公开(公告)号：US06921958B2

公开(公告)日：2005-07-26

申请号：US10689058

申请日：2003-10-21

Applicant: Yukio Yasuda

Inventor： Yukio Yasuda

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/07 ,  H01L27/088 ,  H01L29/78 ,  H01L31/0328 ,  H03K17/04 ,  H03K17/0812 ,  H01L27/95

CPC classification number: H01L27/0716 ,  H03K17/0406 ,  H03K17/08128

Abstract: A semiconductor device which IGBT (Z1) and a control circuit (B1) for driving the IGBT (Z1) are formed on the same semiconductor substrate by using a junction isolation technology, includes an input terminal (P1) for inputting a drive signal of the IGBT (Z1), a Schottky barrier diode (D2) having an anode connected to the input terminal (P1) and a cathode connected to an input terminal (B11) of the control circuit (B1), and a p-channel MOSFET (T1) for shorting both ends of the Schottky barrier diode (D2) when the voltage of the drive signal input to the input terminal (P1) is higher than a predetermined voltage, thereby latch-up of the parasitic element is prevented and a transmission loss of the input signal can be reduced.

Abstract translation: 通过使用结隔离技术，在同一半导体衬底上形成用于驱动IGBT（Z 1）的IGBT（Z 1）和控制电路（B 1）的半导体装置包括：输入端子（P1） IGBT（Z 1）的驱动信号，具有连接到输入端子（P 1）的阳极的肖特基势垒二极管（D 2）和连接到控制电路（B1）的输入端子（B11）的阴极， 以及当输入到输入端子（P1）的驱动信号的电压高于预定电压时，用于短路肖特基势垒二极管（D 2）两端的p沟道MOSFET（T 1） 防止寄生元件的上升，并且可以减小输入信号的传输损耗。

公开(公告)号：US20050104153A1

公开(公告)日：2005-05-19

申请号：US10853230

申请日：2004-05-26

Applicant: Yukio Yasuda

Inventor： Yukio Yasuda

IPC: H01L27/04 ,  H01L21/822 ,  H01L29/739 ,  H01L29/78 ,  H01L29/8605 ,  H03K17/082 ,  H03K17/56 ,  H01L29/423

CPC classification number: H03K17/0828 ,  H01L29/7395 ,  H01L29/8605

Abstract: In the semiconductor device including a control input terminal, a GND terminal and an output terminal, and also having an IGBT and a control circuit driving the IGBT, a ground resistance and a temperature compensation resistance are connected in series to each other between the control input terminal and the GND terminal. A polysilicon resistance provided on an insulating film formed in a semiconductor substrate in which the IGBT is provided is employed as the ground resistance. A diffusion resistance obtained by injecting an impurity into said semiconductor substrate and performing a diffusion operation is employed as the temperature compensation resistance.

Abstract translation: 在包括控制输入端子，GND端子和输出端子的半导体器件中，并且还具有IGBT和驱动IGBT的控制电路，接地电阻和温度补偿电阻在控制输入端彼此串联连接 端子和GND端子。 在设置有IGBT的半导体衬底中形成的绝缘膜上提供的多晶硅电阻用作接地电阻。 通过将杂质注入所述半导体衬底并进行扩散操作而获得的扩散电阻用作温度补偿电阻。

公开(公告)号：US20050087792A1

公开(公告)日：2005-04-28

申请号：US10925966

申请日：2004-08-26

Applicant: Hiroki Kondo ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai ,  Mitsuo Sakashita ,  Shinya Naito ,  Masaki Satake

Inventor： Hiroki Kondo ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai ,  Mitsuo Sakashita ,  Shinya Naito ,  Masaki Satake

IPC: C01B33/027 ,  C30B1/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8242 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792

CPC classification number: B82Y10/00 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/0262 ,  H01L29/40114 ,  H01L29/42332

Abstract: A silicon oxide layer is formed at a surface region of a silicon substrate. Then, an amorphous silicon layer 13 is formed preferably in a thickness of 1 nm or below on the silicon substrate via the silicon oxide layer. Then, the amorphous silicon layer 13 is exposed to a silane gas preferably with heating the silicon substrate within a temperature range of 400-800° C. to form a high density and minute silicon nanocrystal.

