公开(公告)号：US06206962B1

公开(公告)日：2001-03-27

申请号：US09178749

申请日：1998-10-27

申请人： Satoru Kijima ,  Hiroyuki Okuyama

发明人： Satoru Kijima ,  Hiroyuki Okuyama

IPC分类号： C30B2300

CPC分类号： H01L33/28 ,  H01L21/02395 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02485 ,  H01L21/02507 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631

摘要： An n-type cladding layer, the first guiding layer, an active layer, the second guiding layer, a p-type cladding layer, a backing layer, a contact layer, a superlattice layer and a cap layer are stacked in this order on an n-type substrate. The cap layer comprises p-type ZnTe and has a thickness of less than 10 nm. The contact layer is comprised of p-type ZnSe and the concentration of nitrogen added to the contact layer is in the range of 1 to 2×1018 cm−3. The backing layer comprises p-type ZnSSe mixed crystal and the concentration of nitrogen added to the backing layer is higher than that of the contact layer, in the range of 1 to 3×1018 cm−3. Before the corresponding Group II-VI compound semiconductor layers are grown by the MBE method, the temperature of cells is once increased. The operating voltage of the semiconductor light emitting device can be lowered by increasing the carrier concentrations of the Group II-VI compound semiconductor layers between the p-side electrode and the p-type cladding layer.

摘要翻译： 将n型包覆层，第一引导层，有源层，第二引导层，p型覆层，背衬层，接触层，超晶格层和覆盖层依次堆叠在 n型衬底。 盖层包括p型ZnTe，其厚度小于10nm。 接触层由p型ZnSe组成，并且加入到接触层中的氮浓度在1至2×10 18 cm -3的范围内。 背衬层包括p型ZnSSe混合晶体，添加到背衬层中的氮浓度高于接触层的浓度，范围为1至3×10 18 cm -3。 在通过MBE法生长相应的II-VI族化合物半导体层之前，电池的温度一度增加。 通过增加p侧电极和p型覆层之间的II-VI族化合物半导体层的载流子浓度，能够降低半导体发光元件的工作电压。

公开(公告)号：US20060252665A1

公开(公告)日：2006-11-09

申请号：US10539052

申请日：2003-12-09

申请人： Atsushi Tanaka ,  Satoru Kijima ,  Makoto Kubo

发明人： Atsushi Tanaka ,  Satoru Kijima ,  Makoto Kubo

IPC分类号： C11D17/08 ,  C11D1/72

CPC分类号： C11D3/3707 ,  C11D3/0036 ,  C11D3/3723

摘要： The invention provides a soil release agent and a detergent composition blended therewith. The invention relates to a crosslinked product obtained by reacting a compound having 2 to 32 hydroxyl groups, such as triethanol amine, with a compound having at least two functional groups reacting with hydroxyl groups, such as (poly)ethylene glycol diglycidyl ether, a soil release agent containing the crosslinked product, and a detergent composition containing the soil release agent.

公开(公告)号：US06952290B2

公开(公告)日：2005-10-04

申请号：US09818150

申请日：2001-03-27

申请人： Katsuhiro Ishido ,  Nobuo Matsuoka ,  Akihiro Kashiwabara ,  Toshio Hayashi ,  Takeshi Aoyama ,  Tsunao Honbo ,  Noriaki Matsui ,  Satoru Kijima

发明人： Katsuhiro Ishido ,  Nobuo Matsuoka ,  Akihiro Kashiwabara ,  Toshio Hayashi ,  Takeshi Aoyama ,  Tsunao Honbo ,  Noriaki Matsui ,  Satoru Kijima

IPC分类号： H04N1/00 ,  H01L27/00 ,  H04N1/04 ,  H04N1/40

CPC分类号： H04N1/00708 ,  H04N1/00681 ,  H04N1/00737 ,  H04N1/00748 ,  H04N1/0075

摘要： An original size sensing method for an apparatus which includes a photoelectric converter for reading an image of an original placed on a platen, and a light source for irradiating the original with light, determines the presence/absence of incidence of ambient light on the basis of an output from the photoelectric converter while the light source is kept off. When ambient light is found to be incident, the method determines the size of an original placed on the platen on the basis of that output from the photoelectric converter, which falls outside the range in which the ambient light is incident, while the light source is kept on.

