公开(公告)号：US20050147926A1

公开(公告)日：2005-07-07

申请号：US10749590

申请日：2004-01-02

申请人： Hsiu-Chun Lee ,  Tse-Yao Huang ,  Yi-Nan Chen ,  Chih-Ta Wang

发明人： Hsiu-Chun Lee ,  Tse-Yao Huang ,  Yi-Nan Chen ,  Chih-Ta Wang

IPC分类号： G03F7/00 ,  G03F7/16 ,  G03F7/36 ,  G03F7/40

CPC分类号： G03F7/168 ,  G03F7/40 ,  G03F7/405

摘要： Disclosed is a method for processing photoresist. The method of the present invention performs Ar plasma process to the photoresist after or before the photoreisist is formed into a pattern to make the photoresist dense.

摘要翻译： 公开了一种处理光致抗蚀剂的方法。 本发明的方法在光电导体形成图案之后或之后对光致抗蚀剂进行Ar等离子体处理以使光致抗蚀剂致密。

公开(公告)号：US20050118531A1

公开(公告)日：2005-06-02

申请号：US10707259

申请日：2003-12-02

申请人： Hsiu-Chun Lee ,  Tse-Yao Huang ,  Yi-Nan Chen

发明人： Hsiu-Chun Lee ,  Tse-Yao Huang ,  Yi-Nan Chen

IPC分类号： G03F7/00 ,  G03F7/36 ,  H01L21/027 ,  H01L21/3213

CPC分类号： H01L21/0274 ,  H01L21/32137 ,  H01L21/32139

摘要： A method for controlling line width critical dimension is disclosed. A semiconductor layer is deposited on a substrate. A cap layer is formed on the semiconductor layer. A patterned photoresist is formed on the cap layer. The patterned photoresist has a top surface and vertical sidewalls. A silicon thin film is selectively sputtered on the top surface and vertical sidewalls of the patterned photoresist, but not on the cap layer. The silicon thin film, which has a thickness: x above the top surface and a thickness: y on the sidewalls of the patterned photoresist, wherein xx

摘要翻译： 公开了一种用于控制线宽临界尺寸的方法。 在衬底上沉积半导体层。 在半导体层上形成覆盖层。 在盖层上形成图案化的光致抗蚀剂。 图案化的光致抗蚀剂具有顶表面和垂直侧壁。 硅薄膜在图案化光致抗蚀剂的顶表面和垂直侧壁上被选择性溅射，但不在盖层上。 硅薄膜的厚度x高于顶表面，图案化光致抗蚀剂的侧壁上的厚度为：y，其中xx <，用于保护图案化的光致抗蚀剂。 使用硅薄膜和图案化的光致抗蚀剂作为蚀刻掩模，封盖层被各向异性蚀刻，从而将光刻胶图案转印到盖层。 最后，使用盖层作为蚀刻掩模，蚀刻半导体层。

公开(公告)号：US20050085025A1

公开(公告)日：2005-04-21

申请号：US10605678

申请日：2003-10-17

申请人： Jin-Tau Huang ,  Chung-Peng Hao ,  Yi-Nan Chen ,  Tse-Yao Huang

发明人： Jin-Tau Huang ,  Chung-Peng Hao ,  Yi-Nan Chen ,  Tse-Yao Huang

IPC分类号： H01L21/28 ,  H01L21/336

CPC分类号： H01L21/28247 ,  H01L21/28061

摘要： A method of forming a gate structure. First, a substrate is provided, and a gate oxide layer, a polysilicon layer, a suicide layer, and a cap layer are consecutively formed onto the substrate. Then, an etching process is performed to etch a portion of the cap layer, the silicide layer, and the polysilicon layer and stop on the polysilicon layer for forming a stacked gate. Thereafter, a portion of the silicide layer exposed on sidewalls of the stacked gate is removed to form a recess. A passivation layer is deposited to fill the recess. The remaining polysilicon layer and the gate oxide layer outside the sidewalls of the stacked gate structure are removed.

摘要翻译： 一种形成栅极结构的方法。 首先，提供基板，并且在基板上连续地形成栅氧化层，多晶硅层，硅化物层和盖层。 然后，进行蚀刻处理以蚀刻覆盖层，硅化物层和多晶硅层的一部分，并停留在多晶硅层上以形成堆叠栅极。 此后，去除暴露在堆叠栅极的侧壁上的硅化物层的一部分以形成凹陷。 沉积钝化层以填充凹部。 除去堆叠栅结构的侧壁外的剩余多晶硅层和栅氧化层。

公开(公告)号：US06790740B2

公开(公告)日：2004-09-14

申请号：US10375485

申请日：2003-02-27

申请人： Tse-Yao Huang ,  Tzu-Ching Tsai ,  Yi-Nan Chen

发明人： Tse-Yao Huang ,  Tzu-Ching Tsai ,  Yi-Nan Chen

IPC分类号： H01L2120

CPC分类号： H01L27/1087 ,  H01L29/66181

摘要： A process for filling a polysilicon seam. First, a semiconducting substrate or an insulating layer having a trench is provided, and a first polysilicon layer having a seam is filled in the trench. Next, the first polysilicon layer is etched to expose the seam. Next, a second polysilicon layer is formed to fill the top portion of the seam and close the seam.

