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    Electronic component having a resonator and fabrication process
    21.
    发明授权
    Electronic component having a resonator and fabrication process 有权
    具有谐振器和制造工艺的电子部件

    公开(公告)号：US07180224B2

    公开(公告)日：2007-02-20

    申请号：US10815472

    申请日：2004-04-01

    Applicant: Guillaume Bouche ,  Nick Smears ,  Pascal Ancey ,  Gregory Caruyer

    Inventor： Guillaume Bouche ,  Nick Smears ,  Pascal Ancey ,  Gregory Caruyer

    IPC: H01L41/08

    CPC classification number: H03H9/586 ,  H03H2003/0428 ,  H03H2003/0435 ,  H03H2003/0471

    Abstract: An electronic component (1) includes a substrate (2) and at least two piezoelectric resonators (3, 4) each having an active element (6, 9), a lower electrode (5, 8) and an upper electrode (7, 10). The lower electrode (5) of the first resonator (3) is made of a material that is different from that of the lower electrode (8) of the second resonator (4) such that the resonators exhibit different resonance frequencies.

    Abstract translation: 电子部件（1）包括基板（2）和至少两个各自具有有源元件（6,9），下电极（5,8）和上电极（7,10）的压电谐振器（3,4） ）。 第一谐振器（3）的下电极（5）由不同于第二谐振器（4）的下电极（8）的材料制成，使得谐振器表现出不同的谐振频率。

    MOS transistor with a deformable gate
    23.
    发明申请
    MOS transistor with a deformable gate 有权
    具有可变形栅极的MOS晶体管

    公开(公告)号：US20060054984A1

    公开(公告)日：2006-03-16

    申请号：US11227624

    申请日：2005-09-15

    Applicant: Pascal Ancey ,  Nicolas Abele ,  Fabrice Casset

    Inventor： Pascal Ancey ,  Nicolas Abele ,  Fabrice Casset

    IPC: H01L29/84

    CPC classification number: G01P15/124 ,  B81B3/0035 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0109 ,  G01L1/005 ,  G01L9/0098 ,  H03B5/12 ,  H03B5/1237 ,  H03B5/30

    Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conductive gate beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on each side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the gate beam when said beam is in maximum deflection towards the channel area.

    Abstract translation: 一种MOS晶体管，其具有形成在半导体衬底中的可变形栅极，包括源极和漏极区域，所述源极区域和漏极区域由沿着从源极到漏极的第一方向延伸的沟道区域和与第一方向垂直的第二方向分开， 至少在所述通道区域上方，在所述通道区域的每一侧上放置在所述基板上的支承点之间沿所述第二方向延伸，并且使得所述通道区域的表面是中空的，并且具有与所述栅极梁的形状类似的形状 光束朝向通道区域的最大偏转。

    Support and decoupling structure for an acoustic resonator, acoustic resonator and corresponding integrated circuit
    24.
    发明申请
    Support and decoupling structure for an acoustic resonator, acoustic resonator and corresponding integrated circuit 审中-公开
    声谐振器，声谐振器和相应的集成电路的支持和去耦结构

    公开(公告)号：US20050023931A1

    公开(公告)日：2005-02-03

    申请号：US10868383

    申请日：2004-06-15

    Applicant: Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

    Inventor： Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

    IPC: H01L23/14 ,  H01L27/20 ,  H01L41/04 ,  H03H9/05 ,  H03H9/17 ,  H03H9/58

    CPC classification number: H03H9/175

    Abstract: An acoustic resonator assembly includes a layer of high-acoustic-impedance material and a layer of low-acoustic-impedance material made of a low-electrical-permittivity material. This assembly may support the resonator over an interconnect layer or act as a decoupling assembly between two active elements of the resonator. The assembly may alternatively include three low-acoustic impedance layers. Alternatively, the assembly may include three acoustic impedance layers wherein two of the layers are low acoustic impedance layers and the third layer has a higher acoustic impedance than the first two or alternatively is a high-acoustic impedance layer.

    Abstract translation: 声谐振器组件包括高声阻抗材料层和由低电容率材料制成的低声阻抗材料层。 该组件可以在互连层上支撑谐振器或者用作谐振器的两个有源元件之间的去耦组件。 组件可以替代地包括三个低声阻抗层。 或者，组件可以包括三个声阻抗层，其中两个层是低声阻抗层，并且第三层具有比前两个更高的声阻抗，或者备选地是高声阻抗层。

    Integrated circuit comprising an auxiliary component, for example a passive component or a microelectromechanical system, placed above an electronic chip, and the corresponding fabrication process
    25.
    发明授权
    Integrated circuit comprising an auxiliary component, for example a passive component or a microelectromechanical system, placed above an electronic chip, and the corresponding fabrication process 有权
    包括放置在电子芯片上方的辅助部件，例如无源部件或微机电系统的集成电路，以及相应的制造工艺