Abstract translation: 在硅衬底的表面区域形成氧化硅层。 然后，通过硅氧化物层，在硅衬底上优选形成1nm以下的非晶硅层13。 然后，非晶硅层13优选在400-800℃的温度范围内加热硅衬底而暴露于硅烷气体，以形成高密度和微小的硅纳米晶体。

公开(公告)号：US06720731B2

公开(公告)日：2004-04-13

申请号：US10229003

申请日：2002-08-28

Applicant: Yukio Yasuda ,  Yoshinoir Aiura

Inventor： Yukio Yasuda ,  Yoshinoir Aiura

IPC: H01J1720

CPC classification number: H01J61/0732 ,  G03F7/70016 ,  H01J61/20 ,  H01J61/86

Abstract: A short arc mercury discharge lamp including an arc tube filled with at least mercury and a rare gas, a cathode and an anode positioned opposite to each other within the arc tube, the cathode having an tapered area which tapers in a direction towards the anode and a projection which protrudes from the tapered area in a direction towards the anode. The amount of mercury to be added in the arc tube is in a range of 0.2≦n≦52, where n is the weight (mg/cm3) of the mercury per unit of volume, and a pressure of the rare gas to be added in the arc tube is in a range of 0.1≦p≦800, where p is the pressure (kPa) of the rare gas at an ambient temperature of 25° C.

Abstract translation: 一种短弧汞灯放电灯，其包括在电弧管内至少填充有汞和稀有气体的电弧管，阴极和阳极，阴极具有朝向阳极的方向逐渐变细的锥形区域， 从朝向阳极的方向从锥形区域突出的突起。 添加在电弧管中的汞的量在0.2 <= n <52的范围内，其中n是每单位体积的汞的重量（mg / cm 3），以及 添加到电弧管中的稀有气体在0.1 <= p <= 800的范围内，其中p是在25℃的环境温度下稀有气体的压力（kPa）

公开(公告)号：US06218709B1

公开(公告)日：2001-04-17

申请号：US09326605

申请日：1999-06-07

Applicant: Yukio Yasuda

Inventor： Yukio Yasuda

IPC: H01L2976

CPC classification number: H01L29/7395 ,  H01L29/7404

Abstract: An inexpensive semiconductor device in which an insulated gate bipolar transistor and a terminal, capable of drawing out a limited current or voltage from a collector of the insulated gate bipolar transistor, are mounted on a semiconductor substrate, and a semiconductor circuit using the same. The semiconductor device comprising an insulated gate bipolar transistor having a gate formed through a gate insulator on an n-type semiconductor layer formed on a p-type semiconductor substrate, and a thyristor, the thyrister comprising a p-type region where a p-type impurity diffuses over a part of the n-type semiconductor layer, an n-type region where an n-type impurity diffuses over a part of the p-type region, an emitter electrode formed contiguously to the n-type region, a base electrode formed contiguously to the p-type region, and a collector electrode which is used in common with the insulated gate bipolar transistor.

Abstract translation: 一种廉价的半导体器件，其中能够从绝缘栅双极晶体管的集电极引出有限的电流或电压的绝缘栅双极晶体管和端子安装在半导体衬底上，并使用该半导体器件的半导体电路。 半导体器件包括绝缘栅双极晶体管，其具有通过形成在p型半导体衬底上的n型半导体层上的栅极绝缘体形成的栅极，以及晶闸管，所述可控硅包括p型区域，其中p型杂质 扩散到n型半导体层的一部分上，n型杂质在p型区域的一部分扩散的n型区域，与n型区域连续形成的发射极，形成的基极 邻接于p型区域，以及与绝缘栅双极晶体管共同使用的集电极。

公开(公告)号：US6011397A

公开(公告)日：2000-01-04

申请号：US892195

申请日：1997-07-14

Applicant: Yukio Yasuda

Inventor： Yukio Yasuda

IPC: G01M15/04 ,  F02P17/12 ,  F02P17/00

CPC classification number: F02P17/12

Abstract: An ion current detection device of an internal combustion engine includes a detection voltage generation device which applies a voltage to an ignition plug to generate an ion current in a cylinder of the engine. A current to voltage conversion circuit detects and converts the generated ion current to a voltage signal. A bandpass filter extracts an ac component within a specified frequency range from the voltage signal produced by the current to voltage conversion circuit. An ion current threshold detection portion produces an ion current detection signal when the detected ion current exceeds a predetermined threshold current. A filter characteristic control circuit controls the characteristic of the bandpass filter to suppress the sensitivity of the filter for a predetermined period of time right after the ion current detection signal is detected and, after the predetermined period of time, increase the sensitivity of the filter for detection of the ac signal with the specific frequency.

