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公开(公告)号：US09634120B2
公开(公告)日：2017-04-25
申请号：US14610410
申请日：2015-01-30
Inventor： Kyoung Ik Cho , Jae Bon Koo , Chan Woo Park , Bock Soon Na , Sang Seok Lee , Sang Chul Lim , Soon-Won Jung , Hye Yong Chu
IPC: H01L29/10 , H01L29/66 , H01L29/786 , H01L27/12 , H01L21/3105
CPC classification number: H01L29/78603 , H01L21/3105 , H01L21/31058 , H01L21/31144 , H01L27/1218 , H01L27/1266 , H01L29/66742
Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.
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公开(公告)号：US09535283B2
公开(公告)日：2017-01-03
申请号：US14286190
申请日：2014-05-23
Inventor： Yong Hae Kim , Gi Heon Kim , Hojun Ryu , Chi-Sun Hwang , Jong-Heon Yang , Sang Chul Lim , Jae Bon Koo , Jonghee Lee , Jeong Ik Lee
IPC: G02F1/1335
CPC classification number: G02F1/133553 , G02F1/133555 , G02F2001/133541 , G02F2201/44
Abstract: Provided is a display device and a method of manufacturing the same. The display device includes a reflective display part including a first cathode electrode and a first anode electrode and a liquid crystal layer, a light emitting display part including a second cathode electrode and a second anode electrode and a light emission film, and a thin film transistor part being electrically connected to the first and second anode electrodes. The light emitting display part further includes a bank disposed on one side of the second anode electrode between the second anode electrode and the light emission film.
Abstract translation: 提供一种显示装置及其制造方法。 显示装置包括：反射显示部，包括第一阴极电极和第一阳极电极和液晶层;发光显示部分，包括第二阴极电极和第二阳极电极;以及发光膜;以及薄膜晶体管 部分电连接到第一和第二阳极电极。 发光显示部还包括设置在第二阳极电极与发光膜之间的一侧的堤。
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Patent Agency Ranking
公开(公告)号：US09379350B2
公开(公告)日：2016-06-28
申请号：US13830002
申请日：2013-03-14
Inventor： Jae Bon Koo , Hojun Ryu , Chi-Sun Hwang , Jeong Ik Lee , Hye Yong Chu
CPC classification number: H01L51/5203 , G02F1/13718 , G02F1/167 , G02F2201/44 , G02F2203/02 , H01L27/3232 , H01L33/08
Abstract: A dual mode display apparatus according to the inventive concept includes a lower substrate, a first lower electrode on the lower substrate, a light switching layer on the first lower electrode, a first upper electrode on the light switching layer, a passivation layer on the first upper electrode, a contact plug connected to the first upper electrode and penetrating the passivation layer, a second lower electrode on the contact plug and the passivation layer, an organic light-emitting layer on the second lower electrode, a second upper electrode on the organic light-emitting layer, and an upper substrate on the second upper electrode.
Abstract translation: 根据本发明的双模显示装置包括下基板，下基板上的第一下电极，第一下电极上的光切换层，光开关层上的第一上电极，第一下电极上的钝化层 上电极，连接到第一上电极并穿透钝化层的接触插塞，接触插塞和钝化层上的第二下电极，第二下电极上的有机发光层，有机发光层上的第二上电极 发光层和第二上电极上的上基板。
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公开(公告)号：US09236577B2
公开(公告)日：2016-01-12
申请号：US13829882
申请日：2013-03-14
Inventor： Jae Bon Koo , Jeong Ik Lee , Chi-Sun Hwang , Hojun Ryu , Hye Yong Chu
CPC classification number: H01L51/50 , G02F1/167 , G02F2201/44 , H01L27/3232 , H01L51/56
Abstract: Provided are a dual-mode display device and a method of manufacturing the same. The device includes a lower substrate, an upper substrate facing the lower substrate, a thin-film transistor portion between the upper substrate and the lower substrate, a first anode on one side of the thin-film transistor portion, a first cathode between the first anode and the upper substrate, an organic light-emitting layer between the first cathode and the first anode, a second anode on the other side of the thin-film transistor portion, a second cathode between the second anode and the upper substrate, or the second anode and the lower substrate, and a optical switching layer between the second cathode and the second anode.
Abstract translation: 提供一种双模式显示装置及其制造方法。 该器件包括下基板，面向下基板的上基板，上基板和下基板之间的薄膜晶体管部分，薄膜晶体管部分一侧的第一阳极，第一阴极在第一 阳极和上基板，在第一阴极和第一阳极之间的有机发光层，薄膜晶体管部分的另一侧的第二阳极，第二阳极和上基板之间的第二阴极， 第二阳极和下基板，以及在第二阴极和第二阳极之间的光学开关层。
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公开(公告)号：US09184063B2
公开(公告)日：2015-11-10
申请号：US13939801
申请日：2013-07-11
Inventor： Yong Suk Yang , In-Kyu You , Jae Bon Koo , Yong-Young Noh
CPC classification number: H01L21/4814 , H01L21/4867 , H01L23/49822 , H01L2924/0002 , H05K1/0277 , H05K1/0298 , H05K1/0306 , H05K1/0313 , H05K1/09 , H05K3/105 , H05K3/125 , H05K3/4069 , H05K2203/1105 , H05K2203/125 , Y10T29/49117 , Y10T29/49126 , Y10T29/4913 , Y10T29/49144 , Y10T29/49155 , Y10T29/49165 , H01L2924/00
Abstract: Provided are a multi-layer interconnection structure and a manufacturing method thereof. The multi-layer interconnection structure includes a substrate; a first wiring on the substrate; an interlayer insulation layer on the first wiring; a second wiring on the interlayer insulation layer; and a via contact including at least one conductive filament penetrating through the interlayer insulation layer between the second wiring and the first wiring to be electrically connected to the first wiring and the second wiring.
Abstract translation: 提供一种多层互连结构及其制造方法。 多层互连结构包括基板; 在基板上的第一布线; 第一布线上的层间绝缘层; 层间绝缘层上的第二布线; 以及通孔接触，其包括穿过所述第二布线和所述第一布线之间的所述层间绝缘层的至少一个导电丝，以电连接到所述第一布线和所述第二布线。
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公开(公告)号：US08912094B2
公开(公告)日：2014-12-16
申请号：US13846437
申请日：2013-03-18
Inventor： Jae Bon Koo , Chan Woo Park , Soon-Won Jung , Sang Chul Lim , Ji-Young Oh , Bock Soon Na , Hye Yong Chu
IPC: H01L21/44 , H01L21/768
CPC classification number: H01L29/78603 , H01L27/1218 , H01L27/1262
Abstract: Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable insulator on the mold substrate, forming a flat substrate on the stretchable insulator, removing the mold substrate, forming discontinuous and corrugated wires on the stretchable insulator, forming a thin film transistor connected between the wires, and removing the flat substrate.
Abstract translation: 提供一种制造可拉伸薄膜晶体管的方法。 制造可伸缩薄膜晶体管的方法包括：在模具基板上形成模具基板，形成可拉伸绝缘体，在可伸缩绝缘体上形成平坦的基板，去除模具基板，在可拉伸的绝缘体上形成不连续的和波纹的导线， 连接在电线之间的薄膜晶体管，以及去除平坦的基板。
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公开(公告)号：US08653631B2
公开(公告)日：2014-02-18
申请号：US13775280
申请日：2013-02-25
Inventor： Jae Bon Koo , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
IPC: H01L29/06
CPC classification number: H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/78603
Abstract: Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.
Abstract translation: 提供了一种转移的薄膜晶体管及其制造方法。 该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。
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