公开(公告)号：US20120171798A1

公开(公告)日：2012-07-05

申请号：US11737545

申请日：2007-04-19

Applicant: Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

Inventor： Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

IPC: H01L21/02

CPC classification number: B81C1/00142 ,  B81B2201/0271 ,  B81C2201/0109 ,  Y10S438/933

Abstract: In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.

Abstract translation: 在制造微机电结构（MEMS）中，在MEMS中形成窄间隙的方法包括：a）在支撑衬底的表面上沉积牺牲材料层，b）光致抗蚀剂掩模并且至少部分蚀刻牺牲材料以形成 至少一个牺牲材料刀片，c）在所述牺牲层上沉积结构层，以及d）去除包括所述牺牲材料刀片的所述牺牲层，其中所述牺牲材料刀片被去除的所述结构层中残留有窄间隙 。

公开(公告)号：US08058940B1

公开(公告)日：2011-11-15

申请号：US12603355

申请日：2009-10-21

Applicant: Emmanuel P. Quevy

Inventor： Emmanuel P. Quevy

IPC: H03B5/30 ,  H03H9/46 ,  H04B1/26

CPC classification number: H03H9/2426 ,  H03B21/01 ,  H03H9/02377 ,  H03H9/2436 ,  H03H2009/2442

Abstract: A dual in-situ mixing approach for extended tuning range of resonators. In one embodiment, a dual in-situ mixing device tunes an input radio-frequency (RF) signal using a first mixer, a resonator body, and a second mixer. In one embodiment, the first mixer is coupled to receive the input RF signal and a local oscillator signal. The resonator body receives the output of the first mixer, and the second mixer is coupled to receive the output of the resonator body and the local oscillator signal to provide a tuned output RF signal as a function of the frequency of local oscillator signal.

Abstract translation: 用于扩展谐振器调谐范围的双位置混合方法。 在一个实施例中，双原位混合装置使用第一混频器，谐振器本体和第二混频器来调谐输入射频（RF）信号。 在一个实施例中，第一混频器被耦合以接收输入RF信号和本地振荡器信号。 谐振器主体接收第一混频器的输出，并且第二混频器被耦合以接收谐振器主体的输出和本地振荡器信号，以提供作为本地振荡器信号的频率的函数的调谐输出RF信号。

公开(公告)号：US20110121412A1

公开(公告)日：2011-05-26

申请号：US13017844

申请日：2011-01-31

Applicant: Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

Inventor： Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

IPC: H01L29/84 ,  H01L21/04

CPC classification number: B81C1/00293 ,  B81B7/02 ,  B81C1/00246 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0721 ,  B81C2203/0735 ,  B81C2203/0771

Abstract: Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.

公开(公告)号：US20110084781A1

公开(公告)日：2011-04-14

申请号：US12950519

申请日：2010-11-19

Applicant: Emmanuel P. Quevy ,  David H. Bernstein

Inventor： Emmanuel P. Quevy ,  David H. Bernstein

IPC: H03H9/24 ,  H01L21/30

CPC classification number: B81C1/0069 ,  B81C1/00349 ,  B81C1/00523 ,  G02B6/358 ,  H03H3/0076 ,  H03H9/2405 ,  H03H9/2457 ,  H03H2009/02496 ,  H03H2009/2442 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49165

Abstract: MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.

Abstract translation: 包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。 第一种材料具有与第二种材料不同的杨氏模量温度系数。 在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。 在一个这样的实施例中，第一材料是半导体，第二材料是电介质。 在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。 在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。 在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。

公开(公告)号：US07923790B1

公开(公告)日：2011-04-12

申请号：US11716070

申请日：2007-03-09

Applicant: Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

Inventor： Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

IPC: H01L29/84

CPC classification number: B81C1/00293 ,  B81B7/02 ,  B81C1/00246 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0721 ,  B81C2203/0735 ,  B81C2203/0771

Abstract: Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.

Abstract translation: 用于MEMS和微电子等器件封装的低温多层平面微型壳体。 微壳包括平面穿孔的预密封层，在其下面接近非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。 在一个实施例中，预密封层具有形成有镶嵌工艺的穿孔，以与微壳下方的腔室自对准。 密封层可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方具有密封层以密封穿孔。 在特定实施例中，密封层是金属，其电耦合到与微壳相邻的导电层，以电微接地微壳。

公开(公告)号：US07876167B1

公开(公告)日：2011-01-25

申请号：US12028503

申请日：2008-02-08

Applicant: Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

Inventor： Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

IPC: H03B5/32 ,  H03B5/40

CPC classification number: H03H9/1057 ,  H03H9/2426

Abstract: A hybrid system having a non-MEMS device and a MEMS device is described. The apparatus includes a non-MEMS device and an integrated circuit including a MEMS device, the integrated circuit formed on a substrate. The integrated circuit includes a control circuit for the non-MEMS device and a MEMS control circuit for the MEMS device.

