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公开(公告)号：US06648733B2
公开(公告)日：2003-11-18
申请号：US09848894
申请日：2001-05-04
IPC分类号： B24B100
CPC分类号： B24D3/28 , B24B37/26 , B24B41/047 , B24D3/26
摘要： A polishing pad with a polishing layer having a macro-texture and a micro-texture wherein the polishing layer is formed by solidifying a flowable material, the polishing layer further comprising hard domains and soft domains, each domain having an average size less than 100 microns.
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22.发明授权Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like 有权用于制造半导体器件，存储盘等的固定磨料抛光系统公开(公告)号：US06337281B1
公开(公告)日：2002-01-08
申请号：US09521042
申请日：2000-03-08
申请人： David B. James , William D. Budinger , John V. H. Roberts , Michael R. Oliver , Nina G. Chechik , Richard M. Levering, Jr. , Heinz F. Reinhardt
发明人： David B. James , William D. Budinger , John V. H. Roberts , Michael R. Oliver , Nina G. Chechik , Richard M. Levering, Jr. , Heinz F. Reinhardt
IPC分类号： H01L21461
CPC分类号： H01L21/02024 , B24B37/26 , B24B41/047 , B24B53/00 , B24B53/017 , B24D3/28 , B24D3/32 , B24D3/34 , B24D13/10 , B29C70/58 , B29C70/66 , B29L2031/736 , G11B23/0021 , H01L21/30604 , H01L21/30625 , H01L21/31053
摘要： A fixed abrasive, chemical-mechanical polishing system which is particularly well suited for use in the manufacture of semiconductor devices, memory disks or the like.
摘要翻译： 一种特别适用于制造半导体器件，存储器盘等的固定的磨料化学机械抛光系统。
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公开(公告)号：US06245679B1
公开(公告)日：2001-06-12
申请号：US09498267
申请日：2000-02-03
申请人： Lee Melbourne Cook , David B. James , William D. Budinger , John V. H. Roberts , Michael R. Oliver , Nina G. Chechik , Richard M. Levering, Jr.
发明人： Lee Melbourne Cook , David B. James , William D. Budinger , John V. H. Roberts , Michael R. Oliver , Nina G. Chechik , Richard M. Levering, Jr.
IPC分类号： H01L2100
CPC分类号： B24B37/26 , B24B37/04 , B24B41/047 , B24B57/02 , B24D3/28 , B24D3/34 , G11B23/0021
摘要： An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10% which contact the wafer surface in combination with a reactive liquid solution.
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公开(公告)号：US6019666A
公开(公告)日：2000-02-01
申请号：US74667
申请日：1998-05-08
CPC分类号： B24B37/26 , B24B41/047 , B24D7/066
摘要： This invention provides polishing pad tiles which, by virtue of their geometry and surface features, can be arranged to form mosaic pads having channels at the seams which facilitate the flow of polishing fluid during polishing of a workpiece.
摘要翻译： 本发明提供抛光垫瓦片，其抛光垫片的几何形状和表面特征可以布置成形成在接缝处具有通道的马赛克垫片，这有利于在抛光工件期间抛光流体的流动。
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公开(公告)号：US6017265A
公开(公告)日：2000-01-25
申请号：US782717
申请日：1997-01-13
申请人： Lee Melbourne Cook , David B. James , Charles William Jenkins , Heinz F. Reinhardt , John V. H. Roberts , Raj Raghav Pillai
发明人： Lee Melbourne Cook , David B. James , Charles William Jenkins , Heinz F. Reinhardt , John V. H. Roberts , Raj Raghav Pillai
CPC分类号： B29C43/006 , B24B37/042 , B24B37/24 , B24D18/0009 , B24D3/26 , B24D3/28
摘要： Polymer-based pads useful for polishing objects, particularly integrated circuits, having interconnected porosity which is uniform in all directions, and where the solid portion of said pad consists of a uniform continuously interconnected polymer material of greater than 50% of the gross volume of the article, are produced directly to final shape and dimension by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer and at a pressure in excess of 100 psi in a mold having the desired final pad dimensions. In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other. When pressure sintered at a temperature not to exceed the melting point of the lower melting powder, the increased stiffness afforded by incorporation of the higher melting polymer component gives improved mechanical strength to the sintered product. Conditions for producing the pads of this invention are such that the polymer powder particles from which the pads are produced essentially retain their original shape and are point bonded to form the pad.
摘要翻译： 用于抛光物体，特别是集成电路的聚合物基垫，具有在所有方向上均匀的相互连接的孔隙度，并且其中所述垫的固体部分由大于总体积的50％的均匀的连续相互连接的聚合物材料组成 制品通过在高于玻璃化转变温度但不超过聚合物的熔点并且在具有所需的模具的模具中的压力超过100psi的压力下加压烧结热塑性聚合物的粉末压块直接制成最终形状和尺寸 最终垫尺寸。 在优选的方案中，使用两种聚合物粉末的混合物，其中一种聚合物的熔点比另一种低。 当在不超过下熔融粉末的熔点的温度下进行压力烧结时，通过引入较高熔点的聚合物组分提供的增加的刚性使烧结产品具有改善的机械强度。 制造本发明的焊盘的条件使得制造焊盘的聚合物粉末颗粒基本上保持其原始形状并且被点焊以形成焊盘。
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公开(公告)号：US08888877B2
公开(公告)日：2014-11-18
申请号：US13469465
申请日：2012-05-11
申请人： Donna M. Alden , David B. James , Andrew R. Wank , James Murnane
发明人： Donna M. Alden , David B. James , Andrew R. Wank , James Murnane
CPC分类号： B24B37/24 , B24D18/0009 , C09G1/02
摘要： The invention involves a method of preparing an alkaline-earth metal oxide-containing polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The method includes introducing a feed stream of gas-filled polymeric microelements into a gas jet, the polymeric microelements having varied density, varied wall thickness and varied particle size. The method passes the polymeric microelements in the gas jet adjacent a Coanda block, the Coanda block having a curved wall for separating the polymeric microelements with Coanda effect, inertia and gas flow resistance. Then it separates various alkaline earth metal oxide constituents from the curved wall of the Coanda block to clean the polymeric microelements.
