公开(公告)号：US08471255B2

公开(公告)日：2013-06-25

申请号：US13391427

申请日：2010-04-14

申请人： Tohru Okabe

发明人： Tohru Okabe

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/76 ,  H01L31/112 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： Provided is a thin film transistor, wherein the on-off ratio thereof is increased by decreasing the OFF current thereof. A bottom-gate TFT (10) is provided with a channel layer (40) obtained by forming a second silicon layer (35) on a first silicon layer (30). Since amorphous silicon regions (32), which surround multiple grains (31) contained in the first silicon layer (30), contain hydrogen in an amount sufficient to enable termination of dangling bonds, most of dangling bonds in the amorphous silicon region (32) are terminated by hydrogen. For this reason, it becomes less likely to have defect levels formed in the amorphous silicon regions (32), and an OFF current that flows through defect levels is therefore decreased. A high number of the grains (31) are retained in the first silicon layer (30), and cause a large ON current to flow. Consequently, the on-off ratio of the TFT (10) is increased.

摘要翻译： 提供一种薄膜晶体管，其中通过减小其截止电流来增加其开关比。 底栅TFT（10）设置有通过在第一硅层（30）上形成第二硅层（35）而获得的沟道层（40）。 由于包含在第一硅层（30）中的包围多个晶粒（31）的非晶硅区域（32）含有足以能够终止悬挂键的氢，所以非晶硅区域（32）中的大多数悬挂键 被氢气终止。 因此，在非晶硅区域（32）中形成的缺陷水平变得不太可能，因此流过缺陷水平的OFF电流因此降低。 大量的晶粒（31）保留在第一硅层（30）中，并导致大的导通电流流动。 因此，TFT（10）的开关比增加。

公开(公告)号：US20130105802A1

公开(公告)日：2013-05-02

申请号：US13518566

申请日：2010-12-21

申请人： Yoshiyuki Harumoto ,  Takeshi Hara ,  Tohru Okabe ,  Takeshi Yaneda ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Michiko Takei

发明人： Yoshiyuki Harumoto ,  Takeshi Hara ,  Tohru Okabe ,  Takeshi Yaneda ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Michiko Takei

IPC分类号： H01L29/786 ,  H01L33/08 ,  H01L29/66

CPC分类号： H01L29/786 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78678 ,  H01L29/78696 ,  H01L33/08

摘要： The present invention has an object of providing a TFT in which generation of an OFF current is reduced by an efficient manufacturing method. A thin film transistor 100 according to the present invention has a gate electrode 12 formed on a substrate 10, an insulating layer 14 formed on the gate electrode 12, a microcrystalline amorphous silicon layer 18 and an amorphous silicon layer 16 that are formed on the insulating layer 14, a semiconductor layer 20 containing an impurity formed on the amorphous silicon layer 16, and a source electrode 22A and a drain electrode 22B that are formed on the semiconductor layer 20 containing an impurity. The microcrystalline amorphous silicon layer 18 and the semiconductor layer 20 containing an impurity are connected to each other through the amorphous silicon layer 16 without being in direct contact with each other.

摘要翻译： 本发明的目的是提供一种通过有效的制造方法来减少OFF电流的产生的TFT。 根据本发明的薄膜晶体管100具有形成在基板10上的栅电极12，形成在栅电极12上的绝缘层14，形成在绝缘层上的微晶非晶硅层18和非晶硅层16。 层14，包含形成在非晶硅层16上的杂质的半导体层20以及形成在包含杂质的半导体层20上的源电极22A和漏极22B。 含有杂质的微晶非晶硅层18和半导体层20通过非晶硅层16彼此连接而不直接接触。

公开(公告)号：US08432096B2

公开(公告)日：2013-04-30

申请号：US12517618

申请日：2007-07-26

申请人： Yohsuke Kanzaki ,  Hirohiko Nishiki ,  Tohru Okabe

发明人： Yohsuke Kanzaki ,  Hirohiko Nishiki ,  Tohru Okabe

IPC分类号： H05B33/06

CPC分类号： H01J9/221 ,  H01L27/3288 ,  H01L2251/5361 ,  H01L2251/568

摘要： A single-color EL element includes a substrate; a plurality of signal wires arranged over the substrate; a plurality of pixel electrodes electrically coupled with a respective one of the plurality of signal wires via connecting wires to constitute a matrix as a whole, the plurality of pixel electrodes being separate from one another; and a single-color EL layer arranged over the plurality of pixel electrodes.

