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21.发明申请SELF-REFERENCE MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL COMPRISING FERRIMAGNETIC LAYERS 有权自参考磁性随机存取存储器（MRAM）包含非易失性层的单元公开(公告)号：US20130083593A1
公开(公告)日：2013-04-04
申请号：US13625923
申请日：2012-09-25
申请人： Crocus Technology SA
CPC分类号： G11C11/16 , G11C11/00 , G11C11/1673 , G11C11/1675
摘要： MRAM cell comprising a magnetic tunnel junction comprising a storage layer having a net storage magnetization being adjustable when the magnetic tunnel junction is at a high temperature threshold and being pinned at a low temperature threshold; a sense layer having a reversible sense magnetization; and a tunnel barrier layer between the sense and storage layers; at least one of the storage and sense layer comprising a ferrimagnetic 3d-4f amorphous alloy material comprising a sub-lattice of 3d transition metals atoms providing a first magnetization and a sub-lattice of 4f rare-earth atoms providing a second magnetization, such that at a compensation temperature of said at least one of the storage layer and the sense layer, the first magnetization and the second magnetization are substantially equal. The disclosed MRAM cell can be written and read using a small writing and reading field, respectively.
摘要翻译： MRAM单元包括磁隧道结，其包括存储层，所述存储层具有当磁性隧道结处于高温阈值并被固定在低温阈值时可净化的净存储磁化; 具有可逆感测磁化的感测层; 以及感测层和存储层之间的隧道势垒层; 所述存储和感测层中的至少一个包括铁氧体3d-4f非晶合金材料，其包含提供第一磁化的3d过渡金属原子的子晶格和提供第二磁化的4f稀土原子的子晶格，使得 在所述存储层和感测层中的至少一个的补偿温度下，第一磁化强度和第二磁化强度基本相等。 可以分别使用小的写入和读取字段来写入和读取所公开的MRAM单元。
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22.发明授权公开(公告)号：US09754653B2
公开(公告)日：2017-09-05
申请号：US14438365
申请日：2013-10-11
申请人： CROCUS Technology SA
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1673 , G11C11/5607
摘要： Method for writing and reading a plurality of data bits to a magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a reference magnetic layer having a reference magnetization, a tunnel barrier layer, and a SAF storage magnetic layer including a first and second storage magnetization being coupled antiparallel through a storage coupling layer and freely orientable at a high temperature threshold. The method includes: heating the magnetic tunnel junction to the high temperature threshold; and applying a write magnetic field to orient the first and second storage magnetization; wherein the high temperature threshold includes one of a first or third high temperature threshold such as to orient the first storage magnetization respectively antiparallel or parallel to the second storage magnetization; or a second high temperature threshold such as to orient the first storage magnetization with an angle below 180° with respect to the second storage magnetization.
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23.发明授权Method for writing to a random access memory (MRAM) cell with improved MRAM cell lifespan 有权写入具有改进的MRAM单元寿命的随机存取存储器（MRAM）单元的方法公开(公告)号：US09396782B2
公开(公告)日：2016-07-19
申请号：US14405909
申请日：2013-06-07
申请人： CROCUS Technology SA
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/161
摘要： Method for writing to a MRAM cell including a magnetic tunnel junction including a first and second ferromagnetic layer, and a tunnel barrier layer; and a bipolar transistor in electrical connection with one end of the magnetic tunnel junction, the bipolar transistor being arranged for controlling the passing and polarity of a heating current in the magnetic tunnel junction. The method includes a sequence of writing steps, each writing step including passing the heating current in the magnetic tunnel junction such as to heat it to a high temperature threshold; and once the magnetic tunnel junction has reached the high temperature threshold, adjusting a second magnetization of the second ferromagnetic layer for writing a write data; wherein during one of the writing steps, the polarity of the heating current is reversed from one during the subsequent writing step. The method allows for an increased lifespan of the MRAM cell.
