公开(公告)号：US20190280198A1

公开(公告)日：2019-09-12

申请号：US16419165

申请日：2019-05-22

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： Renu WHIG ,  Jijun SUN ,  Nicholas RIZZO ,  Jon SLAUGHTER ,  Dimitri HOUSSAMEDDINE ,  Frederick MANCOFF

IPC: H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

公开(公告)号：US20190189176A1

公开(公告)日：2019-06-20

申请号：US16286793

申请日：2019-02-27

Applicant: Everspin Technologies, Inc.

Inventor： Han-Jong CHIA ,  Sumio IKEGAWA ,  Michael TRAN ,  Jon SLAUGHTER

IPC: G11C11/16 ,  H01F10/32 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10 ,  G11C11/56 ,  H01L43/08

Abstract: A magnetoresistive memory device that stores data in the synthetic antiferromagnet (SAF) included in each spin-torque memory cell provides for more robust data storage. In normal operation, the memory cells use the free portion of the memory cell for data storage. Techniques for storing data in the reference portions of memory cells are presented, where an unbalanced SAF that includes ferromagnetic layers having different magnetic moments is used to lower the switching barrier for the SAF and allow for writing data values to the SAF using lower currents and magnetic fields than would be required for a balanced SAF.

公开(公告)号：US20190156878A1

公开(公告)日：2019-05-23

申请号：US16217185

申请日：2018-12-12

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： Thomas ANDRE ,  Dimitri HOUSSAMEDDINE ,  Syed M. ALAM ,  Jon SLAUGHTER ,  Chitra SUBRAMANIAN

IPC: G11C11/16

Abstract: A memory device is configured to identify a set of bit cells to be changed from a first state to a second state. In some examples, the memory device may apply a first voltage to the set of bit cells to change a least a first portion of the set of bit cells to the second state. In some cases, the memory device may also identify a second portion of the bit cells that remained in the first state following the application of the first voltage. In these cases, the memory device may apply a second voltage having a greater magnitude, duration, or both to the second portion of the set of bit cells in order to set the second portion of bit cells to the second state.

公开(公告)号：US20160260895A1

公开(公告)日：2016-09-08

申请号：US15145515

申请日：2016-05-03

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： Renu WHIG ,  Phillip MATHER ,  Kenneth SMITH ,  Sanjeev AGGARWAL ,  Jon SLAUGHTER ,  Nicholas RIZZO

IPC: H01L43/12 ,  G01R33/09 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/12 ,  B82Y25/00 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

Abstract translation: 半导体工艺集成了三个桥接电路，每个电路包括在单个芯片上作为惠斯登电桥耦合的磁阻传感器，以在三个正交方向上感测磁场。 该过程包括形成磁阻传感器的各种沉积和蚀刻步骤以及在三个桥接电路中的一个上的多个通量引导器，用于将“Z”轴磁场传送到在XY平面中定向的传感器上。

公开(公告)号：US20160084920A1

公开(公告)日：2016-03-24

申请号：US14953572

申请日：2015-11-30

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： Lianjun LIU ,  Phillip MATHER ,  Jon SLAUGHTER

IPC: G01R33/00 ,  G01R33/09

CPC classification number: G01R33/0029 ,  G01R33/0041 ,  G01R33/04 ,  G01R33/098

Abstract: A magnitude and direction of at least one of a reset current and a second stabilization current (that produces a reset field and a second stabilization field, respectively) is determined that, when applied to an array of magnetic sense elements, minimizes the total required stabilization field and reset field during the operation of the magnetic sensor and the measurement of the external field. Therefore, the low field sensor operates optimally (with the highest sensitivity and the lowest power consumption) around the fixed external field operating point. The fixed external field is created by other components in the sensor device housing (such as speaker magnets) which have a high but static field with respect to the low (earth's) magnetic field that describes orientation information.