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    Image Sensor with Buried Light Shield and Vertical Gate
    21.
    发明申请
    Image Sensor with Buried Light Shield and Vertical Gate 有权
    图像传感器与埋地屏蔽和垂直门

    公开(公告)号：US20150035028A1

    公开(公告)日：2015-02-05

    申请号：US13959362

    申请日：2013-08-05

    Applicant: Apple Inc.

    Inventor： Xiaofeng Fan ,  Philip H. Li ,  Chung Chun Wan ,  Anup K. Sharma ,  Xiangli Li

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685

    Abstract: A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.

    Abstract translation: 图像传感器中的像素可以包括设置在一个基板中的光电检测器和存储区域，或者设置在一个基板中的光电检测器和另一个基板中的存储区域。 掩埋的光屏蔽设置在光电检测器和存储区之间。 诸如浮动扩散的感测区域可以与存储区域相邻，其中掩埋的光屏蔽件设置在光电检测器和存储和感测区域之间。 当光电检测器和存储区域设置在分离的基板中时，可以通过掩埋的光屏蔽形成垂直栅极，并且用于开始从光电检测器和存储区域传输电荷。 形成在垂直栅极附近或周围的转移通道提供用于电荷从光电检测器转移到存储区域的通道。

    Creating arbitrary patterns on a 2-D uniform grid VCSEL array
    24.
    发明授权
    Creating arbitrary patterns on a 2-D uniform grid VCSEL array 有权

    公开(公告)号：US10700493B2

    公开(公告)日：2020-06-30

    申请号：US16524313

    申请日：2019-07-29

    Applicant: APPLE INC.

    Inventor： Chin Han Lin ,  Weiping Li ,  Xiaofeng Fan

    IPC: H01S5/183 ,  H01L29/15 ,  H01S5/187 ,  H01S5/42 ,  H01S5/042 ,  H01S5/20 ,  H01S5/026

    Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

    Image Sensor Having Full Well Capacity Beyond Photodiode Capacity
    25.
    发明申请
    Image Sensor Having Full Well Capacity Beyond Photodiode Capacity 审中-公开

    公开(公告)号：US20180278869A1

    公开(公告)日：2018-09-27

    申请号：US15992484

    申请日：2018-05-30

    Applicant: Apple Inc.

    Inventor： Xiaofeng Fan

    IPC: H04N5/369 ,  H01L27/146 ,  H04N9/04

    Abstract: A vertically stacked image sensor having a photodiode chip and a transistor array chip. The photodiode chip includes at least one photodiode and a transfer gate extends vertically from a top surface of the photodiode chip. The image sensor further includes a transistor array chip stacked on top of the photodiode chip. The transistor array chip includes the control circuitry and storage nodes. The image sensor further includes a logic chip vertically stacked on the transistor array chip. The transfer gate communicates data from the at least one photodiode to the transistor array chip and the logic chip selectively activates the vertical transfer gate, the reset gate, the source follower gate, and the row select gate.

    VCSEL STRUCTURE WITH EMBEDDED HEAT SINK
    30.
    发明申请
    VCSEL STRUCTURE WITH EMBEDDED HEAT SINK 有权
    VCSEL结构与嵌入式散热器

    公开(公告)号：US20170025815A1

    公开(公告)日：2017-01-26

    申请号：US15011562

    申请日：2016-01-31

    Applicant: APPLE INC.

    Inventor： Tongbi T. Jiang ,  Weiping Li ,  Xiaofeng Fan

    IPC: H01S5/024 ,  H01S5/42 ,  H01S5/042 ,  H01S5/183

    CPC classification number: H01S5/02469 ,  H01S5/0207 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/423

    Abstract: An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.

    Abstract translation: 光电子器件包括半导体衬底，其具有正面和背面，并且具有至少一个从背面穿过半导体衬底延伸到与前侧接近的腔。 至少一个光电子发射器形成在半导体衬底的与该至少一个腔相邻的正面上。 导热材料至少部分地填充至少一个空腔，并被配置为用作至少一个光电发射器的散热器。

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