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23 条记录 (耗时 0.03 秒)

    Triboelectric charge controlled electrostatic clamp
    5.
    发明授权
    Triboelectric charge controlled electrostatic clamp 有权
    摩擦电荷控制静电夹

    公开(公告)号：US09082804B2

    公开(公告)日：2015-07-14

    申请号：US13021838

    申请日：2011-02-07

    申请人： Julian Blake ,  Dale K. Stone ,  Lyudmila Stone ,  David Suuronen ,  Shigeo Oshiro

    发明人： Julian Blake ,  Dale K. Stone ,  Lyudmila Stone ,  David Suuronen ,  Shigeo Oshiro

    IPC分类号： H01L21/683

    CPC分类号： H01L21/6831

    摘要： An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.

    摘要翻译： 公开了一种在去除之前更有效地从衬底去除积聚电荷的静电夹。 目前，升降针和接地引脚是用于在植入后从衬底去除电荷的唯一机制。 本公开描述了一种静电卡盘，其中顶部电介质表面具有嵌入的导电区域，例如密封环中的环形导电区域。 因此，无论衬底在释放过程中的取向如何，衬底的至少一部分将在工件支撑体的电介质层上包含导电区域。 该导电区域可以通过使用电介质层中的导电通孔而连接到地。 在一些实施例中，这些导电通孔是用于向衬底的背侧供应气体的流体导管。

    TRIBOELECTRIC CHARGE CONTROLLED ELECTROSTATIC CLAMP
    6.
    发明申请
    TRIBOELECTRIC CHARGE CONTROLLED ELECTROSTATIC CLAMP 有权
    TRIBOELECTRIC CHARGE控制静电夹

    公开(公告)号：US20120200980A1

    公开(公告)日：2012-08-09

    申请号：US13021838

    申请日：2011-02-07

    申请人： Julian Blake ,  Dale K. Stone ,  Lyudmila Stone ,  David Suuronen ,  Shigeo Oshiro

    发明人： Julian Blake ,  Dale K. Stone ,  Lyudmila Stone ,  David Suuronen ,  Shigeo Oshiro

    IPC分类号： H05F3/02

    CPC分类号： H01L21/6831

    摘要： An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.

    摘要翻译： 公开了一种在去除之前更有效地从衬底去除积聚电荷的静电夹。 目前，升降针和接地引脚是用于在植入后从衬底去除电荷的唯一机制。 本公开描述了一种静电卡盘，其中顶部电介质表面具有嵌入的导电区域，例如密封环中的环形导电区域。 因此，无论衬底在释放过程中的取向如何，衬底的至少一部分将包含工件支撑体的电介质层上的导电区域。 该导电区域可以通过使用电介质层中的导电通孔而连接到地。 在一些实施例中，这些导电通孔是用于向衬底的背侧供应气体的流体导管。

    POWER SAG DETECTION AND CONTROL IN ION IMPLANTING SYSTEM
    7.
    发明申请
    POWER SAG DETECTION AND CONTROL IN ION IMPLANTING SYSTEM 失效
    离子植入系统中的电源检测和控制

    公开(公告)号：US20060108544A1

    公开(公告)日：2006-05-25

    申请号：US10995836

    申请日：2004-11-23

    申请人： Steven Richards ,  Julian Blake ,  Steven Campbell

    发明人： Steven Richards ,  Julian Blake ,  Steven Campbell

    IPC分类号： H01J37/08

    CPC分类号： H01J37/241 ,  H01J37/304 ,  H01J2237/0203

    摘要： In one aspect, the present invention provides a method of managing fluctuations in power supplied to a semiconductor processing apparatus that includes monitoring the power supplied to the apparatus to detect the occurrence of a power fluctuation event during a semiconductor processing session. Upon detection of a power fluctuation event, the semiconductor processing can be interrupted. After the end of the power fluctuation event, at least one operational parameter of the apparatus, e.g., vacuum level in an evacuated processing chamber, can be measured, and the semiconductor processing can be resumed when the measured operational parameter is within an acceptable range. The measured operational parameter can preferably include a parameter that recovers more slowly than others when adversely affected by a power fluctuation event.

