公开(公告)号：US20210013153A1

公开(公告)日：2021-01-14

申请号：US16070271

申请日：2017-12-14

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qi Yao ,  Zhanfeng Cao ,  Feng Zhang ,  Jiushi Wang

IPC: H01L23/552 ,  H01L27/12

Abstract: In embodiments of the present disclosure, there is provided a display substrate assembly including: a base substrate; a light shielding layer on the base substrate; and an active layer of a thin film transistor, above the base substrate. An orthographic projection of the active layer on the base substrate in a thickness direction of the base substrate is within an orthographic projection of the light shielding layer on the base substrate in the thickness direction of the base substrate, and the light shielding layer includes an ion-doped amorphous silicon layer. In embodiments of the present disclosure, there is also provided a method of manufacturing a display substrate assembly and a display apparatus including the display substrate assembly.

公开(公告)号：US12183824B2

公开(公告)日：2024-12-31

申请号：US17611156

申请日：2021-01-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie Huang ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Fengjuan Liu ,  Nianqi Yao ,  Kun Zhao ,  Tianmin Zhou ,  Jiushi Wang ,  Zhongpeng Tian

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1368

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

公开(公告)号：US20240234381A9

公开(公告)日：2024-07-11

申请号：US17769825

申请日：2021-06-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xinhong Lu ,  Xiaoyan Zhu ,  Chao Liu ,  Shuilang Dong ,  Jiushi Wang ,  Liuqing Li

IPC: H01L25/075 ,  H01L25/16 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L25/167 ,  H01L33/62 ,  H01L2933/0066

Abstract: A driving substrate, a light-emitting apparatus and a manufacturing method thereof, a splicing display apparatus, the driving substrate includes: a device disposing area, a bending area and a bonding area, the bending area is located between the device disposing area and the bonding area; the driving substrates located in the device disposing area, the bending area, and the bonding area include a buffer layer, a first conductive layer and a flexible dielectric layer that are stacked in sequence; the driving substrates located in the device disposing area and the bonding area further include a base plate disposed at a side of the buffer layer away from the first conductive layer, and a second conductive layer disposed at a side of the flexible dielectric layer away from the first conductive layer; and the driving substrate located in the bending area is configured to be able to bend along a bending axis.

公开(公告)号：US11495623B2

公开(公告)日：2022-11-08

申请号：US16772272

申请日：2019-12-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yanan Niu ,  Kuanjun Peng ,  Jiushi Wang ,  Zhanfeng Cao ,  Feng Zhang ,  Qi Yao ,  Wusheng Li ,  Feng Guan ,  Lei Chen ,  Jintao Peng ,  Tingting Zhou

IPC: H01L27/12

Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display device. In the display substrate of the present disclosure, a first transistor comprises a first gate electrode, a first electrode, a second electrode, and a first active layer; and a second transistor comprises a second gate electrode, a third electrode, a fourth electrode, and a second active layers, wherein the first active layer comprises a silicon material, the second active layer comprises an oxide semiconductor material, and wherein the third electrode and the first gate electrode are disposed in the same layer, and the fourth electrode and the first electrode, the second electrodes are disposed in the same layer.

公开(公告)号：US20220059631A1

公开(公告)日：2022-02-24

申请号：US17416417

申请日：2020-11-11

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yongfeng Zhang ,  Xue Dong ,  Zhiqiang Jiao ,  Lei Zhao ,  Jiushi Wang

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: Disclosed are a preparation method of a display panel, a display panel and a displaying device. The display panel comprises a plurality of first-color subpixels, and each first-color subpixel comprises a base, the base comprising a first driving electrode and a second driving electrode; a flat layer disposed on the side, near the first driving electrode and the second driving electrode, of the base; a patterned passivation layer and at least one first electrode disposed on the side, away from the base, of the flat layer, the first electrode being connected with the first driving electrode through via holes penetrating the flat layer; and at least one second electrode disposed on the side, away from the base, of the passivation layer, the second electrode being connected with the second driving electrode through via holes penetrating the passivation layer and the flat layer.

