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    Hybrid read scheme for spin torque MRAM
    22.
    发明授权
    Hybrid read scheme for spin torque MRAM 有权
    用于自旋扭矩MRAM的混合读取方案

    公开(公告)号：US09183911B2

    公开(公告)日：2015-11-10

    申请号：US13633479

    申请日：2012-10-02

    Applicant: Everspin Technologies, Inc.

    Inventor： Syed M. Alam ,  Thomas Andre ,  Chitra Subramanian

    IPC: G11C11/00 ,  G11C11/16 ,  G11C13/00

    CPC classification number: G11C11/1673 ,  G11C11/1675 ,  G11C13/004 ,  G11C2013/0057

    Abstract: A method of reading data from a plurality of bits in a spin-torque magnetoresistive memory array includes performing one or more referenced read operations of the bits, and performing a self-referenced read operation, for example, a destructive self-referenced read operation, of any of the bits not successfully read by the referenced read operation. The referenced read operations can be initiated at the same time or prior to that of the destructive self-referenced read operation.

    Abstract translation: 一种从自旋转矩磁阻存储器阵列中的多个位读取数据的方法包括执行一个或多个参考的比特的读取操作，以及执行自参考的读取操作，例如破坏性的自参考读取操作， 通过引用的读取操作未成功读取的任何位。 引用的读取操作可以在破坏性自引用读取操作的同一时间或之前启动。

    HYBRID READ SCHEME FOR SPIN TORQUE MRAM
    23.
    发明申请
    HYBRID READ SCHEME FOR SPIN TORQUE MRAM 有权
    用于旋转扭矩MRAM的混合读取方案

    公开(公告)号：US20130128657A1

    公开(公告)日：2013-05-23

    申请号：US13633479

    申请日：2012-10-02

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： Syed M. Alam ,  Thomas Andre ,  Chitra Subramanian

    IPC: G11C11/16

    CPC classification number: G11C11/1673 ,  G11C11/1675 ,  G11C13/004 ,  G11C2013/0057

    Abstract: A method of reading data from a plurality of bits in a spin-torque magnetoresistive memory array includes performing one or more referenced read operations of the bits, and performing a self-referenced read operation, for example, a destructive self-referenced read operation, of any of the bits not successfully read by the referenced read operation. The referenced read operations can be initiated at the same time or prior to that of the destructive self-referenced read operation.

    Abstract translation: 一种从自旋转矩磁阻存储器阵列中的多个位读取数据的方法包括执行一个或多个参考的比特的读取操作，以及执行自参考的读取操作，例如破坏性的自参考读取操作， 通过引用的读取操作未成功读取的任何位。 引用的读取操作可以在破坏性自引用读取操作的同一时间或之前启动。

    SELF-REFERENCED SENSE AMPLIFIER WITH PRECHARGE
    24.
    发明申请
    SELF-REFERENCED SENSE AMPLIFIER WITH PRECHARGE 审中-公开

    公开(公告)号：US20180342276A1

    公开(公告)日：2018-11-29

    申请号：US16000071

    申请日：2018-06-05

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： Syed M. Alam ,  Chitra Subramanian

    IPC: G11C11/16

    CPC classification number: G11C11/1673 ,  G11C11/1675 ,  G11C27/024

    Abstract: Precharging circuits and techniques are presented for use with magnetic memory devices in order to speed up access to the memory cells for reading and writing. Including precharging in the sense amplifiers used to access the memory cells enables self-referenced read operations to be completed more quickly than is possible without precharging. Similarly, precharging can also be used in conjunction with write-back operations in order to allow the data state stored by magnetic tunnel junctions included in the memory cells to be changed more rapidly.

    METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY
    25.
    发明申请
    METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY 审中-公开
    写入旋转磁力随机存取存储器的方法

    公开(公告)号：US20160276012A1

    公开(公告)日：2016-09-22

    申请号：US15167758

    申请日：2016-05-27

    Applicant: Everspin Technologies, Inc.

    Inventor： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft ,  Chitra Subramanian ,  Halbert Lin

    IPC: G11C11/16

    CPC classification number: G11C11/1675 ,  G06F11/1048 ,  G06F11/1076 ,  G11C11/00 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1693 ,  G11C2013/0076 ,  G11C2029/0411

    Abstract: A spin-torque magnetoresistive memory includes array read circuits and array write circuits coupled to an array of magnetic bits. The array read circuits sample magnetic bits in the array, apply a write current pulse to the magnetic bits to set them to a first logic state, resample the magnetic bits using an additional offset current, and compare the results of sampling and resampling to determine the bit state for each magnetic bit. For each of the magnetic bits in the page having the second logic state, the array write circuits initiate a write-back, wherein the write-back includes applying a second write current pulse having opposite polarity in comparison with the first write current pulse to set the magnetic bit to the second state. A read or write operation may be received after initiation of the write-back where the write-back can be aborted for a portion of the bits in the case of a write operation. The write-back may be performed such that different portions of the magnetic bits are written back at different times, thereby staggering the write-back current pulses in time.

    Abstract translation: 自旋转矩磁阻存储器包括耦合到磁头阵列的阵列读取电路和阵列写入电路。 阵列读取电路对阵列中的磁头进行采样，向磁头施加写入电流脉冲以将其设置为第一逻辑状态，使用附加的偏移电流对磁性位进行重新采样，并比较采样和重采样的结果，以确定 每个磁头的位状态。 对于具有第二逻辑状态的页面中的每个磁性位，阵列写入电路启动回写，其中写回包括施加与第一写入电流脉冲相比具有相反极性的第二写入电流脉冲以设置 磁头到第二个状态。 在写回开始之后可以接收读取或写入操作，其中在写入操作的情况下可以中止一部分位的写回。 可以执行回写，使得磁头的不同部分在不同的时间被写回，从而及时地交错回写电流脉冲。

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