Frame lid for in-package optics
    21.
    发明授权

    公开(公告)号:US11029475B2

    公开(公告)日:2021-06-08

    申请号:US16522531

    申请日:2019-07-25

    Abstract: The present disclosure provides a frame lid assembly, which may be used in assembling an optical platform to provide isolated thermal conduction paths for various elements thereof. The frame lid assembly includes a first frame lid, including: a foot, disposed in a first plane; a roof, disposed in a second plane parallel to the first plane, the roof defining a port as a first through-hole that is perpendicular to the second plane; a wall, disposed obliquely to the first plane, separating the roof from the foot, the wall defining a slot as a second through-hole that is parallel to the first plane; a second frame lid connected to the first frame lid and thermally isolated from the first frame lid, the second frame lid including: a cap, connected to the roof via a thermal insulator; and a plug, extending perpendicularly from the cap through the port.

    Integrated decoupling capacitors
    23.
    发明授权

    公开(公告)号:US11810877B2

    公开(公告)日:2023-11-07

    申请号:US17454937

    申请日:2021-11-15

    Abstract: Embodiments herein describe providing a decoupling capacitor on a first wafer (or substrate) that is then bonded to a second wafer to form an integrated decoupling capacitor. Using wafer bonding means that the decoupling capacitor can be added to the second wafer without having to take up space in the second wafer. In one embodiment, after bonding the first and second wafers, one or more vias are formed through the second wafer to establish an electrical connection between the decoupling capacitor and bond pads on a first surface of the second wafer. An electrical IC can then be flip chipped bonded to the first surface. As part of coupling the decoupling capacitor to the electrical IC, the decoupling capacitor is connected between the rails of a power source (e.g., VDD and VSS) that provides power to the electrical IC.

    Connecting optical connector with co-packaged optical device

    公开(公告)号:US11555972B2

    公开(公告)日:2023-01-17

    申请号:US17303853

    申请日:2021-06-09

    Abstract: Aspects described herein include an apparatus supporting optical alignment with one or more optical waveguides optically exposed along an edge of a photonic integrated circuit (IC). The apparatus comprises a frame body comprising an upper portion defining a reference surface, and a lateral portion defining an interface for an optical connector connected with one or more optical fibers. The lateral portion comprises one or more optical components defining an optical path through the lateral portion. The one or more optical components are arranged relative to the reference surface such that the one or more optical components align with (i) the one or more optical waveguides along at least one dimension when the reference surface contacts a top surface of an anchor IC, and with (ii) the one or more optical fibers when the optical connector is connected at the interface.

    Silicon photonics platform with integrated oxide trench edge coupler structure

    公开(公告)号:US11480730B2

    公开(公告)日:2022-10-25

    申请号:US17304227

    申请日:2021-06-16

    Abstract: A method includes defining a first waveguide in a first region of an optical device over a first dielectric layer over a silicon on insulator (SOI) substrate of the optical device and disposing a second dielectric layer on the first waveguide and the first dielectric layer of the optical device. The method also includes defining a second region on the second dielectric layer, the first dielectric layer, and the SOI substrate. The second region includes an integrated trench structure defined in the SOI substrate. The method further includes etching the second region to form an etched second region, disposing a third dielectric layer in the etched second region, and disposing a second waveguide on at least the third dielectric layer. The second waveguide is disposed to provide an optical coupling between the second waveguide and the first waveguide.

    Selective-area growth of III-V materials for integration with silicon photonics

    公开(公告)号:US11018473B1

    公开(公告)日:2021-05-25

    申请号:US16203463

    申请日:2018-11-28

    Abstract: Embodiments provide for selective-area growth of III-V materials for integration with silicon photonics. The resulting platform includes a substrate; an insulator, extending a first distance from the substrate, including a passive optical component at a second distance from the substrate less than the first distance, and defining a pit extending to the substrate; and a III-V component, extending from the substrate within in the pit defined in the insulator, the III-V component including a gain medium included at the second distance from the substrate and optically coupled with the passive optical component. The pit may define an Optical Coupling Interface between the III-V component and the passive optical component, or a slit defined between the III-V component and the passive optical component may define the Optical Coupling Interface.

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