公开(公告)号：US20120169315A1

公开(公告)日：2012-07-05

申请号：US13152245

申请日：2011-06-02

Applicant: Chien-Liang Lin ,  Chih-Hsueh Hsu

Inventor： Chien-Liang Lin ,  Chih-Hsueh Hsu

IPC: G05F1/618

CPC classification number: H02M3/156 ,  H02M2001/0003

Abstract: Control method and power controller suitable for a switched mode power supply with a power switch are provided. An ON time of the power switch is recorded. An estimated OFF time is provided based on the ON time. The estimated OFF time is in positive correlation with the ON time. The power switch is turned ON after the elapse of the estimated OFF time.

Abstract translation: 提供适用于带有电源开关的开关电源的控制方法和电源控制器。 记录电源开关的接通时间。 基于接通时间提供估计的关闭时间。 估计OFF时间与ON时间正相关。 经过预估的关闭时间后，电源开关打开。

公开(公告)号：US20110229284A1

公开(公告)日：2011-09-22

申请号：US12930412

申请日：2011-01-07

Applicant: David Hui ,  Chien-Liang Lin

Inventor： David Hui ,  Chien-Liang Lin

IPC: F16B33/00

CPC classification number: F16B23/0038

Abstract: An anti-wearing nut or bolt including a plurality of polygonal sides circumferentially formed on a head portion of the nut or bolt and; each polygonal side including: two inclined sub-sides respectively inclined outwardly convergently from opposite apexes of each polygonal side, each inclined sub-side extrapolatively defining a small biasing acute angle between each inclined sub-side and a corresponding socket side, and an intermediate sub-side transversely intersecting the two inclined sub-sides; whereby upon a clockwise or counter-clockwise rotation of the socket, one inclined sub-side of the nut or bolt will be planarly engaged with each socket side, without being linearly bitten or dogged, to thereby prevent wearing or damage of the apexes of the nut or bolt.

Abstract translation: 一种防磨损螺母或螺栓，包括周向形成在螺母或螺栓的头部上的多个多边形; 每个多边形侧包括：分别从每个多边形侧面的相对顶点向外收敛地倾斜的两个倾斜子侧，每个倾斜子侧在每个倾斜子侧和相应的插座侧之间外推定义小的偏压锐角，以及中间子 与横向相交的两个倾斜的副边; 由此，当插座的顺时针或逆时针旋转时，螺母或螺栓的一个倾斜的副侧面将与每个插座侧面平面地接合，而不会被线性咬合或阻塞，从而防止其中的顶点的磨损或损坏 螺母或螺栓。

公开(公告)号：US20090187735A1

公开(公告)日：2009-07-23

申请号：US12357779

申请日：2009-01-22

Applicant: Chien-Liang Lin ,  Wen-Hsiang Huang ,  Hao-Jan Chen

Inventor： Chien-Liang Lin ,  Wen-Hsiang Huang ,  Hao-Jan Chen

IPC: G06F15/76 ,  G06F9/02

CPC classification number: G06F15/7814

Abstract: A microcontroller having dual-core architecture is provided. Using a unique hardware configuration of memories, control registers and reset machines, the invention not only reduces hardware cost, but also improves management efficiency and system stability.

Abstract translation: 提供了具有双核架构的微控制器。 使用存储器，控制寄存器和复位机的独特硬件配置，本发明不仅降低了硬件成本，而且提高了管理效率和系统稳定性。

公开(公告)号：US20070180602A1

公开(公告)日：2007-08-09

申请号：US11348319

申请日：2006-02-07

Applicant: Chien-Liang Lin

Inventor： Chien-Liang Lin

IPC: E03C1/26 ,  A47K1/14

CPC classification number: E03C1/23 ,  E03C1/262

Abstract: A drain assembly includes a cup connected to the sink and having an extension tube. A seal and an urging ring are mounted to the cup from the underside of the cup. A positioning plate is fixed to the cup and the extension tube extends through a central hole of the positioning plate. A plurality of bolts extend through the positioning plate and contact against the urging ring. A filtering seal device is connected to the cup. A connector is fixed to the extension tube and a positioning member is threadedly connected to the extension tube of the cup. The positioning member is engaged with the central hole of the positioning plate. By the engagement of the positioning member and the positioning plate, the assembler can quickly position the drain assembly.

