公开(公告)号：US06836498B2

公开(公告)日：2004-12-28

申请号：US09874828

申请日：2001-06-05

申请人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

发明人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01S5/0207 ,  H01S5/0422 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/12

摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: &mgr;m) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: &mgr;m) along the direction of laminating the n-side contact layer is 15 or less. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density.

摘要翻译： 提供能够获得晶体轴的波动较小并且能够提高器件特性的晶体生长层的半导体激光器，半导体器件和氮化物系III-V族化合物基片及其制造方法。 半导体激光器在用于生长的基板的一个表面上包括多个间隔开的晶种层和具有基于多个晶种层生长的侧向生长区域的n侧接触层。 晶种层形成为沿着排列方向A相对于n侧接触层的边界处的宽度w1（单位：毫姆）的乘积和层叠方向的厚度t1（单位：毫姆） n侧接触层为15以下。在包含n型GaN的基板11上层叠包含氮化物系III-V族化合物半导体的半导体层。 形成突出的晶种部分，并且将具有与晶种部分对应的开口的生长抑制层设置在基板上。 半导体层基于晶种部分生长，具有低位错密度的侧向生长区域。

公开(公告)号：US20050000407A1

公开(公告)日：2005-01-06

申请号：US10909911

申请日：2004-08-02

申请人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

发明人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01S5/02 ,  H01S5/343 ,  C30B15/00 ,  C30B21/06 ,  C30B23/00 ,  C30B25/00 ,  C30B27/02 ,  C30B28/10 ,  C30B28/12 ,  C30B28/14 ,  C30B30/04

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01S5/0207 ,  H01S5/0422 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/12

摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: μm) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: μm) along the direction of laminating the n-side contact layer is 15 or less. This can decrease the fluctuation of the crystallographic axes in the n-side contact layer. Accordingly, crystallinity of the semiconductor layer including from n-type clad layer to a p-side contact layer laminated on the n-side contact layer is improved. A semiconductor laser and a semiconductor device capable of decreasing dislocation density and improving device characteristics, as well as a manufacturing method therefor are provided. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density. When a current injection region is disposed corresponding to the lateral growing region, the light emission efficiency can be improved. Further, when the growth suppression layer is provided with a function of reflecting or absorbing light generated in the semiconductor layer, it is possible to prevent leakage of light or intrusion of stray light from the substrate to suppress generation of noises.

公开(公告)号：US06509579B2

公开(公告)日：2003-01-21

申请号：US09760959

申请日：2001-01-16

申请人： Motonobu Takeya ,  Katsunori Yanashima ,  Masao Ikeda ,  Takeharu Asano ,  Shinro Ikeda ,  Tomonori Hino ,  Katsuyoshi Shibuya

发明人： Motonobu Takeya ,  Katsunori Yanashima ,  Masao Ikeda ,  Takeharu Asano ,  Shinro Ikeda ,  Tomonori Hino ,  Katsuyoshi Shibuya

IPC分类号： H01L2906

CPC分类号： H01L21/02378 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/32341 ,  H01S2304/12

摘要： To provide a semiconductor device capable of preventing the bowing of the substrate, and having a semiconductor layer of a III-V group compound of a nitride system with excellent crystallinity. The semiconductor layer of the III-V group compound of the nitride system whose thickness is equal to or less than 8 &mgr;m, is provided onto a substrate made of sapphire. This reduces the bowing of the substrate due to differences in a thermal expansion coefficient and a lattice constant between the substrate and the semiconductor layer of the III-V group compound of the nitride system. An n-side contact layer forming the semiconductor layer of the III-V group of the nitride system has partially a lateral growth region made by growing in a lateral direction from a crystalline part of a seed crystal layer. In the lateral growth region, dislocation density restricts low, therefore, regions corresponding to the lateral growth region of each layer formed onto the n-side contact layer has excellent crystallinity.

摘要翻译： 提供能够防止基板弯曲的半导体器件，并且具有具有优异结晶度的氮化物系的III-V族化合物的半导体层。氮化物体系的III-V族化合物的半导体层的厚度 等于或小于8μm，设置在由蓝宝石制成的基板上。 由于氮化物系III-V族化合物的基板与半导体层之间的热膨胀系数和晶格常数的差异，这减少了基板的弯曲。 形成氮化物体系的III-V族的半导体层的n侧接触层部分地是由晶种层的结晶部分沿横向生长而形成的横向生长区域。 在横向生长区域中，位错密度低，因此，与形成在n侧接触层上的各层的横向生长区域对应的区域具有优异的结晶性。

公开(公告)号：US06995406B2

公开(公告)日：2006-02-07

申请号：US10486050

申请日：2003-06-06

申请人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

发明人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

摘要： In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

摘要翻译： 在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。

公开(公告)号：US06620641B2

公开(公告)日：2003-09-16

申请号：US10172839

申请日：2002-06-17

申请人： Takashi Yamaguchi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Takashi Kobayashi ,  Tsunenori Asatsuma ,  Takeharu Asano ,  Tomonori Hino

