DRY TREATMENT FOR SURFACE LOSS REMOVAL IN MICRO-LED STRUCTURES

    公开(公告)号:US20230361242A1

    公开(公告)日:2023-11-09

    申请号:US17736843

    申请日:2022-05-04

    CPC classification number: H01L33/0095 H01L25/0753 H01L33/0075

    Abstract: A mesa etch may form the geometry of microLED structures. However, the mesa etch may induce defects in the microLED structures that decreases the efficiency of the microLEDs. To correct these defects, a dry etch process may be performed that incrementally removes the surface layers of the microLED structures with the defects. The dry etch may be configured to incrementally remove a small outer layer, and thus may preserve the overall shape of the microLED structures while leaving a smooth surface for the application of a dielectric layer. The dry etch process may include two steps that are repeatedly performed. A first gas may react with the surface to form a gallium compound layer, and a second gas may then selectively remove that layer. The dry etch may include plasma-based etches or reactive thermal etches.

    Oxide and metal removal
    28.
    发明授权

    公开(公告)号:US10465294B2

    公开(公告)日:2019-11-05

    申请号:US15095342

    申请日:2016-04-11

    Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

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