-
1.发明申请公开(公告)号：US20220375063A1
公开(公告)日：2022-11-24
申请号：US17761578
申请日：2020-09-14
Applicant: ASML Netherlands B.V.
Inventor： Maxim PISARENCO , Scott Anderson MIDDLEBROOKS , Mark John MASLOW , Marie-Claire VAN LARE , Chrysostomos BATISTAKIS
Abstract: A system and method for generating predictive images for wafer inspection using machine learning are provided. Some embodiments of the system and method include acquiring the wafer after a photoresist applied to the wafer has been developed; imaging a portion of a segment of the developed wafer; acquiring the wafer after the wafer has been etched; imaging the segment of the etched wafer; training a machine learning model using the imaged portion of the developed wafer and the imaged segment of the etched wafer; and applying the trained machine learning model using the imaged segment of the etched wafer to generate predictive images of a developed wafer. Some embodiments include imaging a segment of the developed wafer; imaging a portion of the segment of the etched wafer; training a machine learning model; and applying the trained machine learning model to generate predictive after-etch images of the developed wafer.
-
公开(公告)号：US20210149312A1
公开(公告)日：2021-05-20
申请号：US16644206
申请日：2018-08-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Mark John MASLOW , Koenraad VAN INGEN SCHENAU , Patrick WARNAAR , Abraham SLACHTER , Roy ANUNCIADO , Simon Hendrik Celine VAN GORP , Frank STAALS , Marinus JOCHEMSEN
Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.
-
公开(公告)号：US20190214318A1
公开(公告)日：2019-07-11
申请号：US16328319
申请日：2017-08-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Mark John MASLOW , Johannes Catharinus Hubertus MULKENS , Peter TEN BERGE , Franciscus VAN DE MAST , Jan-Willem GEMMINK , Liesbeth REIJNEN
IPC: H01L21/66 , G03F7/36 , G03F7/20 , H01L21/311 , H01L21/67
CPC classification number: H01L22/20 , G03F7/36 , G03F7/70616 , G03F7/70683 , H01L21/31105 , H01L21/31144 , H01L21/67253
Abstract: A substrate, including a substrate layer; and an etchable layer on the substrate layer, the etchable layer including a patterned region thereon or therein and including a blank region of sufficient size to enable a bulk etch rate of an etch tool for etching the blank region to be determined.
-
公开(公告)号：US20180224752A1
公开(公告)日：2018-08-09
申请号：US15579938
申请日：2016-05-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Frank STAALS , Mark John MASLOW
IPC: G03F7/20
CPC classification number: G03F7/70533 , G03F7/70525 , G03F7/70891 , H01L21/0274
Abstract: A method for adjusting a lithography process, wherein processing parameters of the lithography process include a first group of processing parameters and a second group of processing parameters, the method including: obtaining a change of the second group of processing parameters; determining a change of a sub- process window (sub-PW) as a result of the change of the second group of processing parameters, wherein the sub-PW is spanned by only the first group of processing parameters; and adjusting the first group of processing parameters based on the change of the sub-PW.
-
公开(公告)号：US20240111218A1
公开(公告)日：2024-04-04
申请号：US18387082
申请日：2023-11-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Hermanus Adrianus DILLEN , Marc Jurian KEA , Mark John MASLOW , Koen THUIJS , Peter David ENGBLOM , Ralph Timotheus HUIJGEN , Daan Maurits SLOTBOOM , Johannes Catharinus Hubertus MULKENS
IPC: G03F7/00
CPC classification number: G03F7/705 , G03F7/70525 , G03F7/7065 , G03F7/70658
Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.
-
Patent Agency Ranking
公开(公告)号：US20240012337A1
公开(公告)日：2024-01-11
申请号：US18229984
申请日：2023-08-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Mark John MASLOW , Koenraad VAN INGEN SCHENAU , Patrick WARNAAR , Abraham SLACHTER , Roy ANUNCIADO , Simon Hendrik Celine VAN GORP , Frank STAALS , Marinus JOCHEMSEN
CPC classification number: G03F7/70625 , G06T7/0004 , H01L22/20 , G06F30/20 , H01L21/00
Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.
-
公开(公告)号：US20220342316A1
公开(公告)日：2022-10-27
申请号：US17640792
申请日：2020-09-03
Applicant: ASML Netherlands B.V.
Inventor： Marleen KOOIMAN , Maxim PISARENCO , Abraham SLACHTER , Mark John MASLOW , Bernardo Andres OYARZUN RIVERA , Wim Tjibbo TEL , Ruben Cornelis MAAS
Abstract: Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.
-
公开(公告)号：US20210374936A1
公开(公告)日：2021-12-02
申请号：US16968966
申请日：2019-02-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Adrianus Cornelis Matheus KOOPMAN , Scott Anderson MIDDLEBROOKS , Antoine Gaston Marie KIERS , Mark John MASLOW
Abstract: A method for training a deep learning model of a patterning process. The method includes obtaining (i) training data including an input image of at least a part of a substrate having a plurality of features and including a truth image, (ii) a set of classes, each class corresponding to a feature of the plurality of features of the substrate within the input image, and (iii) a deep learning model configured to receive the training data and the set of classes, generating a predicted image, by modeling and/or simulation with the deep learning model using the input image, assigning a class of the set of classes to a feature within the predicted image based on matching of the feature with a corresponding feature within the truth image, and generating, by modeling and/or simulation, a trained deep learning model by iteratively assigning weights using a loss function.
-
公开(公告)号：US20240004299A1
公开(公告)日：2024-01-04
申请号：US18233263
申请日：2023-08-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Mark John MASLOW , Frank STAALS , Paul Christiaan HINNEN
CPC classification number: G03F7/2043 , G03F7/70625 , G03F7/70633 , G03F7/705 , G03F7/70616 , H01L22/20
Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.
-
公开(公告)号：US20220100098A1
公开(公告)日：2022-03-31
申请号：US17425355
申请日：2020-02-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Hermanus Adrianus DILLEN , Marc Jurian KEA , Mark John MASLOW , Koen THUIJS , Peter David ENGBLOM , Ralph Timotheus HUIJGEN , Daan Maurits SLOTBOOM , Johannes Catharinus Hubertus MULKENS
IPC: G03F7/20
Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.
-
-
-
-
-
-
-
-
-
Search Results
12
records
(took 0.018 seconds)