Abstract translation: 排水组件包括连接到水槽并具有延伸管的杯。 密封件和推动环从杯的下侧安装到杯子上。 定位板固定在杯子上，延伸管延伸穿过定位板的中心孔。 多个螺栓延伸穿过定位板并抵靠推动环。 过滤密封装置连接到杯子。 连接器固定到延伸管上，并且定位构件螺纹地连接到杯的延伸管。 定位构件与定位板的中心孔接合。 通过定位构件和定位板的接合，组装者可以快速地定位排水组件。

公开(公告)号：US08921238B2

公开(公告)日：2014-12-30

申请号：US13235515

申请日：2011-09-19

Applicant: Shao-Wei Wang ,  Yu-Ren Wang ,  Chien-Liang Lin ,  Wen-Yi Teng ,  Tsuo-Wen Lu ,  Chih-Chung Chen ,  Ying-Wei Yen

Inventor： Shao-Wei Wang ,  Yu-Ren Wang ,  Chien-Liang Lin ,  Wen-Yi Teng ,  Tsuo-Wen Lu ,  Chih-Chung Chen ,  Ying-Wei Yen

IPC: H01L21/31 ,  H01L21/3105 ,  H01L21/02

CPC classification number: H01L21/3105 ,  H01L21/02148 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/0228

Abstract: A method for processing a high-k dielectric layer includes the following steps. A semiconductor substrate is provided, and a high-k dielectric layer is formed thereon. The high-k dielectric layer has a crystalline temperature. Subsequently, a first annealing process is performed, and a process temperature of the first annealing process is substantially smaller than the crystalline temperature. A second annealing process is performed, and a process temperature of the second annealing process is substantially larger than the crystalline temperature.

Abstract translation: 一种用于处理高k电介质层的方法包括以下步骤。 提供半导体衬底，并且在其上形成高k电介质层。 高k电介质层具有结晶温度。 随后，进行第一退火处理，并且第一退火工艺的处理温度显着小于结晶温度。 进行第二退火处理，第二退火处理的工艺温度显着大于结晶温度。

公开(公告)号：US08893154B2

公开(公告)日：2014-11-18

申请号：US12204780

申请日：2008-09-04

Applicant: Chien-Liang Lin

Inventor： Chien-Liang Lin

IPC: G06F3/00 ,  G06F9/44 ,  G06F9/46 ,  G06F13/00 ,  G06F9/54

CPC classification number: G06F9/54

Abstract: A mobile device and a method for sharing a hardware device thereof are provided. Two operation systems are executed on the present mobile device simultaneously, and an embedded controller is configured to communicate among the two operation systems and a shared hardware device of the mobile device. When one of the operation systems encodes an operating command into a uniform message and transmits the uniform message to the embedded controller, the uniform message is decoded into the operating command by the embedded controller such that the hardware device operates according to the decoded operating command. On the other hand, when the embedded controller receives input data from the hardware device, the embedded controller encodes the input data into the uniform message and transmits the uniform message to one of the operation systems. The operation system receiving the uniform message decodes the uniform message into the input data.

Abstract translation: 提供了一种用于共享其硬件设备的移动设备和方法。 两个操作系统同时在当前移动设备上执行，并且嵌入式控制器被配置为在两个操作系统和移动设备的共享硬件设备之间进行通信。 当操作系统中的一个操作系统将操作命令编码为均匀消息并将统一消息发送到嵌入式控制器时，由嵌入式控制器将均匀消息解码为操作命令，使得硬件设备根据解码的操作命令进行操作。 另一方面，当嵌入式控制器从硬件设备接收输入数据时，嵌入式控制器将输入数据编码成统一消息，并将统一消息发送到操作系统之一。 接收统一消息的操作系统将均匀消息解码为输入数据。

公开(公告)号：US08536038B2

公开(公告)日：2013-09-17

申请号：US13164781

申请日：2011-06-21

Applicant: Shao-Wei Wang ,  Yu-Ren Wang ,  Chien-Liang Lin ,  Wen-Yi Teng ,  Tsuo-Wen Lu ,  Chih-Chung Chen ,  Ying-Wei Yen ,  Yu-Min Lin ,  Chin-Cheng Chien ,  Jei-Ming Chen ,  Chun-Wei Hsu ,  Chia-Lung Chang ,  Yi-Ching Wu ,  Shu-Yen Chan

Inventor： Shao-Wei Wang ,  Yu-Ren Wang ,  Chien-Liang Lin ,  Wen-Yi Teng ,  Tsuo-Wen Lu ,  Chih-Chung Chen ,  Ying-Wei Yen ,  Yu-Min Lin ,  Chin-Cheng Chien ,  Jei-Ming Chen ,  Chun-Wei Hsu ,  Chia-Lung Chang ,  Yi-Ching Wu ,  Shu-Yen Chan

IPC: H01L21/3205 ,  H01L21/425

CPC classification number: H01L29/7833 ,  H01L21/265 ,  H01L21/3215 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659

Abstract: A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.

