Hydrolytically stable grooved polishing pads for chemical mechanical planarization
    10.
    发明授权
    Hydrolytically stable grooved polishing pads for chemical mechanical planarization 有权
    水解稳定的槽式抛光垫用于化学机械平面化

    公开(公告)号:US06749485B1

    公开(公告)日:2004-06-15

    申请号:US09665841

    申请日:2000-09-20

    IPC分类号: B24B100

    摘要: An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness and hydrolytic stability.

    摘要翻译: 用于在半导体晶片上抛光金属镶嵌结构的改进的焊盘和工艺。 该方法包括以下步骤:将聚合物片材的表面压在聚合物片材的表面上,并与含有亚微米级颗粒的含水基液体组合,并提供在压力下使晶片和抛光垫片相对运动的装置, 接触导致平面去除所述晶片的表面,其中抛光垫在去除所述负载时具有低弹性恢复,使得片材的机械响应大大无弹性。 改进的垫的特征在于具有高的能量耗散以及高的垫刚度和水解稳定性。