摘要翻译： 本发明涉及一种制备用于抛光半导体，磁性和光学基底中的至少一种的含碱土金属氧化物的抛光垫的方法。 该方法包括将气体填充的聚合物微量元素的进料流引入到气体射流中，所述聚合物微量元素具有变化的密度，变化的壁厚度和不同的粒度。 该方法通过邻近柯恩达块的气体射流中的聚合微量元素，柯恩达块具有用于用柯恩达效应，惯性和气体流动阻力分离聚合物微量元素的弯曲壁。 然后将各种碱土金属氧化物成分与柯安达块的弯曲壁分离，以清洁聚合物微量元素。
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公开(公告)号：US20120171940A1
公开(公告)日：2012-07-05
申请号：US13422180
申请日：2012-03-16
IPC分类号： B24D11/00
CPC分类号： B24B37/24 , C08G18/4252 , C08G18/664 , Y10T428/249953 , Y10T428/249979
摘要： The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 μm and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 μm. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad.
摘要翻译： 抛光垫可用于抛光磁性，光学和半导体衬底中的至少一种。 多孔抛光层包括聚氨酯基质内的双孔隙结构。 双孔隙结构具有初级孔隙，其具有厚度为15至55μm的孔壁和在25℃下测量的10至60MPa的储能模量。此外，孔壁包含具有平均值的第二组孔 孔径为5〜30μm。 将多孔抛光层固定到聚合物膜或片状基底上，或者形成织造或非织造结构以形成抛光垫。
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公开(公告)号：US08162728B2
公开(公告)日：2012-04-24
申请号：US12586859
申请日：2009-09-28
IPC分类号： B24D11/00
CPC分类号： B24B37/24 , C08G18/4252 , C08G18/664 , Y10T428/249953 , Y10T428/249979
摘要： The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 μm and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 μm. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad.
摘要翻译： 抛光垫可用于抛光磁性，光学和半导体衬底中的至少一种。 多孔抛光层包括聚氨酯基质内的双孔隙结构。 双孔隙结构具有初级孔隙，其具有厚度为15至55μm的孔壁和在25℃下测量的10至60MPa的储能模量。此外，孔壁包含具有平均值的第二组孔 孔径为5〜30μm。 将多孔抛光层固定到聚合物膜或片状基底上，或者形成织造或非织造结构以形成抛光垫。
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公开(公告)号：US07371160B1
公开(公告)日：2008-05-13
申请号：US11644478
申请日：2006-12-21
申请人： Carlos A. Cruz , David B. James , Mary Jo Kulp
发明人： Carlos A. Cruz , David B. James , Mary Jo Kulp
IPC分类号： B24B11/00
CPC分类号： B24B37/24
摘要： The chemical mechanical polishing pad is suitable for polishing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polymeric matrix with an elastomeric polymer distributed within the polymeric matrix. The polymeric matrix has a glass transition above room temperature; and the elastomeric polymer has an average length of at least 0.1 μm in at least one direction, represents 1 to 45 volume percent of polishing pad and has a glass transition temperature below room temperature. The polishing pad has an increased diamond conditioner cut rate in comparison to a polishing pad formed from the polymeric matrix without the elastomeric polymer.
摘要翻译： 化学机械抛光垫适用于抛光半导体，光学和磁性基板中的至少一种。 抛光垫包括聚合物基体，其中弹性体聚合物分布在聚合物基质内。 聚合物基体具有高于室温的玻璃化转变; 并且弹性体聚合物在至少一个方向上具有至少0.1μm的平均长度，表示抛光垫的1至45体积％，并且玻璃化转变温度低于室温。 与没有弹性体聚合物的聚合物基质形成的抛光垫相比，抛光垫具有增加的金刚石调节剂切割速率。
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公开(公告)号：US06500053B2
公开(公告)日：2002-12-31
申请号：US10071668
申请日：2002-02-08
IPC分类号： B24B100
CPC分类号： B24B37/24 , B24B37/04 , B24D3/34 , B24D13/12 , B24D13/147
摘要： This invention describes improved polishing pads useful in the manufacture ofsemiconductor devices or the like. The pads of the present invention may have an advantageous hydrophilic polishing material and are sufficiently thin to generally improve predictability and polishing performance.
摘要翻译： 本发明描述了可用于制造半导体器件等的改进的抛光垫。 本发明的垫可以具有有利的亲水性抛光材料，并且足够薄以通常改善可预测性和抛光性能。
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