Abstract translation: 内燃机的离子电流检测装置具备检测电压产生装置，该检测电压产生装置向火花塞施加电压，以在发动机的气缸中产生离子电流。 电流 - 电压转换电路检测并将产生的离子电流转换成电压信号。 带通滤波器从由电流到电压转换电路产生的电压信号中提取在指定频率范围内的交流分量。 当检测到的离子电流超过预定阈值电流时，离子电流阈值检测部分产生离子电流检测信号。 滤波器特性控制电路控制带通滤波器的特性，以在检测到离子电流检测信号之后抑制滤波器的预定时间段的灵敏度，并且在预定时间段之后，增加滤波器的灵敏度 检测具有特定频率的交流信号。

公开(公告)号：US5699398A

公开(公告)日：1997-12-16

申请号：US675259

申请日：1996-07-03

Applicant: Yukio Yasuda

Inventor： Yukio Yasuda

IPC: H03K21/00 ,  H03K21/40 ,  H03K23/00 ,  H03K25/00

CPC classification number: H03K21/403

Abstract: A counting circuit including destructive memory elements detection circuits for detecting whether the memory elements are broken, and control circuits for controlling the supply of a break current to the memory elements in a plurality of stages. A current feed circuit supplies the break current for breaking the memory elements in the counting circuit every time a to-be-counted write pulse is input. The control circuit in each stage of the counting circuit supplies the break current from the current feed circuit to the memory element of the stage based on a detection result of the detection circuit only when the memory element of the stage is unbroken while the memory element of a stage preceding the memory element is broken. The control circuit of the first stage supplies the break current to the memory element of the first stage when the memory element of the first stage is unbroken.

Abstract translation: 一种计数电路，包括用于检测存储元件是否断开的破坏性存储元件检测电路，以及用于控制在多级中向存储元件提供断路电流的控制电路。 每当输入要计数的写入脉冲时，电流馈送电路提供用于断开计数电路中的存储元件的断开电流。 计数电路的每个级中的控制电路只有当级的存储元件不间断时，才基于检测电路的检测结果，将来自电流馈电电路的断开电流提供到级的存储元件，而存储元件 存储元件之前的一个阶段被破坏。 当第一级的存储元件不间断时，第一级的控制电路将断开电流提供给第一级的存储元件。

公开(公告)号：US5675072A

公开(公告)日：1997-10-07

申请号：US579670

申请日：1995-12-28

Applicant: Yukio Yasuda ,  Wataru Fukui ,  Yasuhiro Takahashi

Inventor： Yukio Yasuda ,  Wataru Fukui ,  Yasuhiro Takahashi

IPC: G01M15/04 ,  F02P17/12 ,  G01L23/22 ,  G01M15/12 ,  G01M15/00

CPC classification number: G01L23/22 ,  G01M15/12 ,  F02P2017/125 ,  F02P2017/128

Abstract: To correctly sense combusting conditions of an internal combustion engine, an ion current caused by combustion is detected. A combusting condition detecting apparatus for an internal combustion engine comprises a bias voltage generating circuit for applying a bias voltage to an ignition plug provided in a cylinder of the internal combustion engine; an ion current-to-voltage converting circuit for converting an ion current produced in response to the bias voltage into a voltage corresponding to the ion current; a filter circuit for reducing or removing a pulsatory signal upon reception of the voltage signal outputted from the ion current-to-voltage converting circuit; a sensing period setting circuit for defining a predetermined combusting condition sensing period based upon a filter signal outputted from the filter circuit; and an AC component detecting circuit for detecting an AC (alternating current) component in a specific frequency region during the sensing period from the voltage signal derived from the ion current-to-voltage converting circuit.

Abstract translation: 为了正确地识别内燃机的燃烧条件，检测由燃烧引起的离子电流。 一种用于内燃机的燃烧条件检测装置，包括偏置电压产生电路，用于向设置在内燃机的气缸中的火花塞施加偏置电压; 用于将根据所述偏置电压产生的离子电流转换成对应于所述离子电流的电压的离子电流 - 电压转换电路; 滤波电路，用于在接收从离子电流 - 电压转换电路输出的电压信号时减少或去除脉动信号; 感测周期设定电路，用于基于从滤波电路输出的滤波信号来定义预定的燃烧条件检测周期; 以及AC分量检测电路，用于根据从离子电流 - 电压转换电路得到的电压信号在感测期间检测特定频率区域中的交流（交流）分量。

