中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

31 records (took 0.035 seconds)

    Plasma processing apparatus
    27.
    发明授权
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号：US07537673B2

    公开(公告)日：2009-05-26

    申请号：US11219956

    申请日：2005-09-06

    Applicant: Young Jong Lee ,  Jun Young Choi ,  Hyun Hwan Ahn ,  Chan-Ho Kang ,  Hyun-Woo Baek ,  Young-Joo Hwang

    Inventor： Young Jong Lee ,  Jun Young Choi ,  Hyun Hwan Ahn ,  Chan-Ho Kang ,  Hyun-Woo Baek ,  Young-Joo Hwang

    IPC: H01L21/3065 ,  C23C16/00 ,  C23C16/458 ,  C23C16/50

    CPC classification number: C23C16/4585

    Abstract: Disclosed herein is a plasma processing apparatus, which generates plasma within a vacuum chamber to process semiconductor substrates using the plasma. The apparatus comprises a substrate mounting table, an outer lifting bar, and a baffle. The outer lifting bar comprises a driving shaft, and a substrate supporting member coupled perpendicular to an upper end of the driving shaft. The baffle comprises a baffle plate coupled to the upper end of the driving shaft, and a shielding portion coupled to a lower surface of the baffle plate. The substrate supporting member is a foldable substrate supporting member. The baffle and the substrate supporting member are driven up and down at the same time by the driving shaft. As a result, it is possible to protect the substrate supporting member from plasma, and to prevent interference between the baffle and the outer lifting bar during operation of the plasma processing apparatus.

    Abstract translation: 本文公开了一种等离子体处理装置，其在真空室内产生等离子体以使用等离子体处理半导体衬底。 该装置包括基板安装台，外提升杆和挡板。 外提升杆包括驱动轴和垂直于驱动轴的上端联接的基板支撑构件。 挡板包括耦合到驱动轴的上端的挡板和耦合到挡板的下表面的屏蔽部分。 衬底支撑构件是可折叠衬底支撑构件。 挡板和基板支撑构件通过驱动轴同时上下驱动。 结果，可以在等离子体处理装置的操作期间保护基板支撑构件免受等离子体的影响，并且防止挡板和外部提升杆之间的干扰。

    Semiconductor device utilizing a rugged tungsten film
    29.
    发明授权
    Semiconductor device utilizing a rugged tungsten film 失效
    半导体器件采用坚固的钨膜

    公开(公告)号：US06348708B1

    公开(公告)日：2002-02-19

    申请号：US08675692

    申请日：1996-07-03

    Applicant: Young Jong Lee ,  Bok Won Cho

    Inventor： Young Jong Lee ,  Bok Won Cho

    IPC: H01L21108

    CPC classification number: H01L28/84 ,  Y10S257/915

    Abstract: A DRAM cell capacitor having a high capacitance is obtained by forming a lower capacitor electrode of TiN and a roughened tungsten film on the TiN layer. A high dielectric constant film, such as tantalum pentaoxide, is then provided on the tungsten film and an upper capacitor electrode is deposited on the dielectric film. A method of forming the roughened tungsten film includes the step of depositing tungsten on the TiN layer at a temperature in the range of 200-650° C.

    Abstract translation: 通过在TiN层上形成TiN的下部电容电极和粗糙化的钨膜，可获得高电容的DRAM单元电容器。 然后在钨膜上提供诸如五氧化钽的高介电常数膜，并且在电介质膜上沉积上电容器电极。 形成粗糙化钨膜的方法包括在200-650℃的温度下在TiN层上沉积钨的步骤。

    Capacitor structure having a lower electrode with a rough surface, a plurality of metal layers and a nitridation treated film
    30.
    发明授权
    Capacitor structure having a lower electrode with a rough surface, a plurality of metal layers and a nitridation treated film 失效
    具有具有粗糙表面的下电极，多个金属层和氮化处理膜的电容器结构

    公开(公告)号：US05998824A

    公开(公告)日：1999-12-07

    申请号：US1634

    申请日：1997-12-31

    Applicant: Young Jong Lee

    Inventor： Young Jong Lee

    IPC: H01L21/768 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/04 ,  H01L27/108 ,  H01L29/94

    CPC classification number: H01L27/10852 ,  H01L28/84 ,  Y10S148/138

    Abstract: A capacitor structure of a semiconductor device which includes a semiconductor substrate, a first metal layer formed on the substrate, and a second metal layer formed on the first metal layer. The first metal layer has a nitridation-treated film along its outer surface. A tungsten film having a rugged surface is formed on the entire outer surfaces of the first and second metal layers. Because of the nitridation-treated film along the first layer, the tungsten film will be uniformly distributed along the first and second metals. A thin dielectric film is then formed on the surface of the tungsten, followed by a third metal layer formed on the dielectric film.

    Abstract translation: 一种半导体器件的电容器结构，其包括半导体衬底，形成在衬底上的第一金属层和形成在第一金属层上的第二金属层。 第一金属层沿其外表面具有氮化处理的膜。 在第一和第二金属层的整个外表面上形成具有凹凸表面的钨膜。 由于沿着第一层的氮化处理膜，钨膜将沿着第一和第二金属均匀分布。 然后在钨的表面上形成薄的电介质膜，随后形成在电介质膜上的第三金属层。

Patent Agency Ranking