公开(公告)号：US20230066963A1

公开(公告)日：2023-03-02

申请号：US17537564

申请日：2021-11-30

Applicant: GlobalFoundries U.S. Inc.

Inventor： Hong Yu ,  Judson R. Holt ,  Zhenyu Hu

IPC: H01L29/10 ,  H01L29/165 ,  H01L29/735 ,  H01L29/737 ,  H01L29/66

Abstract: In a disclosed semiconductor structure, a lateral bipolar junction transistor (BJT) has a base positioned laterally between a collector and an emitter. The base includes a semiconductor fin with a first portion that extends from a substrate through an isolation layer, a second portion on the first portion, and a third portion on the second portion. The collector and emitter are on the isolation layer and positioned laterally immediately adjacent to opposing sidewalls of the second portion of the semiconductor fin. In some embodiments, the BJT is a standard BJT where the semiconductor fin (i.e., the base), the collector, and the emitter are made of the same semiconductor material. In other embodiments, the BJT is a heterojunction bipolar transistor (HBT) where a section of the semiconductor fin (i.e., the base) is made of a different semiconductor material for improved performance. Also disclosed is a method of forming the structure.

公开(公告)号：US20230062013A1

公开(公告)日：2023-03-02

申请号：US17644939

申请日：2021-12-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Judson R. Holt ,  Hong Yu ,  Alexander M. Derrickson

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor on a semiconductor fin and methods to form the same. A bipolar transistor structure according to the disclosure may include a doped semiconductor layer coupled to a base contact. A first semiconductor fin on the doped semiconductor layer may have a first doping type. An emitter/collector (E/C) material may be on a sidewall of an upper portion of the first semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.

公开(公告)号：US20230061482A1

公开(公告)日：2023-03-02

申请号：US17455290

申请日：2021-11-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Hong Yu ,  Jagar Singh ,  Zhenyu Hu ,  John J. Pekarik

IPC: H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/735 ,  H01L29/737 ,  H01L29/66 ,  H01L29/40

Abstract: The disclosure provides a lateral bipolar transistor structure with a base layer over a semiconductor buffer, and related methods. A lateral bipolar transistor structure may include an emitter/collector (E/C) layer over an insulator. The E/C layer has a first doping type. A semiconductor buffer is adjacent the insulator. A base layer is on the semiconductor buffer and adjacent the E/C layer, the base layer including a lower surface below the E/C layer and an upper surface above the E/C layer. The base layer has a second doping type opposite the first doping type.

公开(公告)号：US11101364B2

公开(公告)日：2021-08-24

申请号：US16296769

申请日：2019-03-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： George R. Mulfinger ,  Hong Yu ,  Man Gu ,  Jianwei Peng ,  Michael Aquilino

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/311

Abstract: Structures for a field-effect transistor and methods of forming a field-effect transistor. A gate structure of the field-effect transistor is arranged over an active region comprised of a semiconductor material. A first sidewall spacer is arranged adjacent to the gate structure. A second sidewall spacer includes a section arranged between the first sidewall spacer and the active region. The first sidewall spacer is composed of a low-k dielectric material.

公开(公告)号：US11037937B2

公开(公告)日：2021-06-15

申请号：US16689330

申请日：2019-11-20

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Meixiong Zhao ,  Randy W. Mann ,  Sanjay Parihar ,  Anton Tokranov ,  Hong Yu ,  Hongliang Shen ,  Guoxiang Ning

IPC: H01L27/11 ,  H01L21/8238 ,  H01L21/8239

Abstract: Structures including static random access memory bit cells and methods of forming a structure including static random access memory bit cells. A first bit cell includes a first plurality of semiconductor fins, and a second bit cell includes a second plurality of semiconductor fins. A deep trench isolation region is laterally positioned between the first plurality of semiconductor fins of the first bit cell and the second plurality of semiconductor fins of the second bit cell.

