Signal arrival direction deducing device, signal arrival direction deducing method, and signal direction deducing program
    21.
    发明授权
    Signal arrival direction deducing device, signal arrival direction deducing method, and signal direction deducing program 失效
    信号到达方向推导装置,信号到达方向推导方法和信号方向推导程序

    公开(公告)号:US07436358B2

    公开(公告)日:2008-10-14

    申请号:US11662654

    申请日:2005-09-14

    申请人: Akira Tanaka

    发明人: Akira Tanaka

    摘要: A signal arrival direction deducing device capable of deducing the signal arrival direction even when a correlation matrix between input signals and noise correlation matrix are singular. A state is observed in which only noise is present and a state is observed in which a sound whose arrival direction is to be deduced. A short time Fourier transform is performed. Correlation matrix and an input signal correlation matrix are used to compute proper eigenvalues/proper eigenvectors and improper eigenvectors of the noise correlation matrix with respect to the input signal correlation matrix. A matrix for determining the complementary space component of the signal partial space is computed from the proper eigenvectors and the improper eigenvectors. An arrival direction search is made for the sound arrival direction using the matrix for determining the complementary space component of the signal partial space.

    摘要翻译: 即使输入信号和噪声相关矩阵之间的相关矩阵是奇异的,也能够推导信号到达方向的信号到达方向推导装置。 观察到只有噪声存在的状态,并且观察到其中将要推导出到达方向的声音的状态。 执行短时傅立叶变换。 相关矩阵和输入信号相关矩阵用于相对于输入信号相关矩阵计算噪声相关矩阵的适当特征值/适当的特征向量和不正确的特征向量。 从适当的特征向量和不正确的特征向量计算用于确定信号部分空间的互补空间分量的矩阵。 使用用于确定信号部分空间的互补空间分量的矩阵对声音到达方向进行到达方向搜索。

    Projector device, and photographing method and program of projected image
    22.
    发明授权
    Projector device, and photographing method and program of projected image 有权
    投影仪设备,投影图像的拍摄方法和程序

    公开(公告)号:US07369762B2

    公开(公告)日:2008-05-06

    申请号:US11226952

    申请日:2005-09-15

    申请人: Akira Tanaka

    发明人: Akira Tanaka

    IPC分类号: G03B17/48 G03B7/00

    摘要: A protector device is provided which includes a projecting system, a photographing system, and a control section. The projecting system includes a light source lamp, a micromirror element, and a projecting lens, and each image for each of a plurality of color components is time-divided by use of a color wheel, projected, and displayed with respect to an input color image signal. The photographing system includes a photographing lens, a CCD, and a processing circuit in which the projected and displayed image is photographed in accordance with an instruction, when the photographing of the projected and displayed image is instructed. And the control section detects a rotation position of the color wheel with a marker sensor and controls the photographing system to execute the photographing in synchronization with a time division period for each color component in the projecting system.

    摘要翻译: 提供一种保护装置,其包括投影系统,拍摄系统和控制部。 投影系统包括光源灯,微镜元件和投影透镜,并且用于多个颜色分量中的每一个的每个图像通过使用色轮进行时分,相对于输入颜色被投影和显示 图像信号。 拍摄系统包括拍摄镜头,CCD,以及当指示投射和显示的图像的拍摄时,根据指示拍摄投射和显示的图像的处理电路。 并且控制部分利用标记传感器检测色轮的旋转位置,并且控制拍摄系统与投影系统中的每个颜色分量的时分时段同步地执行拍摄。

    NITRIDE-BASED SEMICONDUCTOR LASER DEVICE
    23.
    发明申请
    NITRIDE-BASED SEMICONDUCTOR LASER DEVICE 失效
    基于氮化物的半导体激光器件

    公开(公告)号:US20080069163A1

    公开(公告)日:2008-03-20

    申请号:US11841254

    申请日:2007-08-20

    申请人: Akira Tanaka

    发明人: Akira Tanaka

    IPC分类号: H01S5/22

    摘要: A nitride-based semiconductor laser device, includes: a first cladding layer of a first conductivity type; an active layer formed above the first cladding layer; an overflow-preventing layer of a second conductivity type formed on the active layer; and a second cladding layer of the second conductivity type formed above the overflow-preventing layer. The active layer includes three barrier layers and two well layers so that each well layer can be inserted between the corresponding ones of the three barrier layers and two of the three barrier layers are located on the outer sides of both well layers, thereby constituting a double-layered quantum well layer. The thickness of each well layer is set within a range of 2 to 5 nm.