    摘要翻译： 一方面，本发明提供了一种管理提供给半导体处理装置的功率波动的方法，该方法包括监视提供给该装置的功率，以检测半导体处理会话期间发生功率波动事件。 在检测到功率波动事件时，可以中断半导体处理。 在功率波动事件结束之后，可以测量设备的至少一个操作参数，例如真空处理室中的真空度，并且当测量的操作参数在可接受的范围内时，可以恢复半导体处理。 测量的操作参数可以优选地包括当受到功率波动事件的不利影响时，比其他参数恢复得更慢的参数。

    Method for junction avoidance on edge of workpieces
    8.
    发明授权
    Method for junction avoidance on edge of workpieces 有权
    工件边缘接合避免的方法

    公开(公告)号：US08598021B2

    公开(公告)日：2013-12-03

    申请号：US13248056

    申请日：2011-09-29

    申请人： Julian Blake ,  Dale Stone

    发明人： Julian Blake ,  Dale Stone

    IPC分类号： H01L21/425

    CPC分类号： H01L21/26513 ,  H01L21/2658 ,  H01L31/068 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of implanting ions into a workpiece without the formation of junctions, which impact the performance of the workpiece, is disclosed. To counteract the effect of dopant being implanted into the edge of the workpiece, components made of material having an opposite conductivity are placed near the workpiece. As ions from the beam strike these components, ions from the material are sputtered. These ions have the opposite conductivity as the implanted ions, and therefore inhibit the formation of junctions.

    摘要翻译： 公开了一种将离子注入工件而不形成影响工件性能的接合点的方法。 为了抵消注入到工件边缘中的掺杂剂的影响，由具有相反电导率的材料制成的部件被放置在工件附近。 当来自光束的离子撞击这些组分时，来自材料的离子被溅射。 这些离子具有与注入离子相反的导电性，因此抑制结的形成。

    SINGLE WAFER IMPLANTER FOR SILICON-ON-INSULATOR WAFER FABRICATION
    9.
    发明申请
    SINGLE WAFER IMPLANTER FOR SILICON-ON-INSULATOR WAFER FABRICATION 审中-公开
    用于绝缘子绝缘子制造的单波长植绒

    公开(公告)号：US20090084988A1

    公开(公告)日：2009-04-02

    申请号：US11862810

    申请日：2007-09-27

    申请人： Julian Blake ,  Yuri Erokhin ,  Jonathan England

    发明人： Julian Blake ,  Yuri Erokhin ,  Jonathan England

    IPC分类号： G21K5/08

    CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/0815 ,  H01J2237/2001 ,  H01J2237/31703 ,  H01L21/67109 ,  H01L21/6831

    摘要： An ion implanter is disclosed. One such ion implanter includes an ion beam source configured to generate oxygen, nitrogen, helium, or hydrogen ions into an ion beam with a specific dose range, and an analyzer magnet configured to remove undesired species from the ion beam. The ion implanter includes an electrostatic chuck having a backside gas thermal coupling that is configured to hold a single workpiece for silicon-on-insulator implantation by the ion beam and is configured to cool the workpiece to a temperature in a range of approximately 300° C. to 600° C.

    摘要翻译： 公开了一种离子注入机。 一个这样的离子注入机包括被配置为将氧，氮，氦或氢离子产生到具有特定剂量范围的离子束中的离子束源，以及被配置为从离子束去除不想要的物质的分析器磁体。 离子注入机包括具有后侧气体热耦合的静电卡盘，其被配置为保持单个工件用于通过离子束进行绝缘体上硅的注入，并且被配置为将工件冷却至约300℃的温度 至600℃