公开(公告)号：US20180101100A1

公开(公告)日：2018-04-12

申请号：US15838366

申请日：2017-12-12

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI ,  Toru TSUCHIHASHI ,  Wataru NIHASHI

IPC: G03F7/32 ,  G03F7/20 ,  G03F7/16 ,  G03F7/38 ,  G03F7/40

CPC classification number: G03F7/325 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/2037 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

Abstract: A treatment liquid for rinsing and patterning a resist film obtained from an actinic ray-sensitive composition includes an organic solvent in which a content of a compound containing a sulfur atom in the treatment liquid is 10 mmol/L or lower, and the organic solvent is a hydrocarbon solvent. A pattern forming method includes: forming a resist film using an actinic ray-sensitive or radiation-sensitive composition; exposing the resist film; and treating the exposed resist film with the treatment liquid.

公开(公告)号：US20160349619A1

公开(公告)日：2016-12-01

申请号：US15232872

申请日：2016-08-10

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI ,  Shinichi KANNA

IPC: G03F7/32 ,  G03F7/40 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F7/325 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40 ,  Y10T428/24802

Abstract: A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

公开(公告)号：US20160103395A1

公开(公告)日：2016-04-14

申请号：US14973097

申请日：2015-12-17

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI ,  Shinichi KANNA

IPC: G03F7/30

CPC classification number: G03F7/325 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40 ,  Y10T428/24802

Abstract: A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

公开(公告)号：US20150004533A1

公开(公告)日：2015-01-01

申请号：US14478135

申请日：2014-09-05

Applicant: FUJIFILM Corporation

Inventor： Shuji HIRANO ,  Hiroo TAKIZAWA ,  Hideaki TSUBAKI

IPC: G03F7/027 ,  G03F7/038 ,  G03F7/20

CPC classification number: G03F7/0397 ,  C07D235/12 ,  C07D235/16 ,  C07D235/22 ,  C07D235/26 ,  C07D235/28 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/09 ,  G03F7/11 ,  G03F7/2002 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/322 ,  G03F7/325

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition in the present invention contains a nitrogen-containing compound (N) which is represented by the following general formula (N1): wherein, in the general formula (N1), X represents a group including a hetero atom; L represents a single bond or an alkylene group; R2 represents a substituent, in the case where a plurality of R2's are present, they may be the same as or different from each other and a plurality of R2's may be bonded to each other to form a ring; R3 represents a hydrogen atom or a substituent; and n represents an integer of 0 to 4.

Abstract translation: 本发明的光化射线敏感性或辐射敏感性树脂组合物含有下述通式（N1）表示的含氮化合物（N）：其中，在通式（N1）中，X表示 包括杂原子; L表示单键或亚烷基; R2表示取代基，在存在多个R 2的情况下，它们可以相同或不同，并且多个R 2可以彼此键合形成环; R3表示氢原子或取代基; n表示0〜4的整数。

公开(公告)号：US20140212796A1

公开(公告)日：2014-07-31

申请号：US14227344

申请日：2014-03-27

Applicant: FUJIFILM CORPORATION

Inventor： Hiroo TAKIZAWA ,  Kaoru IWATO ,  Hideaki TSUBAKI

IPC: G03F7/038

CPC classification number: G03F7/0388 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/405

Abstract: There is provided a pattern forming method comprising (1) a step of forming a film by using an electron beam-sensitive or extreme ultraviolet-sensitive resin composition, (2) a step of exposing the film by using an electron beam or an extreme ultraviolet ray, and (3) a step of developing the exposed film by using an organic solvent-containing developer, wherein the electron beam-sensitive or extreme ultraviolet-sensitive resin composition contains (A) a resin containing (R) a repeating unit having a structural moiety capable of decomposing upon irradiation with an electron beam or an extreme ultraviolet ray to generate an acid, and (B) a solvent.

