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公开(公告)号：US08767787B1
公开(公告)日：2014-07-01
申请号：US13546943
申请日：2012-07-11
申请人： James W. Raring , Daniel F. Feezell
发明人： James W. Raring , Daniel F. Feezell
IPC分类号： H01S5/00
CPC分类号： H01S5/101 , B82Y20/00 , H01S5/0202 , H01S5/0206 , H01S5/22 , H01S5/3202 , H01S5/34333 , H01S5/4031 , H01S2301/14 , H01S2301/176 , H01S2304/04
摘要： A laser diode device operable at a one or more wavelength ranges. The device has a first waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the first waveguide has a first gain characteristic and a first direction. In a specific embodiment, the first waveguide has a first end and a second end and a first length defined between the first end and the second end. The device has a second waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the second waveguide has a second gain characteristic and a second direction. In a specific embodiment, the second waveguide has a first end, a second end, and a second length defined between the first end and the second end.
摘要翻译： 一种可在一个或多个波长范围下工作的激光二极管装置。 该器件具有设置在含镓材料的非极性或半极性晶面上的第一波导。 在具体实施例中，第一波导具有第一增益特性和第一方向。 在具体实施例中，第一波导具有限定在第一端和第二端之间的第一端和第二端以及第一长度。 该器件具有设置在含镓材料的非极性或半极性晶面上的第二波导。 在具体实施例中，第二波导具有第二增益特性和第二方向。 在具体实施例中，第二波导具有限定在第一端和第二端之间的第一端，第二端和第二长度。
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22.发明授权Self-aligned multi-dielectric-layer lift off process for laser diode stripes 有权用于激光二极管条纹的自对准多介质层剥离工艺公开(公告)号：US08728842B2
公开(公告)日：2014-05-20
申请号：US13425354
申请日：2012-03-20
申请人： James W. Raring , Daniel F. Feezell , Nick Pfister
发明人： James W. Raring , Daniel F. Feezell , Nick Pfister
IPC分类号： H01L33/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2086 , H01S2301/176 , H01S2304/04 , Y10S438/951 , Y10S438/981
摘要： A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.
摘要翻译： 一种形成激光二极管结构的方法。 该方法包括提供具有表面区域的激光二极管材料。 包括交替的第一和第二电介质层的多层电介质掩模结构形成在覆盖表面区域上。 该方法使用多层介电掩模结构作为掩模形成激光二极管结构。 该方法选择性地去除第一电介质层的一部分以在第二电介质层之间形成一个或多个底切区域。 钝化层覆盖多层电介质掩模结构，并且底切区保持完整。 选择性地去除电介质掩模结构，暴露激光二极管结构的顶表面区域。 形成至少覆盖暴露的顶表面区域的接触结构。
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23.发明授权Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors 有权使用非极性或半极性含镓材料和透明荧光体的极化白光装置公开(公告)号：US08299473B1
公开(公告)日：2012-10-30
申请号：US12754886
申请日：2010-04-06
CPC分类号： H01L33/50 , H01L33/16 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/505 , H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.
摘要翻译： 发光器件包括具有覆盖表面区域的表面区域和发光二极管的衬底。 发光二极管制造在含有半极性或非极性GaN的衬底上并且发射第一波长的电磁辐射。 二极管包括以电子波函数和空穴波函数为特征的量子阱区域。 电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。 该器件具有覆盖发光二极管的透明磷光体。 磷光体被基本上极化的发射激发以发射第二波长的电磁辐射。
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24.发明申请Self-Aligned Multi-Dielectric-Layer Lift Off Process for Laser Diode Stripes 有权用于激光二极管条纹的自对准多电介质层剥离工艺公开(公告)号：US20120178198A1
公开(公告)日：2012-07-12
申请号：US13425354
申请日：2012-03-20
申请人： James W. Raring , Daniel F. Feezell , Nick Pfister
发明人： James W. Raring , Daniel F. Feezell , Nick Pfister
IPC分类号： H01L33/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2086 , H01S2301/176 , H01S2304/04 , Y10S438/951 , Y10S438/981
摘要： A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.
摘要翻译： 一种形成激光二极管结构的方法。 该方法包括提供具有表面区域的激光二极管材料。 包括交替的第一和第二电介质层的多层电介质掩模结构形成在覆盖表面区域上。 该方法使用多层介电掩模结构作为掩模形成激光二极管结构。 该方法选择性地去除第一电介质层的一部分以在第二电介质层之间形成一个或多个底切区域。 钝化层覆盖多层电介质掩模结构，并且底切区保持完整。 选择性地去除电介质掩模结构，暴露激光二极管结构的顶表面区域。 形成至少覆盖暴露的顶表面区域的接触结构。
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25.发明授权Self-aligned multi-dielectric-layer lift off process for laser diode stripes 有权用于激光二极管条纹的自对准多介质层剥离工艺公开(公告)号：US08143148B1
公开(公告)日：2012-03-27
申请号：US12502382
申请日：2009-07-14
申请人： James W. Raring , Daniel F. Feezell , Nick Pfister
发明人： James W. Raring , Daniel F. Feezell , Nick Pfister
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2086 , H01S2301/176 , H01S2304/04 , Y10S438/951 , Y10S438/981
摘要： A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.
