摘要:
A high-sped block is formed by generating and connecting a new basic block (contains an intermediate code obtained by performing variable replacing processing to a path replacement target variable of the intermediate code on a hot path of an original partial program and contains a branching intermediate code where a branching instruction on the hot path is converted so as to execute the hot path), and a basic block with an intermediate code for restoring value of path guarantee variable among the path replacement target variables to a value of an original variable. When an execution result of a conditional branching intermediate code is true, the speeding up of the original program is achieved through executing the basic block, and performing dependency analysis and dependency generation between the intermediate codes in the high-speed block and scheduling of the instructions.
摘要:
To provide a compiler device that generates an executable program for a computer capable of executing two or more instructions in parallel, without using compensation code in trace scheduling. The compiler device generates the executable program that causes the computer to concurrently execute code which is a substantially direct translation of the source program, and code generated by optimizing a sequence of instructions of a most frequent execution path in the source program.
摘要:
A program for execution by a computer that includes a plurality of processor elements, the program comprising: a parallel execution program part to assign the plurality of processor elements one-to-one to a plurality of program parts so that the plurality of program parts are executed in parallel with each other; an execution history obtaining part to obtain and hold an execution history of each of the plurality of program parts; a parallel execution judgment part to judge whether or not to execute the plurality of program parts in parallel with each other, in accordance with the obtained execution history; and a processor element assignment control part to perform a control to determine whether to assign the plurality of processor elements to the plurality of program parts, depending on a result of the judgment made by the parallel execution judgment part.
摘要:
[Object] An object of the invention is to provide a toner that can both achieve a higher level of low temperature fixability and suppression of the toner scattering. [Means of Achieving the Object] The disclosure is to provide a toner, including base-particles, and an external-additive, wherein a glass-transition temperature obtained from a DSC-curve at a second-warming of a THF-insoluble component is −50° C. or higher and 10° C. or lower, wherein an average circularity of the toner is 0.975 or more and 0.985 or lower, wherein the toner satisfies the following formula: 1.5≤Bt−0.025−Ct≤3.0, wherein the Bt [m2/g] is a BET-specific-surface area of the toner-particles, and the Ct [%] is a coverage by the external-additive, and, at least a portion of a surface of the external-additive is coated with either an oxide of a metallic element, a hydroxide of the metallic element, or both.
摘要:
A toner is provided. The toner contains a polyester resin. The toner has a glass transition temperature (Tg1st) at first temperature rising of differential scanning calorimetry (DSC) of from 45° C. to 65° C. The toner includes a component insoluble in tetrahydrofuran (THF) having two glass transition temperatures (Tga1st and Tgb1st) at the first temperature rising of DSC, where Tga1st is in a range of −45° C. to 5° C. and Tgb1st is in a range of 45° C. to 70° C. The toner includes a component soluble in THF having a glass transition temperature (Tg2nd) at second temperature rising of DSC of from 40° C. to 65° C.
摘要:
A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.
摘要:
A communication sheet structure for transmitting electromagnetic waves, and thereby performing communication, is characterized in that the communication sheet structure includes a planar base material with a relative dielectric constant at a frequency of from 800 MHz to 10 GHz of from 1.0 to 15.0, and one side of the base material includes conductor A existing portion and non-existing portion, and the other side of the base material includes a conductor B existing over 90% or more thereof. The communication sheet structure enables communication in two dimensions, and the communication sheet structure is extremely excellent in communication performances.
摘要:
A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.
摘要:
A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the first conductivity type in each barrier layer of the multiple quantum well having a generally flat distribution or increasing toward the second layer, average of the impurity concentration in the barrier layer on the second layer side as viewed from each well layer of the multiple quantum well being equal to or greater than average of the impurity concentration in the barrier layer on the first layer side, and average of the impurity concentration in the barrier layer nearest to the second layer being higher than average of the impurity concentration in the barrier layer nearest to the first layer.
摘要:
According to one embodiment, a semiconductor chip mounting body, with an enhanced shock-resistance at portions of the bonding member corresponding to the corners of a semiconductor chip, is provided. The semiconductor chip mounting body includes a circuit board having a circuit pattern formed on a mounting surface thereof, a semiconductor chip mounted on the circuit pattern of the circuit board, and a bonding member arranged at least between the circuit board and the semiconductor chip, and on the sides of the semiconductor chip to fix the semiconductor chip on the circuit board. The bonding member contains thermosetting resin and magnetic powder dispersed in the thermosetting resin. The magnetic powder is locally disposed in portions of the bonding member which is located the corners of the semiconductor chip.