    公开(公告)号：US06846690B2

    公开(公告)日：2005-01-25

    申请号：US10308482

    申请日：2002-12-03

    Applicant: Alexis Farcy ,  Philippe Coronel ,  Pascal Ancey ,  Joaquin Torres

    Inventor： Alexis Farcy ,  Philippe Coronel ,  Pascal Ancey ,  Joaquin Torres

    IPC: B81B7/00 ,  B81C3/00 ,  H01L21/00 ,  H01L21/30

    CPC classification number: B81C1/0023 ,  B29C2043/5825

    Abstract: The fabrication of an integrated circuit includes a first phase of producing an electronic chip and a second phase of producing at least one auxiliary component placed above the chip and of producing a protective cover which covers the auxiliary component. The first phase of producing the chip is effected from a first semiconductor substrate and comprises the formation of a cavity lying in a chosen region of the chip and emerging at the upper surface of the chip. The second production phase includes the production of the auxiliary component from a second semiconductor substrate, separate from the first, and then the placement in the cavity of the auxiliary component supported by the second substrate and the mutual adhesion of the second substrate to the upper surface of the chip lying outside the cavity. The second substrate then also forms the protective cover.

    Abstract translation: 集成电路的制造包括制造电子芯片的第一阶段和产生放置在芯片上方的至少一个辅助部件并产生覆盖辅助部件的保护盖的第二阶段。 制造芯片的第一阶段从第一半导体衬底实现，并且包括形成位于芯片的选定区域中并且出现在芯片的上表面处的空腔。 第二生产阶段包括从第二半导体衬底生产辅助部件，与第一半导体衬底分离，然后放置在由第二衬底支撑的辅助部件的空腔中，以及将第二衬底与上表面的相互粘合 的芯片位于腔外。 第二基板然后也形成保护盖。

    Support and decoupling structure for an acoustic resonator, acoustic resonator and corresponding integrated circuit
    28.
    发明授权
    Support and decoupling structure for an acoustic resonator, acoustic resonator and corresponding integrated circuit 有权
    声谐振器，声谐振器和相应的集成电路的支持和去耦结构

    公开(公告)号：US07391143B2

    公开(公告)日：2008-06-24

    申请号：US11731942

    申请日：2007-04-02

    Applicant: Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

    Inventor： Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

    IPC: H01L41/083

    CPC classification number: H03H9/175

    Abstract: An acoustic resonator assembly includes a layer of high-acoustic-impedance material and a layer of low-acoustic-impedance material made of a low-electrical-permittivity material. This assembly may support the resonator over an interconnect layer or act as a decoupling assembly between two active elements of the resonator. The assembly may alternatively include three low-acoustic impedance layers. Alternatively, the assembly may include three acoustic impedance layers wherein two of the layers are low acoustic impedance layers and the third layer has a higher acoustic impedance than the first two or alternatively is a high-acoustic impedance layer.

    Abstract translation: 声谐振器组件包括高声阻抗材料层和由低电容率材料制成的低声阻抗材料层。 该组件可以在互连层上支撑谐振器或者用作谐振器的两个有源元件之间的去耦组件。 组件可以替代地包括三个低声阻抗层。 或者，组件可以包括三个声阻抗层，其中两个层是低声阻抗层，并且第三层具有比前两个更高的声阻抗，或者备选地是高声阻抗层。

    Support and decoupling structure for an acoustic resonator, acoustic resonator and corresponding integrated circuit
    30.
    发明申请
    Support and decoupling structure for an acoustic resonator, acoustic resonator and corresponding integrated circuit 有权
    声谐振器，声谐振器和相应的集成电路的支持和去耦结构

    公开(公告)号：US20070182284A1

    公开(公告)日：2007-08-09

    申请号：US11731942

    申请日：2007-04-02

    Applicant: Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

    Inventor： Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

    IPC: H01L41/04

    CPC classification number: H03H9/175

    Abstract: An acoustic resonator assembly includes a layer of high-acoustic-impedance material and a layer of low-acoustic-impedance material made of a low-electrical-permittivity material. This assembly may support the resonator over an interconnect layer or act as a decoupling assembly between two active elements of the resonator. The assembly may alternatively include three low-acoustic impedance layers. Alternatively, the assembly may include three acoustic impedance layers wherein two of the layers are low acoustic impedance layers and the third layer has a higher acoustic impedance than the first two or alternatively is a high-acoustic impedance layer.

    Abstract translation: 声谐振器组件包括高声阻抗材料层和由低电容率材料制成的低声阻抗材料层。 该组件可以在互连层上支撑谐振器或者用作谐振器的两个有源元件之间的去耦组件。 组件可以替代地包括三个低声阻抗层。 或者，组件可以包括三个声阻抗层，其中两个层是低声阻抗层，并且第三层具有比前两个更高的声阻抗，或者备选地是高声阻抗层。

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