摘要翻译： 一种用于装置的原始尺寸检测方法，包括用于读取放置在压板上的原稿的图像的光电转换器和用于用光照射原稿的光源，基于以下方式确定环境光的入射/不存在 光源保持关闭时来自光电转换器的输出。 当发现环境光入射时，该方法基于来自光电转换器的输出确定放置在压板上的原稿的尺寸，该光电转换器的输出落在环境光入射的范围之外，而光源为 继续。

公开(公告)号：US06836498B2

公开(公告)日：2004-12-28

申请号：US09874828

申请日：2001-06-05

申请人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

发明人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01S5/0207 ,  H01S5/0422 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/12

摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: &mgr;m) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: &mgr;m) along the direction of laminating the n-side contact layer is 15 or less. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density.

摘要翻译： 提供能够获得晶体轴的波动较小并且能够提高器件特性的晶体生长层的半导体激光器，半导体器件和氮化物系III-V族化合物基片及其制造方法。 半导体激光器在用于生长的基板的一个表面上包括多个间隔开的晶种层和具有基于多个晶种层生长的侧向生长区域的n侧接触层。 晶种层形成为沿着排列方向A相对于n侧接触层的边界处的宽度w1（单位：毫姆）的乘积和层叠方向的厚度t1（单位：毫姆） n侧接触层为15以下。在包含n型GaN的基板11上层叠包含氮化物系III-V族化合物半导体的半导体层。 形成突出的晶种部分，并且将具有与晶种部分对应的开口的生长抑制层设置在基板上。 半导体层基于晶种部分生长，具有低位错密度的侧向生长区域。

公开(公告)号：US6069367A

公开(公告)日：2000-05-30

申请号：US339848

申请日：1999-06-25

申请人： Shigetaka Tomiya ,  Satoru Kijima ,  Hiroyuki Okuyama ,  Satoshi Taniguchi ,  Hironori Tsukamoto

发明人： Shigetaka Tomiya ,  Satoru Kijima ,  Hiroyuki Okuyama ,  Satoshi Taniguchi ,  Hironori Tsukamoto

IPC分类号： H01L29/15 ,  H01L33/04 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/04 ,  H01L33/28

摘要： The purpose of the present invention is to provide a semiconductor light-emitting element that can reduce an operational voltage by improving a contact construction with a p-side electrode. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a ZnSSe cap layer, a ZnSe cap layer, a compositional gradient super-lattice layer, and a low defect contact layer are sequentially laminated on an n-type substrate. The compositional gradient super-lattice layer is formed by alternately laminating p-type ZnTe layers and p-type ZnSe layers. The p-type ZnTe layers are formed to be thickened toward the side of the low defect contact layer. The thickness of the low defect contact layer must be 5 nm or less. Relaxing lattice distortion reduces defect density of the low defect contact layer. Accordingly, the increase in the operational voltage immediately after energization is suppressed, and the operational voltage becomes lower.

摘要翻译： 本发明的目的是提供通过改善与p侧电极的接触结构来降低工作电压的半导体发光元件。 n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，ZnSSe覆盖层，ZnSe覆盖层，组成梯度超晶格层和低缺陷 接触层依次层叠在n型基板上。 通过交替层叠p型ZnTe层和p型ZnSe层来形成组成梯度超晶格层。 形成p型ZnTe层朝向低缺陷接触层侧增厚。 低缺陷接触层的厚度必须为5nm以下。 松弛晶格畸变降低了低缺陷接触层的缺陷密度。 因此，通电后立即动作电压的上升被抑制，工作电压变低。