摘要翻译： 写入包括包括第一和第二铁磁层的磁性隧道结的MRAM单元和隧道势垒层的方法; 以及与磁性隧道结的一端电连接的双极晶体管，所述双极晶体管布置成用于控制磁性隧道结中的加热电流的通过和极性。 该方法包括写入步骤序列，每个写入步骤包括使加热电流传递到磁性隧道结中，以将其加热到高温阈值; 并且一旦磁性隧道结已经达到高温阈值，则调整用于写入写入数据的第二铁磁层的第二磁化强度; 其中在一个写入步骤期间，在随后的写入步骤期间加热电流的极性与一个相反。 该方法允许增加MRAM单元的使用寿命。
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公开(公告)号：US20160079516A1
公开(公告)日：2016-03-17
申请号：US14787957
申请日：2014-04-11
申请人： CROCUS TECHNOLOGY SA
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L43/08 , H01L43/10
摘要： MRAM cell including a magnetic tunnel junction including a reference layer, a storage layer having a storage magnetization, a tunnel barrier layer between the reference and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and free it at a high temperature threshold. The storage layer includes a first ferromagnetic layer in contact with the tunnel barrier layer, a second ferromagnetic layer in contact with the antiferromagnetic layer, and a low saturation magnetization storage layer including a ferromagnetic material and a non-magnetic material. The MRAM cell can be written with improved reliability.
摘要翻译： MRAM单元包括包括参考层的磁性隧道结，具有存储磁化的存储层，在参考和存储层之间的隧道势垒层; 以及反铁磁层将存储层交换耦合，例如以低温阈值来引导存储磁化，并将其在高温阈值下释放。 存储层包括与隧道势垒层接触的第一铁磁层，与反铁磁层接触的第二铁磁层和包含铁磁材料和非磁性材料的低饱和磁化存储层。 可以改善MRAM单元的可靠性。
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25.发明申请MAGNETORESISTIVE ELEMENT HAVING ENHANCED EXCHANGE BIAS AND THERMAL STABILITY FOR SPINTRONIC DEVICES 有权具有增强交换偏差的磁电元件和用于旋转装置的热稳定性公开(公告)号：US20150340597A1
公开(公告)日：2015-11-26
申请号：US14647632
申请日：2013-11-19
申请人： CROCUS Technology SA
CPC分类号： H01L43/08 , G11C11/161 , H01F10/3254 , H01F41/303 , H01L43/02
摘要： Magnetic element including a first magnetic layer having a first magnetization; a second magnetic layer having a second magnetization; a tunnel barrier layer between the first and the second magnetic layers; and an antiferromagnetic layer exchanged coupling the second magnetic layer such that the second magnetization is pinned below a critical temperature of the antiferromagnetic layer, and can be freely varied when the antiferromagnetic layer is heated above that critical temperature. The magnetic element also includes an oxygen gettering layer between the second magnetic layer and the antiferromagnetic layer, or within the second magnetic layer. The magnetic element has reduced insertion of oxygen atoms in the antiferromagnetic layer and possibly reduced diffusion of manganese in the second magnetic layer resulting in an enhanced exchange bias and/or enhanced resistance to temperature cycles and improved life-time.
摘要翻译： 磁性元件包括具有第一磁化的第一磁性层; 具有第二磁化强度的第二磁性层; 第一和第二磁性层之间的隧道势垒层; 并且反铁磁层交换耦合第二磁性层，使得第二磁化被固定在反铁磁层的临界温度以下，并且当反铁磁层被加热到高于该临界温度时，可以自由地改变。 磁性元件还包括在第二磁性层和反铁磁性层之间或在第二磁性层内的氧吸气层。 磁性元件减少了反铁磁层中的氧原子的插入，并且可能减少了第二磁性层中的锰的扩散，导致增强的交换偏压和/或增强的耐温度循环和改善的寿命。
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26.发明申请公开(公告)号：US20150302911A1
公开(公告)日：2015-10-22
申请号：US14647600
申请日：2013-11-19
申请人： CROCUS TECHNOLOGY SA
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , H01L43/02 , H01L43/08
摘要： A magnetic random access memory (MRAM) cell including a magnetic tunnel junction containing: a storage layer including at least one storage ferromagnetic layer, each storage ferromagnetic layer having a storage magnetization; an antiferromagnetic storage layer pinning the storage magnetization at a low threshold temperature and freeing them at a high temperature threshold; a reference layer; and a tunnel barrier layer between the reference layer and the storage layer. The magnetic tunnel junction also includes a free ferromagnetic layer having a free magnetization adapted to induce a magnetic stray field magnetically coupling the free ferromagnetic layer with the storage layer; such that the storage magnetization can be switched by the magnetic stray field when the magnetic tunnel junction is at the high temperature threshold. The disclosed MRAM cell has low power consumption.
