公开(公告)号：US08351692B2

公开(公告)日：2013-01-08

申请号：US12007366

申请日：2008-01-09

申请人： Sang-jo Lee ,  Si-hwa Lee ,  Do-hyung Kim

发明人： Sang-jo Lee ,  Si-hwa Lee ,  Do-hyung Kim

IPC分类号： G06T9/00

CPC分类号： H04N19/90 ,  G09G2340/02 ,  H04N19/12 ,  H04N19/176 ,  H04N19/184 ,  H04N19/186 ,  H04N19/60

摘要： A method, medium, and system effectively compressing and/or restoring binary images. By compressing pixel values making up a 2×2 block in an input image, using representative values representing the pixel values and a pattern of the pixel values represented by the representative values, it is possible to effectively compress and/or restore binary images having little similarities between pixel values. In addition, by extracting compressed values and a pattern of pixel values making up a 2×2 block in an image, from compressed data of the 2×2 block, and restoring pixel values using the compressed values and the pattern, it is possible to effectively restore binary images.

摘要翻译： 一种方法，媒体和系统有效地压缩和/或恢复二进制图像。 通过在输入图像中压缩构成2×2块的像素值，使用表示像素值的代表值和由代表值表示的像素值的图案，可以有效地压缩和/或恢复具有很小的二进制图像 像素值之间的相似性。 此外，通过从2×2块的压缩数据中提取压缩值和构成图像中的2×2块的像素值的图案，并且使用压缩值和图案恢复像素值， 有效地恢复二进制图像。

公开(公告)号：US07974848B2

公开(公告)日：2011-07-05

申请号：US11766499

申请日：2007-06-21

申请人： Mi-young Kim ,  Si-hwa Lee ,  Do-hyung Kim

发明人： Mi-young Kim ,  Si-hwa Lee ,  Do-hyung Kim

IPC分类号： G10L19/00

CPC分类号： G10L19/035

摘要： Provided are an audio data encoding method and apparatus including determining an initial scale factor value for each frequency band of the audio data according to a quantization error and a maximum permissible distortion level for each frequency band; comparing the initial scale factor value for each frequency band and a predetermined common scale factor value and determining a final scale factor value for each frequency band based on a comparison result; quantizing the audio data using the final scale factor value for each frequency band; and encoding the quantized audio data.

摘要翻译： 提供一种音频数据编码方法和装置，包括根据每个频带的量化误差和最大允许失真电平来确定音频数据的每个频带的初始比例因子值; 比较每个频带的初始比例因子值和预定的公共比例因子值，并且基于比较结果确定每个频带的最终比例因子值; 使用每个频带的最终比例因子值量化音频数据; 并对量化的音频数据进行编码。

公开(公告)号：US20090285986A1

公开(公告)日：2009-11-19

申请号：US12465975

申请日：2009-05-14

申请人： Hye-young Park ,  Sung-Iae Cho ,  Jin-il Lee ,  Do-hyung Kim ,  Dong-hyun Im

发明人： Hye-young Park ,  Sung-Iae Cho ,  Jin-il Lee ,  Do-hyung Kim ,  Dong-hyun Im

IPC分类号： C23C16/22

CPC分类号： C23C16/305 ,  C23C16/16 ,  C23C16/18 ,  C23C16/45531

摘要： Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.

摘要翻译： 提供了通过化学吸附金属原子到其表面上形成有阴离子的基板来形成材料层的方法，以及通过使用材料层形成方法制造存储器件的方法。 因此，具有小直径的通孔可以填充材料层而不形成空隙或接缝。 因此，可以获得可靠的存储器件。

公开(公告)号：US20090097305A1

公开(公告)日：2009-04-16

申请号：US12248964

申请日：2008-10-10

申请人： Byoung-jae Bae ,  Sung-lae Cho ,  Jin-il Lee ,  Hye-young Park ,  Do-hyung Kim

发明人： Byoung-jae Bae ,  Sung-lae Cho ,  Jin-il Lee ,  Hye-young Park ,  Do-hyung Kim

IPC分类号： G11C11/00 ,  H01L51/40

CPC分类号： H01L45/06 ,  C23C16/305 ,  C23C16/45534 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  H01L45/1691

摘要： In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.