发明人： Takashi Yamaguchi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Takashi Kobayashi ,  Tsunenori Asatsuma ,  Takeharu Asano ,  Tomonori Hino

IPC分类号： H01L2100

CPC分类号： H01S5/32341 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2206 ,  H01S5/2231

摘要： A GaN compound semiconductor laser includes an AlGaN buried layer which buries opposite sides of a ridge stripe portion formed on a p-type AlGaN cladding layer. The AlGaN buried layer is made by first patterning an upper part of the p-type AlGaN cladding layer and a p-type GaN contact layer into a ridge stripe configuration by using a SiO2 film as an etching mask, then growing the AlGaN buried layer non-selectively on the entire substrate surface to bury both sides of the ridge stripe portion under the existence of the SiO2 film on the ridge stripe portion, and thereafter selectively removing the AlGaN buried layer from above the ridge stripe portion by etching using the SiO2 film as an etching stop layer. Thus, the GaN compound semiconductor laser is stabilized in the transverse mode, intensified in output power, and improved in lifetime.

公开(公告)号：US06682991B1

公开(公告)日：2004-01-27

申请号：US09448584

申请日：1999-11-24

申请人： Tomonori Hino ,  Takeharu Asano ,  Tsunenori Asatsuma ,  Satoru Kijima ,  Kenji Funato ,  Shigetaka Tomiya

发明人： Tomonori Hino ,  Takeharu Asano ,  Tsunenori Asatsuma ,  Satoru Kijima ,  Kenji Funato ,  Shigetaka Tomiya

IPC分类号： H01L2120

CPC分类号： H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0332 ,  H01S5/2077 ,  H01S5/32341

摘要： When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth mask may be combination of an oxide film and a nitride film thereon, combination of a metal film and a nitride film thereon, combination of an oxide film, a film thereon made up of a nitride and an oxide, and a nitride film thereon, or combination of a first metal film, a second metal film thereon different from the first metal film and a nitride film thereon, for example. The oxide film may be a Si02, for example, the nitride film may be a TiN film or a SiN film, the film made up of a nitride and an oxide may be a SiNO film, and the metal film may be a Ti film or a Pt film, for example.

摘要翻译： 当在衬底上制造生长掩模并且使用生长掩模在衬底上选择性地生长氮化物III-V化合物半导体时，使用包括至少形成其顶表面的氮化物的多层膜作为生长掩模。 生长掩模可以是其上的氧化物膜和氮化物膜的组合，其上的金属膜和氮化物膜的组合，氧化物膜，由氮化物和氧化物组成的膜以及氮化物膜上的氮化物膜的组合 ，或第一金属膜，与第一金属膜不同的第二金属膜和其上的氮化物膜的组合。 氧化膜可以是SiO 2，例如，氮化膜可以是TiN膜或SiN膜，由氮化物和氧化物构成的膜可以是SiNO膜，并且金属膜可以是Ti膜或 例如Pt膜。

公开(公告)号：US07149235B2

公开(公告)日：2006-12-12

申请号：US11132981

申请日：2005-05-19

申请人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

发明人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01S5/00

CPC分类号： H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.

摘要翻译： 提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。 该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。 相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。 在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极 ）。 激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。 激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光之间的距离B 2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

公开(公告)号：US20050218422A1

公开(公告)日：2005-10-06

申请号：US11132981

申请日：2005-05-19

申请人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

发明人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L21/205 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40 ,  H01L29/24

CPC分类号： H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μM while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.

摘要翻译： 提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。 该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。 相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。 在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极 ）。 激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。 激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光器之间的距离B <2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

公开(公告)号：US06950451B2

公开(公告)日：2005-09-27

申请号：US10480568

申请日：2002-06-14

申请人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

发明人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L21/205 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40 ,  H01S3/10 ,  H01S3/082 ,  H01S3/14 ,  H01S5/00

CPC分类号： H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.

摘要翻译： 提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。 该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。 相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。 在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极 ）。 激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。 激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光之间的距离B 2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

公开(公告)号：US08435880B2

公开(公告)日：2013-05-07

申请号：US12906217

申请日：2010-10-18

申请人： Akira Ohmae ,  Kota Tokuda ,  Masayuki Arimochi ,  Nobuhiro Suzuki ,  Michinori Shiomi ,  Tomonori Hino ,  Katsunori Yanashima

发明人： Akira Ohmae ,  Kota Tokuda ,  Masayuki Arimochi ,  Nobuhiro Suzuki ,  Michinori Shiomi ,  Tomonori Hino ,  Katsunori Yanashima

IPC分类号： H01L33/00

CPC分类号： H01L33/16 ,  H01L33/007 ,  H01L33/32 ,  H01S5/3013

摘要： In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than −0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.

摘要翻译： 在制造半导体器件的方法中，该方法包括以下步骤：在不生长缓冲层的情况下，直接在衬底上生长形成器件结构的氮化物III-V族化合物半导体层，该衬底由材料 具有六边形晶体结构，并且具有相对于C轴方向从R平面以不小于-0.5°且不大于0°的角度取向的主表面。