公开(公告)号：US09321247B2

公开(公告)日：2016-04-26

申请号：US13383656

申请日：2010-07-09

申请人： Hiromoto Haruta ,  Hirokazu Matsuda ,  Tsuyoshi Inoue ,  Kazuhito Okumura ,  Osamu Kondo ,  Yoko Muraoka

发明人： Hiromoto Haruta ,  Hirokazu Matsuda ,  Tsuyoshi Inoue ,  Kazuhito Okumura ,  Osamu Kondo ,  Yoko Muraoka

IPC分类号： B32B27/08 ,  G02B1/10 ,  C09J7/02

CPC分类号： B32B27/08 ,  C09J7/29 ,  C09J2201/606 ,  G02B1/10 ,  G02B1/105 ,  G02B1/14 ,  G02B1/16 ,  Y10T428/26

摘要： A transparent film, the back-face of which has excellent resistance to scratch and printability, and a surface protection film which has such a transparent film are provided. A transparent film 10 has a substrate layer 12 formed of a transparent resin material, and a back-face layer 14 with a thickness of 1 μm or less provided on a first face 12A thereof. A percent change in coefficient of friction Δμ is less than 10% for the transparent film 10 when the percent change is determined from a coefficient of friction μ50 of the back-face layer after being conserved at 50° C. and 15% RH for three days and a coefficient of friction μ80 of the back-face layer after being conserved at 80° C. and 80% RH for three days, with an absolute value of difference between the two coefficients of friction |μ80−μ50| being divided by the smaller value of the two coefficients of friction.

摘要翻译： 其背面具有优异的耐擦伤性和可印刷性的透明膜，以及具有这种透明膜的表面保护膜。 透明膜10具有由透明树脂材料形成的基底层12和设置在其第一面12A上的厚度为1μm以下的背面层14。 当在50℃和15％RH保存后，背面层的摩擦系数μ50确定百分比变化时，透明膜10的摩擦系数Dgr;μ的百分比变化小于10％ 在80℃和80％RH保存3天后，背面层的摩擦系数μ80为摩擦系数μ80，两摩擦系数之间的绝对值为|μ80-μ50| 除以两个摩擦系数的较小值。

公开(公告)号：US08721324B2

公开(公告)日：2014-05-13

申请号：US13336433

申请日：2011-12-23

申请人： Kensuke Suenami ,  Tsuyoshi Inoue

发明人： Kensuke Suenami ,  Tsuyoshi Inoue

IPC分类号： B29C45/02

CPC分类号： B29C45/586 ,  B29C45/16 ,  B29C45/54

摘要： An injection device may include an injecting portion, and a material feeding portion having a pelletized resinous material. The material feeding portion includes a cylindrical feeding passage that is communicated with the injecting portion, a screw that is disposed in the feeding passage, and a drive mechanism that is configured to rotate the screw about a rotational axis. When the screw is rotated about the rotational axis by the drive mechanism, the pelletized resinous material can be fed into the injecting portion.

摘要翻译： 注射装置可以包括注射部分和具有颗粒状树脂材料的材料供给部分。 材料供给部分包括与注入部分连通的圆柱形进给通道，设置在进给通道中的螺钉和驱动机构，该驱动机构构造成围绕旋转轴线旋转螺钉。 当螺杆通过驱动机构绕旋转轴线旋转时，颗粒状树脂材料可以被供给到注射部分中。

公开(公告)号：US08614493B2

公开(公告)日：2013-12-24

申请号：US13518564

申请日：2010-11-11

申请人： Masao Moriguchi ,  Yohsuke Kanzaki ,  Tsuyoshi Inoue

发明人： Masao Moriguchi ,  Yohsuke Kanzaki ,  Tsuyoshi Inoue

IPC分类号： H01L27/14 ,  H01L21/00

CPC分类号： H01L27/14692 ,  H01L27/14609

摘要： A photosensor element is provided with a gate electrode disposed on an insulating substrate, a gate insulating film disposed so as to cover the gate electrode, a semiconductor layer disposed on the gate insulating film so as to overlap the gate electrode, and a source electrode and a drain electrode provided on the semiconductor layer so as to overlap the gate electrode and so as to face each other. The photosensor element has the semiconductor layer provided with an intrinsic semiconductor layer in which a channel region is defined and an extrinsic semiconductor layer that is laminated on the intrinsic semiconductor layer such that the channel region is exposed. The extrinsic semiconductor layer protrudes from the drain electrode on the side close to the channel region.

