Magnetic field sensor and method for producing a magnetic field sensor
    21.
    发明授权
    Magnetic field sensor and method for producing a magnetic field sensor 有权
    磁场传感器及磁场传感器的制造方法

    公开(公告)号:US09030198B2

    公开(公告)日:2015-05-12

    申请号:US13321759

    申请日:2010-07-26

    IPC分类号: G01N27/72 G01R33/04 H01F27/28

    摘要: A magnetometer is described, having a substrate and a magnetic core, the substrate having an excitation coil for generating a magnetic flux in the magnetic core; and the excitation coil having a coil cross section, which is aligned generally perpendicular to a main plane of extension of the substrate. The magnetic core is situated outside the coil cross section.

    摘要翻译: 描述了具有基板和磁芯的磁力计,所述基板具有用于在磁芯中产生磁通的励磁线圈; 并且所述激励线圈具有线圈横截面,所述线圈横截面大致垂直于所述衬底的主平面延伸。 磁芯位于线圈横截面外。

    PARTICLE SENSOR
    22.
    发明申请
    PARTICLE SENSOR 有权
    颗粒传感器

    公开(公告)号:US20110107817A1

    公开(公告)日:2011-05-12

    申请号:US12941484

    申请日:2010-11-08

    IPC分类号: G01N25/18 G01R27/08

    摘要: A particle sensor including a diaphragm, a diaphragm heater, and at least two measuring electrodes situated on the diaphragm, for electrical conductivity measurement, the diaphragm having a thickness of less than or equal to 50 μm, in order to allow a calorimetric particle quantity determination.

    摘要翻译: 一种颗粒传感器,包括隔膜,隔膜加热器和位于隔膜上的至少两个测量电极,用于电导率测量,隔膜具有小于或等于50μm的厚度,以便允许量热粒子量确定 。

    Particle sensor
    23.
    发明授权
    Particle sensor 有权
    粒子传感器

    公开(公告)号:US08800350B2

    公开(公告)日:2014-08-12

    申请号:US12941484

    申请日:2010-11-08

    摘要: A particle sensor including a diaphragm, a diaphragm heater, and at least two measuring electrodes situated on the diaphragm, for electrical conductivity measurement, the diaphragm having a thickness of less than or equal to 50 μm, in order to allow a calorimetric particle quantity determination.

    摘要翻译: 一种颗粒传感器,包括隔膜,隔膜加热器和位于隔膜上的至少两个测量电极,用于电导率测量,隔膜具有小于或等于50μm的厚度,以便允许量热粒子量确定 。

    Microelectromechanical sensor for measuring a force, and corresponding method
    25.
    发明授权
    Microelectromechanical sensor for measuring a force, and corresponding method 有权
    用于测量力的微机电传感器及相应的方法

    公开(公告)号:US09021898B2

    公开(公告)日:2015-05-05

    申请号:US13882767

    申请日:2011-09-21

    申请人: Tino Fuchs

    发明人: Tino Fuchs

    摘要: A microelectromechanical sensor is configured to measure a force, a pressure, or the like. The sensor includes a substrate and a measuring element. The measuring element includes at least two electrically conductive regions, and at least one of the electrically conductive regions is at least partly connected to the substrate. The sensor also includes at least one changing region, and the changing region lies at least partly between the electrically conductive regions. The changing region is configured in a substantially electrically insulating manner in an unloaded state and in a substantially electrically conductive manner in a loaded state.

    摘要翻译: 微机电传感器被配置成测量力,压力等。 传感器包括基板和测量元件。 测量元件包括至少两个导电区域,并且至少一个导电区域至少部分地连接到基板。 传感器还包括至少一个变化区域,并且变化区域至少部分地位于导电区域之间。 改变区域在负载状态下以基本上电绝缘的方式配置,并且基本上是导电的。

    METHOD FOR STRUCTURING SILICON CARBIDE WITH THE AID OF FLUORINE-CONTAINING COMPOUNDS
    26.
    发明申请
    METHOD FOR STRUCTURING SILICON CARBIDE WITH THE AID OF FLUORINE-CONTAINING COMPOUNDS 审中-公开
    含有氟化合物的碳化硅结构的方法

    公开(公告)号:US20100086463A1

    公开(公告)日:2010-04-08

    申请号:US12560978

    申请日:2009-09-16

    IPC分类号: C01B31/36 B44C1/22

    摘要: A method for etching silicon carbide, a mask being produced on a silicon carbide layer, the unmasked areas of the silicon carbide layer being etched using a fluorine-containing compound, which is selected from the group including interhalogen compounds of fluorine and/or xenon difluoride. The use of chlorine trifluoride, chlorine pentafluoride, and/or xenon difluoride for structuring silicon carbide layers covered with masks containing silicon dioxide and/or silicon oxide carbide; a structured silicon carbide layer obtained by the method, and a microstructured electromechanical component or a microelectronic component including a structured silicon carbide layer obtained by the method.

    摘要翻译: 一种用于蚀刻碳化硅的方法,在碳化硅层上制造掩模,使用含氟化合物蚀刻碳化硅层的未掩蔽区域,所述氟化合物选自氟和/或氙二氟化物的卤间化合物 。 使用三氟化氯,五氟化氯和/或二氧化氙来构造用包含二氧化硅和/或氧化硅碳化物的掩模覆盖的碳化硅层; 通过该方法获得的结构化碳化硅层,以及包含通过该方法获得的结构化碳化硅层的微结构化机电部件或微电子部件。