公开(公告)号：US12176426B2

公开(公告)日：2024-12-24

申请号：US17657154

申请日：2022-03-30

Applicant: GlobalFoundries U.S. Inc.

Inventor： Hong Yu ,  Alexander M. Derrickson ,  Judson R. Holt

IPC: H01L29/73 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

Abstract: Embodiments of the disclosure provide a bipolar transistor structure including a semiconductor fin on a substrate. The semiconductor fin has a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction. A first emitter/collector (E/C) material is adjacent a first sidewall of the semiconductor fin along the width of the semiconductor fin. The first E/C material has a second doping type opposite the first doping type. A second E/C material is adjacent a second sidewall of the semiconductor fin along the width of the semiconductor fin. The second E/C material has the second doping type. A width of the first E/C material is different from a width of the second E/C material.

公开(公告)号：US20240297242A1

公开(公告)日：2024-09-05

申请号：US18660956

申请日：2024-05-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hong Yu ,  Judson R. Holt ,  Alexander Derrickson

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L29/735 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/165 ,  H01L29/6625

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base having at least one sidewall with a gradient concentration of semiconductor material; an emitter on a first side of the extrinsic base; and a collector on a second side of the extrinsic base.

公开(公告)号：US11810951B2

公开(公告)日：2023-11-07

申请号：US17552386

申请日：2021-12-16

Applicant: GlobalFoundries U.S. Inc.

Inventor： Jianwei Peng ,  Hong Yu ,  Viorel Ontalus

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/0847 ,  H01L29/0653 ,  H01L29/66568 ,  H01L29/7848 ,  H01L29/78618

Abstract: Disclosed are a semiconductor structure and method of forming the structure. The structure includes a field effect transistor (FET) with a channel region between source/drain regions that extend through a semiconductor layer and into an insulator layer, that include a first portion in the insulator layer, and a second portion on the first portion in the semiconductor layer and, optionally, extending above the semiconductor layer. The first portion is relatively wide, includes a shallow section below the second portion, and a deep section adjacent to the channel region and overlayed by the semiconductor layer. The uniquely shaped first portion boosts saturation current to be boosted to allow the height of the second portion to be reduced to minimize overlap capacitance. Optionally, each source/drain region includes multiple semiconductor materials including a stress-inducing semiconductor material grown laterally from the semiconductor layer to improve charge carrier mobility in the channel region.

公开(公告)号：US20230197783A1

公开(公告)日：2023-06-22

申请号：US17552386

申请日：2021-12-16

Applicant: GlobalFoundries U.S. Inc.

Inventor： Jianwei Peng ,  Hong Yu ,  Viorel Ontalus

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/0847 ,  H01L29/7848 ,  H01L29/66568 ,  H01L29/0653

Abstract: Disclosed are a semiconductor structure and method of forming the structure. The structure includes a field effect transistor (FET) with a channel region between source/drain regions that extend through a semiconductor layer and into an insulator layer, that include a first portion in the insulator layer, and a second portion on the first portion in the semiconductor layer and, optionally, extending above the semiconductor layer. The first portion is relatively wide, includes a shallow section below the second portion, and a deep section adjacent to the channel region and overlayed by the semiconductor layer. The uniquely shaped first portion boosts saturation current to be boosted to allow the height of the second portion to be reduced to minimize overlap capacitance. Optionally, each source/drain region includes multiple semiconductor materials including a stress-inducing semiconductor material grown laterally from the semiconductor layer to improve charge carrier mobility in the channel region.

公开(公告)号：US20230066437A1

公开(公告)日：2023-03-02

申请号：US17525634

申请日：2021-11-12

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hong Yu ,  Judson R. Holt ,  Alexander Derrickson

IPC: H01L29/735 ,  H01L29/66 ,  H01L29/08 ,  H01L29/165 ,  H01L29/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base having at least one sidewall with a gradient concentration of semiconductor material; an emitter on a first side of the extrinsic base; and a collector on a second side of the extrinsic base.