摘要翻译： 一种包括磁性隧道结的磁性随机存取存储器（MRAM）单元，其包括：包含至少一个存储铁磁层的存储层，每个存储铁磁层具有存储磁化; 反铁磁存储层将存储磁化固定在低阈值温度并在高温阈值下释放它们; 参考层; 以及在参考层和存储层之间的隧道势垒层。 磁性隧道结还包括具有自由磁化强度的自由铁磁层，该自由磁化适于诱导将磁性磁性层与存储层磁耦合的磁性杂散磁场; 使得当磁性隧道结处于高温阈值时，存储磁化可以被磁性杂散场切换。 所公开的MRAM单元具有低功耗。
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27.发明申请METHOD FOR WRITING TO A RANDOM ACCESS MEMORY (MRAM) CELL WITH IMPROVED MRAM CELL LIFESPAN 有权用于改进MRAM细胞生物体的随机存取存储器（MRAM）细胞的方法公开(公告)号：US20150179245A1
公开(公告)日：2015-06-25
申请号：US14405909
申请日：2013-06-07
申请人： CROCUS Technology SA
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/161
摘要： Method for writing to a MRAM cell including a magnetic tunnel junction including a first and second ferromagnetic layer, and a tunnel barrier layer; and a bipolar transistor in electrical connection with one end of the magnetic tunnel junction, the bipolar transistor being arranged for controlling the passing and polarity of a heating current in the magnetic tunnel junction. The method includes a sequence of writing steps, each writing step including passing the heating current in the magnetic tunnel junction such as to heat it to a high temperature threshold; and once the magnetic tunnel junction has reached the high temperature threshold, adjusting a second magnetization of the second ferromagnetic layer for writing a write data; wherein during one of the writing steps, the polarity of the heating current is reversed from one during the subsequent writing step. The method allows for an increased lifespan of the MRAM cell.
摘要翻译： 写入包括包括第一和第二铁磁层的磁性隧道结的MRAM单元和隧道势垒层的方法; 以及与磁性隧道结的一端电连接的双极晶体管，所述双极晶体管布置成用于控制磁性隧道结中的加热电流的通过和极性。 该方法包括写入步骤序列，每个写入步骤包括使加热电流传递到磁性隧道结中，以将其加热到高温阈值; 并且一旦磁性隧道结已经达到高温阈值，则调整用于写入写入数据的第二铁磁层的第二磁化强度; 其中在一个写入步骤期间，在随后的写入步骤期间加热电流的极性与一个相反。 该方法允许增加MRAM单元的使用寿命。
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28.发明授权MRAM cell and method for writing to the MRAM cell using a thermally assisted write operation with a reduced field current 有权MRAM单元和使用具有减小的励磁电流的热辅助写入操作来写入MRAM单元的方法公开(公告)号：US08971102B2
公开(公告)日：2015-03-03
申请号：US13739044
申请日：2013-01-11
申请人： CROCUS Technology SA
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/161
摘要： The present disclosure concerns a method for writing to a MRAM cell comprising a magnetic tunnel junction formed from a storage layer having a storage magnetization; a reference layer having a reference magnetization; and a tunnel barrier layer included between the sense and storage layers; and a current line electrically connected to said magnetic tunnel junction; the method comprising: passing a heating current in the magnetic tunnel junction for heating the magnetic tunnel junction; passing a field current for switching the storage magnetization in a written direction in accordance with the polarity of the field current. The magnitude of the heating current is such that it acts as a spin polarized current and can adjust the storage magnetization; and the polarity of the heating current is such as to adjust the storage magnetization substantially towards said written direction.