公开(公告)号：US5548242A

公开(公告)日：1996-08-20

申请号：US224885

申请日：1994-04-08

Applicant: Yukio Yasuda ,  Yutaka Ohashi

Inventor： Yukio Yasuda ,  Yutaka Ohashi

IPC: F02D45/00 ,  F02P7/077 ,  G01D5/245 ,  G01P3/481 ,  H03H11/04 ,  H03K5/08 ,  H03K5/00 ,  H04B1/10

CPC classification number: H03K5/08

Abstract: A waveform shaping circuit shapes a waveform by comparing an output signal generated by an electromagnetic coil in response to a change in an incident magnetic flux to a reference voltage in a comparator. The circuit prevents waveform shaping error due to rapid fluctuations in the output signal. The waveform shaping circuit includes a high-pass filter that removes low-frequency components having frequencies not higher than a cut-off frequency from the output signal of the electromagnetic coil and that has at least two different attenuation characteristics with respective cut-off frequencies, a voltage limiting circuit for switching between the attenuation characteristics of the filter in response to the amplitude of the output signal of the electromagnetic coil by limiting the amplitude of the output signal to a maximum voltage, and a comparator for comparing the filtered output signal with a reference voltage and generating a shaped output signal in response.

Abstract translation: 波形整形电路通过将比较由电磁线圈产生的输出信号与入射磁通量的变化相对应的比较器中的参考电压进行比较，来形成波形。 该电路防止由于输出信号的快速波动引起的波形整形误差。 波形整形电路包括高通滤波器，其从电磁线圈的输出信号去除具有不高于截止频率的频率的低频分量，并且具有至少两个具有相应截止频率的不同衰减特性， 电压限制电路，用于通过将输出信号的幅度限制为最大电压来响应于电磁线圈的输出信号的幅度来切换滤波器的衰减特性;以及比较器，用于将滤波的输出信号与 参考电压并响应于产生成形的输出信号。

公开(公告)号：US5471278A

公开(公告)日：1995-11-28

申请号：US154404

申请日：1993-11-19

Applicant: Yukio Yasuda ,  Akiyasu Yamaguchi ,  Tatsushi Igarashi ,  Yasuo Oonishi ,  Kenzo Kai ,  Masanori Sugihara ,  Takashi Mori ,  Akira Miyaji

Inventor： Yukio Yasuda ,  Akiyasu Yamaguchi ,  Tatsushi Igarashi ,  Yasuo Oonishi ,  Kenzo Kai ,  Masanori Sugihara ,  Takashi Mori ,  Akira Miyaji

IPC: G03F7/20 ,  H01J61/16 ,  H01J61/18 ,  H01J61/86

CPC classification number: G03F7/70016 ,  H01J61/18 ,  H01J61/86

Abstract: A cadmium/inert gas discharge lamp of the short arc type, which suppresses an unnecessary emission upstream and downstream of the necessary emission spectra in a wavelength range of 210 to 230 nm, achieves a high efficiency of the emission spectra in the range 210 to 230 nm and can be used in very satisfactory manner for industrial applications. Also, a highly efficient projection exposure device through the incorporation of a cadmium/rare gas discharge lamp of the short arc type having good emission spectrum characteristics in the wavelength range 210 to 230 nm, which can transmit in projecting manner fine image patterns with a large depth of focus. The cadmium/rare gas discharge lamp of the short arc type is arranged within a temperature-regulated quartz bulb, and is provided with a pair of adjacently facing electrodes, together with inert gas selected from xenon, krypton, argon, neon or mixtures of them. Metal cadmium with a pressure of 14 to 200 kPa is encapsulated in the tube in a stationary lighting operation. The lamp is operated in such a way that J/P, i.e. the ratio between a discharge current in a stationary lighting operation J (A) and a cadmium pressure in a stationary lighting operation P (kPa) is in a range 0.13 to 15. Also, a projection exposure device, which has the above-described discharge lamp and a power supply for carrying out the lighting operation of the discharge lamp under the above-described condtions.

Abstract translation: 短波型的镉/惰性气体放电灯在210〜230nm的波长范围内抑制必要的发射光谱的上游和下游的不必要的发光，实现了210〜230的发射光谱的高效率 nm，可以以非常满意的方式用于工业应用。 另外，通过并入具有210〜230nm的波长范围内的发射光谱特性良好的短弧型镉/稀有气体放电灯的高效投影曝光装置，能以突出的方式突出显示具有大的图像的精细图像图案 焦点深度。 短弧型的镉/稀有气体放电灯布置在温度调节的石英灯泡内，并且设置有一对相邻的电极以及选自氙气，氪气，氩气，氖气或它们的混合物的惰性气体 。 压力为14至200kPa的金属镉在静止照明操作中封装在管中。 灯的操作方式是J / P，即静止点亮操作J（A）中的放电电流与静止点亮操作P（k​​Pa）中的镉压力之比在0.13至15的范围内。 此外，具有上述放电灯的投影曝光装置和用于在上述条件下进行放电灯的点亮操作的电源。