Abstract translation: 描述了具有非MEMS器件和MEMS器件的混合系统。 该装置包括非MEMS器件和包括MEMS器件的集成电路，该集成电路形成在衬底上。 集成电路包括用于非MEMS器件的控制电路和用于MEMS器件的MEMS控制电路。

公开(公告)号：US07858422B1

公开(公告)日：2010-12-28

申请号：US11716227

申请日：2007-03-09

Applicant: Emmanuel P. Quevy ,  Roger T. Howe

Inventor： Emmanuel P. Quevy ,  Roger T. Howe

IPC: H01L21/00

CPC classification number: B81C1/00039 ,  B81B2201/0271

Abstract: A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.

Abstract translation: 描述了MEMS耦合器和形成具有这种耦合器的MEMS结构的方法。 在一个实施例中，MEMS结构包括构件和衬底。 耦合器延伸穿过构件的一部分并将构件与衬底连接。 该构件由第一材料构成，并且该耦合器由第二材料构成。 在一个实施例中，第一和第二材料基本相同。 在一个实施例中，第二材料是导电的并且不同于第一材料。 在另一个实施例中，一种用于制造MEMS结构的方法包括首先在衬底上形成构件。 然后形成由导电材料构成的耦合器，以将该构件与衬底连接。

公开(公告)号：US07591201B1

公开(公告)日：2009-09-22

申请号：US11716285

申请日：2007-03-09

Applicant: David H. Bernstein ,  Roger T. Howe ,  Emmanuel P. Quevy

Inventor： David H. Bernstein ,  Roger T. Howe ,  Emmanuel P. Quevy

IPC: F16H33/14

CPC classification number: H03H9/2457 ,  H03H3/0076 ,  H03H2009/02496 ,  Y10T74/11 ,  Y10T74/113

Abstract: A MEMS structure having a compensated resonating member is described. In an embodiment, a MEMS structure comprises a resonating member coupled to a substrate by an anchor. A dynamic mass-load is coupled with the resonating member. The dynamic mass-load is provided for compensating a change in frequency of the resonating member by altering the moment of inertia of the resonating member by way of a positional change relative to the anchor.

Abstract translation: 描述了具有补偿谐振元件的MEMS结构。 在一个实施例中，MEMS结构包括通过锚固件耦合到衬底的谐振构件。 动态质量负载与谐振构件耦合。 提供动态质量负载，用于通过相对于锚的位置变化改变谐振构件的惯性矩来补偿谐振构件的频率变化。

公开(公告)号：US07514853B1

公开(公告)日：2009-04-07

申请号：US11801774

申请日：2007-05-10

Applicant: Roger T. Howe ,  Emmanuel P. Quevy ,  David H. Bernstein

Inventor： Roger T. Howe ,  Emmanuel P. Quevy ,  David H. Bernstein

IPC: H01L23/34

CPC classification number: B81B3/0072 ,  B81B2201/0271 ,  H03H3/0076 ,  H03H9/02338 ,  H03H9/2431 ,  H03H9/2463 ,  H03H9/2473 ,  H03H2009/02354 ,  H03H2009/02496 ,  H03H2009/02503

Abstract: A MEMS structure having a temperature-compensated resonating member is described. The MEMS structure comprises a stress inverter member coupled with a substrate. A resonating member is housed in the stress inverter member and is suspended above the substrate. The MEMS stress inverter member is used to alter the thermal coefficient of frequency of the resonating member by inducing a stress on the resonating member in response to a change in temperature.

Abstract translation: 描述具有温度补偿谐振元件的MEMS结构。 MEMS结构包括与基板耦合的应力逆变器部件。 谐振构件容纳在应力反转构件中并悬浮在基板上。 MEMS应力逆变器部件用于通过响应于温度变化在谐振部件上引起应力来改变谐振部件的频率的热系数。

公开(公告)号：US08878528B2

公开(公告)日：2014-11-04

申请号：US13174417

申请日：2011-06-30

Applicant: Emmanuel P. Quevy

Inventor： Emmanuel P. Quevy

IPC: G01R33/02 ,  G01R33/028

CPC classification number: G01R33/0286

Abstract: A magnetic sensor utilizes a MEMS device that has at least one vibrating member and at least one conductive path integral with the vibrating member so that a current flows along the vibrating member and in the presence of a magnetic field interaction of the magnetic field and the point charges in the current on the conductive path due to the Lorentz force causes a change in vibration of the vibrating member. That change can be used to provide a measure of the magnetic field.

Abstract translation: 磁传感器利用具有至少一个振动构件和至少一个与振动构件成一体的导电路径的MEMS装置，使得电流沿着振动构件流动，并且在存在磁场和点的磁场相互作用的情况下 由于洛伦兹力导致的导电路径上的电流的电荷导致振动部件的振动的变化。 该变化可用于提供磁场的测量。