Abstract translation: 一种金属栅极的制造方法，包括提供具有至少形成有导电类型的半导体器件的衬底，在该半导体器件中形成栅极沟槽，形成具有导电类型的功函数金属层和对应于 栅极沟槽中的导电类型，并且执行离子注入以将功函数金属层的固有功函数调整到目标功函数。

公开(公告)号：US20130078818A1

公开(公告)日：2013-03-28

申请号：US13241232

申请日：2011-09-23

Applicant: Chien-Liang Lin ,  Shih-Hung Tsai ,  Chun-Hsien Lin ,  Te-Lin Sun ,  Shao-Wei Wang ,  Ying-Wei Yen ,  Yu-Ren Wang

Inventor： Chien-Liang Lin ,  Shih-Hung Tsai ,  Chun-Hsien Lin ,  Te-Lin Sun ,  Shao-Wei Wang ,  Ying-Wei Yen ,  Yu-Ren Wang

IPC: H01L21/31

CPC classification number: H01L21/3247 ,  H01L29/66795 ,  H01L29/7854

Abstract: A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and an oxide layer is formed on the substrate without the fin-shaped structure forming thereon. A thermal treatment process is performed to form a melting layer on at least a part of the sidewall of the fin-shaped structure.

Abstract translation: 半导体工艺包括以下步骤。 提供基板。 至少在基板上形成翅片状结构，在基板上形成氧化层，而不形成翅片状结构。 进行热处理工艺以在鳍状结构的侧壁的至少一部分上形成熔融层。

公开(公告)号：US20130072030A1

公开(公告)日：2013-03-21

申请号：US13235515

申请日：2011-09-19

Applicant: Shao-Wei Wang ,  Yu-Ren Wang ,  Chien-Liang Lin ,  Wen-Yi Teng ,  Tsuo-Wen Lu ,  Chih-Chung Chen ,  Ying-Wei Yen

Inventor： Shao-Wei Wang ,  Yu-Ren Wang ,  Chien-Liang Lin ,  Wen-Yi Teng ,  Tsuo-Wen Lu ,  Chih-Chung Chen ,  Ying-Wei Yen

IPC: H01L21/314

CPC classification number: H01L21/3105 ,  H01L21/02148 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/0228

Abstract: A method for processing a high-k dielectric layer includes the following steps. A semiconductor substrate is provided, and a high-k dielectric layer is formed thereon. The high-k dielectric layer has a crystalline temperature. Subsequently, a first annealing process is performed, and a process temperature of the first annealing process is substantially smaller than the crystalline temperature. A second annealing process is performed, and a process temperature of the second annealing process is substantially larger than the crystalline temperature.

Abstract translation: 一种用于处理高k电介质层的方法包括以下步骤。 提供半导体衬底，并且在其上形成高k电介质层。 高k电介质层具有结晶温度。 随后，进行第一退火处理，并且第一退火工艺的处理温度显着小于结晶温度。 进行第二退火处理，第二退火处理的工艺温度显着大于结晶温度。

公开(公告)号：US20130012012A1

公开(公告)日：2013-01-10

申请号：US13179558

申请日：2011-07-10

Applicant: Chien-Liang Lin ,  Yu-Ren Wang ,  Ying-Wei Yen ,  Shao-Wei Wang ,  Te-Lin Sun ,  Szu-Hao Lai ,  Po-Chun Chen ,  Chih-Hsun Lin ,  Che-Nan Tsai ,  Chun-Ling Lin ,  Chiu-Hsien Yeh

Inventor： Chien-Liang Lin ,  Yu-Ren Wang ,  Ying-Wei Yen ,  Shao-Wei Wang ,  Te-Lin Sun ,  Szu-Hao Lai ,  Po-Chun Chen ,  Chih-Hsun Lin ,  Che-Nan Tsai ,  Chun-Ling Lin ,  Chiu-Hsien Yeh

IPC: H01L21/28

CPC classification number: H01L21/268 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/324 ,  H01L21/3247 ,  H01L29/51

Abstract: A semiconductor process includes the following steps. A substrate having an oxide layer thereon is provided. A high temperature process higher than 1000° C. is performed to form a melting layer between the substrate and the oxide layer. A removing process is performed to remove the oxide layer and the melting layer.

Abstract translation: 半导体工艺包括以下步骤。 提供其上具有氧化物层的衬底。 进行高于1000℃的高温处理，以在基板和氧化物层之间形成熔融层。 进行去除处理以去除氧化物层和熔化层。