摘要:
A method and circuitry for improved write latency tracking in a SDRAM is disclosed. In one embodiment, a delay locked loop is used in the command portion of the write path, and receives the system clock as its reference input. The DLL includes a modeled delay which models the delay in transmission of the internal Write Valid signal and system clock distribution to the deserializers in the data path portion of the write path, which is otherwise controlled by the intermittently asserted write strobe signal. With the input distribution delay of the system clock (Clk) and the write strobe (WS) matched by design, the distributed system clock and Write Valid signal are synchronized to the WS distribution path by means of the DLL delay with reference to the system clock input to the DLL. By backing the distribution delay out of system clock as sent to the deserializers, the write valid signal is effectively synchronized with the write strobe, with the effect that data will be passed out of the deserializer circuitry to the memory array on time and consistent with the programmed write latency.
摘要:
A method and apparatus for synchronizing signals. For devices, such as memory devices, implementing a synchronization device to synchronize signals, a synchronization device having a delay locked loop coupled to a phase locked loop may be implemented. The delay locked loop is implemented to measure the period of a reference signal and to mirror the period into a second delay line such that an adjusted reference signal having a frequency approximately equal to the frequency of the reference clock may be generated. The adjusted reference signal is delivered to an oscillator such that the oscillator begins oscillating at approximately the same frequency as the reference clock signal to provide a fast locking synchronization device.
摘要:
An apparatus for synchronizing signals. For devices, such as memory devices, implementing a synchronization device to synchronize signals, a synchronization device having a delay locked loop coupled to a phase locked loop may be implemented. The delay locked loop is implemented to measure the period of a reference signal and to mirror the period into a second delay line such that an adjusted reference signal having a frequency approximately equal to the frequency of the reference clock may be generated. The adjusted reference signal is delivered to an oscillator such that the oscillator begins oscillating at approximately the same frequency as the reference clock signal to provide a fast locking synchronization device.
摘要:
A method and apparatus for synchronizing signals. For devices, such as memory devices, implementing a synchronization device to synchronize signals, a synchronization device having a delay locked loop coupled to a phase locked loop may be implemented. The delay locked loop is implemented to measure the period of a reference signal and to mirror the period into a second delay line such that an adjusted reference signal having a frequency approximately equal to the frequency of the reference clock may be generated. The adjusted reference signal is delivered to an oscillator such that the oscillator begins oscillating at approximately the same frequency as the reference clock signal to provide a fast locking synchronization device.
摘要:
A method of controlling the output of data from a memory device includes deriving from an external clock signal a read clock and a control clock for operating an array of storage cells, both the read clock and the control clock each being comprised of clock pulses. A value is preloaded into one or both of a first counter located in the read clock domain and a second counter located in the control clock domain such that the difference in starting counts between the two counters is equal to a column address strobe latency (L) minus a synchronization (SP) overhead. A start signal is generated for initiating production of a running count of the read clock pulses in the first counter. The input of the start signal to the second counter is delayed so as to delay the initiation of a running count of the control clock pulses. A value of the second counter is held in response to a read command. The held value of the second counter is compared to a running count of the first counter; and data is output from the memory device with the read clock signal in response to the comparing.
摘要:
A method of synchronizing counters in two different clock domains within a memory device is comprised of generating a start signal for initiating production of a running count of clock pulses of a read clock signal in a first counter downstream of a locked loop and delaying the input of the start signal to a second counter upstream of the locked loop to delay the initiation of a running count of control clock pulses by an amount equal to a predetermined delay. Another disclosed method is for controlling the output of data from a memory device comprising deriving from an external clock signal a control clock for operating an array of storage cells and a read clock, both the control clock and the read clock being comprised of clock pulses. A start signal is generated for initiating production of a running count of the read clock pulses in a first counter. The start signal may be produced when a locked loop achieves a lock between the read clock and the control clock. The input of the start signal to a second counter is delayed to delay the initiation of a running count of the control clock pulses. The delay, which may be expressed as an integer number of clock cycles, may be equal to an input/output delay of the memory device. The method may be modified by inputting the start signal to an offset counter before initiating the production of the running count of the read clock pulses in the first counter. The offset counter may be loaded with a value equal to a programmed latency less a synchronization overhead. Once the running counts are initiated, each time a read command is received, a then current value of the running count of control clock pulses from the second counter is latched or held. The held value is compared to the running count of read clock pulses from the first counter, with the read clock signal being used to output data in response to the comparison. Apparatus for implementing the disclosed methods are also disclosed. Because of the rules governing abstracts, this abstract should not be used to construe the claims.
摘要:
A memory device is operable in either a high mode or a low speed mode. In either mode, 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.
摘要:
A method of synchronizing counters in two different clock domains within a memory device is comprised of generating a start signal for initiating production of a running count of clock pulses of a read clock signal in a first counter downstream of a locked loop and delaying the input of the start signal to a second counter upstream of the locked loop to delay the initiation of a running count of control clock pulses by an amount equal to a predetermined delay. Another disclosed method is for controlling the output of data from a memory device comprising deriving from an external clock signal a control clock for operating an array of storage cells and a read clock, both the control clock and the read clock being comprised of clock pulses. A start signal is generated for initiating production of a running count of the read clock pulses in a first counter. The start signal may be produced when a locked loop achieves a lock between the read clock and the control clock. The input of the start signal to a second counter is delayed to delay the initiation of a running count of the control clock pulses. The delay, which may be expressed as an integer number of clock cycles, may be equal to an input/output delay of the memory device. The method may be modified by inputting the start signal to an offset counter before initiating the production of the running count of the read clock pulses in the first counter. The offset counter may be loaded with a value equal to a programmed latency less a synchronization overhead. Once the running counts are initiated, each time a read command is received, a then current value of the running count of control clock pulses from the second counter is latched or held. The held value is compared to the running count of read clock pulses from the first counter, with the read clock signal being used to output data in response to the comparison. Apparatus for implementing the disclosed methods are also disclosed. Because of the rules governing abstracts, this abstract should not be used to construe the claims.
摘要:
A method and system for generating a reference voltage for memory device signal receivers operates in either a calibration mode or a normal operating mode. In the calibration mode, the magnitude of the reference voltage is incrementally varied, and a digital signal pattern is coupled to the receiver at each reference voltage. An output of the receiver is analyzed to determine if the receiver can accurately pass the signal pattern at each reference voltage level. A range of reference voltages that allow the receiver to accurately pass the signal pattern is recorded, and a final reference voltage is calculated at the approximate midpoint of the range. This final reference voltage is applied to the receiver during normal operation.
摘要:
A system and memory including a circuit for setting write latency and a write/valid indicator. Time margin regions are established just after the first or leading edge and just before the second or following edge of the preamble of the clock signal such that a latency setting will be found unacceptable if it causes a write enable signal to transition in either of these regions. A write/valid indicator circuit creates the start and end time margin regions by delaying either the clock signal or the write enable signal and comparing their timing with the timing of the undelayed write enable signal or clock signal respectively.