公开(公告)号：US11171159B2

公开(公告)日：2021-11-09

申请号：US16630657

申请日：2019-01-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanan Niu ,  Jiushi Wang ,  Lei Chen ,  Hongwei Tian ,  Zhanfeng Cao ,  Feng Guan ,  Feng Zhang ,  Shi Shu ,  Kuanjun Peng ,  Yichi Zhang ,  Qi Qi

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L27/32

Abstract: The present disclosure provides a display backplane and a method for manufacturing the same, a display panel, and a display device. The display backplane includes: a substrate; a first thin film transistor located on one side of the substrate; and a second thin film transistor located on the one side of the substrate, wherein: the first thin film transistor comprises a first active layer, the second thin film transistor comprises a second active layer, wherein the first active layer and the second active layer are located in a same layer, and a material of the first active layer is different from that of the second active layer.

公开(公告)号：US10923512B2

公开(公告)日：2021-02-16

申请号：US15956465

申请日：2018-04-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qingzhao Liu ,  Jiushi Wang ,  Da Lu

IPC: H01L27/12 ,  H01L29/40 ,  H01L21/3215 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423

Abstract: The embodiments of the present disclosure provide an array substrate, a preparation method thereof, and a display device. The preparation method of an array substrate comprises: forming the active layer, a gate insulating layer, the gate metal layer and the patterned photoresist sequentially on a substrate; forming a gate electrode transition pattern by etching a gate metal layer via a patterned photoresist, using a wet etching process and a dry etching process sequentially; and doping an area of the active layer not sheltered by the gate electrode transition pattern with ions to form a heavily doped area of the active layer.

公开(公告)号：US10483129B2

公开(公告)日：2019-11-19

申请号：US15717527

申请日：2017-09-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jing Feng ,  Seung Jin Choi ,  Fangzhen Zhang ,  Wusheng Li ,  Zhijun Lv ,  Ce Ning ,  Jiushi Wang

IPC: H01L21/4763 ,  H01L21/027 ,  H01L29/66 ,  H01L29/786 ,  G03F7/00 ,  H01L27/12 ,  G03F7/38 ,  G03F7/20 ,  G03F7/40 ,  H01L21/321

Abstract: The disclosure discloses a method for roughening a surface of a metal layer, a thin film transistor, and a method for fabricating the same. The method for roughening the surface of a metal layer includes: forming a first photo-resist layer on the surface of the metal layer, and processing the first photo-resist layer at high temperature; and stripping the first photo-resist layer to roughen the surface of the metal layer.

公开(公告)号：US10468271B2

公开(公告)日：2019-11-05

申请号：US16108185

申请日：2018-08-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingzhao Liu ,  Jiushi Wang ,  Lei Zhao

IPC: H01L21/321 ,  H01L21/3213 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423

Abstract: A dry etching method, including: etching a silicon-containing thin film with a first gas by a first preset thickness; etching the silicon-containing thin film with a second gas by a second preset thickness, to remove etching residues generated after etching the silicon-containing thin film by the first preset thickness; after the etching residues are removed, etching the silicon-containing thin film with the first gas by a third preset thickness, which is less than the first preset thickness; wherein the first gas includes chlorine gas, and the second gas includes fluoride gas.

公开(公告)号：US20190051677A1

公开(公告)日：2019-02-14

申请号：US15956465

申请日：2018-04-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qingzhao Liu ,  Jiushi Wang ,  Da Lu

IPC: H01L27/12 ,  H01L29/40 ,  H01L29/423 ,  H01L27/092 ,  H01L29/06 ,  H01L21/3215

Abstract: The embodiments of the present disclosure provide an array substrate, a preparation method thereof, and a display device. The preparation method of an array substrate comprises: forming the active layer, a gate insulating layer, the gate metal layer and the patterned photoresist sequentially on a substrate; forming a gate electrode transition pattern by etching a gate metal layer via a patterned photoresist, using a wet etching process and a dry etching process sequentially; and doping an area of the active layer not sheltered by the gate electrode transition pattern with ions to form a heavily doped area of the active layer.