Triboelectric charge controlled electrostatic clamp
    22.
    发明授权
    Triboelectric charge controlled electrostatic clamp 有权
    摩擦电荷控制静电夹

    公开(公告)号:US09082804B2

    公开(公告)日:2015-07-14

    申请号:US13021838

    申请日:2011-02-07

    IPC分类号: H01L21/683

    CPC分类号: H01L21/6831

    摘要: An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.

    摘要翻译: 公开了一种在去除之前更有效地从衬底去除积聚电荷的静电夹。 目前,升降针和接地引脚是用于在植入后从衬底去除电荷的唯一机制。 本公开描述了一种静电卡盘,其中顶部电介质表面具有嵌入的导电区域,例如密封环中的环形导电区域。 因此,无论衬底在释放过程中的取向如何,衬底的至少一部分将在工件支撑体的电介质层上包含导电区域。 该导电区域可以通过使用电介质层中的导电通孔而连接到地。 在一些实施例中,这些导电通孔是用于向衬底的背侧供应气体的流体导管。

    Removing byproducts of physical and chemical reactions in an ion implanter
    24.
    发明授权
    Removing byproducts of physical and chemical reactions in an ion implanter 失效
    在离子注入机中除去物理和化学反应的副产物

    公开(公告)号:US07173260B2

    公开(公告)日:2007-02-06

    申请号:US11022060

    申请日:2004-12-22

    IPC分类号: G21G5/00 H01L21/76

    摘要: An ion implanter having a source, a workpiece support and a transport system for delivering ions from the source to an ion implantation chamber that contains the workpiece support. The implanter includes one or more removable inserts mounted to an interior of either the transport system or the ion implantation chamber for collecting material entering either the transport system or the ion implantation chamber due to collisions between ions and the workpiece within the ion implantation chamber during ion processing of the workpiece. A temperature control coupled to the one or more removable inserts for maintaining the temperature of the insert at a controlled temperature to promote formation of a film on said insert during ion treatment due to collisions between ions and said workpiece.

    摘要翻译: 一种离子注入机,其具有源,工件支撑和用于将离子从源输送到包含工件支撑件的离子注入室的输送系统。 注入机包括一个或多个可拆卸的插入件,其安装到输送系统或离子注入室的内部,用于收集进入输送系统或离子注入室的材料,这是由于离子和离子注入室内的工件之间的离子在离子 加工工件。 耦合到一个或多个可移除插入件的温度控制器,用于将插入件的温度保持在受控温度,以促进在离子处理期间由于离子和所述工件之间的碰撞而在所述插入件上形成膜。

    PLATEN CLEANING
    25.
    发明申请
    PLATEN CLEANING 审中-公开
    板清洁

    公开(公告)号:US20120017938A1

    公开(公告)日:2012-01-26

    申请号:US13187078

    申请日:2011-07-20

    IPC分类号: B08B1/00

    摘要: To achieve cost efficiency, solar cells must be processed at a high throughput. Breakages, which may leave debris on the clamping surface of the platen, adversely affect this throughput. A plurality of embodiments are disclosed which may be used to remove debris from the clamping surface without breaking the vacuum condition within the processing station. In some embodiments, a brush is used to sweep the debris from the surface of the platen. In other embodiments, an adhesive material is used to collect the debris. In some embodiments, the automation equipment used to handle masks may also be used to handle the platen cleaning mechanisms. In still other embodiments, stream of gas or ion beams are used to clean debris from the clamping surface of the platen.

    摘要翻译: 为了实现成本效益,必须以高产量处理太阳能电池。 碎片可能会使碎片在压板的夹紧表面上产生不利影响。 公开了多个实施例,其可以用于从夹紧表面去除碎屑而不破坏处理站内的真空状况。 在一些实施例中,刷子用于从压板的表面扫掠碎屑。 在其他实施例中,使用粘合剂材料来收集碎屑。 在一些实施例中,用于处理掩模的自动化设备也可用于处理压板清洁机构。 在其它实施例中,气流或离子束用于从压板的夹紧表面清洁碎屑。

    Apparatus for the backside gas cooling of a wafer in a batch ion implantation system
    27.
    发明授权
    Apparatus for the backside gas cooling of a wafer in a batch ion implantation system 失效
    用于在批量离子注入系统中的晶片的背面气体冷却的装置

    公开(公告)号:US06583428B1

    公开(公告)日:2003-06-24

    申请号:US09670241

    申请日:2000-09-26

    IPC分类号: H01J3717

    摘要: The invention provides apparatus by which a cooling gas is supplied from a stationary source to the back side of batch ion implanter workpieces being implanted in a rotating or spinning batch implanter process disk. The cooling gas provides improved heat transfer from the workpieces to the process disk, which may be advantageously combined with circulation of cooling fluid through passages in the process disk to remove heat therefrom. The invention further includes a rotary feedthrough employed to transfer the cooling gas from a stationary housing to a gas chamber in a rotating shaft which spins the batch implanter process disk. In addition, a seal apparatus is provided which seals the cooling gas applied to the back sides of the workpieces from the vacuum in which the front sides of the workpieces are implanted.

    摘要翻译: 本发明提供了一种装置,通过该装置将冷却气体从固定源供给到植入在旋转或旋转批量注入器处理盘中的批量离子注入机工件的背面。 冷却气体提供从工件到处理盘的改进的热传递,其可以有利地与通过处理盘中的通道的冷却流体循环组合以从其中除去热量。 本发明还包括用于将冷却气体从固定壳体转移到旋转轴中的气室的旋转馈通,其旋转批量注入器处理盘。 此外,提供一种密封装置,其从被植入工件的前侧的真空中密封施加到工件的背面的冷却气体。