摘要翻译： 一方面，提供了形成相变材料层的方法。 该方法包括将包含式1的组合物的反应气体供应到反应室中，将包含Ge（II）的第一源供应到反应室中，并将第二源供应到反应室中。 式1是NR1R2R3，其中R1，R2和R3各自独立地选自H，CH3，C2H5，C3H7，C4H9，Si（CH3）3，NH2，NH（CH3），N（CH3） 2，NH（C 2 H 5）和N（C 2 H 5）2。

公开(公告)号：US20070074522A1

公开(公告)日：2007-04-05

申请号：US11512345

申请日：2006-08-30

申请人： Choon-dong Kim ,  Hyun-man Jang ,  In-sun Park ,  Ig-saeng Kim ,  Do-hyung Kim

发明人： Choon-dong Kim ,  Hyun-man Jang ,  In-sun Park ,  Ig-saeng Kim ,  Do-hyung Kim

IPC分类号： F25B9/00

CPC分类号： F25B9/14 ,  F25B2309/001

摘要： A cryogenic refrigerator has a separating device provided between a lower temperature portion and a heat exchanger to selectively separate the lower temperature portion and the heat exchanger, and thus to selectively block heat transfer between the lower temperature portion and the heat exchanger. According to the cryogenic refrigerator, it can have an ability to perform a maintenance operation of the cryogenic refrigerator at normal temperature by blocking heat transfer from the lower temperature portion to the heat exchanger during maintenance after disassembly.

摘要翻译： 低温冷冻机具有设置在下部温度部和热交换器之间的分离装置，以选择性地分离下部温度部和热交换器，从而选择性地阻止下部温度部和热交换器之间的热传递。 根据低温冰箱，能够通过在拆卸后的维护期间阻止从低温部向热交换器的热传递而在常温下进行低温冷冻机的维护操作。

公开(公告)号：US20060146355A1

公开(公告)日：2006-07-06

申请号：US11312931

申请日：2005-12-21

申请人： Do-hyung Kim

发明人： Do-hyung Kim

IPC分类号： G06F3/12

CPC分类号： G06K15/1805 ,  G06F3/1204 ,  G06F3/1211 ,  G06F3/1241 ,  G06F3/126 ,  G06F3/1286

摘要： Provided is printer operation control system and method for a printer having diverse print functions by using an external memory. The external memory is used to store information on the availability of each print function. A reader is provided for reading the information on the availability of each print function stored in the external memory. Further, a function setting unit is provided for setting up the operability of software for each print function based on the information read in the reader. Even further, a controller is provided for controlling the operation of the printer based on the operability of each software set up in the function setting unit.

公开(公告)号：US06383949B1

公开(公告)日：2002-05-07

申请号：US09598254

申请日：2000-06-21

申请人： Do-hyung Kim ,  Dong-geun Na

发明人： Do-hyung Kim ,  Dong-geun Na

IPC分类号： H01L2131

CPC分类号： H01L21/31051 ,  C23C16/401 ,  C23C16/46 ,  H01L21/76801

摘要： The present invention resides in a method of and apparatus suitable for forming an O3-TEOS oxide film on a substrate. First, the O3-TEOS oxide is deposited on an underlying film at such a high temperature that the morphology of the first O3-TEOS oxide film is not dependent on the material of the underlying film. Then, the O3-TEOS oxide is deposited at a substantially lower temperature so that the deposition can occur at a high rate. The apparatus includes at least two susceptors or heaters, which are configured or can be controlled to produce the different temperatures under which the depoition occurs. Because the O3-TEOS film is formed at least two different temperatures, i.e., a high temperature and a low temperature, the base material dependence of the O3-TEOS film is eliminated and yet a high level of productivity can be sustained.

摘要翻译： 本发明在于适用于在衬底上形成O3-TEOS氧化物膜的方法和装置。 首先，在如此高的温度下将O3-TEOS氧化物沉积在下面的膜上，使得第一O3-TEOS氧化物膜的形态不依赖于下面的膜的材料。 然后，以基本上较低的温度沉积O 3 -TEOS氧化物，使得沉积可以以高速率发生。 该装置包括至少两个基座或加热器，其被配置或可以被控制以产生在其下发生的不同温度。 由于O 3 -TEOS膜形成至少两个不同的温度，即高温和低温，因此消除了O3-TEOS膜的基础材料依赖性，并且可以维持高水平的生产率。