摘要翻译： 单色EL元件包括基板; 布置在所述基板上的多个信号线; 多个像素电极，经由连接线与所述多个信号线中的相应一个电连接，以构成整体的矩阵，所述多个像素电极彼此分离; 以及布置在多个像素电极上的单色EL层。

公开(公告)号：US20120108018A1

公开(公告)日：2012-05-03

申请号：US13383220

申请日：2010-03-16

申请人： Tohru Okabe ,  Hirohiko Nishiki ,  Yoshimasa Chikama ,  Takeshi Hara

发明人： Tohru Okabe ,  Hirohiko Nishiki ,  Yoshimasa Chikama ,  Takeshi Hara

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/42384

摘要： A method for manufacturing a thin film transistor substrate includes a step of forming a gate electrode (11a) and a first interconnect on a substrate (10), a step of forming a gate insulating film (12a) having a contact hole at a position overlapping the first interconnect, a step of forming a source electrode (13a) and a drain electrode (13b) overlapping the gate electrode (11a) and separated apart from each other, and a second interconnect connected via the contact hole to the first interconnect, a step of successively forming an oxide semiconductor film (14) and a second insulating film (15), and thereafter, patterning the second insulating film (15) to form an interlayer insulating film (15a), and a step of reducing the resistance of the oxide semiconductor film (14) exposed through the interlayer insulating film (15a) to form a pixel electrode (14b).

摘要翻译： 制造薄膜晶体管基板的方法包括在基板（10）上形成栅极（11a）和第一布线的步骤，在重叠的位置形成具有接触孔的栅极绝缘膜（12a）的步骤 所述第一互连，形成与所述栅电极（11a）重叠并分离的源电极（13a）和漏电极（13b）的步骤，以及经由所述接触孔与所述第一互连件连接的第二互连件， 连续地形成氧化物半导体膜（14）和第二绝缘膜（15）的步骤，然后对第二绝缘膜（15）进行图案化以形成层间绝缘膜（15a），并且降低 氧化物半导体膜（14）通过层间绝缘膜（15a）露出以形成像素电极（14b）。

公开(公告)号：US08168511B2

公开(公告)日：2012-05-01

申请号：US12675501

申请日：2008-06-12

申请人： Hirohiko Nishiki ,  Tohru Okabe

发明人： Hirohiko Nishiki ,  Tohru Okabe

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/268 ,  H01L27/1214

摘要： A method for manufacturing a display device includes a step of preparing a flexible substrate including a delamination layer on its back surface, a step of bonding a support substrate to the delamination layer of the flexible substrate via an adhesive layer, a step of forming predetermined devices on a front surface of the flexible substrate having the support substrate bonded thereto, and a step of removing the support substrate by delaminating the delamination layer from the flexible substrate having the devices formed thereon.

摘要翻译： 一种显示装置的制造方法，其特征在于，包括在其背面包含剥离层的柔性基板的制造工序，通过粘接层将支撑基板与柔性基板的分层接合的工序， 在具有与其结合的支撑基板的柔性基板的前表面上，以及通过从其上形成有器件的柔性基板剥离分层而去除支撑基板的步骤。

公开(公告)号：US20100316870A1

公开(公告)日：2010-12-16

申请号：US12526288

申请日：2008-01-11

申请人： Tohru Okabe ,  Yoshimasa Chikama

发明人： Tohru Okabe ,  Yoshimasa Chikama

IPC分类号： B32B33/00

CPC分类号： G02F1/1333 ,  G02F1/1303 ,  G02F2001/133302 ,  Y10T428/266

摘要： A method for manufacturing a display device includes a first step of preparing a first substrate which has a first area to be etched and a second area located at a periphery of the first area and which has a display element on its surface, a second step of etching and removing the first area of the first substrate, a third step of forming a second substrate on a surface of the first substrate that is opposite to the surface on which the display element is located, and a fourth step of removing the second area of the first substrate.

摘要翻译： 一种制造显示装置的方法包括：制备具有第一待蚀刻区域的第一基板和位于第一区域周边的第二区域并在其表面上具有显示元件的第一步骤，第二步骤 蚀刻和去除第一衬底的第一区域;第三步骤，在与第一衬底的与显示元件所在的表面相对的表面上形成第二衬底;以及第四步骤， 第一个底物。

公开(公告)号：US08810765B2

公开(公告)日：2014-08-19

申请号：US12527731

申请日：2008-01-11

申请人： Tohru Okabe ,  Hirohiko Nishiki

发明人： Tohru Okabe ,  Hirohiko Nishiki

IPC分类号： G02F1/1339 ,  H05B33/04 ,  H01L51/52 ,  H01L27/32 ,  H05B33/22

CPC分类号： H05B33/22 ,  H01L27/3246 ,  H01L51/5237 ,  H01L51/525 ,  H01L51/5259 ,  H01L2251/5338 ,  H05B33/04

摘要： An electroluminescence element includes an electroluminescence substrate including a thin film transistor substrate, and a light-emitting layer provided over the thin film transistor substrate and divided by picture-element separating portions so as to correspond to unit picture elements; and a sealing substrate arranged to hermetically seal the light-emitting layer of the electroluminescence substrate. At least one of the electroluminescence substrate and the sealing substrate is a flexible substrate. Spacers are provided between the electroluminescence substrate and the sealing substrate.