摘要翻译： 一种填充多晶硅接缝的工艺。 首先，提供具有沟槽的半导体衬底或绝缘层，并且在沟槽中填充具有接缝的第一多晶硅层。 接下来，蚀刻第一多晶硅层以暴露接缝。 接下来，形成第二多晶硅层以填充接缝的顶部并闭合接缝。

公开(公告)号：US06303491B1

公开(公告)日：2001-10-16

申请号：US09283984

申请日：1999-04-02

申请人： Tzu-Ching Tsai ,  Lin-Chin Su ,  Jengping Lin ,  Tse Yao Huang

发明人： Tzu-Ching Tsai ,  Lin-Chin Su ,  Jengping Lin ,  Tse Yao Huang

IPC分类号： H01L214763

CPC分类号： H01L21/76897 ,  H01L21/76804 ,  H01L21/76831

摘要： A method for fabricating a self-aligned contact hole in accordance with the present invention is disclosed. First a conductive layer, a silicon oxide layer, and a first silicon nitride layer are formed on a silicon substrate. Next, the first silicon nitride layer, the silicon oxide layer, and the conductive layer are etched to form a trench. Then, a BPSG layer is formed over the first silicon nitride layer. A photoresist layer having an opening is defined. Then, using the photoresist layer as the masking layer, a part of BPSG layer is etched to form a self-aligned hole. Next, the photoresist layer is removed. Afterward, a second silicon nitride layer is formed and etched back to form a spacer.

摘要翻译： 公开了一种用于制造根据本发明的自对准接触孔的方法。 首先，在硅衬底上形成导电层，氧化硅层和第一氮化硅层。 接下来，蚀刻第一氮化硅层，氧化硅层和导电层以形成沟槽。 然后，在第一氮化硅层上形成BPSG层。 定义了具有开口的光刻胶层。 然后，使用光致抗蚀剂层作为掩模层，对BPSG层的一部分进行蚀刻以形成自对准孔。 接下来，去除光致抗蚀剂层。 之后，形成第二氮化硅层并将其回蚀以形成间隔物。

公开(公告)号：US08470515B2

公开(公告)日：2013-06-25

申请号：US13233039

申请日：2011-09-15

申请人： Tse-Yao Huang ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Tse-Yao Huang ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： G03C5/00

CPC分类号： G03F7/094 ,  G03F7/095 ,  G03F7/32 ,  G03F7/38 ,  H01L21/0275 ,  H01L21/0277 ,  H01L21/32139

摘要： A method of forming an etch mask includes: providing a substrate having thereon a material layer to be etched; forming a hard mask layer consisting of a radiation-sensitive, single-layer resist material on the material layer; exposing the hard mask layer to actinic energy to change solvent solubility of exposed regions of the hard mask layer; and subjecting the hard mask layer to water treatment to remove the exposed regions of the hard mask layer, thereby forming a masking pattern consisting of unexposed regions of the hard mask layer.

摘要翻译： 形成蚀刻掩模的方法包括：提供其上具有要蚀刻的材料层的基板; 在材料层上形成由辐射敏感的单层抗蚀剂材料组成的硬掩模层; 将硬掩模层暴露于光化能以改变硬掩模层的暴露区域的溶剂溶解度; 并对硬掩模层进行水处理以除去硬掩模层的暴露区域，从而形成由硬掩模层的未曝光区域构成的掩模图案。

公开(公告)号：US20130043470A1

公开(公告)日：2013-02-21

申请号：US13214227

申请日：2011-08-21

申请人： Tse-Yao Huang ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Tse-Yao Huang ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： H01L23/544 ,  H01L21/762 ,  H01L23/482

CPC分类号： H01L21/76224 ,  H01L23/562 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention in a first aspect proposes a semiconductor structure with a crack stop structure. The semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in the form of a grid to form a crack stop structure.

摘要翻译： 本发明在第一方面提出了一种具有裂纹停止结构的半导体结构。 半导体结构包括矩阵，集成电路和划线。 矩阵包括划线区域和电路区域。 集成电路设置在电路区域内。 划痕线设置在划线区域内并且包括设置在矩阵中并且邻近电路区域的裂缝停止沟槽。 裂缝停止沟槽与电路区域的一侧平行，并填充有格栅形式的复合材料以形成裂纹停止结构。

公开(公告)号：US07115491B2

公开(公告)日：2006-10-03

申请号：US10940707

申请日：2004-09-15

申请人： Tse-Yao Huang ,  Kuo-Chien Wu ,  Yi-Nan Chen

发明人： Tse-Yao Huang ,  Kuo-Chien Wu ,  Yi-Nan Chen

IPC分类号： H01L21/4763

CPC分类号： H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L21/823871 ,  H01L27/105 ,  H01L27/1052

摘要： A method for forming a self-aligned contact on a semiconductor substrate provided with a plurality of field-effect transistors. The method comprises the steps of: forming a thin nitride insulating layer on a gate structure and a diffusion region of the transistor; forming a first insulating layer, which is then planarized to expose the nitride insulating layer on the gate structure; etching through the first insulating layer to form a first part of a contact hole; forming a first part of a contact in said first part of the contact hole; forming a second insulating layer; etching through the second insulating layer to form a second part of the contact hole; and forming a second part of the contact in the second part of the contact hole. The two-stage etching process for forming a conductive contact effectively prevents over-etching and short-circuiting between a wordline and a bitline.