公开(公告)号：US5763323A

公开(公告)日：1998-06-09

申请号：US687055

申请日：1996-08-07

申请人： Do-hyung Kim ,  Joo-young Lee ,  Young-so Park

发明人： Do-hyung Kim ,  Joo-young Lee ,  Young-so Park

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/11519 ,  H01L27/10808 ,  H01L27/10844 ,  Y10S257/905 ,  Y10S438/97

摘要： A method for fabricating an integrated circuit device includes the steps of forming an insulating layer on a substrate and forming a plurality of parallel conductive lines on the insulating layer. An etch barrier is formed on each of the parallel conductive lines, and contact holes are formed between the etch barriers. The contact holes expose portions of the substrate without exposing the plurality of parallel conductive lines. In particular, the contact holes can be formed by forming a patterned mask layer on the insulating layer and etch barriers, and etching exposed portions of the insulating layer. The patterned mask layer selectively exposes a plurality of parallel strips orthogonal to the plurality of parallel conductive lines. Related structures are also discussed.

摘要翻译： 一种用于制造集成电路器件的方法包括以下步骤：在衬底上形成绝缘层，并在绝缘层上形成多条平行的导线。 在每个平行的导线上形成蚀刻阻挡层，并且在蚀刻阻挡层之间形成接触孔。 接触孔露出基板的部分，而不暴露多条平行导线。 特别地，可以通过在绝缘层上形成图案化掩模层并蚀刻阻挡层并蚀刻绝缘层的暴露部分来形成接触孔。 图案化掩模层选择性地暴露与多个平行导线垂直的多个平行条带。 还讨论了相关结构。

公开(公告)号：US08244049B2

公开(公告)日：2012-08-14

申请号：US12007266

申请日：2008-01-08

申请人： Sang-jo Lee ,  Si-hwa Lee ,  Do-hyung Kim

发明人： Sang-jo Lee ,  Si-hwa Lee ,  Do-hyung Kim

IPC分类号： G06K9/36 ,  H04N7/32

CPC分类号： H04N19/90 ,  H04N19/105 ,  H04N19/11 ,  H04N19/12 ,  H04N19/14 ,  H04N19/176 ,  H04N19/182 ,  H04N19/186 ,  H04N19/46 ,  H04N19/60

摘要： Provided are an apparatus and method for effectively compressing and restoring edge areas in an image. Therefore, by predicting values of pixels positioned at each directional edge, among pixels constructing a 2×2 block in a current image, using values of neighbor pixels of the pixels positioned at each directional edge, selecting an edge mode corresponding to a directional edge in which the difference between the predicted values and actual values of the pixels is a minimum, and outputting edge mode data indicating the edge mode instead of the predicted values corresponding to the edge mode, it is possible to effectively compress edge areas in which little similarity exists between pixel values, and accordingly improve a compression rate of edge areas.

摘要翻译： 提供了一种用于有效地压缩和恢复图像中的边缘区域的装置和方法。 因此，通过使用位于每个方向边缘的像素的相邻像素的值，在构成当前图像中的2×2块的像素中预测位于每个方向边缘的像素的值，选择与位于每个方向边缘处的方向边缘相对应的边缘模式 其中像素的预测值和实际值之间的差异是最小的，并且输出指示边缘模式的边缘模式数据而不是与边缘模式相对应的预测值，可以有效地压缩其中几乎没有相似性的边缘区域 在像素值之间，并因此提高边缘区域的压缩率。

公开(公告)号：US08142846B2

公开(公告)日：2012-03-27

申请号：US12248964

申请日：2008-10-10

申请人： Byoung-jae Bae ,  Sung-lae Cho ,  Jin-il Lee ,  Hye-young Park ,  Do-hyung Kim

发明人： Byoung-jae Bae ,  Sung-lae Cho ,  Jin-il Lee ,  Hye-young Park ,  Do-hyung Kim

IPC分类号： C23C16/30 ,  H01L21/71

CPC分类号： H01L45/06 ,  C23C16/305 ,  C23C16/45534 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  H01L45/1691

摘要： In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.

摘要翻译： 一方面，提供了形成相变材料层的方法。 该方法包括将包含式1的组合物的反应气体供应到反应室中，将包含Ge（II）的第一源供应到反应室中，并将第二源供应到反应室中。 式1是NR1R2R3，其中R1，R2和R3各自独立地选自H，CH3，C2H5，C3H7，C4H9，Si（CH3）3，NH2，NH（CH3），N（CH3） 2，NH（C 2 H 5）和N（C 2 H 5）2。