摘要翻译： 电致发光元件包括具有薄膜晶体管基板的电致发光基板和设置在薄膜晶体管基板上并由图像元素分离部分分割以对应于单位图像元素的发光层; 以及密封基板，其设置成气密地密封电致发光基板的发光层。 电致发光基板和密封基板中的至少一个是柔性基板。 在电致发光基板和密封基板之间设置隔板。

公开(公告)号：US08582072B2

公开(公告)日：2013-11-12

申请号：US12933763

申请日：2009-03-03

申请人： Tohru Okabe ,  Takeshi Hara ,  Tetsuya Aita ,  Tsuyoshi Inoue

发明人： Tohru Okabe ,  Takeshi Hara ,  Tetsuya Aita ,  Tsuyoshi Inoue

IPC分类号： G02F1/1333

CPC分类号： B29D11/0073 ,  B32B37/0015 ,  B32B37/12 ,  B32B37/144 ,  B32B37/28 ,  B32B38/0008 ,  B32B43/006 ,  B32B2037/1253 ,  B32B2307/538 ,  B32B2307/734 ,  B32B2309/02 ,  B32B2309/027 ,  B32B2309/10 ,  B32B2310/0831 ,  B32B2310/0843 ,  B32B2315/08 ,  B32B2457/20 ,  G02F1/1303 ,  G02F1/133305 ,  G02F2201/54

摘要： A method for manufacturing a display device 10 includes a substrate supporting step for supporting a plastic substrate 19 on a support substrate 50, with the plastic substrate 19 curved, and a thin film lamination step for laminating a plurality of thin films on the plastic substrate 19 supported on the support substrate 50.

摘要翻译： 制造显示装置10的方法包括：基板支撑步骤，用于将塑料基板19支撑在支撑基板50上，塑料基板19弯曲;以及薄膜层叠步骤，用于在塑料基板19上层叠多个薄膜 支撑在支撑基板50上。

公开(公告)号：US20120223308A1

公开(公告)日：2012-09-06

申请号：US13500100

申请日：2010-06-17

申请人： Tohru Okabe ,  Yoshimasa Chikama

发明人： Tohru Okabe ,  Yoshimasa Chikama

IPC分类号： H01L29/786 ,  H01L21/461

CPC分类号： H01L29/7869 ,  G02F1/1368 ,  G02F2001/13606 ,  H01L27/1225

摘要： The present invention provides a thin-film transistor capable of high-speed operation, a process for producing the same, and a display device including the same. The thin-film transistor of the present invention includes, on a substrate, in the order of: a gate electrode; a gate insulating film; an oxide semiconductor film; and a protective insulating film, the protective insulating film having a planar shape that is completely or substantially the same as the planar shape of the gate electrode.

摘要翻译： 本发明提供一种能够进行高速运行的薄膜晶体管及其制造方法，以及包括该薄膜晶体管的显示装置。 本发明的薄膜晶体管在基板上依次包括：栅电极; 栅极绝缘膜; 氧化物半导体膜; 和保护绝缘膜，所述保护绝缘膜具有与所述栅电极的平面形状完全或基本相同的平面形状。

公开(公告)号：US08236125B2

公开(公告)日：2012-08-07

申请号：US12808275

申请日：2008-09-25

申请人： Tohru Okabe

发明人： Tohru Okabe

IPC分类号： B29C65/48 ,  B29C63/00 ,  B32B37/26 ,  B32B38/04 ,  B32B38/10

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603 ,  H01L29/7869 ,  H01L2221/6835 ,  Y10T156/1064 ,  Y10T156/1189 ,  Y10T156/1195 ,  Y10T428/31504

摘要： A method for manufacturing a thin film multilayer device includes bonding a plastic substrate to a support substrate using an adhesive so that an upper film and a lower film constituting a weak adhesive inorganic film are sandwiched between the plastic substrate and the support substrate, and the plastic substrate is supported by the support substrate with an adhesive force stronger than an adhesive force between the upper and lower films, stacking a plurality of thin films on the plastic substrate supported by the support substrate, and separating the upper film from the lower film to separate the plastic substrate on which the plurality of thin films are stacked, from the support substrate.

摘要翻译： 一种薄膜多层器件的制造方法，其特征在于，使用粘合剂将塑料基板接合到支撑基板上，使得在所述塑料基板和所述支撑基板之间夹着构成弱粘合性无机膜的上部膜和下部膜，并且所述塑料 基板由支撑基板支撑，粘合力比上下膜之间的粘合力强，在由支撑基板支撑的塑料基板上堆叠多个薄膜，并将上膜从下膜分离，以分离 其上堆叠有多个薄膜的塑料基板。