摘要翻译： 本公开涉及一种用于写入到具有由具有存储磁化的存储层形成的磁性隧道结的MRAM单元的方法; 具有参考磁化的参考层; 以及包括在感测层和存储层之间的隧道势垒层; 以及电连接到所述磁性隧道结的电流线; 所述方法包括：使所述磁性隧道结中的加热电流通过以加热所述磁性隧道结; 根据励磁电流的极性，传递用于沿写入方向切换存储磁化的励磁电流。 加热电流的大小使得其作为自旋极化电流并且可以调节存储磁化强度; 并且加热电流的极性使得大致朝向所述写入方向调节存储磁化。
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公开(公告)号：US08885397B2
公开(公告)日：2014-11-11
申请号：US13683239
申请日：2012-11-21
申请人： Crocus Technology SA
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3263 , H01L43/08 , H01L43/12
摘要： Magnetic random access memory (MRAM) element suitable for a thermally-assisted write operation and for a self-referenced read operation, including a magnetic tunnel junction portion having a first portion and a second portion, each portion including a storage layer, a sense layer, and a tunnel barrier layer; the magnetic tunnel junction further including an antiferromagnetic layer between the two storage layers and pinning a storage magnetization of each of the storage layers below a critical temperature, and freeing them at and above the critical temperature; such that, during a write operation, a free magnetization of each of the sense layer is magnetically saturable according to a direction of a write magnetic field when applied; and the storage magnetizations are switchable in a direction substantially parallel and corresponding to the direction of the saturated free magnetizations.
摘要翻译： 适用于热辅助写入操作和自参考读取操作的磁性随机存取存储器（MRAM）元件，包括具有第一部分和第二部分的磁性隧道结部分，每个部分包括存储层，感测层 ，以及隧道势垒层; 磁隧道结还包括在两个存储层之间的反铁磁层，并将每个存储层的存储磁化固定在临界温度以下，并在临界温度和临界温度下释放它们; 使得在写入操作期间，每个感测层的自由磁化在施加时根据写入磁场的方向是磁性可饱和的; 并且存储磁化可以在基本平行的方向上切换并且对应于饱和自由磁化的方向。
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30.发明申请MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL, METHOD FOR WRITING AND READING THE MRAM CELL USING A SELF-REFERENCED READ OPERATION 审中-公开磁性随机访问存储器（MRAM）单元，使用自动读取操作来写入和读取MRAM单元的方法公开(公告)号：US20130077390A1
公开(公告)日：2013-03-28
申请号：US13622513
申请日：2012-09-19
申请人： Crocus Technology SA
CPC分类号： G11C11/1673 , G11C11/16 , G11C11/161
摘要： The present disclosure concerns a magnetic random access memory (MRAM) cell comprising a magnetic tunnel junction comprising a synthetic storage layer; a sense layer having a sense magnetization that is reversible; and a tunnel barrier layer between the sense layer and the storage layer; wherein a net local magnetic stray field couples the storage layer with the sense layer; and wherein the net local magnetic stray field being such that the net local magnetic stray field coupling the sense layer is below 50 Oe. The disclosure also pertains to a method for writing and reading the MRAM cell. The disclosed MRAM cell can be written and read with lower consumption in comparison to conventional MRAM cells.
摘要翻译： 本公开涉及包括包含合成存储层的磁性隧道结的磁随机存取存储器（MRAM）单元; 具有可逆的感测磁化的感测层; 以及在感测层和存储层之间的隧道势垒层; 其中净局部磁性杂散场将所述存储层与所述感测层耦合; 并且其中净局部磁性杂散场使得耦合感测层的净局部磁性杂散场低于50Oe。 本公开还涉及用于写入和读取MRAM单元的方法。 与常规MRAM单元相比，可以以较低的消耗量写入和读取所公开的MRAM单元。
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