    摘要翻译: 一种氮化物系半导体激光器件,包括:第一导电类型的第一包层; 形成在所述第一包层上方的有源层; 形成在有源层上的第二导电类型的溢出防止层; 以及形成在溢流防止层上方的第二导电类型的第二包覆层。 有源层包括三个阻挡层和两个阱层,使得每个阱层可以插入在三个阻挡层中的相应的一个之间,并且三个势垒层中的两个位于两个阱层的外侧,从而构成双重的 层数量子阱层。 每个阱层的厚度设定在2〜5nm的范围内。

    COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    24.
    发明申请
    COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    化合物半导体器件及其制造方法

    公开(公告)号:US20080061303A1

    公开(公告)日:2008-03-13

    申请号:US11850377

    申请日:2007-09-05

    IPC分类号: H01L29/20 H01L21/304

    摘要: A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a second side face, a third side face, and a fourth side face. The first and the second side faces are opposed to each other, substantially perpendicular to the major surface of the laminated body, made of cleaved surfaces. The third and the fourth side faces are perpendicular to the major surface and to the first and the second side faces, opposed to each other, and made of uncleaved surfaces. A groove is provided on the third side face, and the groove has a depth varied with position as viewed from the major surface, and has ends not reaching the first and second side face.

    摘要翻译: 化合物半导体器件包括具有晶体衬底和化合物半导体多层膜的层压体。 层叠体具有主表面,第一侧面,第二侧面,第三侧面和第四侧面。 第一和第二侧面彼此相对,基本上垂直于层叠体的主表面,由切割表面制成。 第三和第四侧面垂直于主表面,并且彼此相对并且由未切割的表面制成的第一和第二侧面。 在第三侧面设置有槽,并且,从主表面观察,槽的深度随着位置而变化,并且具有不到达第一和第二侧面的端部。

    Semiconductor laser device
    25.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号:US07333523B2

    公开(公告)日:2008-02-19

    申请号:US11484006

    申请日:2006-07-11

    IPC分类号: H01S5/00

    摘要: A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow blocking layer. The active layer includes a region having an impurity concentration is 3×1017 cm−3 or more and having a thickness of 30 nm or less between the overflow blocking layer and a well layer in the active layer closet to the overflow blocking layer.

    摘要翻译: 一种半导体激光装置,包括:第一导电类型的第一包层; 设置在所述第一包层上并具有量子阱结构的有源层; 设置在溢出阻挡层上的第二导电类型的溢出阻挡层。 有源层包括杂质浓度为3×10 -3 -3 -3以上并且在溢流阻挡层和阱层之间具有30nm或更小的厚度的区域 在活动层衣柜中到溢出阻挡层。

    Compiler apparatus, compiler method, and compiler program
    26.
    发明申请
    Compiler apparatus, compiler method, and compiler program 审中-公开
    编译器,编译器方法和编译程序

    公开(公告)号:US20070277162A1

    公开(公告)日:2007-11-29

    申请号:US11802636

    申请日:2007-05-24

    IPC分类号: G06F9/45

    CPC分类号: G06F8/4441

    摘要: A high-sped block is formed by generating and connecting a new basic block (contains an intermediate code obtained by performing variable replacing processing to a path replacement target variable of the intermediate code on a hot path of an original partial program and contains a branching intermediate code where a branching instruction on the hot path is converted so as to execute the hot path), and a basic block with an intermediate code for restoring value of path guarantee variable among the path replacement target variables to a value of an original variable. When an execution result of a conditional branching intermediate code is true, the speeding up of the original program is achieved through executing the basic block, and performing dependency analysis and dependency generation between the intermediate codes in the high-speed block and scheduling of the instructions.

    摘要翻译: 通过生成和连接新的基本块(包含通过对原始部分程序的热路径上的中间代码的路径替换目标变量执行可变替换处理而获得的中间代码)并且包含分支中间体 代码,其中热路径上的分支指令被转换以执行热路径),以及基本块,其具有用于将路径替换目标变量中的路径保证变量的值恢复为原始变量的值的中间代码。 当条件分支中间代码的执行结果为真时,通过执行基本块来实现原始程序的加速,并且在高速块中的中间代码和指令的调度之间执行依赖性分析和依赖关系生成 。

    Projector using lamp, method and program for controlling discharge lamp light source
    27.
    发明申请
    Projector using lamp, method and program for controlling discharge lamp light source 有权
    投影机使用灯泡,方法和程序控制放电灯光源

    公开(公告)号:US20070229777A1

    公开(公告)日:2007-10-04

    申请号:US11726133

    申请日:2007-03-21

    申请人: Akira Tanaka

    发明人: Akira Tanaka

    IPC分类号: G03B21/14

    摘要: A projector comprises an alternating-current-drive lamp, a rotating color wheel which includes color segments for transmitting color lights and is disposed in an optical path from the lamp, the color segments including a transparent segment, a projection unit configured to form an optical image by the color lights transmitted through the color wheel, and a light source control unit configured to raise a drive frequency of the lamp in a period in which the transparent segment of the color wheel is present in the optical path from the lamp.