摘要翻译： 光传感器元件设置有设置在绝缘基板上的栅极电极，设置成覆盖栅电极的栅极绝缘膜，设置在栅极绝缘膜上以与栅电极重叠的半导体层，以及源电极和 漏极，设置在半导体层上，以便与栅电极重叠并且彼此面对。 光电传感器元件具有设置有其中限定沟道区的本征半导体层的半导体层和层叠在本征半导体层上以使得沟道区域露出的非本征半导体层。 外部半导体层在靠近沟道区的一侧从漏电极突出。

公开(公告)号：US20120292627A1

公开(公告)日：2012-11-22

申请号：US13519563

申请日：2010-11-11

申请人： Masao Moriguchi ,  Yohsuke Kanzaki ,  Tsuyoshi Inoue

发明人： Masao Moriguchi ,  Yohsuke Kanzaki ,  Tsuyoshi Inoue

IPC分类号： H01L29/786

CPC分类号： H01L27/1214 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14678

摘要： Disclosed is a photosensor element that is provided with a gate electrode (11da) disposed on an insulating substrate (10), a gate insulation film (12) disposed so as to cover the gate electrode (11da), a semiconductor layer (15db) disposed on the gate insulating film (12) so as to overlap the gate electrode (11da), and a source electrode (16da) and a drain electrode (16db) provided on the semiconductor layer (15db) so as to overlap the gate electrode (11da) and so as to face each other. The semiconductor layer (15db) is provided with an intrinsic semiconductor layer (13db) in which a channel region (C) is defined and an extrinsic semiconductor layer (14db) that is laminated on the intrinsic semiconductor layer (13db) such that the channel region (C) is exposed therefrom. The intrinsic semiconductor layer (13db) is an amorphous silicon layer containing nanocrystalline silicon particles.

摘要翻译： 公开了一种光传感元件，其设置有设置在绝缘基板（10）上的栅电极（11da），设置为覆盖栅电极（11da）的栅极绝缘膜（12），设置有半导体层（15db） 在所述栅极绝缘膜（12）上与所述栅电极（11da）重叠，以及设置在所述半导体层（15db）上的源极电极（16da）和漏电极（16db），以与所述栅极电极 ），以便彼此面对。 半导体层（15db）设置有其中限定沟道区（C）的本征半导体层（13db）和层叠在本征半导体层（13db）上的非本征半导体层（14db），使得沟道区 （C）。 本征半导体层（13db）是含有纳米晶硅颗粒的非晶硅层。

公开(公告)号：US20120228621A1

公开(公告)日：2012-09-13

申请号：US13510315

申请日：2010-08-23

申请人： Michiko Takei ,  Tohru Okabe ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

发明人： Michiko Takei ,  Tohru Okabe ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L21/268 ,  H01L27/1229 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78678

摘要： An object of this invention is to provide a semiconductor device in which TFTs with high mobility are arranged in both of display and peripheral circuit areas. A semiconductor device fabricating method according to the present invention includes the steps of: irradiating an amorphous silicon layer (34) with energy, thereby obtaining a microcrystalline silicon layer; and forming a doped semiconductor layer (35) on the amorphous silicon layer (34). In the step of irradiating, the amorphous silicon layer (34) is irradiated with energy that has a first quantity, thereby forming a first microcrystalline silicon layer (34A) including a channel layer for a first TFT (30A), and is also irradiated with energy that has a second quantity, which is larger than the first quantity, thereby forming a second microcrystalline silicon layer (34B) including a channel layer for a second TFT (30B).

