公开(公告)号：US20100183827A1

公开(公告)日：2010-07-22

申请号：US12663764

申请日：2008-06-11

申请人： Masaki Hirayama ,  Tadahiro Ohmi ,  Takahiro Horiguchi

发明人： Masaki Hirayama ,  Tadahiro Ohmi ,  Takahiro Horiguchi

IPC分类号： H05H1/46 ,  C23C16/511

CPC分类号： C23C16/511 ,  B05C13/00 ,  H01J37/32192 ,  H01J37/32266 ,  H05H1/46

摘要： A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus 1 includes a metal processing chamber 4 configured to accommodate therein a substrate G to be plasma-processed; an electromagnetic wave source 34 that supplies an electromagnetic wave necessary to excite plasma in the processing chamber 4; one or more dielectric members 25 provided on a bottom surface of a cover 3 of the processing chamber 4 and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source 34 into the inside of the processing chamber 4, a portion of each dielectric member 25 being exposed to the inside of the processing chamber 4; and a surface wave propagating section 51 installed adjacent to the dielectric member 25 and configured to propagate the electromagnetic wave along a metal surface exposed to the inside of the processing chamber 4.

摘要翻译： 提供能够减少电介质部件的使用量的等离子体处理装置。 等离子体处理装置1包括金属处理室4，其配置为在其中容纳待等离子体处理的基板G; 提供在处理室4中激发等离子体所需的电磁波的电磁波源34; 设置在处理室4的盖3的底面上的一个或多个电介质构件25，用于将从电磁波源34提供的电磁波传送到处理室4的内部，每个电介质构件25的一部分 暴露于处理室4的内部; 以及表面波传播部分51，其安装在电介质部件25附近，并被构造成沿着暴露于处理室4的内部的金属表面传播电磁波。

公开(公告)号：US20070221623A1

公开(公告)日：2007-09-27

申请号：US11689180

申请日：2007-03-21

申请人： Takahiro HORIGUCHI ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Takahiro HORIGUCHI ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： B44C1/22 ,  C23C16/00 ,  C23F1/00 ,  H05H1/24

CPC分类号： H01J37/32568 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32211

摘要： There is provided a plasma processing apparatus in which a microwave is propagated into a dielectric body disposed at a top surface of a process chamber through a plurality of slots formed in a bottom face of a rectangular waveguide to excite a predetermined gas supplied into the process chamber into plasma by electric field energy of an electromagnetic field formed on a surface of the dielectric body, to thereby generate plasma with which a substrate is processed, wherein a top face member of the rectangular waveguide is formed of a conductive, nonmagnetic material and is disposed so as to be movable up and down relative to the bottom face of the rectangular waveguide. To change a wavelength in the rectangular waveguide, the top face member of the rectangular waveguide is moved up and down relative to the bottom face of the rectangular waveguide according to conditions of the plasma processing performed in the process chamber, such as gas species, pressure, and a power of the microwave of a microwave supplier.

摘要翻译： 提供了一种等离子体处理装置，其中微波通过形成在矩形波导的底面中的多个槽传播到设置在处理室的顶表面处的电介质体中，以激发供应到处理室中的预定气体 通过形成在电介质体的表面上的电磁场的电场能进入等离子体，从而产生用于处理基板的等离子体，其中矩形波导的顶面部件由导电非磁性材料形成， 以相对于矩形波导的底面上下移动。 为了改变矩形波导中的波长，根据处理室中进行的等离子体处理（例如气体种类，压力）的条件，矩形波导的顶面构件相对于矩形波导的底面上下移动 ，微波炉微波炉的功率。

公开(公告)号：US20100250224A1

公开(公告)日：2010-09-30

申请号：US12640472

申请日：2009-12-17

申请人： Daisuke IGUCHI ,  Takahiro HORIGUCHI

发明人： Daisuke IGUCHI ,  Takahiro HORIGUCHI

IPC分类号： G06F17/50

CPC分类号： G06F17/5036 ,  G06F2217/82

摘要： A power source noise analysis device includes an analysis portion. The analysis portion estimates an internal impedance of a semiconductor chip being an object to be analyzed based on a power current waveform, which is obtained by simulation of the semiconductor chip based on design data of the semiconductor chip. The analysis portion carries out a noise analysis of a power system including a board having the semiconductor chip mounted thereon based on the internal impedance.

摘要翻译： 电源噪声分析装置包括分析部。 分析部基于通过基于半导体芯片的设计数据模拟半导体芯片获得的功率电流波形，来估计作为要分析对象的半导体芯片的内部阻抗。 分析部分基于内部阻抗对包括其上安装有半导体芯片的板的电力系统进行噪声分析。

公开(公告)号：US07771536B2

公开(公告)日：2010-08-10

申请号：US10529191

申请日：2003-09-22

申请人： Takahiro Horiguchi ,  Ryo Kuwajima

发明人： Takahiro Horiguchi ,  Ryo Kuwajima

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67103 ,  C23C16/481

摘要： The substrate processing apparatus according to the present invention is aimed to stably and efficiently perform a deposition process on a substrate W. The substrate processing apparatus supports the substrate W in a position facing a heater portion and thus rotates a holding member holding the substrate W. Furthermore, the heating portion houses a SiC heater and a heat reflecting member in an internal portion of a quartz bell jar made of transparent quartz, and depressurizes an internal space of a processing vessel and an internal space of the quartz bell jar at the same time; thereby allowing the thickness of the quartz bell jar to be thinner, and thus improving thermal conductivity of heat from the SiC heater and preventing contamination by the SiC heater.