    摘要翻译: 投影机包括交流驱动灯,旋转色轮,其包括用于传输彩色光的色段,并且设置在从灯的光路中,所述色段包括透明片段,投影单元被配置为形成光学 通过色轮传输的彩色图像的图像;以及光源控制单元,被配置为在来自灯的光路中存在色轮的透明段的时段内提高灯的驱动频率。

    Semiconductor laser device
    28.
    发明申请
    Semiconductor laser device 审中-公开
    半导体激光器件

    公开(公告)号:US20070158637A1

    公开(公告)日:2007-07-12

    申请号:US11347658

    申请日:2006-02-06

    申请人: Akira Tanaka

    发明人: Akira Tanaka

    IPC分类号: H01L31/00

    摘要: A semiconductor laser device comprises: a first cladding layer provided on a substrate, the first cladding layer being made of nitride semiconductor of a first conductivity type; an active layer provided on the first cladding layer, the active layer being made of a quantum well structure using nitride semiconductor; and a second cladding layer provided on the active layer, the second cladding layer having a ridge waveguide and being made of nitride semiconductor of a second conductivity type. The first cladding layer is made of AlZGa1-ZN having an aluminum composition ratio Z of 0.04 or less and has a thickness of not less than 1.6 μm.

    摘要翻译: 一种半导体激光器件,包括:第一包覆层,设置在基板上,所述第一包层由第一导电类型的氮化物半导体制成; 设置在所述第一包层上的有源层,所述有源层由使用氮化物半导体的量子阱结构构成; 以及设置在所述有源层上的第二覆层,所述第二覆层具有脊波导,并且由第二导电类型的氮化物半导体制成。 第一包层由铝组成比Z为0.04以下的Al z Ga 1-Z N N制成,厚度不小于1.6μm。

    Ornithine derivatives as prostaglandin e2 agonists or antagonists
    29.
    发明申请
    Ornithine derivatives as prostaglandin e2 agonists or antagonists 审中-公开
    鸟氨酸衍生物作为前列腺素e2激动剂或拮抗剂

    公开(公告)号:US20070142638A1

    公开(公告)日:2007-06-21

    申请号:US10584146

    申请日:2004-12-17

    IPC分类号: C07D215/38 C07D209/42

    摘要: Ornithine derivatives of the formula (I): wherein X is —CO— or —(CH2)k— (wherein k is 1, 2 or 3); Y is Z-(CH2)n—, and the like; {wherein Z is R1—CO—NR4—, and the like, (wherein R1 is aryl, and the like; and R4 is hydrogen, or lower alkyl); and n is 1, 2, 3, 4, 5 or 6}; R2 is aryl-(lower alkyl), and the like; R3 is -Q-R7, [wherein Q is —CO— or —SO2—, R is heterocyclyl], and the like; and R5 and R6 are independently hydrogen or lower alkyl; or a pharmaceutically acceptable salt thereof, which are useful as medicament.

    摘要翻译: 式(I)的鸟氨酸衍生物:其中X是-CO-或 - (CH 2 CH 2)n - (其中k是1,2或3); Y是Z-(CH 2)n - 等等; {其中Z是R 1 -CO-NR 4 - 等,(其中R 1是芳基等)和 R 4是氢或低级烷基); n为1,2,3,4,5或6}; R 2是芳基 - (低级烷基)等; R 3是-Q-R 7,[其中Q是-CO-或-SO 2 - ,R是杂环基]等; R 5和R 6独立地是氢或低级烷基; 或其药学上可接受的盐,其可用作药物。

    Semiconductor laser device
    30.
    发明申请
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号:US20070086497A1

    公开(公告)日:2007-04-19

    申请号:US11374072

    申请日:2006-03-14

    IPC分类号: H01S5/00

    摘要: A semiconductor laser device comprises: an active layer; a cladding layer of a first conductivity type; an insulating film; a first electrode ; and a pad electrode provided on the first electrode. The cladding layer is provided above the active layer, and has a ridge portion constituting a striped waveguide and non-ridge portions adjacent to both sides of the ridge portion. The insulating film is covering side faces of the ridge portion and an upper face of the non-ridge portions. The first electrode has a gap portion provided above the non-ridge portions. The pad electrode is provided on the first electrode.

    摘要翻译: 半导体激光器件包括:有源层; 第一导电类型的包覆层; 绝缘膜; 第一电极; 以及设置在第一电极上的焊盘电极。 包覆层设置在有源层上方,并且具有构成条纹波导的脊部和与脊部的两侧相邻的非脊部。 绝缘膜覆盖脊部的侧面和非脊部的上表面。 第一电极具有设置在非脊部之上的间隙部分。 焊盘电极设置在第一电极上。