摘要翻译： 本发明的目的是提供一种半导体器件，其中具有高迁移率的TFT被布置在显示器和外围电路区域中。 根据本发明的半导体器件制造方法包括以下步骤：用能量照射非晶硅层（34），从而获得微晶硅层; 以及在所述非晶硅层（34）上形成掺杂半导体层（35）。 在照射步骤中，用具有第一量的能量照射非晶硅层（34），由此形成包括用于第一TFT（30A）的沟道层的第一微晶硅层（34A），并且还用 具有大于第一量的第二量的能量，由此形成包括用于第二TFT（30B）的沟道层的第二微晶硅层（34B）。

公开(公告)号：US20120104406A1

公开(公告)日：2012-05-03

申请号：US13383077

申请日：2010-07-08

申请人： Tsuyoshi Inoue ,  Tohru Okabe ,  Tetsuya Aita ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

发明人： Tsuyoshi Inoue ,  Tohru Okabe ,  Tetsuya Aita ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

IPC分类号： H01L33/08

CPC分类号： H01L29/78627 ,  G02F1/1368 ,  G02F2202/104 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78624

摘要： Disclosed is a high-quality, efficiently manufacturable thin film transistor in which leakage current is minimized. The thin film transistor is provided with a semiconductor layer (34) that contains a channel region (34C) having a microcrystalline semiconductor; source and drain contact layers (35S and 35D) that contains impurities; a first source metal layer (36S) and a first drain metal layer (36D), and a second source metal layer (37S) and a second drain metal layer (37D). The end portion of the second metal source layer (37S) is located at a position receded from the end portion of the first metal source layer (36S) and the end portion of the second drain metal layer (37D) is located at a position receded from the end portion of the first drain metal layer (36D). The semiconductor layer (34) contains low concentration impurity diffusion regions formed near the end portions of the aforementioned source contact layer (35S) and drain contact layer (35D).

摘要翻译： 公开了一种其中泄漏电流最小化的高品质，高效制造的薄膜晶体管。 薄膜晶体管设置有包含具有微晶半导体的沟道区（34C）的半导体层（34） 源极和漏极接触层（35S和35D），其含有杂质; 第一源极金属层（36S）和第一漏极金属层（36D）以及第二源极金属层（37S）和第二漏极金属层（37D）。 第二金属源层（37S）的端部位于从第一金属源层（36S）的端部退出的位置，第二漏极金属层（37D）的端部位于退出的位置 从第一漏极金属层（36D）的端部开始。 半导体层（34）包含在上述源极接触层（35S）和漏极接触层（35D）的端部附近形成的低浓度杂质扩散区域。

公开(公告)号：US07949959B2

公开(公告)日：2011-05-24

申请号：US12159364

申请日：2007-10-26

申请人： Makoto Nishizaki ,  Tsuyoshi Inoue ,  Satoshi Matsuura

发明人： Makoto Nishizaki ,  Tsuyoshi Inoue ,  Satoshi Matsuura

IPC分类号： G06F11/00 ,  G06F17/30

CPC分类号： G06F9/453

摘要： A target estimation device that appropriately estimates a function targeted by a user from among functions of an operated apparatus includes: an item inputting unit (102) that obtains an item; a function representation storing unit (107) that stores function names of the operated apparatus; an identical word detecting unit (116) that detects a category of a word identical between each of the function names and the item; an operation intention calculating unit (117) that changes a method for calculating similarities between the item and the respective function names, for each of the function names, depending on the detected category, and that calculates the similarities as degrees of intentions of the user who has selected the item, using the changed calculation method; and a target estimation unit (112) that estimates a function so that the function having a higher degree of an intention is the function targeted by the user.

摘要翻译： 从操作装置的功能中适当地估计用户所针对的功能的目标估计装置包括：获取项目的项目输入单元（102） 功能表示存储单元，其存储所操作的设备的功能名称; 相同的字检测单元（116），其检测每个功能名称和项目之间相同的单词的类别; 操作意图计算单元，其根据检测到的类别改变用于计算每个功能名称的项目和各个功能名称之间的相似度的方法，并且根据检测到的类别来计算与用户的意图程度相似的相似度 使用改变的计算方法选择了该项目; 以及估计功能的目标估计单元（112），使得具有较高意图度的功能是用户所针对的功能。

公开(公告)号：US20110016072A1

公开(公告)日：2011-01-20

申请号：US12745752

申请日：2009-08-26

申请人： Tsuyoshi Inoue ,  Jun Ozawa

发明人： Tsuyoshi Inoue ,  Jun Ozawa

IPC分类号： G06N5/02

CPC分类号： H04N21/482 ,  G06F9/453 ,  H04N5/44543 ,  H04N21/42204 ,  H04N21/4312 ,  H04N21/44222 ,  H04N21/4667 ,  H04N2005/4412

摘要： An operation support apparatus includes: an operation record storage unit (303) in which an operation record of a user is stored; a target function candidate storage unit (309) which defines and stores target function candidates; an operation strategy determination unit (305) which determines that the user's operation strategy is an operation strategy which originates from content selection, in the case where the operation included in the operation record is a predetermined operation performed when the appliance is in a status in which content can be displayed or selected; a target function inference unit (308) which infers the target function according to a method suited to the operation strategy determined by the operation strategy determination unit (305); and an operation support determination unit (310) which determines an operation support method for the user, using the inferred target function.