摘要翻译： 本发明的基板处理装置的目的在于稳定而有效地对基板W进行沉积处理。基板处理装置将基板W支承在与加热部对置的位置上，从而使保持基板W的保持部件旋转。 此外，加热部在由透明石英制成的石英钟罩的内部容纳SiC加热器和热反射部件，同时对处理容器的内部空间和石英钟罩的内部空间进行减压 ; 从而使石英钟罩的厚度更薄，从而提高来自SiC加热器的热量的导热性并防止SiC加热器的污染。

公开(公告)号：US20070102403A1

公开(公告)日：2007-05-10

申请号：US11592253

申请日：2006-11-03

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Takahiro Horiguchi

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Takahiro Horiguchi

IPC分类号： B23K9/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32229

摘要： The purpose of the present invention is to provide homogeneous plasma in longitudinal direction of a plasma processing apparatus applicable to multiple processes. A microwave waveguide 10 with a plurality of variable couplers 12 is placed in a vacuum chamber 21. The microwave generated in a microwave generator 23 is introduced into the microwave waveguide 10 via a waveguide 24. And a plasma 22 in the chamber 21 is generated by the microwave 25. Intensity distribution of the microwave 25 in the microwave waveguide 10 can be varied by moving a plurality of variable couplers 12 individually upward or downward as shown by two-way arrow.

摘要翻译： 本发明的目的是提供适用于多个工艺的等离子体处理装置的纵向均匀等离子体。 具有多个可变耦合器12的微波波导10被放置在真空室21中。 在微波发生器23中产生的微波通过波导24被引入到微波波导10中。 并且通过微波25产生室21中的等离子体22。 如微波波导10中的微波25的强度分布可以通过单独向上或向下移动多个可变耦合器12来改变，如双向箭头所示。

公开(公告)号：US20060057799A1

公开(公告)日：2006-03-16

申请号：US10529184

申请日：2003-09-22

申请人： Takahiro Horiguchi ,  Ryo Kuwajima

发明人： Takahiro Horiguchi ,  Ryo Kuwajima

IPC分类号： C23C16/00

CPC分类号： H01L21/67115

摘要： A substrate processing apparatus stably and efficiently conducts a film forming process on a substrate to be processed. In the substrate processing apparatus, the substrate to be processed is supported at a position facing a heater portion, and a holding member for holding the substrate is rotated, whereby the temperature distribution of the substrate is kept uniform and a warp of the substrate is suppressed. The inner wall of the processing vessel is covered with a quartz liner which is made of opaque quartz, and thus protected from ultraviolet rays emitted from an ultraviolet light source. The temperature rise of the inner wall caused by heat from the heater portion is suppressed due to the heat insulating effect of the quartz liner. Consequently, the life cycle of the processing vessel can be prolonged.

摘要翻译： 基板处理装置在待处理的基板上稳定且有效地进行成膜处理。 在基板处理装置中，被处理基板被支撑在面向加热部的位置，并且保持基板的保持部件旋转，由此使基板的温度分布保持均匀，抑制基板的翘曲 。 处理容器的内壁由不透明石英制成的石英衬垫覆盖，从而防止紫外光源发出的紫外线。 由于石英衬垫的绝热效果，由加热器部分的热引起的内壁的温度上升被抑制。 因此，可以延长处理容器的生命周期。

公开(公告)号：US06402848B1

公开(公告)日：2002-06-11

申请号：US09549343

申请日：2000-04-13

申请人： Takahiro Horiguchi ,  Wataru Okase ,  Eiichiro Takanabe

发明人： Takahiro Horiguchi ,  Wataru Okase ,  Eiichiro Takanabe

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/4558 ,  H01L21/67017

摘要： In an annealing apparatus for processing semiconductor wafers one by one, a hermetic process chamber has a work table having an upper surface on which a wafer is placed. A shower head is disposed to supply a process gas into the process chamber from a position opposing the upper surface of the work table. An exhaust chamber is connected to the bottom portion of the process chamber through an inlet opening below the work table. The inlet opening has a planar contour smaller than that of the work table. The planar contours of the work table and the opening are arranged almost concentrically with each other. An exhaust mechanism is connected to the exhaust chamber, so the process chamber is exhausted through the exhaust chamber.

摘要翻译： 在一个处理半导体晶片的退火装置中，密封处理室具有工作台，工作台具有放置晶片的上表面。 淋浴头被设置成从与工作台的上表面相对的位置向处理室提供处理气体。 排气室通过工作台下方的入口连接到处理室的底部。 入口开口具有比工作台小的平面轮廓。 工作台和开口的平面轮廓几乎同心地布置。 排气机构连接到排气室，因此处理室通过排气室排出。