公开(公告)号：US20240004299A1

公开(公告)日：2024-01-04

申请号：US18233263

申请日：2023-08-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Mark John MASLOW ,  Frank STAALS ,  Paul Christiaan HINNEN

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/2043 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/705 ,  G03F7/70616 ,  H01L22/20

Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.

公开(公告)号：US20210255552A1

公开(公告)日：2021-08-19

申请号：US17241142

申请日：2021-04-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Joannes Jitse VENSELAAR ,  Anagnostis TSIATMAS ,  Samee Ur REHMAN ,  Paul Christiaan HINNEN ,  Jean-Pierre Agnes Henricus Marie VAESSEN ,  Nicolas Mauricio WEISS ,  Gonzalo Roberto SANGUINETTI ,  Thomai ZACHAROPOULOU ,  Martijn Maria ZAAL

IPC: G03F7/20 ,  G06F17/12

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

公开(公告)号：US20210035871A1

公开(公告)日：2021-02-04

申请号：US17072391

申请日：2020-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan VAN LEEST ,  Anagnostis TSIATMAS ,  Paul Christiaan HINNEN ,  Elliott Gerard Mc NAMARA ,  Alok VERMA ,  Thomas THEEUWES ,  Hugo Augustinus Joseph CRAMER ,  Maria Isabel DE LA FUENTE VALENTIN ,  Koen VAN WITTEVEEN ,  Martijn Maria ZAAL ,  Shu-jin WANG

IPC: H01L21/66 ,  G03F7/20 ,  G03F9/00 ,  G01N21/95

Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.

公开(公告)号：US20200185281A1

公开(公告)日：2020-06-11

申请号：US16790809

申请日：2020-02-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan VAN LEEST ,  Anagnostis TSIATMAS ,  Paul Christiaan HINNEN ,  Elliott Gerard MC NAMARA ,  Alok VERMA ,  Thomas THEEUWES ,  Hugo Augustinus Joseph CRAMER

IPC: H01L21/66 ,  G01N21/95 ,  G03F9/00 ,  G03F7/20

Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.

公开(公告)号：US20190196334A1

公开(公告)日：2019-06-27

申请号：US16327363

申请日：2017-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Mark John MASLOW ,  Frank STAALS ,  Paul Christiaan HINNEN

IPC: G03F7/20

Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.

公开(公告)号：US20190086810A1

公开(公告)日：2019-03-21

申请号：US16075696

申请日：2017-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Frank STAALS ,  Mark John MASLOW ,  Roy ANUNCIADO ,  Marinus JOCHEMSEN ,  Hugo Augustinus Joseph CRAMER ,  Thomas THEEUWES ,  Paul Christiaan HINNEN

IPC: G03F7/20

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

公开(公告)号：US20170176870A1

公开(公告)日：2017-06-22

申请号：US15384084

申请日：2016-12-19

Applicant: ASML Netherlands B.V.

Inventor： Paul Christiaan HINNEN ,  Simon Gijsbert Josephus MATHIJSSEN ,  Maikel Robert GOOSEN ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/702 ,  G03F7/70641 ,  G03F7/70683 ,  G03F7/7085

Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.