摘要翻译： 操作支持设备包括：存储用户的操作记录的操作记录存储单元（303）; 定义和存储目标函数候选的目标函数候选存储单元（309）; 确定用户的操作策略是从内容选择产生的操作策略的操作策略确定单元（305），在操作记录中包括的操作是当设备处于以下状态时执行的预定操作的情况下： 可以显示或选择内容; 根据由操作策略确定单元（305）确定的适合于操作策略的方法推定目标功能的目标功能推断单元（308）; 以及使用所推断的目标函数来确定用户的操作支持方法的操作支持确定单元（310）。

公开(公告)号：US20100333022A1

公开(公告)日：2010-12-30

申请号：US12865919

申请日：2009-10-22

申请人： Tsuyoshi Inoue ,  Jun Ozawa

发明人： Tsuyoshi Inoue ,  Jun Ozawa

IPC分类号： G06F3/048

CPC分类号： G11B27/32 ,  G06F3/04895 ,  G06F9/453 ,  G11B27/34 ,  H04N5/4403 ,  H04N5/44543 ,  H04N21/4147 ,  H04N21/42204 ,  H04N21/4334 ,  H04N21/44222 ,  H04N21/4667 ,  H04N21/47214 ,  H04N21/482

摘要： The operation support apparatus includes: an operation load calculation unit (106) which calculates an operation load on a user in performing a selecting operation included in one of operation records, using the selecting operation and a previous selecting operation included in another one of the records, the calculation being performed for each of selecting operations included in the records; a non-thinking operation determination unit (107) which determines, for each selecting operation included in the records, whether or not it is a non-thinking operation that is a randomly-performed operation, by determining that the selecting operation is more likely to be the non-thinking operation when the operation load is smaller; and a target function inference unit (108) and a target function candidate storage unit (109) which provide the user with operation support based on the records of the selecting operations excluding the selecting operation determined as the non-thinking operation.

摘要翻译： 操作支持装置包括：操作负载计算单元，其使用包括在另一个记录中的选择操作和先前的选择操作来计算用户执行包括在一个操作记录中的选择操作的操作负载 对包括在记录中的每个选择操作执行计算; 一种非思考操作确定单元，其针对包括在记录中的每个选择操作确定是否是作为随机执行的操作的非思维操作，通过确定选择操作更可能 当操作负载较小时，是非思维操作; 以及目标函数推断单元（108）和目标函数候选存储单元（109），其基于除了被选择为非思考操作的选择操作之外的选择操作的记录来向用户提供操作支持。

公开(公告)号：US20090151415A1

公开(公告)日：2009-06-18

申请号：US11719704

申请日：2005-11-21

申请人： Tsuyoshi Inoue ,  Guy Hauret

发明人： Tsuyoshi Inoue ,  Guy Hauret

IPC分类号： B21B27/06

CPC分类号： B21B27/10 ,  B21B45/0242

摘要： The invention relates to a method for feeding lubricant during hot rolling, in which the surfaces of the rolling rolls are fed with a lubricating emulsion, characterized in that said lubricating emulsion, consisting of a lubricating oil having a viscosity between 10 cSt and 400 cSt at 40° C., mixed with water, is directed onto the surfaces of the rolling rolls via at least one lubricant feed nozzle, at a temperature above 0° C. but below 25° C.

摘要翻译： 本发明涉及一种用于在热轧期间供给润滑剂的方法，其中轧辊的表面被供给润滑乳液，其特征在于，所述润滑乳液由粘度在10cSt和400cSt之间的润滑油组成 40℃，与水混合，通过至少一种润滑剂进料喷嘴在高于0℃但低于25℃的温度下被引导到轧辊的表面上。