摘要翻译： 一种用于在设置有多个场效应晶体管的半导体衬底上形成自对准接触的方法。 该方法包括以下步骤：在晶体管的栅极结构和扩散区上形成薄的氮化物绝缘层; 形成第一绝缘层，然后将其平坦化以暴露栅极结构上的氮化物绝缘层; 蚀刻穿过第一绝缘层以形成接触孔的第一部分; 在所述接触孔的所述第一部分中形成接触的第一部分; 形成第二绝缘层; 蚀刻穿过第二绝缘层以形成接触孔的第二部分; 以及在接触孔的第二部分中形成接触的第二部分。 用于形成导电触点的两级蚀刻工艺有效地防止了字线和位线之间的过蚀刻和短路。

公开(公告)号：US07105453B2

公开(公告)日：2006-09-12

申请号：US10783467

申请日：2004-02-20

申请人： Yi-Nan Chen ,  Tse-Yao Huang ,  Hui-Min Mao

发明人： Yi-Nan Chen ,  Tse-Yao Huang ,  Hui-Min Mao

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/76844 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76897

摘要： A method of forming contact holes. A substrate on which a plurality of gate structures is formed is provided, wherein the gate structure comprises a gate, a gate capping layer, and a gate spacer. An insulating layer is formed on the gate structures and fills between the gate structures. The insulating layer is etched using the gate capping layers, the gate spacers, and the substrate as stop layers to form first contact holes between the gate structures to expose the substrate and the gate spacers and form second contact holes overlying each gate structure to expose the gate capping layers. A protective spacer is formed over each sidewall of the first contact holes and the second contact holes. The gate capping layer under each gate contact hole is etched using the protective spacer as a stop layer to expose the gate. The protective spacers are removed.

摘要翻译： 一种形成接触孔的方法。 提供形成有多个栅极结构的基板，其中栅极结构包括栅极，栅极覆盖层和栅极间隔物。 在栅极结构上形成绝缘层，并填充在栅极结构之间。 使用栅极覆盖层，栅极间隔物和衬底作为停止层来蚀刻绝缘层，以在栅极结构之间形成第一接触孔，以暴露衬底和栅极间隔物，并形成覆盖每个栅极结构的第二接触孔，以暴露出 门盖层。 在第一接触孔和第二接触孔的每个侧壁上形成保护隔离物。 在每个栅极接触孔下方的栅极覆盖层使用保护隔板作为停止层进行蚀刻，以露出栅极。 去除保护性间隔物。

公开(公告)号：US07005374B2

公开(公告)日：2006-02-28

申请号：US10740680

申请日：2003-12-22

申请人： Tse-Yao Huang ,  Yi-Nan Chen

发明人： Tse-Yao Huang ,  Yi-Nan Chen

IPC分类号： H01L21/4763

CPC分类号： H01L21/31144 ,  H01L21/76802 ,  H01L27/10888 ,  H01L27/10894

摘要： Disclosed is an improved method for forming contact holes. The method of the present invention includes the steps of providing a substrate; forming a plurality of operation layers on the substrate as necessary; forming a poly-silicon layer on the uppermost one of the operation layers; forming an anti-reflective layer on the poly-silicon layer; forming a photoresist layer on the anti-reflective layer to define the positions where the contact holes are to be formed; removing portions of the anti-reflective layer not covered with the photoresist layer; removing the photoresist layer; removing portions of the poly-silicon layer not covered with the anti-reflective layer; and using the residual poly-silicon layer as a mask to etch and form the contact holes. In the step of removing portions of the poly-silicon layer comprises partially removing portions of the poly-silicon not covered with the anti-reflective layer to form recesses, removing the anti-reflective layer, and opening the recesses of the poly-silicon to form openings.

摘要翻译： 公开了一种形成接触孔的改进方法。 本发明的方法包括提供基板的步骤; 根据需要在基板上形成多个操作层; 在最上面的一个操作层上形成多晶硅层; 在所述多晶硅层上形成抗反射层; 在抗反射层上形成光致抗蚀剂层以限定要形成接触孔的位置; 去除未被光致抗蚀剂层覆盖的抗反射层的部分; 去除光致抗蚀剂层; 去除未被抗反射层覆盖的多晶硅层的部分; 并使用剩余的多晶硅层作为掩模来蚀刻和形成接触孔。 在去除多晶硅层的部分的步骤中，包括部分地去除未被抗反射层覆盖的多晶硅的部分以形成凹部，去除抗反射层，并将多晶硅的凹部打开至 形成开口。