CTE MATCHED MULTIPLEXOR
    2.
    发明申请
    CTE MATCHED MULTIPLEXOR 审中-公开
    CTE匹配多路复用器

    公开(公告)号:US20080217717A1

    公开(公告)日:2008-09-11

    申请号:US12043765

    申请日:2008-03-06

    IPC分类号: H01L21/50 H01L31/024

    摘要: The invention consists of a wafer-level expansion-matched design which forces a substrate to expand and contract at the same rate as a surface-mounted component, which reduces mechanical stress on the component. An embodiment of an expansion-matched MUX design consists of two pieces of silicon sandwiching a shim, which has a higher CTE than the silicon. By modifying the silicon thickness, shim thickness, and shim material, the CTE of the composite structure may be tailored.The composite structure is produced by a wafer level bonding approach to the balanced stack. Performing the bonding at the wafer level reduces die level touch time and improves planarity. Furthermore, a wafer level solution facilitates fabrication processes at elevated temperatures as the match occurs for both heating and cooling.

    摘要翻译: 本发明包括晶片级膨胀匹配设计,其强制基板以与表面安装部件相同的速率膨胀和收缩,这降低了部件上的机械应力。 扩展匹配MUX设计的一个实施例由夹持垫片的两片硅片组成,其具有比硅更高的CTE。 通过改变硅厚度,垫片厚度和垫片材料,可以调整复合结构的C​​TE。 复合结构通过与平衡叠层的晶片级接合方法产生。 在晶片级进行接合可以降低晶片级接触时间并提高平面度。 此外,晶片级解决方案有助于在升高的温度下进行制造工艺,因为加热和冷却均发生匹配。