Abstract:
A semiconductor device which IGBT (Z1) and a control circuit (B1) for driving the IGBT (Z1) are formed on the same semiconductor substrate by using a junction isolation technology, includes an input terminal (P1) for inputting a drive signal of the IGBT (Z1), a Schottky barrier diode (D2) having an anode connected to the input terminal (P1) and a cathode connected to an input terminal (B11) of the control circuit (B1), and a p-channel MOSFET (T1) for shorting both ends of the Schottky barrier diode (D2) when the voltage of the drive signal input to the input terminal (P1) is higher than a predetermined voltage, thereby latch-up of the parasitic element is prevented and a transmission loss of the input signal can be reduced.
Abstract:
In the semiconductor device including a control input terminal, a GND terminal and an output terminal, and also having an IGBT and a control circuit driving the IGBT, a ground resistance and a temperature compensation resistance are connected in series to each other between the control input terminal and the GND terminal. A polysilicon resistance provided on an insulating film formed in a semiconductor substrate in which the IGBT is provided is employed as the ground resistance. A diffusion resistance obtained by injecting an impurity into said semiconductor substrate and performing a diffusion operation is employed as the temperature compensation resistance.
Abstract:
A silicon oxide layer is formed at a surface region of a silicon substrate. Then, an amorphous silicon layer 13 is formed preferably in a thickness of 1 nm or below on the silicon substrate via the silicon oxide layer. Then, the amorphous silicon layer 13 is exposed to a silane gas preferably with heating the silicon substrate within a temperature range of 400-800° C. to form a high density and minute silicon nanocrystal.
Abstract:
A short arc mercury discharge lamp including an arc tube filled with at least mercury and a rare gas, a cathode and an anode positioned opposite to each other within the arc tube, the cathode having an tapered area which tapers in a direction towards the anode and a projection which protrudes from the tapered area in a direction towards the anode. The amount of mercury to be added in the arc tube is in a range of 0.2≦n≦52, where n is the weight (mg/cm3) of the mercury per unit of volume, and a pressure of the rare gas to be added in the arc tube is in a range of 0.1≦p≦800, where p is the pressure (kPa) of the rare gas at an ambient temperature of 25° C.
Abstract translation:一种短弧汞灯放电灯,其包括在电弧管内至少填充有汞和稀有气体的电弧管,阴极和阳极,阴极具有朝向阳极的方向逐渐变细的锥形区域, 从朝向阳极的方向从锥形区域突出的突起。 添加在电弧管中的汞的量在0.2 <= n <52的范围内,其中n是每单位体积的汞的重量(mg / cm 3),以及 添加到电弧管中的稀有气体在0.1 <= p <= 800的范围内,其中p是在25℃的环境温度下稀有气体的压力(kPa)
Abstract:
An inexpensive semiconductor device in which an insulated gate bipolar transistor and a terminal, capable of drawing out a limited current or voltage from a collector of the insulated gate bipolar transistor, are mounted on a semiconductor substrate, and a semiconductor circuit using the same. The semiconductor device comprising an insulated gate bipolar transistor having a gate formed through a gate insulator on an n-type semiconductor layer formed on a p-type semiconductor substrate, and a thyristor, the thyrister comprising a p-type region where a p-type impurity diffuses over a part of the n-type semiconductor layer, an n-type region where an n-type impurity diffuses over a part of the p-type region, an emitter electrode formed contiguously to the n-type region, a base electrode formed contiguously to the p-type region, and a collector electrode which is used in common with the insulated gate bipolar transistor.
Abstract:
An ion current detection device of an internal combustion engine includes a detection voltage generation device which applies a voltage to an ignition plug to generate an ion current in a cylinder of the engine. A current to voltage conversion circuit detects and converts the generated ion current to a voltage signal. A bandpass filter extracts an ac component within a specified frequency range from the voltage signal produced by the current to voltage conversion circuit. An ion current threshold detection portion produces an ion current detection signal when the detected ion current exceeds a predetermined threshold current. A filter characteristic control circuit controls the characteristic of the bandpass filter to suppress the sensitivity of the filter for a predetermined period of time right after the ion current detection signal is detected and, after the predetermined period of time, increase the sensitivity of the filter for detection of the ac signal with the specific frequency.
Abstract:
A counting circuit including destructive memory elements detection circuits for detecting whether the memory elements are broken, and control circuits for controlling the supply of a break current to the memory elements in a plurality of stages. A current feed circuit supplies the break current for breaking the memory elements in the counting circuit every time a to-be-counted write pulse is input. The control circuit in each stage of the counting circuit supplies the break current from the current feed circuit to the memory element of the stage based on a detection result of the detection circuit only when the memory element of the stage is unbroken while the memory element of a stage preceding the memory element is broken. The control circuit of the first stage supplies the break current to the memory element of the first stage when the memory element of the first stage is unbroken.
Abstract:
To correctly sense combusting conditions of an internal combustion engine, an ion current caused by combustion is detected. A combusting condition detecting apparatus for an internal combustion engine comprises a bias voltage generating circuit for applying a bias voltage to an ignition plug provided in a cylinder of the internal combustion engine; an ion current-to-voltage converting circuit for converting an ion current produced in response to the bias voltage into a voltage corresponding to the ion current; a filter circuit for reducing or removing a pulsatory signal upon reception of the voltage signal outputted from the ion current-to-voltage converting circuit; a sensing period setting circuit for defining a predetermined combusting condition sensing period based upon a filter signal outputted from the filter circuit; and an AC component detecting circuit for detecting an AC (alternating current) component in a specific frequency region during the sensing period from the voltage signal derived from the ion current-to-voltage converting circuit.
Abstract:
A waveform shaping circuit shapes a waveform by comparing an output signal generated by an electromagnetic coil in response to a change in an incident magnetic flux to a reference voltage in a comparator. The circuit prevents waveform shaping error due to rapid fluctuations in the output signal. The waveform shaping circuit includes a high-pass filter that removes low-frequency components having frequencies not higher than a cut-off frequency from the output signal of the electromagnetic coil and that has at least two different attenuation characteristics with respective cut-off frequencies, a voltage limiting circuit for switching between the attenuation characteristics of the filter in response to the amplitude of the output signal of the electromagnetic coil by limiting the amplitude of the output signal to a maximum voltage, and a comparator for comparing the filtered output signal with a reference voltage and generating a shaped output signal in response.
Abstract:
A cadmium/inert gas discharge lamp of the short arc type, which suppresses an unnecessary emission upstream and downstream of the necessary emission spectra in a wavelength range of 210 to 230 nm, achieves a high efficiency of the emission spectra in the range 210 to 230 nm and can be used in very satisfactory manner for industrial applications. Also, a highly efficient projection exposure device through the incorporation of a cadmium/rare gas discharge lamp of the short arc type having good emission spectrum characteristics in the wavelength range 210 to 230 nm, which can transmit in projecting manner fine image patterns with a large depth of focus. The cadmium/rare gas discharge lamp of the short arc type is arranged within a temperature-regulated quartz bulb, and is provided with a pair of adjacently facing electrodes, together with inert gas selected from xenon, krypton, argon, neon or mixtures of them. Metal cadmium with a pressure of 14 to 200 kPa is encapsulated in the tube in a stationary lighting operation. The lamp is operated in such a way that J/P, i.e. the ratio between a discharge current in a stationary lighting operation J (A) and a cadmium pressure in a stationary lighting operation P (kPa) is in a range 0.13 to 15. Also, a projection exposure device, which has the above-described discharge lamp and a power supply for carrying out the lighting operation of the discharge lamp under the above-described condtions.