公开(公告)号：US20200303616A1

公开(公告)日：2020-09-24

申请号：US16823206

申请日：2020-03-18

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: H01L39/24 ,  H01L39/12 ,  H01L39/22 ,  C23C14/34 ,  C23C14/54

Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

公开(公告)号：US12249489B2

公开(公告)日：2025-03-11

申请号：US18131997

申请日：2023-04-07

Applicant: Applied Materials, Inc.

Inventor： Yue Chen ,  Jinyu Lu ,  Yongmei Chen ,  Jinxin Fu ,  Zihao Yang ,  Mingwei Zhu ,  Takashi Kuratomi ,  Rami Hourani ,  Ludovic Godet ,  Qun Jing ,  Jingyi Yang ,  David Masayuki Ishikawa

IPC: H01J37/32 ,  H01J7/02

Abstract: A method of processing an optical device is provided, including: positioning an optical device on a substrate support in an interior volume of a process chamber, the optical device including an optical device substrate and a plurality of optical device structures formed over the optical device substrate, each optical device structure including a bulk region formed of silicon carbide and one or more surface regions formed of silicon oxycarbide. The method further includes providing one or more process gases to the interior volume of the process chamber, and generating a plasma of the one or more process gases in the interior volume for a first time period when the optical device is on the substrate support, and stopping the plasma after the first time period. A carbon content of the one or more surface regions of each optical device structure is reduced by at least 50% by the plasma.

公开(公告)号：US12185643B2

公开(公告)日：2024-12-31

申请号：US18177096

申请日：2023-03-01

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H10N60/85 ,  G02B6/12 ,  H10N60/12

Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US12096701B2

公开(公告)日：2024-09-17

申请号：US18200388

申请日：2023-05-22

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H10N60/01

CPC classification number: H10N60/0241 ,  H10N60/0156

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US20230345846A1

公开(公告)日：2023-10-26

申请号：US18177096

申请日：2023-03-01

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H10N60/85 ,  H10N60/12

CPC classification number: H10N60/85 ,  H10N60/12 ,  G02B6/12

Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US20230329125A1

公开(公告)日：2023-10-12

申请号：US18200388

申请日：2023-05-22

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H10N60/01

CPC classification number: H10N60/0241 ,  H10N60/0156

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US20230309420A1

公开(公告)日：2023-09-28

申请号：US18315459

申请日：2023-05-10

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Nag B. Patibandla ,  Nir Yahav ,  Robert Jan Visser ,  Adi de la Zerda

IPC: H10N60/85 ,  G02B6/10 ,  G01J1/44

CPC classification number: H10N60/85 ,  G02B6/107 ,  G01J1/44 ,  G01J2001/442

Abstract: A superconducting nanowire single photon detector (SNSPD) device includes a substrate having a top surface, an optical waveguide on the top surface of the substrate to receive light propagating substantially parallel to the top surface of the substrate, a seed layer of metal nitride on the optical waveguide, and a superconductive wire on the seed layer. The superconductive wire is a metal nitride different from the metal nitride of the seed layer and is optically coupled to the optical waveguide.

公开(公告)号：US11739418B2

公开(公告)日：2023-08-29

申请号：US16823182

申请日：2020-03-18

Applicant: Applied Materials, Inc

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: C23C14/34 ,  C23C14/56 ,  C23C14/06 ,  H01J37/34

CPC classification number: C23C14/564 ,  C23C14/0641 ,  C23C14/34 ,  H01J37/3405 ,  H01J37/3441 ,  H01J37/3464 ,  H01J2237/24514

Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.

公开(公告)号：US20230263075A1

公开(公告)日：2023-08-17

申请号：US17898880

申请日：2022-08-30

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Lan Yu ,  Zhebo Chen ,  Robert Jan Visser ,  Nag Patibandla

IPC: H01L39/24 ,  H01L39/02 ,  G06N10/40

CPC classification number: H01L39/2493 ,  G06N10/40 ,  H01L39/025

Abstract: Exemplary methods of fabricating high quality quantum computing components are described. The methods include removing native oxide from a deposition surface of a silicon substrate in a cleaning chamber of a processing system, and transferring the silicon substrate under vacuum to a deposition chamber of the processing system. The methods further include depositing an aluminum layer on the deposition surface of the silicon substrate in the deposition chamber, where an interface between the aluminum layer and the deposition surface of the silicon substrate is oxygen free.

公开(公告)号：US11600761B2

公开(公告)日：2023-03-07

申请号：US17178187

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H01L39/12 ,  H01L39/22 ,  G02B6/12

Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.