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公开(公告)号：US10670973B2
公开(公告)日：2020-06-02
申请号：US15573832
申请日：2016-04-29
Applicant: ASML Netherlands B.V.
Inventor： Yi Zou , Jing Su , Robert John Socha , Christopher Alan Spence , Duan-Fu Stephen Hsu
Abstract: A method includes obtaining a sub-layout having an area that is a performance limiting spot, adjusting colors of patterns in the area, and determining whether the area is still a performance limiting spot. Another method includes decomposing patterns in a design layout into multiple sub-layouts; determining for at least one area in one of the sub-layouts, the likelihood of that a figure of merit is beyond its allowed range; and if the likelihood is above a threshold, that one sub-layout has a performance limiting spot. Another method includes: obtaining a design layout having a first group of patterns and a second group of patterns, wherein colors of the first group of patterns are not allowed to change and colors of the second group of patterns are allowed to change; and co-optimizing at least the first group of patterns, the second group of patterns and an illumination of a lithographic apparatus.
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公开(公告)号：US10310386B2
公开(公告)日：2019-06-04
申请号：US15325428
申请日：2015-06-29
Applicant: ASML Netherlands B.V.
Inventor： Duan-Fu Stephen Hsu , Feng-Liang Liu
Abstract: Methods of reducing a pattern displacement error, contrast loss, best focus shift, and/or tilt of a Bossung curve of a portion of a design layout used in a lithographic process for imaging that portion onto a substrate using a lithographic apparatus. The methods include adjusting an illumination source of the lithographic apparatus, placing one or more assist features onto, or adjusting a position and/or shape of one or more existing assist features in, the portion. Adjusting the illumination source and/or the one or more assist features may be by an optimization algorithm.
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公开(公告)号：US11892776B2
公开(公告)日：2024-02-06
申请号：US17415101
申请日：2019-12-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Johannes Jacobus Matheus Baselmans , Duan-Fu Stephen Hsu , Willem Jan Bouman , Frank Jan Timmermans , Marie-claire Van Lare
IPC: G03F7/00
CPC classification number: G03F7/70308
Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.
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公开(公告)号：US11480882B2
公开(公告)日：2022-10-25
申请号：US17479202
申请日：2021-09-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Duan-Fu Stephen Hsu
Abstract: A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.
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公开(公告)号：US11054750B2
公开(公告)日：2021-07-06
申请号：US15023330
申请日：2014-09-11
Applicant: ASML Netherlands B.V.
Inventor： Duan-Fu Stephen Hsu , Rafael C. Howell , Feng-Liang Liu
IPC: G03F7/20
Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illuminator and projection optics, the method including: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination produced by the illuminator and of the design layout, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate, or a three-dimensional radiation field projected from the projection optics, or both; and reconfiguring one or more characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied.
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Patent Agency Ranking
公开(公告)号：US11022894B2
公开(公告)日：2021-06-01
申请号：US16440485
申请日：2019-06-13
Applicant: ASML Netherlands B.V.
Inventor： Duan-Fu Stephen Hsu , Kurt E. Wampler
Abstract: Several methods of reducing one or more pattern displacement errors, contrast loss, best focus shift, tilt of a Bossung curve of a portion of a design layout used in a patterning process for imaging that portion onto a substrate using a lithographic apparatus. The methods include determining or adjusting one or more characteristics of one or more assist features using the one or more rules based on one or more parameters selected from a group consisting of: one or more characteristics of one or more design features in the portion, one or more characteristics of the patterning process, one or more characteristics of the lithographic apparatus, and/or a combination selected from the foregoing.
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公开(公告)号：US10955755B2
公开(公告)日：2021-03-23
申请号：US16428373
申请日：2019-05-31
Applicant: ASML Netherlands B.V.
Inventor： Duan-Fu Stephen Hsu , Feng-Liang Liu
IPC: G06F30/30 , G03F7/20 , G03F1/70 , G06F30/398 , G03F1/36
Abstract: Disclosed herein are several methods of reducing one or more pattern displacement errors, contrast loss, best focus shift , tilt of a Bossung curve of a portion of a design layout used in a lithographic process for imaging that portion onto a substrate using a lithographic apparatus. The methods include adjusting an illumination source of the lithographic apparatus, placing assist features onto or adjusting positions and/or shapes existing assist features in the portion. Adjusting the illumination source and/or the assist features may be by an optimization algorithm.
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公开(公告)号：US10796063B2
公开(公告)日：2020-10-06
申请号：US16093401
申请日：2017-04-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Duan-Fu Stephen Hsu , Jingjing Liu
Abstract: A method including obtaining at least a clip of a design layout, and determining a representation of the clip on a patterning device, under a condition that a reduction ratio from the representation to the clip is anisotropic. A method including obtaining a relationship between a first geometric characteristic in a design layout or an image thereof, and a second geometric characteristic in a representation of the design layout on a patterning device, wherein the relationship is a function involving reduction ratios in two different directions.
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公开(公告)号：US10509310B2
公开(公告)日：2019-12-17
申请号：US15561907
申请日：2016-03-08
Applicant: ASML Netherlands B.V.
Abstract: A patterning device carries a pattern of features to be transferred onto a substrate using a lithographic apparatus. The patterning device is free of light absorber material, at least in an area. The pattern of features in the area may include a dense array of lines, trenches, dots or holes. Individual lines, holes, etc. are defined in at least one direction by pairs of edges between regions of different phase in the patterning device. A distance between the pair of edges in the at least one direction is at least 15% smaller than a size of the individual feature to be formed on the substrate once adjusted by a magnification factor, if any, of the lithographic apparatus. The patterning device may be adapted for use in EUV lithography. The patterning device may be adapted for use in a negative tone resist and development process.
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公开(公告)号：US10459346B2
公开(公告)日：2019-10-29
申请号：US16036732
申请日：2018-07-16
Applicant: ASML Netherlands B.V.
Inventor： Duan-Fu Stephen Hsu , Rafael C. Howell , Xiaofeng Liu
Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.
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