3227 , H01F41/18 , H01F41/302 , H01L23/552 , H01L2924/0002 , Y10T428/256 , H01L2924/00
Abstract: A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.
Abstract translation: 薄的软磁膜将高磁化强度与绝缘特性相结合。 该薄膜通过浸渍在非晶基底中的富铁铁磁性纳米晶粒进行氮化而形成。 然后进行非晶衬底的选择性氧化。 结果是具有高磁化强度的薄而绝缘的软磁膜。 可以制造许多类型的集成电路，其包括使用结合有上述薄膜的膜的部件。
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10.发明授权Process for obtaining a thin, insulating, soft magnetic film of high magnetization 有权用于获得高磁化强度薄的绝缘软磁膜的工艺公开(公告)号：US07504007B2
公开(公告)日：2009-03-17
申请号：US11189028
申请日：2005-07-25
Applicant: Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
Inventor： Guillaume Bouche , Pascal Ancey , Bernard Viala , Sandrine Couderc
CPC classification number: H01F41/301 , B82Y25/00 , B82Y40/00 , H01F10/007 , H01F10/136 , H01F10/138 , H01F10/147 , H01F10/3227 , H01F41/18 , H01F41/302 , H01L23/552 , H01L2924/0002 , Y10T428/256 , H01L2924/00
Abstract: A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.
Abstract translation: 薄的软磁膜将高磁化强度与绝缘特性相结合。 该薄膜通过浸渍在非晶基底中的富铁铁磁性纳米晶粒进行氮化而形成。 然后进行非晶衬底的选择性氧化。 结果是具有高磁化强度的薄而绝缘的软磁膜。 可以制造许多类型的集成电路，其包括使用结合有上述薄膜的膜的部件。
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