利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

82 条记录 (耗时 0.029 秒)

    Dishing and defect control of chemical mechanical polishing using real-time adjustable additive delivery
    21.
    发明授权
    Dishing and defect control of chemical mechanical polishing using real-time adjustable additive delivery 有权
    化学机械抛光的抛光和缺陷控制使用实时可调添加剂递送

    公开(公告)号：US08210900B2

    公开(公告)日：2012-07-03

    申请号：US12263237

    申请日：2008-10-31

    申请人： Wen-Chiang Tu ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

    发明人： Wen-Chiang Tu ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

    IPC分类号： B24B49/00

    CPC分类号： B24B37/04 ,  B24B57/02

    摘要： A method and apparatus for polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.

    摘要翻译： 一种用于通过化学机械抛光工艺抛光或平面化基板的方法和装置。 在一个实施例中，提供了一种处理半导体衬底的方法。 该方法包括将衬底定位在包括抛光垫组件的抛光设备上，将抛光浆料输送到抛光垫组件的表面，用抛光垫组件的表面抛光衬底，监测来自多个部件的材料的去除速率 在基板表面上确定基板表面上的多个区域是否均匀抛光，并且将抛光浆料添加剂选择性地输送到多个区域中的至少一个区域以获得均匀的材料去除速率 从所述衬底表面上的多个区域中去除所述至少一个区域的材料的去除速率不同于所述多个区域中的至少一个其它区域。

    Chemical planarization of copper wafer polishing
    22.
    发明授权
    Chemical planarization of copper wafer polishing 有权
    铜晶片抛光的化学平面化

    公开(公告)号：US08586481B2

    公开(公告)日：2013-11-19

    申请号：US13105658

    申请日：2011-05-11

    申请人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

    发明人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/04 ,  H01L21/7684

    摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

    摘要翻译： 本文所述的实施例涉及从衬底去除材料。 更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化基板。 在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。 该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供 衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

    CHEMICAL PLANARIZATION OF COPPER WAFER POLISHING
    24.
    发明申请
    CHEMICAL PLANARIZATION OF COPPER WAFER POLISHING 有权
    铜波抛光的化学平面化

    公开(公告)号：US20110294293A1

    公开(公告)日：2011-12-01

    申请号：US13105658

    申请日：2011-05-11

    申请人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. Mc Clintock ,  Barry L. Chin

    发明人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. Mc Clintock ,  Barry L. Chin

    IPC分类号： H01L21/306

    CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/04 ,  H01L21/7684

    摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

    摘要翻译： 本文所述的实施例涉及从衬底去除材料。 更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化衬底。 在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。 该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供 衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

    DISHING AND DEFECT CONTROL OF CHEMICAL MECHANICAL POLISHING USING REAL-TIME ADJUSTABLE ADDITIVE DELIVERY
    28.
    发明申请
    DISHING AND DEFECT CONTROL OF CHEMICAL MECHANICAL POLISHING USING REAL-TIME ADJUSTABLE ADDITIVE DELIVERY 有权
    使用实时可调式添加剂进行化学机械抛光的抛光和缺陷控制

    公开(公告)号：US20100112903A1

    公开(公告)日：2010-05-06

    申请号：US12263237

    申请日：2008-10-31

    申请人： WEN-CHIANG TU ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

    发明人： WEN-CHIANG TU ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

    IPC分类号： B24B49/04 ,  B24B7/22 ,  B24B57/02

    CPC分类号： B24B37/04 ,  B24B57/02

    摘要： A method and apparatus for polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.

    摘要翻译： 一种用于通过化学机械抛光工艺抛光或平面化基板的方法和装置。 在一个实施例中，提供了一种处理半导体衬底的方法。 该方法包括将衬底定位在包括抛光垫组件的抛光设备上，将抛光浆料输送到抛光垫组件的表面，用抛光垫组件的表面抛光衬底，监测来自多个部件的材料的去除速率 在基板表面上确定基板表面上的多个区域是否均匀抛光，并且将抛光浆料添加剂选择性地输送到多个区域中的至少一个区域以获得均匀的材料去除速率 从所述衬底表面上的多个区域中去除所述至少一个区域的材料的去除速率不同于所述多个区域中的至少一个其它区域。

    Feedback Control Using Detection Of Clearance And Adjustment For Uniform Topography
    30.
    发明申请
    Feedback Control Using Detection Of Clearance And Adjustment For Uniform Topography 有权
    反馈控制使用检测的均匀地形的清除和调整

    公开(公告)号：US20130224890A1

    公开(公告)日：2013-08-29

    申请号：US13774843

    申请日：2013-02-22

    申请人： Kun Xu ,  Ingemar Carlsson ,  Tzu-Yu Liu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

    发明人： Kun Xu ,  Ingemar Carlsson ,  Tzu-Yu Liu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

    IPC分类号： H01L21/66

    CPC分类号： H01L22/26 ,  B24B37/005 ,  B24B37/04 ,  B24B49/12 ,  H01L22/12

    摘要： A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio.

    摘要翻译： 控制抛光的方法包括将表示基材的第一区域的间隙时间的比率与基材的第二区域的间隙时间的所需比率进行存储。 在第一衬底的抛光期间，监测上覆层，产生一系列测量，并且对与衬底的第一区域相关联的第一组和与衬底上的第二区域相关联的第二组对第一组进行测量。 基于来自第一组和第二组的测量，分别确定覆盖层被清除的第一次和第二次。 基于在抛光第一基板期间第一区域中施加的第一压力，第一时间，第二时间和期望比率，针对第一区域计算至少一个调整的抛光压力。