公开(公告)号：US20200071825A1

公开(公告)日：2020-03-05

申请号：US16550523

申请日：2019-08-26

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Mark Saly ,  David Thompson ,  Yongjing Lin ,  Shih Chung Chen

IPC: C23C16/455 ,  C23C16/32 ,  C23C28/00

Abstract: Methods of depositing a metal carbide film by exposing a substrate surface to a halide precursor and an aluminum reactant are described. The halide precursor comprises a compound of general formula (I) MXyRn, wherein M is a metal, X is a halogen selected from Cl, Br, F or I, y is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and n is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) Al(CH2AR1R2R3)3, wherein A is C, Si, or Ge, each of R1, R2, and R3 is independently alkyl or comprises substantially no β-hydrogen.

公开(公告)号：US11888045B2

公开(公告)日：2024-01-30

申请号：US17557787

申请日：2021-12-21

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M Bernal Ramos ,  Luping Li ,  Shih Chung Chen ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Steven C. H. Hung ,  Srinivas Gandikota ,  Naomi Yoshida ,  Lin Dong

IPC: H01L29/51 ,  H01L29/40 ,  H01L29/49

CPC classification number: H01L29/513 ,  H01L29/401 ,  H01L29/4958 ,  H01L29/4966

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

公开(公告)号：US20220165854A1

公开(公告)日：2022-05-26

申请号：US17668992

申请日：2022-02-10

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M. Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C.H. Hung ,  Srinivas Gandikota

IPC: H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-K dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAIN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAIC).

公开(公告)号：US20220115516A1

公开(公告)日：2022-04-14

申请号：US17557787

申请日：2021-12-21

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M. Bernal Ramos ,  Luping Li ,  Shih Chung Chen ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Steven C.H. Hung ,  Srinivas Gandikota ,  Naomi Yoshida ,  Lin Dong

IPC: H01L29/51 ,  H01L29/40 ,  H01L29/49

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

公开(公告)号：US11171047B2

公开(公告)日：2021-11-09

申请号：US16914414

申请日：2020-06-28

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Srinivas Gandikota ,  Steven C. H. Hung ,  Jacqueline S. Wrench ,  Yongjing Lin ,  Susmit Singha Roy ,  Wei V. Tang ,  Shih Chung Chen

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/02

Abstract: Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.

公开(公告)号：US11101128B1

公开(公告)日：2021-08-24

申请号：US16817378

申请日：2020-03-12

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei Liu ,  Yuan-hui Lo ,  Srinivas Gandikota ,  Jacqueline Samantha Wrench ,  Yongjing Lin ,  Wen Ting Chen ,  ShihChung Chen

IPC: H01L21/02

Abstract: The present disclosure provides methods for treating film layers in a substrate including positioning the substrate in a processing volume of a processing chamber. The substrate can have high aspect ratio features extending a depth from a substrate surface to a bottom surface. The feature can have a width defined by a first sidewall and a second sidewall. A film with a composition that includes metal is formed on the substrate surface and the first sidewall, the second sidewall, and the bottom surface of each feature. The film in the feature can have a seam extending substantially parallel to the first and second sidewalls. The film is annealed and exposed to an oxygen radical while converting the metal of the film to a metal oxide. The metal oxide is exposed to a hydrogen radical while converting the metal oxide to a metal fill layer.

公开(公告)号：US20200373404A1

公开(公告)日：2020-11-26

申请号：US16876276

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M. Bernal Ramos ,  Luping Li ,  Shih Chung Chen ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Steven C.H. Hung ,  Srinivas Gandikota ,  Naomi Yoshida ,  Lin Dong

IPC: H01L29/51 ,  H01L29/40

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

公开(公告)号：US20200373318A1

公开(公告)日：2020-11-26

申请号：US16876280

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Jacqueline S. Wrench ,  Yixiong Yang ,  Yong Wu ,  Wei V. Tang ,  Srinivas Gandikota ,  Yongjing Lin ,  Karla M. Barnal Ramos ,  Shih Chung Chen

IPC: H01L27/11556 ,  H01L21/285 ,  H01L21/67 ,  H01L21/28 ,  H01L29/423 ,  H01L21/311 ,  C23C16/50 ,  C23C16/455 ,  C23C16/06

Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).