摘要翻译： 一种形成激光二极管结构的方法。 该方法包括提供具有表面区域的激光二极管材料。 包括交替的第一和第二电介质层的多层电介质掩模结构形成在覆盖表面区域上。 该方法使用多层电介质掩模结构作为掩模形成激光二极管结构。 该方法选择性地去除第一电介质层的一部分以在第二电介质层之间形成一个或多个底切区域。 钝化层覆盖多层电介质掩模结构，并且底切区保持完整。 选择性地去除电介质掩模结构，暴露激光二极管结构的顶表面区域。 形成至少覆盖暴露的顶表面区域的接触结构。
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26.发明授权Optical device structure using miscut GaN substrates for laser applications 有权使用miscut GaN衬底进行激光应用的光学器件结构公开(公告)号：US08422525B1
公开(公告)日：2013-04-16
申请号：US12749466
申请日：2010-03-29
IPC分类号： H01S5/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/2201 , H01S5/34333 , H01S2301/14
摘要： An optical device capable of emitting light having a wavelength ranging from about 490 to about 580 nanometers has a gallium nitride substrate with a semipolar crystalline surface region characterized by an orientation of greater than 3 degrees from (11-22) towards (0001) but less than about 50 degrees. A laser stripe formed on the substrate has a cavity orientation substantially parallel to the m-direction.
摘要翻译： 能够发射波长为约490至约580纳米的光的光学器件具有氮化镓衬底，其具有半极性晶体表面区域，其特征在于从（11-22）朝向（0001）大于3度的取向，但较少 比约50度。 形成在基板上的激光条纹具有基本上平行于m方向的空腔取向。
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27.发明授权Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates 有权用于高增益激光二极管的集成内部反射器，在非极性/半极性GaN衬底上具有高质量的切割面公开(公告)号：US08259769B1
公开(公告)日：2012-09-04
申请号：US12502058
申请日：2009-07-13
申请人： James W. Raring , Daniel F. Feezell
发明人： James W. Raring , Daniel F. Feezell
IPC分类号： H01S5/00
CPC分类号： H01S5/101 , B82Y20/00 , H01S5/0202 , H01S5/0206 , H01S5/22 , H01S5/3202 , H01S5/34333 , H01S5/4031 , H01S2304/04
摘要： A laser diode device operable at a one or more wavelength ranges. The device has a first waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the first waveguide has a first gain characteristic and a first direction. In a specific embodiment, the first waveguide has a first end and a second end and a first length defined between the first end and the second end. The device has a second waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the second waveguide has a second gain characteristic and a second direction. In a specific embodiment, the second waveguide has a first end, a second end, and a second length defined between the first end and the second end. In a specific embodiment, the second waveguide has the first end being coupled to the first end of the first waveguide. The second length is in a different direction from the second length. In a specific embodiment, the device has a cleaved region provided on the second end of the second waveguide, the cleaved region being perpendicular to the second direction of the second waveguide.
摘要翻译： 一种可在一个或多个波长范围下工作的激光二极管装置。 该器件具有设置在含镓材料的非极性或半极性晶面上的第一波导。 在具体实施例中，第一波导具有第一增益特性和第一方向。 在具体实施例中，第一波导具有限定在第一端和第二端之间的第一端和第二端以及第一长度。 该器件具有设置在含镓材料的非极性或半极性晶面上的第二波导。 在具体实施例中，第二波导具有第二增益特性和第二方向。 在具体实施例中，第二波导具有限定在第一端和第二端之间的第一端，第二端和第二长度。 在具体实施例中，第二波导具有第一端耦合到第一波导的第一端。 第二长度与第二长度不同。 在具体实施例中，该器件具有设置在第二波导的第二端上的解理区域，该解理区域垂直于第二波导的第二方向。
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公开(公告)号：US20100316075A1
公开(公告)日：2010-12-16
申请号：US12759273
申请日：2010-04-13
CPC分类号： H01S5/2201 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/32341
摘要： An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.
摘要翻译： 光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约-2度至约2度且朝向（11-20）小于约0.5度。 该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。 在激光条区域的一端设置第一切割的c面刻面，在激光条纹区域的另一端设置第二切割的c面刻面。
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