Abstract translation: 提供了一种图案形成方法，其包括（1）通过使用电子束敏感或极紫外线敏感性树脂组合物形成膜的步骤，（2）通过使用电子束或极紫外线曝光该膜的步骤 （3）通过使用含有机溶剂的显影剂显影曝光膜的步骤，其中电子束敏感性或极紫外线敏感性树脂组合物含有（A）含有（R）重复单元的树脂，其具有 能够在用电子束或极紫外线照射时分解以产生酸的结构部分，和（B）溶剂。

公开(公告)号：US20240353753A1

公开(公告)日：2024-10-24

申请号：US18621915

申请日：2024-03-29

Applicant: FUJIFILM Corporation

Inventor： Asahi TAKAKI ,  Hideaki TSUBAKI ,  Takamitsu TOMIGA

IPC: G03F7/004

CPC classification number: G03F7/0045

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition having a concentration of solid contents of 15% or more, the resin composition containing (A) a resin including a repeating unit (a1) having an acid-decomposable group and a repeating unit (a2) having an aromatic ring, (B) a resin including a repeating unit (b1) represented by a specified general formula (1), and (C) a compound that generates an acid upon irradiation with an actinic ray or a radiation. A content of a repeating unit having an acid-decomposable group and included in the resin (B) is 5 mol % or less relative to all repeating units in the resin (B), and the resin (B) has a dispersity of less than 3.0.

公开(公告)号：US20190018317A1

公开(公告)日：2019-01-17

申请号：US16132671

申请日：2018-09-17

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI ,  Wataru NIHASHI

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  G03F7/40

Abstract: An actinic ray-sensitive or radiation-sensitive composition, and an actinic ray-sensitive or radiation-sensitive composition obtained from a method for purifying an actinic ray-sensitive or radiation-sensitive composition and a method for producing an actinic ray-sensitive or radiation-sensitive composition contain a cation having a metal atom and a ligand, and have each of a content of sodium, a content of magnesium, and a content of iron of 50 ppm by mass or less with respect to the total solid content of the actinic ray-sensitive or radiation-sensitive composition. A pattern forming method includes the method for producing or purifying the actinic ray-sensitive or radiation-sensitive composition. A method for producing an electronic device includes the pattern forming method.

公开(公告)号：US20180364568A1

公开(公告)日：2018-12-20

申请号：US16108893

申请日：2018-08-22

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI ,  Wataru NIHASHI

IPC: G03F7/004 ,  G03F7/09 ,  G03F7/32

Abstract: An actinic ray-sensitive or radiation-sensitive composition contains a cation including a metal atom and a ligand, in which the number of particles in liquid having particle diameters of 0.15 μm or less included in 1 mL of the actinic ray-sensitive or radiation-sensitive composition is 10 or less.

公开(公告)号：US20180267404A1

公开(公告)日：2018-09-20

申请号：US15987433

申请日：2018-05-23

Applicant: FUJIFILM Corporation

Inventor： Akihiro KANEKO ,  Tomotaka TSUCHIMURA ,  Shuji HIRANO ,  Hideaki TSUBAKI ,  Wataru NIHASHI

IPC: G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  G03F7/40 ,  C08F212/14 ,  C08F220/16 ,  C08F220/28 ,  G03F7/039 ,  G03F7/004 ,  H01L21/027

CPC classification number: G03F7/038 ,  C08F12/22 ,  C08F12/24 ,  C08F212/14 ,  C08F212/145 ,  C08F212/32 ,  C08F220/16 ,  C08F220/28 ,  C08F2220/1841 ,  C08F2220/283 ,  C09D125/18 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274 ,  C08F226/12

Abstract: Provided are a pattern forming method for obtaining a pattern which is excellent in etching resistance and in which occurrence of pattern collapse can be suppressed, and a method for manufacturing an electronic device including the pattern forming method. The pattern forming method includes a step of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition that contains a resin A having a repeating unit represented by General Formula (I) and a repeating unit represented by General Formula (BII), a step of exposing the film, and a step of developing the exposed film using a developer containing an organic solvent, to form a pattern.

公开(公告)号：US20180186907A1

公开(公告)日：2018-07-05

申请号：US15849690

申请日：2017-12-21

Applicant: FUJIFILM Corporation

Inventor： Hideaki TSUBAKI ,  Toru TSUCHIHASHI ,  Wataru NIHASHI

IPC: C08F12/24 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

Abstract: Provided is a pattern forming method including the successive steps of: a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive composition; an exposure step of exposing the resist film; a step of developing the exposed resist film using a developer, and a step of rinsing the developed resist film using a rinsing liquid containing an organic solvent. The developer includes a ketone-based or ether-based solvent having a branched alkyl group. The organic solvent contained in the rinsing liquid includes an ether-based solvent having a branched alkyl group.